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1. 发明申请

US20120286236A1 SUPER LATTICE/QUANTUM WELL NANOWIRES 有权
标题翻译：超级尺寸/质量好的纳米尺寸
公开(公告)号：US20120286236A1
公开(公告)日：2012-11-15
申请号：US13555383
申请日：2012-07-23
申请人： Harold J. HOVEL , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. HOVEL , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L29/06 , B82Y99/00
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

2. 发明授权

US08878259B2 Super lattice/quantum well nanowires 有权
标题翻译：超晶格/量子阱纳米线
公开(公告)号：US08878259B2
公开(公告)日：2014-11-04
申请号：US13555383
申请日：2012-07-23
申请人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L29/94 , H01L29/76 , H01L31/119 , H01L31/113 , H01L31/062 , H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B33/10 , H01L21/306 , H01L29/06 , H01L29/12 , H01L31/0352 , H01L33/20
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

3. 发明授权

US08273591B2 Super lattice/quantum well nanowires 有权
标题翻译：超晶格/量子阱纳米线
公开(公告)号：US08273591B2
公开(公告)日：2012-09-25
申请号：US12054886
申请日：2008-03-25
申请人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

4. 发明申请

US20090242869A1 SUPER LATTICE/QUANTUM WELL NANOWIRES 有权
标题翻译：超级尺寸/质量好的纳米尺寸
公开(公告)号：US20090242869A1
公开(公告)日：2009-10-01
申请号：US12054886
申请日：2008-03-25
申请人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L31/00 , H01L21/20 , H01L29/06
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

5. 发明授权

US08962374B2 Integration of a titania layer in an anti-reflective coating 有权
公开(公告)号：US08962374B2
公开(公告)日：2015-02-24
申请号：US13534037
申请日：2012-06-27
申请人： Satyavolu S. Papa Rao , Kathryn C. Fisher , Harold J. Hovel , Qiang Huang , Susan Huang , Young-Hee Kim
发明人： Satyavolu S. Papa Rao , Kathryn C. Fisher , Harold J. Hovel , Qiang Huang , Susan Huang , Young-Hee Kim
IPC分类号： H01L21/00
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.

6. 发明申请

US20090071836A1 METHOD OF ELECTRODEPOSITING GERMANIUM COMPOUND MATERIALS ON A SUBSTRATE 有权
标题翻译：在基材上电沉积锗化合物的方法
公开(公告)号：US20090071836A1
公开(公告)日：2009-03-19
申请号：US11856335
申请日：2007-09-17
申请人： Qiang Huang , Andrew J. Kellock , Xiaoyan Shao , Venkatram Venkatasamy
发明人： Qiang Huang , Andrew J. Kellock , Xiaoyan Shao , Venkatram Venkatasamy
IPC分类号： C25D7/12 , C25D5/02
CPC分类号： C25D7/12 , C25D3/54 , C25D5/022 , C25D5/18 , C25D17/001 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1683
摘要： A method of electrodepositing germanium compound materials on an exposed region of a substrate structure, which includes forming a plating solution by dissolving at least one germanium salt and at least one salt containing an element other than germanium in water; obtaining a substrate with a clean surface; immersing the substrate in the solution; and electroplating germanium compound materials on the substrate by applying an electrical potential between the substrate and an anode in the plating solution, in which the substrate is included in a semiconductor or phase change device.
摘要翻译：一种将锗化合物材料电沉积在基材结构的暴露区域上的方法，其包括通过将至少一种锗盐和至少一种含锗以外的元素的盐溶解在水中形成电镀溶液; 获得具有干净表面的基材; 将基材浸入溶液中; 以及通过在所述基板和所述基板被包括在半导体或相变装置中的所述电镀液中的所述基板和阳极之间施加电位而在所述基板上电镀锗化合物材料。

7. 发明授权

US07918984B2 Method of electrodepositing germanium compound materials on a substrate 有权
标题翻译：在基材上电沉积锗化合物材料的方法
公开(公告)号：US07918984B2
公开(公告)日：2011-04-05
申请号：US11856335
申请日：2007-09-17
申请人： Qiang Huang , Andrew J. Kellock , Xiaoyan Shao , Venkatram Venkatasamy
发明人： Qiang Huang , Andrew J. Kellock , Xiaoyan Shao , Venkatram Venkatasamy
IPC分类号： C25D5/02
CPC分类号： C25D7/12 , C25D3/54 , C25D5/022 , C25D5/18 , C25D17/001 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1683
摘要： A method of electrodepositing germanium compound materials on an exposed region of a substrate structure, which includes forming a plating solution by dissolving at least one germanium salt and at least one salt containing an element other than germanium in water; obtaining a substrate with a clean surface; immersing the substrate in the solution; and electroplating germanium compound materials on the substrate by applying an electrical potential between the substrate and an anode in the plating solution, in which the substrate is included in a semiconductor or phase change device.
摘要翻译：一种将锗化合物材料电沉积在基材结构的暴露区域上的方法，其包括通过将至少一种锗盐和至少一种含锗以外的元素的盐溶解在水中形成电镀溶液; 获得具有干净表面的基材; 将基材浸入溶液中; 以及通过在所述基板和所述基板被包括在半导体或相变装置中的所述电镀液中的所述基板和阳极之间施加电位而在所述基板上电镀锗化合物材料。

8. 发明申请

US20090011577A1 METHOD OF MAKING PHASE CHANGE MATERIALS ELECTROCHEMICAL ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：制备相变材料的方法电化学原子层沉积
公开(公告)号：US20090011577A1
公开(公告)日：2009-01-08
申请号：US11774105
申请日：2007-07-06
申请人： Qiang Huang , Xiaoyan Shao , John L. Stickney , Venkatram Venkatasamy
发明人： Qiang Huang , Xiaoyan Shao , John L. Stickney , Venkatram Venkatasamy
IPC分类号： H01L21/20
CPC分类号： C25D3/54 , C25D5/10 , C25D5/18 , C25D7/12 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1608
摘要： A method of making phase change materials on a substrate by electrochemical atomic layer deposition, which includes sequentially electrodepositing at least one atomic layer of a first element of a first solution and at least one atomic layer of a second element of a second solution on a substrate; and repeating the sequential electrodepositing until at least one film of a phase change material is formed on the substrate.
摘要翻译：一种通过电化学原子层沉积在基底上制备相变材料的方法，其包括将至少一个原子层的第一溶液的第一元素和第二溶液的第二元素的至少一个原子层顺次电沉积在基底上 ; 并重复连续的电沉积，直到在基底上形成至少一相变材料膜。

9. 发明授权

US09423274B2 Sensor with magnetic blocks unevenly distributed in housing 有权
标题翻译：磁性块传感器不均匀分布在外壳中
公开(公告)号：US09423274B2
公开(公告)日：2016-08-23
申请号：US14417791
申请日：2013-06-05
申请人： CHENGDU KUANHE TECHNOLOGY CO., LTD. , Qiang Huang , Song Gao , Yanxiong Ouyang
发明人： Qiang Huang
IPC分类号： G01B7/30 , G01R33/07 , G01D5/14 , G01P3/487 , G01D5/249
CPC分类号： G01D5/145 , G01D5/2492 , G01P3/487
摘要： A sensor with magnetic blocks unevenly distributed in a housing includes, sequentially connected, a sensing element, a power assistance model processor (21), a digital-to-analog converter (27), and an operational amplifier (28). The sensing element includes permanent magnetic blocks (2) and a Hall element (3) arranged in a cavity fitted together by a rotating disk (1) and a fixing disk (40). Multiple permanent magnetic blocks (2) are fixedly arranged on the rotating disk (1) in a circular-annular distribution, and at most two of the permanent magnetic blocks (2) are different in intervals. On a certain side of the rotating disk (1), the magnetic polarities of adjacent permanent magnetic blocks (2) are opposite, namely, the magnetic polarities of all of the permanent magnetic blocks (2) on the certain side of the rotating disk (1) are distributed in a pattern of pole N, pole S, pole N.
摘要翻译：具有不均匀分布在壳体中的磁块的传感器包括依次连接有感测元件，功率辅助模型处理器（21），数模转换器（27）和运算放大器（28）。感测元件包括永久磁块（2）和布置在通过旋转盘（1）和固定盘（40）装配在一起的空腔中的霍尔元件（3）。多个永久磁块（2）以圆形环形分布固定地布置在旋转盘（1）上，并且至多两个永久磁块（2）的间隔不同。在旋转盘（1）的某一侧，相邻的永久磁块（2）的磁极性相反，即旋转盘的某一侧上所有永久磁块（2）的磁极性（ 1）以极N，极S，极N的图案分布。

10. 发明授权

US09401443B2 Electrodeposition methods of gallium and gallium alloy films and related photovoltaic structures 有权
标题翻译：镓和镓合金膜和相关光伏结构的电沉积方法
公开(公告)号：US09401443B2
公开(公告)日：2016-07-26
申请号：US13604054
申请日：2012-09-05
申请人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
发明人： Shafaat Ahmed , Hariklia Deligianni , Qiang Huang , Kathleen B. Reuter , Lubomyr T. Romankiw , Raman Vaidyanathan
IPC分类号： C25D3/38 , C25D3/54 , C25D3/56 , C25D3/58 , C25D7/12 , C25D5/10 , H01L31/032 , C25D5/56 , H01L21/02 , H01L31/0749 , H01L23/373
CPC分类号： H01L31/0322 , C25D3/38 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/56 , C25D7/126 , H01L21/02568 , H01L21/02628 , H01L23/3738 , H01L31/0749 , H01L2224/73253 , Y02E10/541
摘要： Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.
摘要翻译：用于制备p型半导体的光伏器件和方法通常包括通过使导电层与不含络合剂的镀浴接触将一层镓或镓合金电镀到导电层上，所述络合剂包括镓盐，甲磺酸或硫酸钠和包含至少一个氮原子和/或至少一个硫原子的有机添加剂和溶剂; 调节溶液的pH值小于2.6或大于12.6。光电器件包括选自砷，锑，铋及其混合物的p型半导体层中的杂质。可以通过以这种方式电镀镓或镓合金来形成用于形成CIS，CGS和CIGS p型半导体结构的各种光伏前体层。还公开了形成镓或镓合金的热界面的方法。

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