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    • 1. 发明授权
    • Memory diagnostics system and method with hardware-based read/write patterns
    • 内存诊断系统和基于硬件读/写模式的方法
    • US08607104B2
    • 2013-12-10
    • US12972977
    • 2010-12-20
    • Hanwoo ChoTahsin AskarPhilip E. MadridGuhan KrishnanBrian W. AmickShawn SearlesRyan J. Hensley
    • Hanwoo ChoTahsin AskarPhilip E. MadridGuhan KrishnanBrian W. AmickShawn SearlesRyan J. Hensley
    • G06F11/00
    • G11C29/1201G11C29/022
    • A memory loopback system and method including an address/command transmit source configured to transmit a command and associated address through an address/command path. A transmit data source is configured to transmit write data associated with the command through a write path. Test control logic is configured to generate gaps between successive commands. A loopback connection is configured to route the write data from the write path to a read path. A data comparator is configured to compare the data received via the read path to a receive data source and generate a data loopback status output. Pattern generation logic can be configured to generate a loopback strobe, the loopback strobe being coupled to the read path. The pattern generation logic may be configured to synthesize a read strobe based on the test control logic and to use the synthesized read strobe as the loopback strobe. The loopback connection may be configured to route the address/command data from the address/command path to an address/command comparator, the address/command comparator being configured to compare the address/command data to an address/command receive source and generate an address/command loopback status output.
    • 一种存储器环回系统和方法,包括地址/命令发送源,其被配置为通过地址/命令路径发送命令和相关联的地址。 发送数据源被配置为通过写入路径发送与该命令相关联的写入数据。 测试控制逻辑被配置为在连续命令之间产生间隙。 配置环回连接将写入数据从写入路径路由到读取路径。 数据比较器被配置为将经由读取路径接收的数据与接收数据源进行比较,并生成数据环回状态输出。 模式生成逻辑可被配置为生成环回选通,环回选通被耦合到读取路径。 图案生成逻辑可以被配置为基于测试控制逻辑来合成读选通脉冲,并且使用合成的读选通作为环回选通。 环回连接可以被配置为将地址/命令数据从地址/命令路径路由到地址/命令比较器,地址/命令比较器被配置为将地址/命令数据与地址/命令接收源进行比较,并生成 地址/命令环回状态输出。
    • 2. 发明申请
    • MEMORY DIAGNOSTICS SYSTEM AND METHOD WITH HARDWARE-BASED READ/WRITE PATTERNS
    • 存储器诊断系统和基于硬件的读/写模式的方法
    • US20120159271A1
    • 2012-06-21
    • US12972977
    • 2010-12-20
    • Hanwoo ChoTahsin AskarPhilip E. MadridGuhan KrishnanBrian W. AmickShawn SearlesRyan J. Hensley
    • Hanwoo ChoTahsin AskarPhilip E. MadridGuhan KrishnanBrian W. AmickShawn SearlesRyan J. Hensley
    • G06F11/263
    • G11C29/1201G11C29/022
    • A memory loopback system and method including an address/command transmit source configured to transmit a command and associated address through an address/command path. A transmit data source is configured to transmit write data associated with the command through a write path. Test control logic is configured to generate gaps between successive commands. A loopback connection is configured to route the write data from the write path to a read path. A data comparator is configured to compare the data received via the read path to a receive data source and generate a data loopback status output. Pattern generation logic can be configured to generate a loopback strobe, the loopback strobe being coupled to the read path. The pattern generation logic may be configured to synthesize a read strobe based on the test control logic and to use the synthesized read strobe as the loopback strobe. The loopback connection may be configured to route the address/command data from the address/command path to an address/command comparator, the address/command comparator being configured to compare the address/command data to an address/command receive source and generate an address/command loopback status output.
    • 一种存储器环回系统和方法,包括地址/命令发送源,其被配置为通过地址/命令路径发送命令和相关联的地址。 发送数据源被配置为通过写入路径发送与该命令相关联的写入数据。 测试控制逻辑被配置为在连续命令之间产生间隙。 配置环回连接将写入数据从写入路径路由到读取路径。 数据比较器被配置为将经由读取路径接收的数据与接收数据源进行比较,并生成数据环回状态输出。 模式生成逻辑可被配置为生成环回选通,环回选通被耦合到读取路径。 图案生成逻辑可以被配置为基于测试控制逻辑来合成读选通脉冲,并且使用合成的读选通作为环回选通。 环回连接可以被配置为将地址/命令数据从地址/命令路径路由到地址/命令比较器,地址/命令比较器被配置为将地址/命令数据与地址/命令接收源进行比较,并生成 地址/命令环回状态输出。
    • 3. 发明申请
    • OPTIMAL SOLUTION TO CONTROL DATA CHANNELS
    • 控制数据通道的最佳解决方案
    • US20090055572A1
    • 2009-02-26
    • US11843434
    • 2007-08-22
    • Tahsin AskarPhilip E. Madrid
    • Tahsin AskarPhilip E. Madrid
    • G06F12/00
    • G06F13/1684
    • A DRAM controller may comprise two sub-controllers, each capable of handling a respective N-bit interface (e.g. 64-bit interface). Each sub-controller may also be configurable to be (2*N)-bit (e.g. 128-bit) capable with respect to control logic, for controlling a logical 128-bit data path. In ganged mode, each sub-controller may logically operate as if it were handling data in 128-bit chunks, (i.e. handling the entire 128-bit data path), while actual full bandwidth may be achieved by having one of the sub-controllers operate on commands and a first N-bit portion of each (2*N)-bit chunk of data, and having the other sub-controller operate on a “copy” of the commands with a corresponding remaining N-bit portion of each (2*N)-bit chunk of data. Once the BIOS has configured and initialized the two DRAM controllers to operate in ganged mode, the BIOS and all software may no longer need to be aware that two memory controllers are used to access a single (2*N)-bit wide channel.
    • DRAM控制器可以包括两个子控制器,每个子控制器能够处理相应的N位接口(例如,64位接口)。 每个子控制器还可以被配置为相对于控制逻辑能够(2 * N)位(例如128位),用于控制逻辑128位数据路径。 在联动模式下,每个子控制器可以在逻辑上操作,就像处理128位块中的数据一样(即处理整个128位数据路径),而实际的全带宽可以通过使其中一个子控制器 对每个(2 * N)位数据块的命令和第一N位部分进行操作,并且使另一个子控制器对命令的“复制”与每个(2×N)位数据的相应的剩余N位部分进行操作 2 * N)位数据块。 一旦BIOS配置并初始化了两个DRAM控制器以联合模式运行,则BIOS和所有软件可能不再需要注意两个存储器控制器用于访问单个(2 * N)位宽通道。
    • 4. 发明申请
    • DETECTION OF SPECULATIVE PRECHARGE
    • 检测预测
    • US20090055570A1
    • 2009-02-26
    • US11843443
    • 2007-08-22
    • Philip E. MadridTahsin Askar
    • Philip E. MadridTahsin Askar
    • G06F12/00
    • G06F12/0215G06F13/161
    • A DRAM controller may be configured to re-order read/write requests to maximize the number of page hits and minimize the number of page conflicts and page misses. A three-level prediction algorithm may be performed to obtain auto-precharge prediction for each read/write request, without having to track every individual page. Instead, the DRAM controller may track the history of page activity for each bank of DRAM, and make a prediction to first order based history that is not bank based. The memory requests may be stored in a queue, a specified number at a time, and used to determine whether a page should be closed or left open following access to that page. If no future requests in the queue are to the given bank containing the page, recent bank history for that bank may be used to obtain a prediction whether the page should be closed or left open. If the page is not closed as a result of the determination and/or prediction, it may be left open and closed after it has remained idle a specified length of time following the last access to the page.
    • DRAM控制器可以被配置为重新排序读/写请求以最大化页面命中的数量并且最小化页面冲突和页错过的次数。 可以执行三电平预测算法以获得每个读/写请求的自动预充电预测,而不必跟踪每个单独的页面。 相反,DRAM控制器可以跟踪每个DRAM行的页面活动的历史,并且对基于非银行的基于第一阶的历史进行预测。 存储器请求可以一次存储在一个队列中,一个指定的数字,并且用于确定在访问该页面之后页面是应该被关闭还是保持打开。 如果队列中未来的请求不包含该页面的给定银行,则该银行的最近银行历史记录可用于获取该页面是否应该被关闭或保持打开的预测。 如果作为确定和/或预测的结果没有关闭页面,则可以在最后访问页面之后指定的时间长度保持空闲之后将其打开并关闭。
    • 5. 发明授权
    • Temperature throttling mechanism for DDR3 memory
    • DDR3内存的温度调节机制
    • US09122648B2
    • 2015-09-01
    • US11843428
    • 2007-08-22
    • Tahsin AskarPhilip E. Madrid
    • Tahsin AskarPhilip E. Madrid
    • G06F3/00G06F13/16
    • G06F13/161
    • A method for throttling a bus, e.g. a memory bus, may be used to compensate for potential inaccuracy of feedback information received for monitored characteristics, e.g. temperature, reported by sensors configured in monitored devices, e.g. memory devices, accessed through the bus. For example, in case of a memory bus, a memory controller may be configured to throttle the memory bus in a way that maximizes system performance while ensuring that the memory devices keep operating within their thermal limits. Readings obtained from the memory, or from close proximity to the memory, may indicate whether the temperature of the memory has crossed over one or more designated trip points, and one or more algorithms may be executed to perform throttling according to the readings and based on fixed and dynamic throttling modes. The memory controller may infer temperature changes taking place in the memory devices when successive readings are indicating that the temperature of the memory device has remained over a given trip point. Based on these inferences, the memory controller may then change the manner in which the bus is throttled.
    • 一种用于扼流总线的方法,例如 存储器总线可以用于补偿为监视特性而接收的反馈信息的潜在不准确性,例如, 温度由在被监控设备中配置的传感器报告。 存储设备,通过总线访问。 例如,在存储器总线的情况下,存储器控制器可以被配置为以使得系统性能最大化的方式来扼制存储器总线,同时确保存储器件在其热限制内保持工作。 从存储器或从靠近存储器获得的读取可以指示存储器的温度是否超过一个或多个指定的跳变点,并且可以执行一个或多个算法以根据读数执行调节,并且基于 固定和动态节流模式。 当连续读数指示存储器件的温度保持在给定跳变点以上时,存储器控制器可以推断在存储器件中发生的温度变化。 基于这些推论,存储器控制器然后可以改变总线被节流的方式。
    • 6. 发明授权
    • Optimal solution to control data channels
    • 控制数据通道的最佳解决方案
    • US08006032B2
    • 2011-08-23
    • US11843434
    • 2007-08-22
    • Tahsin AskarPhilip E. Madrid
    • Tahsin AskarPhilip E. Madrid
    • G06F12/00
    • G06F13/1684
    • A dynamic random access memory (DRAM) controller may comprise two sub-controllers, each capable of handling a respective N-bit interface (e.g. 64-bit interface). Each sub-controller may also be configurable to be (2*N)-bit (e.g. 128-bit) capable with respect to control logic, for controlling a logical 128-bit data path. In ganged mode, each sub-controller may logically operate as if it were handling data in 128-bit chunks, (i.e. handling the entire 128-bit data path), while actual full bandwidth may be achieved by having one of the sub-controllers operate on commands and a first N-bit portion of each (2*N)-bit chunk of data, and having the other sub-controller operate on a “copy” of the commands with a corresponding remaining N-bit portion of each (2*N)-bit chunk of data. Once the basic input/output system (BIOS) has configured and initialized the two DRAM controllers to operate in ganged mode, the BIOS and all software may no longer need to be aware that two memory controllers are used to access a single (2*N)-bit wide channel.
    • 动态随机存取存储器(DRAM)控制器可以包括两个子控制器,每个子控制器能够处理相应的N位接口(例如,64位接口)。 每个子控制器还可以被配置为相对于控制逻辑能够(2 * N)位(例如128位),用于控制逻辑128位数据路径。 在联动模式下,每个子控制器可以在逻辑上操作,就像处理128位块中的数据一样(即处理整个128位数据路径),而实际的全带宽可以通过使其中一个子控制器 对每个(2 * N)位数据块的命令和第一N位部分进行操作,并且使另一个子控制器对命令的“复制”与每个(2×N)位数据的相应的剩余N位部分进行操作 2 * N)位数据块。 一旦基本输入/输出系统(BIOS)配置并初始化了两个DRAM控制器以组合模式运行,BIOS和所有软件可能不再需要注意两个存储器控制器用于访问单个(2 * N )位宽通道。
    • 7. 发明授权
    • Detection of speculative precharge
    • 检测投机性预充电
    • US07761656B2
    • 2010-07-20
    • US11843443
    • 2007-08-22
    • Philip E. MadridTahsin Askar
    • Philip E. MadridTahsin Askar
    • G06F12/00
    • G06F12/0215G06F13/161
    • A DRAM controller may be configured to re-order read/write requests to maximize the number of page hits and minimize the number of page conflicts and page misses. A three-level prediction algorithm may be performed to obtain auto-precharge prediction for each read/write request, without having to track every individual page. Instead, the DRAM controller may track the history of page activity for each bank of DRAM, and make a prediction to first order based history that is not bank based. The memory requests may be stored in a queue, a specified number at a time, and used to determine whether a page should be closed or left open following access to that page. If no future requests in the queue are to the given bank containing the page, recent bank history for that bank may be used to obtain a prediction whether the page should be closed or left open. If the page is not closed as a result of the determination and/or prediction, it may be left open and closed after it has remained idle a specified length of time following the last access to the page.
    • DRAM控制器可以被配置为重新排序读/写请求以最大化页面命中的数量并且最小化页面冲突和页错过的次数。 可以执行三电平预测算法以获得每个读/写请求的自动预充电预测,而不必跟踪每个单独的页面。 相反,DRAM控制器可以跟踪每个DRAM行的页面活动的历史,并且对基于非银行的基于第一阶的历史进行预测。 存储器请求可以一次存储在一个队列中,一个指定的数字,并且用于确定在访问该页面之后页面是应该被关闭还是保持打开。 如果队列中未来的请求不包含该页面的给定银行,则可能会使用该银行的最近银行历史记录来获取该页面是关闭还是打开的预测。 如果作为确定和/或预测的结果没有关闭页面,则可以在最后访问页面之后指定的时间长度保持空闲之后将其打开并关闭。
    • 8. 发明申请
    • TEMPERATURE THROTTLING MECHANISM FOR DDR3 MEMORY
    • DDR3存储器的温度转折机制
    • US20090052266A1
    • 2009-02-26
    • US11843428
    • 2007-08-22
    • Tahsin AskarPhilip E. Madrid
    • Tahsin AskarPhilip E. Madrid
    • G11C7/04
    • G06F13/161
    • A method for throttling a bus, e.g. a memory bus, may be used to compensate for potential inaccuracy of feedback information received for monitored characteristics, e.g. temperature, reported by sensors configured in monitored devices, e.g. memory devices, accessed through the bus. For example, in case of a memory bus, a memory controller may be configured to throttle the memory bus in a way that maximizes system performance while ensuring that the memory devices keep operating within their thermal limits. Readings obtained from the memory, or from close proximity to the memory, may indicate whether the temperature of the memory has crossed over one or more designated trip points, and one or more algorithms may be executed to perform throttling according to the readings and based on fixed and dynamic throttling modes. The memory controller may infer temperature changes taking place in the memory devices when successive readings are indicating that the temperature of the memory device has remained over a given trip point. Based on these inferences, the memory controller may then change the manner in which the bus is throttled.
    • 一种用于扼流总线的方法,例如 存储器总线可以用于补偿为监视特性而接收的反馈信息的潜在不准确性,例如, 温度由在被监控设备中配置的传感器报告。 存储设备,通过总线访问。 例如,在存储器总线的情况下,存储器控制器可以被配置为以使得系统性能最大化的方式来扼制存储器总线,同时确保存储器件在其热限制内保持工作。 从存储器或从靠近存储器获得的读取可以指示存储器的温度是否超过一个或多个指定的跳变点,并且可以执行一个或多个算法以根据读数执行调节,并且基于 固定和动态节流模式。 当连续读数指示存储器件的温度保持在给定跳变点以上时,存储器控制器可以推断在存储器件中发生的温度变化。 基于这些推论,存储器控制器然后可以改变总线被节流的方式。