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1. 发明申请

US20090206737A1 Organic electroluminescent device and fabrication method thereof 有权
标题翻译：有机电致发光器件及其制造方法
公开(公告)号：US20090206737A1
公开(公告)日：2009-08-20
申请号：US12322039
申请日：2009-01-27
申请人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
发明人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
IPC分类号： H01J1/62 , H01L33/00
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , H01L27/3265 , H01L27/3269 , H01L29/04
摘要： The invention discloses an organic electroluminescent device includes a substrate. The substrate includes a first control area and a second control area, a polysilicon active layer disposed on the first control area, and a first conductivity type source/drain area disposed in the polysilicon active layer. A first dielectric layer is disposed on the polysilicon active layer serving as a first gate dielectric layer, a first gate and a second gate is disposed on the polysilicon active layer and the second control area, respectively, wherein the first gate and the first conductivity type source/drain area constitute a first conductivity type thin film transistor serving as a switch element. A second dielectric layer disposed on the first gate and the second gate serves as a second gate dielectric layer, a micro-crystal silicon active layer disposed over the second gate.
摘要翻译：本发明公开了一种包括基板的有机电致发光器件。衬底包括第一控制区域和第二控制区域，设置在第一控制区域上的多晶硅有源层以及设置在多晶硅有源层中的第一导电类型源极/漏极区域。第一电介质层设置在用作第一栅介质层的多晶硅有源层上，第一栅极和第二栅极分别设置在多晶硅有源层和第二控制区上，其中第一栅极和第一导电类型源极/漏极区域构成用作开关元件的第一导电型薄膜晶体管。设置在第一栅极和第二栅极上的第二电介质层用作第二栅极电介质层，设置在第二栅极上的微晶硅有源层。

2. 发明授权

US08299471B2 Organic electroluminescent device and fabrication method thereof 有权
标题翻译：有机电致发光器件及其制造方法
公开(公告)号：US08299471B2
公开(公告)日：2012-10-30
申请号：US12322039
申请日：2009-01-27
申请人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
发明人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
IPC分类号： H01L27/14 , H01L21/00 , H01L21/84
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , H01L27/3265 , H01L27/3269 , H01L29/04
摘要： The invention discloses an organic electroluminescent device includes a substrate. The substrate includes a first control area and a second control area, a polysilicon active layer disposed on the first control area, and a first conductivity type source/drain area disposed in the polysilicon active layer. A first dielectric layer is disposed on the polysilicon active layer serving as a first gate dielectric layer, a first gate and a second gate is disposed on the polysilicon active layer and the second control area, respectively, wherein the first gate and the first conductivity type source/drain area constitute a first conductivity type thin film transistor serving as a switch element. A second dielectric layer disposed on the first gate and the second gate serves as a second gate dielectric layer, a micro-crystal silicon active layer disposed over the second gate.
摘要翻译：本发明公开了一种包括基板的有机电致发光器件。衬底包括第一控制区域和第二控制区域，设置在第一控制区域上的多晶硅有源层以及设置在多晶硅有源层中的第一导电类型源极/漏极区域。第一电介质层设置在用作第一栅介质层的多晶硅有源层上，第一栅极和第二栅极分别设置在多晶硅有源层和第二控制区上，其中第一栅极和第一导电类型源极/漏极区域构成用作开关元件的第一导电型薄膜晶体管。设置在第一栅极和第二栅极上的第二电介质层用作第二栅极电介质层，设置在第二栅极上的微晶硅有源层。

3. 发明授权

US07786480B2 System for displaying images including thin film transistor device and method for fabricating the same 有权
标题翻译：用于显示图像的系统，包括薄膜晶体管器件及其制造方法
公开(公告)号：US07786480B2
公开(公告)日：2010-08-31
申请号：US11502842
申请日：2006-08-11
申请人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Feng-Yi Chen
发明人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Feng-Yi Chen
IPC分类号： H01L31/00
CPC分类号： H01L27/12 , H01L21/84
摘要： A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate having a pixel region. An active layer is disposed on the substrate of the pixel region, comprising a channel region, a pair of source/drain regions separated by the channel region. The channel region comprises dopants with a first conductivity type and a second conductivity type opposite to the first conductivity type. A gate structure is disposed on the active layer, comprising a stack of a gate dielectric layer and a gate layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.
摘要翻译：用于显示图像的系统。该系统包括薄膜晶体管（TFT）器件，其包括具有像素区域的衬底。有源层设置在像素区域的衬底上，包括沟道区，由沟道区隔开的一对源极/漏极区。沟道区域包括具有与第一导电类型相反的第一导电类型和第二导电类型的掺杂剂。栅极结构设置在有源层上，包括栅极介电层和栅极层的堆叠。还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

4. 发明申请

US20080035995A1 System for displaying images including thin film transistor device and method for fabricating the same 有权
标题翻译：用于显示图像的系统，包括薄膜晶体管器件及其制造方法
公开(公告)号：US20080035995A1
公开(公告)日：2008-02-14
申请号：US11502842
申请日：2006-08-11
申请人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Feng-Yi Chen
发明人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Feng-Yi Chen
IPC分类号： H01L27/01
CPC分类号： H01L27/12 , H01L21/84
摘要： A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate having a pixel region. An active layer is disposed on the substrate of the pixel region, comprising a channel region, a pair of source/drain regions separated by the channel region. The channel region comprises dopants with a first conductivity type and a second conductivity type opposite to the first conductivity type. A gate structure is disposed on the active layer, comprising a stack of a gate dielectric layer and a gate layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.
摘要翻译：用于显示图像的系统。该系统包括薄膜晶体管（TFT）器件，其包括具有像素区域的衬底。有源层设置在像素区域的衬底上，包括沟道区，由沟道区隔开的一对源极/漏极区。沟道区域包括具有与第一导电类型相反的第一导电类型和第二导电类型的掺杂剂。栅极结构设置在有源层上，包括栅极介电层和栅极层的堆叠。还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

5. 发明授权

US07612379B2 Multi-gate thin film transistor having recrystallized channel regions with different grain sizes 有权
标题翻译：具有不同晶粒尺寸的再结晶沟道区的多栅极薄膜晶体管
公开(公告)号：US07612379B2
公开(公告)日：2009-11-03
申请号：US11938117
申请日：2007-11-09
申请人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Fengyi Chen
发明人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Fengyi Chen
IPC分类号： H01L29/786
CPC分类号： H01L29/78675 , H01L27/1229 , H01L29/78612 , H01L29/78645
摘要： An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer. The silicon film layer is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone, which are not adjacent to each other. A grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone. The first electrode corresponding to the first crystallization zone is disposed on the silicon film layer. The reflecting layer corresponding to the second crystallization zone is disposed on the transparent substrate. The silicon film layer is disposed on the transparent substrate and the reflecting layer.
摘要翻译：图像显示系统具有设置在透明基板上的多栅极薄膜晶体管（TFT）。多栅极TFT包括硅膜层，第一电极和反射层。硅膜层形成在透明基板上，具有彼此不相邻的第一结晶区和第二结晶区。第一结晶区的晶粒尺寸小于第二结晶区的晶粒尺寸。对应于第一结晶区的第一电极设置在硅膜层上。对应于第二结晶区的反射层设置在透明基板上。硅膜层设置在透明基板和反射层上。

6. 发明申请

US20090206344A1 System for displaying images 有权
标题翻译：用于显示图像的系统
公开(公告)号：US20090206344A1
公开(公告)日：2009-08-20
申请号：US12378860
申请日：2009-02-19
申请人： Hanson Liu , Ryan Lee
发明人： Hanson Liu , Ryan Lee
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L29/78648 , H01L27/1255
摘要： A system for displaying images is disclosed. The system includes a self-emitting display device including an array substrate having a pixel region. A light-emitting diode is disposed on the array substrate of the pixel region. First and second driving thin film transistors are electrically connected to a light-emitting diode. The first driving thin film transistor includes a first gate and an active layer stacked on the array substrate of the pixel region and the second driving thin film transistor includes the active layer and a second gate thereon. The first gate is coupled to a first voltage and the second gate is coupled to a second voltage different from the first voltage during the same frame.
摘要翻译：公开了一种用于显示图像的系统。该系统包括具有像素区域的阵列基板的自发光显示装置。在像素区域的阵列基板上设置有发光二极管。第一和第二驱动薄膜晶体管电连接到发光二极管。第一驱动薄膜晶体管包括堆叠在像素区域的阵列基板上的第一栅极和有源层，第二驱动薄膜晶体管包括有源层和第二栅极。第一栅极耦合到第一电压，并且在同一帧期间第二栅极耦合到不同于第一电压的第二电压。

7. 发明申请

US20070285592A1 System for displaying image and laser annealing method for ltps 审中-公开
标题翻译：用于显示图像的系统和用于ltps的激光退火方法
公开(公告)号：US20070285592A1
公开(公告)日：2007-12-13
申请号：US11785206
申请日：2007-04-16
申请人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu
发明人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu
IPC分类号： G02F1/136 , H01L21/288
CPC分类号： H01L21/02422 , G02F1/1368 , G02F2202/104 , H01L21/02491 , H01L21/02532 , H01L21/02675 , H01L27/1285 , H01L29/66765 , H01L29/78678
摘要： A method for fabricating a system for displaying images is provided, wherein the system comprises a low temperature polysilicon thin film transistor (LTPS-TFT) substrate. The method comprises providing a substrate comprising a first metal layer and a silicon film layer. The silicon film layer is illuminated t by a laser light having a wavelength larger than 400 nm. The silicon film layer is heated to crystallize by absorbing a part of the laser light, and is heated to re-crystallize by absorbing another part of the laser light, which passes through the silicon film layer and is reflected from the first metal layer to the silicon film layer.
摘要翻译：提供一种用于制造用于显示图像的系统的方法，其中该系统包括低温多晶硅薄膜晶体管（LTPS-TFT）基板。该方法包括提供包括第一金属层和硅膜层的衬底。通过波长大于400nm的激光照射硅膜层。通过吸收一部分激光将硅膜层加热结晶，并通过吸收通过硅膜层并从第一金属层反射的另一部分激光而被加热再结晶硅膜层。

8. 发明授权

US08120037B2 System for displaying images 有权
标题翻译：用于显示图像的系统
公开(公告)号：US08120037B2
公开(公告)日：2012-02-21
申请号：US12378860
申请日：2009-02-19
申请人： Hanson Liu , Ryan Lee
发明人： Hanson Liu , Ryan Lee
IPC分类号： H01L27/14
CPC分类号： H01L29/78648 , H01L27/1255
摘要： A system for displaying images is disclosed. The system includes a self-emitting display device including an array substrate having a pixel region. A light-emitting diode is disposed on the array substrate of the pixel region. First and second driving thin film transistors are electrically connected to a light-emitting diode. The first driving thin film transistor includes a first gate and an active layer stacked on the array substrate of the pixel region and the second driving thin film transistor includes the active layer and a second gate thereon. The first gate is coupled to a first voltage and the second gate is coupled to a second voltage different from the first voltage during the same frame.
摘要翻译：公开了一种用于显示图像的系统。该系统包括具有像素区域的阵列基板的自发光显示装置。在像素区域的阵列基板上设置有发光二极管。第一和第二驱动薄膜晶体管电连接到发光二极管。第一驱动薄膜晶体管包括堆叠在像素区域的阵列基板上的第一栅极和有源层，第二驱动薄膜晶体管包括有源层和第二栅极。第一栅极耦合到第一电压，并且在同一帧期间第二栅极耦合到不同于第一电压的第二电压。

9. 发明申请

US20090203160A1 SYSTEM FOR DISPLAYING IMAGES INCLUDING THIN FILM TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：用于显示包括薄膜晶体管器件的图像的系统及其制造方法
公开(公告)号：US20090203160A1
公开(公告)日：2009-08-13
申请号：US12427626
申请日：2009-04-21
申请人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Feng-Yi Chen
发明人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Feng-Yi Chen
IPC分类号： H01L21/02 , H01L21/336
CPC分类号： H01L29/78648 , H01L27/12 , H01L27/1281
摘要： A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate comprising a driving circuit region and a pixel region. First and second active layers are disposed on the substrate in the driving circuit region and in the pixel region, respectively. The first active layer has a grain size greater than that of the second active layer. Two gate structures are disposed on the first and second active layers, respectively, in which each gate structure comprises a stack of a gate dielectric layer and a gate layer. A reflector is disposed on the substrate under the first active layer and insulated from the first active layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.
摘要翻译：用于显示图像的系统。该系统包括薄膜晶体管（TFT）器件，其包括包括驱动电路区域和像素区域的衬底。第一和第二有源层分别设置在驱动电路区域和像素区域中的衬底上。第一有源层具有比第二有源层大的晶粒尺寸。两个栅极结构分别设置在第一和第二有源层上，其中每个栅极结构包括栅极介电层和栅极层的堆叠。反射器设置在第一有源层下的衬底上并与第一有源层绝缘。还公开了一种用于制造用于显示包括TFT器件的图像的系统的方法。

10. 发明申请

US20080128704A1 IMAGE DISPLAY SYSTEM AND MANUFACTURING METHOD OF MULTI-GATE THIN FILM TRANSISTOR 有权
标题翻译：多栅极薄膜晶体管的图像显示系统和制造方法
公开(公告)号：US20080128704A1
公开(公告)日：2008-06-05
申请号：US11938117
申请日：2007-11-09
申请人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Fengyi Chen
发明人： Yoshihiro Morimoto , Ryan Lee , Hanson Liu , Fengyi Chen
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L29/78675 , H01L27/1229 , H01L29/78612 , H01L29/78645
摘要： An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer. The silicon film layer is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone, which are not adjacent to each other. A grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone. The first electrode corresponding to the first crystallization zone is disposed on the silicon film layer. The reflecting layer corresponding to the second crystallization zone is disposed on the transparent substrate. The silicon film layer is disposed on the transparent substrate and the reflecting layer.
摘要翻译：图像显示系统具有设置在透明基板上的多栅极薄膜晶体管（TFT）。多栅极TFT包括硅膜层，第一电极和反射层。硅膜层形成在透明基板上，具有彼此不相邻的第一结晶区和第二结晶区。第一结晶区的晶粒尺寸小于第二结晶区的晶粒尺寸。对应于第一结晶区的第一电极设置在硅膜层上。对应于第二结晶区的反射层设置在透明基板上。硅膜层设置在透明基板和反射层上。

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