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1. 发明授权

US08831062B2 Semiconductor laser diodes 有权
标题翻译：半导体激光二极管
公开(公告)号：US08831062B2
公开(公告)日：2014-09-09
申请号：US13639833
申请日：2011-04-06
申请人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
发明人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/20 , H01S5/10 , H01S5/16
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译：半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。激光二极管在n区域和p区域之间设置有有源区域，其具有前端部分和后端部分，邻近n区域的n-金属化层，并且具有用于将电流注入到第一注入器中的第一注入器有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。至少一个金属化层的宽度大于有源区的宽度。这种布置导致在有源区域的前端附近的电流分布基本均匀。有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

2. 发明申请

US20130070800A1 SEMICONDUCTOR LASER DIODES 有权
标题翻译：半导体激光二极管
公开(公告)号：US20130070800A1
公开(公告)日：2013-03-21
申请号：US13639833
申请日：2011-04-06
申请人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
发明人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
IPC分类号： H01S5/40 , H01L21/28
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译：半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。激光二极管在n区和p区之间设置有一有源区，该区具有一前端和一后端段，n-金属化层位于邻近该n-区并具有用于将电流注入有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。至少一个金属化层的宽度大于有源区的宽度。这种布置导致在有源区域的前端附近的电流分布基本均匀。有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

3. 发明申请

US20110292496A1 LASER SYSTEM WITH HIGHLY LINEAR OUTPUT 有权
标题翻译：具有高线性输出的激光系统
公开(公告)号：US20110292496A1
公开(公告)日：2011-12-01
申请号：US12993617
申请日：2010-08-19
申请人： Stefan Mohrdiek , Evgeny Zibik , Hans Ulrich Pfeiffer , Boris Sverdlov
发明人： Stefan Mohrdiek , Evgeny Zibik , Hans Ulrich Pfeiffer , Boris Sverdlov
IPC分类号： H01S3/067
CPC分类号： H01S5/147 , G02B6/262 , G02B6/30 , G02B6/4203 , H01S5/028 , H01S5/065 , H01S5/101 , H01S5/1085 , H01S2301/02
摘要： A laser device having a semiconductor gain element optically coupled to an optical fiber by using an angled anamorphic fiber lens and including a wavelength-selective front reflector. The laser device possesses improved output characteristics such as a highly linear laser emission output, even when the amplification section produces a high amount of gain. Such a laser source can also be used in various applications such as pump lasers for fiber amplifiers or frequency doubling systems.
摘要翻译：一种具有半导体增益元件的激光器件，该半导体增益元件通过使用成角度的变形光纤透镜光耦合到光纤并且包括波长选择性前反射器。即使放大部产生大量的增益，激光装置具有改进的输出特性，例如高度线性的激光发射输出。这种激光源还可用于各种应用中，例如用于光纤放大器或倍频系统的泵浦激光器。

4. 发明授权

US08526103B2 Laser system with highly linear output 有权
标题翻译：激光系统具有高线性输出
公开(公告)号：US08526103B2
公开(公告)日：2013-09-03
申请号：US12993617
申请日：2010-08-19
申请人： Stefan Mohrdiek , Evgeny Zibik , Hans Ulrich Pfeiffer , Boris Sverdlov
发明人： Stefan Mohrdiek , Evgeny Zibik , Hans Ulrich Pfeiffer , Boris Sverdlov
IPC分类号： H01S3/00
CPC分类号： H01S5/147 , G02B6/262 , G02B6/30 , G02B6/4203 , H01S5/028 , H01S5/065 , H01S5/101 , H01S5/1085 , H01S2301/02
摘要： A laser device having a semiconductor gain element optically coupled to an optical fiber by using an angled anamorphic fiber lens and including a wavelength-selective front reflector. The laser device possesses improved output characteristics such as a highly linear laser emission output, even when the amplification section produces a high amount of gain. Such a laser source can also be used in various applications such as pump lasers for fiber amplifiers or frequency doubling systems.
摘要翻译：一种具有半导体增益元件的激光器件，该半导体增益元件通过使用成角度的变形光纤透镜光耦合到光纤并且包括波长选择性前反射器。即使放大部产生大量的增益，激光装置具有改进的输出特性，例如高度线性的激光发射输出。这种激光源还可用于各种应用中，例如用于光纤放大器或倍频系统的泵浦激光器。

5. 发明申请

US20050201438A1 Method for making a high power semiconductor laser diode 审中-公开
标题翻译：制造大功率半导体激光二极管的方法
公开(公告)号：US20050201438A1
公开(公告)日：2005-09-15
申请号：US11040246
申请日：2005-01-21
申请人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
发明人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
IPC分类号： H01L21/00 , H01L33/00 , H01S3/098 , H01S3/10 , H01S3/20 , H01S5/00 , H01S5/22
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/0655 , H01S5/20 , H01S5/2022 , H01S5/2219
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the lasers semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进设计，改进涉及一种抑制激光器的不期望的第一和更高阶模式的方法，消耗能量，不对激光的光输出有贡献，从而降低了其效率。该新颖效果由在激光二极管顶部包括CIG-复合索引引导元件的结构提供，所述CIG通过制造由一个或多个层组成的CIG元件并且包含至少一层提供光学吸收不期望的激光波长的模式。该CIG优选地包含作为半导体的第一接触层的绝缘层。 CIG元件通过所选择的处理步骤序列制造，特别是几个掩模步骤，并且在激光器半导体主体的厚度和覆盖范围内都被特别地成形，以提供期望的抑制特性。此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。

6. 发明授权

US5795395A Cake decorating system and method 失效
标题翻译：蛋糕装饰系统和方法
公开(公告)号：US5795395A
公开(公告)日：1998-08-18
申请号：US813215
申请日：1997-03-07
申请人： Ruth Ben-Matitayhu , Boris Sverdlov , Ilena Brailovski
发明人： Ruth Ben-Matitayhu , Boris Sverdlov , Ilena Brailovski
IPC分类号： A23G3/20 , A23G3/28 , A23G7/00 , A23G9/24 , B41J3/407 , B05C5/00
CPC分类号： A23G3/20 , A23G3/28 , A23G7/0037 , A23G9/245 , B41J3/4073
摘要： An apparatus and method for decorating a cake. A print head is provided that moves in a planar or linear domain and that dispenses edible colorant at positions corresponding to the pixels of a digital image. The cake is positioned parallel to the domain and displaced vertically from the domain by an appropriate displacement. The proper positioning of the cake is facilitated by a sensing mechanism for sensing the attitude of the cake with respect to the domain and a leveling mechanism, responsive to the sensing mechanism, for adjusting that attitude. A preferred sensing mechanism includes laser sources aimed at photodiode detectors: when the cake is properly positioned, the beams of light from the lasers are partially blocked. A preferred leveling mechanism includes adjustable legs supporting the table whereon the cake is placed under the print head.
摘要翻译：一种用于装饰蛋糕的装置和方法。提供打印头，其在平面或线性域中移动，并且在对应于数字图像的像素的位置处分配可食用着色剂。将滤饼平行于该区域定位，并通过适当的位移从该区域垂直移位。通过用于感测蛋糕相对于区域的姿态的感测机构和响应于感测机构的调平机构来调节该姿态来促进蛋糕的适当定位。优选的感测机构包括针对光电二极管检测器的激光源：当滤饼正确定位时，来自激光器的光束被部分阻挡。优选的调平机构包括支撑桌子的可调节腿，其中蛋糕被放置在打印头下方。

7. 发明申请

US20080123697A1 METHOD FOR MAKING A HIGH POWER SEMICONDUCTOR LASER DIODE 有权
标题翻译：制造高功率半导体激光二极管的方法
公开(公告)号：US20080123697A1
公开(公告)日：2008-05-29
申请号：US11972156
申请日：2008-01-10
申请人： Silke TRAUT , Berthold Schmidt , Boris Sverdlov , Achim Thies
发明人： Silke TRAUT , Berthold Schmidt , Boris Sverdlov , Achim Thies
IPC分类号： H01S3/098
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/0655 , H01S5/20 , H01S5/2022 , H01S5/2219
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进设计，改进涉及一种抑制激光器的不期望的第一和更高阶模式的方法，消耗能量，不对激光的光输出有贡献，从而降低了其效率。该新颖效果由在激光二极管顶部包括CIG-复合索引引导元件的结构提供，所述CIG通过制造由一个或多个层组成的CIG元件并且包含至少一层提供光学吸收不期望的激光波长的模式。该CIG优选地包含作为半导体的第一接触层的绝缘层。 CIG元件通过所选择的处理步骤序列，特别是几个掩模步骤制造，并且在激光器半导体主体的厚度和覆盖范围内都被特别地成形，以提供所需的抑制特性。此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。

8. 发明授权

US06819702B2 Pump laser diode with improved wavelength stability 有权
标题翻译：泵浦激光二极管具有改善的波长稳定性
公开(公告)号：US06819702B2
公开(公告)日：2004-11-16
申请号：US10242497
申请日：2002-09-11
申请人： Boris Sverdlov , Berthold Schmidt
发明人： Boris Sverdlov , Berthold Schmidt
IPC分类号： H01S308
CPC分类号： H01S5/028 , H01S5/0656 , H01S5/141 , H01S5/146
摘要： A pump laser diode for providing improved stability at various operating temperatures is disclosed. It includes a Fabry-Perot cavity formed by laser facets. Bragg Gratings or Fiber Bragg Gratings (FBG) in a pump module are provided, wherein the optical mirror losses are made to increase for wavelengths longer than the required emission wavelength, thus permitting the diode to be locked to an emission wavelength while operating at different temperatures. A stack of materials with different refractive indices is deposited on the back facet of the laser diode to achieve a change in optical mirror losses over longer wavelengths.
摘要翻译：公开了一种用于在各种工作温度下提供改进的稳定性的泵激光二极管它包括由激光刻面形成的法布里 - 珀罗腔。提供了一种泵模块中的布拉格光栅或光纤布拉格光栅（FBG），其中对于长于所需发射波长的波长，光学镜损耗增加，从而允许二极管在不同温度下工作时被锁定到发射波长。具有不同折射率的材料堆叠沉积在激光二极管的背面上，以实现较长波长的光镜损耗的变化。

9. 发明授权

US07623555B2 High power semiconductor laser diode 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US07623555B2
公开(公告)日：2009-11-24
申请号：US11972156
申请日：2008-01-10
申请人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
发明人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
IPC分类号： H01S3/098 , H01S3/113 , H01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/0655 , H01S5/20 , H01S5/2022 , H01S5/2219
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进设计，改进涉及一种抑制激光器的不期望的第一和更高阶模式的方法，消耗能量，不对激光的光输出有贡献，从而降低了其效率。该新颖效果由在激光二极管顶部包括CIG-复合索引引导元件的结构提供，所述CIG通过制造由一个或多个层组成的CIG元件并且包含至少一层提供光学吸收不期望的激光波长的模式。该CIG优选地包含作为半导体的第一接触层的绝缘层。 CIG元件通过所选择的处理步骤序列，特别是几个掩模步骤制造，并且在激光器半导体主体的厚度和覆盖范围内都被特别地成形，以提供所需的抑制特性。此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。

10. 发明授权

US06862300B1 High power semiconductor laser diode and method for making such a diode 有权
标题翻译：大功率半导体激光二极管及其制造方法
公开(公告)号：US06862300B1
公开(公告)日：2005-03-01
申请号：US10245199
申请日：2002-09-17
申请人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
发明人： Silke Traut , Berthold Schmidt , Boris Sverdlov , Achim Thies
IPC分类号： H01L21/00 , H01L33/00 , H01S3/098 , H01S3/10 , H01S3/20 , H01S5/00 , H01S5/22
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/0655 , H01S5/20 , H01S5/2022 , H01S5/2219
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting in a way of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. Essentially, the novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode. These CIG elements consist of one or a plurality of layers and must contain at least one layer which provides the optical absorption of undesired modes of the lasing wavelength and preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements may be specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，其改进特别地包括以下方式：抑制不期望的第一和更高阶模式激光器消耗能量并且不会对激光器的光输出有贡献，从而降低了其效率。本质上，新颖的效果由在激光二极管顶部包括CIG-复杂索引引导元件的结构提供。这些CIG元件由一层或多层组成，并且必须包含至少一层，其提供激发波长波长的不期望的模式的光学吸收，并且优选地包含作为半导体的第一接触层的绝缘层。 CIG元件可以在激光器的半导体主体的厚度和覆盖范围内都是特别成形的，以提供所需的抑制特性。此外，CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。

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