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1. 发明授权

US08320419B2 High power semiconductor laser diodes 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US08320419B2
公开(公告)日：2012-11-27
申请号：US12873382
申请日：2010-09-01
申请人： Martin Krejci , Norbert Lichtenstein , Stefan Weiss , Julien Boucart , René Todt
发明人： Martin Krejci , Norbert Lichtenstein , Stefan Weiss , Julien Boucart , René Todt
IPC分类号： H01S3/04
CPC分类号： H01S5/024 , H01S5/0014 , H01S5/0021 , H01S5/0224 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/4031 , H01S2301/14
摘要： A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEbar on a submount having a second coefficient CTEsub and a cooler having a third coefficient CTEcool. The submount/cooler assembly shows an effective fourth coefficient CTEeff differing from CTEbar. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEeff is selected to be either lower than both CTEbar and CTEcool or is selected to be between CTEbar and CTEcool. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 μm thickness and a Mo layer of 100-400 μm thickness, or a single material with a varying CTEsub. Both result in a CTEsub varying across the submount's thickness.
摘要翻译：高功率激光源包括具有第二系数CTEsub的底座上具有第一热膨胀系数CTEbar的激光二极管棒和具有第三系数CTEcool的冷却器。底座/冷却器组件显示与CTEbar不同的有效的第四系数CTEeff。该差异导致激光器的活性区域的晶格由于机械应力而变形。 CTEeff选择为低于CTEbar和CTEcool，或者选择为CTEbar和CTEcool之间。底座可以包括具有不同CTE的材料层，例如厚度为10-40μm的Cu层和100-400μm厚度的Mo层，或具有变化的CTEsub的单一材料。两者都导致CTEsub在底座的厚度上变化。

2. 发明授权

US06798815B2 High power semiconductor laser diode and method for making such a diode 有权
标题翻译：大功率半导体激光二极管及其制造方法
公开(公告)号：US06798815B2
公开(公告)日：2004-09-28
申请号：US10131335
申请日：2002-04-24
申请人： Berthold Schmidt , Susanne Pawlik , Norbert Lichtenstein
发明人： Berthold Schmidt , Susanne Pawlik , Norbert Lichtenstein
IPC分类号： H01S303
CPC分类号： H01S5/22 , H01S5/0202 , H01S5/10 , H01S5/1064 , H01S5/166 , H01S5/2036 , H01S5/204
摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge waveguide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved by combining this approach with a laser diode design termed “unpumped end sections” and described in copending U.S. patent application Ser. No. 09/852,994, entitled “High Power Semiconductor Laser Diode”. Preferable for an advantageous manufacturing process is a segmented ridge waveguide design with three straight segments, at least two of them differing in cross section or width, and two flared segments connecting the differing straight segments. This latter design results in a wafer pattern of identical and identically oriented laser diode structures, thus allowing the use of standard manufacturing processes.
摘要翻译：半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，其改进特别地包括激光器的脊形波导的新颖设计。本质上，新颖的设计包括具有至少两个直段，即具有恒定但不同横截面或宽度的段的分段脊波导，以及连接两个不同直段的至少一个扩口段。可以通过将该方法与称为“未抽头端部分”的激光二极管设计相结合并在共同未决的美国专利申请序列号Ser。题为“大功率半导体激光二极管”的No.09 / 852,994。优选的制造过程优选是具有三个直段的分段脊波导设计，其中至少两个横截面或宽度不同，以及两个连接不同直段的扩口段。后一种设计导致相同且相同方向的激光二极管结构的晶片图案，从而允许使用标准制造工艺。

3. 发明申请

US20050141578A1 Laser diode structure with blocking layer 审中-公开
标题翻译：具有阻挡层的激光二极管结构
公开(公告)号：US20050141578A1
公开(公告)日：2005-06-30
申请号：US10871895
申请日：2004-06-18
申请人： Benoit Reid , Arnaud Fily , Norbert Lichtenstein , D. Knight
发明人： Benoit Reid , Arnaud Fily , Norbert Lichtenstein , D. Knight
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2232 , H01S5/2224 , H01S5/2231 , H01S5/2237 , H01S5/32391
摘要： The present invention provides a self-aligned laser structure that can be fabricated on a p-substrate and provides a means for limiting the leakage current thereby improving the overall efficiency of the structure. The waveguide laser structure comprises a first series of layers deposited in sequence upon a p-InP, p-GaAs or p-GaN substrate or other form of p-substrate, wherein these layers form the p-clad layer. An active layer is subsequently deposited upon this first series of layers. A blocking layer of insulating or semi-insulating material is deposited upon the active layer, wherein this blocking layer has a trench formed therein, wherein this semi-insulating layer or layers are epitaxially deposited. The blocking layer provides a means for limiting current flow therethrough, thereby reducing leakage current. Upon the blocking layer are deposited a second series of layers completing the laser structure, wherein this second series of layers form the n-clad layer. Since the n-clad layer contains more than one material, the structure provides lateral waveguiding. Upon the completion of the deposition of all of the layers, a positive electrode is formed on the bottom surface of the first series of layers and a negative electrode is formed on the top of the second series of layers.
摘要翻译：本发明提供了可以在p-基板上制造的自对准激光器结构，并提供用于限制漏电流的装置，从而提高结构的整体效率。波导激光器结构包括依次沉积在p-InP，p-GaAs或p-GaN衬底或其他形式的p衬底上的第一系列层，其中这些层形成p覆层。随后在该第一系列层上沉积有源层。绝缘或半绝缘材料的阻挡层沉积在有源层上，其中该阻挡层具有形成在其中的沟槽，其中该半绝缘层被外延沉积。阻挡层提供了限制电流从而减少泄漏电流的装置。在阻挡层沉积完成激光结构的第二系列层，其中该第二系列层形成n覆层。由于n覆层包含多于一种材料，所以该结构提供横向波导。在完成所有层的沉积之后，在第一系列层的底表面上形成正电极，并且在第二系列层的顶部上形成负电极。

4. 发明申请

US20110051758A1 HIGH POWER SEMICONDUCTOR LASER DIODES 有权
标题翻译：大功率半导体激光二极管
公开(公告)号：US20110051758A1
公开(公告)日：2011-03-03
申请号：US12873382
申请日：2010-09-01
申请人： Martin KREJCI , Norbert LICHTENSTEIN , Stefan WEISS , Julien BOUCART , René TODT
发明人： Martin KREJCI , Norbert LICHTENSTEIN , Stefan WEISS , Julien BOUCART , René TODT
IPC分类号： H01S3/04 , B23K31/02
CPC分类号： H01S5/024 , H01S5/0014 , H01S5/0021 , H01S5/0224 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/4031 , H01S2301/14
摘要： A high power laser source comprises at least a bar of laser diodes with a first coefficient of thermal expansion (CTEbar), a submount onto which said laser bar is affixed with a second coefficient of thermal expansion (CTEsub), and a cooler onto which said submount is affixed with a third coefficient of thermal expansion (CTEcool). The submount/cooling assembly exhibits an effective fourth coefficient of expansion (CTEeff). According to the invention, mechanical stress exerted to the laser bar improves reliability and optical performance. To effect this, CTEeff must differ from CTEbar, CTEeff≠CTEbar. Preferably, CTEeff should differ by a predetermined amount from CTEbar. The difference is achieved in two ways: either by selecting CTEsub>CTEbar and CTEsub≦CTEcool, or by selecting CTEsub
摘要翻译：高功率激光源包括至少一列具有第一热膨胀系数（CTEbar）的激光二极管，所述激光条固定在其上的第二热膨胀系数（CTEsub）的底座，以及所述第二热膨胀系数底座固定有第三热膨胀系数（CTEcool）。底座/冷却组件展现出有效的第四扩展系数（CTEeff）。根据本发明，施加到激光棒的机械应力提高了可靠性和光学性能。为了实现这一点，CTEeff必须与CTEbar不同，CTEeff≠CTEbar。优选地，CTEeff应该与CTEbar不同的预定量。差异通过两种方式实现：通过选择CTE> CTEbar和CTEsub＆nlE; CTEcool，或者选择CTEsub

5. 发明授权

US08831062B2 Semiconductor laser diodes 有权
标题翻译：半导体激光二极管
公开(公告)号：US08831062B2
公开(公告)日：2014-09-09
申请号：US13639833
申请日：2011-04-06
申请人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
发明人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/20 , H01S5/10 , H01S5/16
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译：半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。激光二极管在n区域和p区域之间设置有有源区域，其具有前端部分和后端部分，邻近n区域的n-金属化层，并且具有用于将电流注入到第一注入器中的第一注入器有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。至少一个金属化层的宽度大于有源区的宽度。这种布置导致在有源区域的前端附近的电流分布基本均匀。有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

6. 发明申请

US20130070800A1 SEMICONDUCTOR LASER DIODES 有权
标题翻译：半导体激光二极管
公开(公告)号：US20130070800A1
公开(公告)日：2013-03-21
申请号：US13639833
申请日：2011-04-06
申请人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
发明人： Hans-Ulrich Pfeiffer , Andrew Cannon Carter , Jörg Troger , Norbert Lichtenstein , Michael Schwarz , Abram Jakubowicz , Boris Sverdlov
IPC分类号： H01S5/40 , H01L21/28
CPC分类号： H01S5/0425 , H01S5/0014 , H01S5/1039 , H01S5/1053 , H01S5/1064 , H01S5/16 , H01S5/2004 , H01S5/22
摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.
摘要翻译：半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。激光二极管在n区和p区之间设置有一有源区，该区具有一前端和一后端段，n-金属化层位于邻近该n-区并具有用于将电流注入有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。至少一个金属化层的宽度大于有源区的宽度。这种布置导致在有源区域的前端附近的电流分布基本均匀。有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

7. 发明申请

US20090104727A1 HIGH POWER SEMICONDUCTOR LASER DIODES 审中-公开
标题翻译：大功率半导体激光二极管
公开(公告)号：US20090104727A1
公开(公告)日：2009-04-23
申请号：US12233658
申请日：2008-09-19
申请人： Martin KREJCI , Stefan WEISS , Norbert LICHTENSTEIN , Hans Jorg TROGER
发明人： Martin KREJCI , Stefan WEISS , Norbert LICHTENSTEIN , Hans Jorg TROGER
IPC分类号： H01S5/024 , H01L21/02
CPC分类号： H01S5/4031 , H01S5/0021 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/02492
摘要： A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTEbar), the submount has a second coefficient of thermal expansion (CTEsub), and the cooler has a third coefficient of thermal expansion (CTEcool) the third coefficient (CTEcool) being higher than both said first coefficient (CTEbar) and said second coefficient (CTEsub). Contrary to the usual approach with a CTEsub matching the CTEbar, the second coefficient (CTEsub) is selected lower than both said first coefficient (CTEbar) and said third coefficient (CTEcool) according to the invention. A preferred range is CTEsub=k*CTEbar, with 0.4
摘要翻译：高功率激光源包括一根激光二极管，一个安装有所述激光条的基座，以及安装有所述底座的冷却器。激光棒具有第一热膨胀系数（CTEbar），底座具有第二热膨胀系数（CTEsub），冷却器具有第三系数（CTEcool），第三系数（CTEcool）高于两者所述第一系数（CTEbar）和所述第二系数（CTEsub）。与通过与CTEbar匹配的CTEsub的通常方法相反，根据本发明，第二系数（CTEsub）被选择为低于所述第一系数（CTEbar）和所述第三系数（CTEcool）。优选的范围是CTEsub = k * CTEbar，其中0.4

8. 发明授权

US07085299B2 High power semiconductor laser with a large optical superlattice waveguide 有权
标题翻译：大功率半导体激光器具有大型光学超晶格波导
公开(公告)号：US07085299B2
公开(公告)日：2006-08-01
申请号：US10800546
申请日：2004-03-15
申请人： Norbert Lichtenstein , Arnaud Christian Fily , Bertoit Reid
发明人： Norbert Lichtenstein , Arnaud Christian Fily , Bertoit Reid
IPC分类号： H01S3/04
CPC分类号： H01S5/20
摘要： The invention relates to high power semiconductor diode lasers of the type commonly used in opto-electronics, mostly as so-called pump lasers for fiber amplifiers in the field of optical communication, e.g. for an erbium-doped fiber amplifier (EDFA) or a Raman amplifier. Such a laser, having a single cavity and working in single transverse mode, is improved by placing a multilayer large optical superlattice structure (LOSL) into at least one of the provided cladding layers. This LOSL provides for a significantly improved shape of the exit beam allowing an efficient high power coupling into the fiber of an opto-electronic network.
摘要翻译：本发明涉及通常用于光电子的类型的大功率半导体二极管激光器，主要是用于光通信领域的光纤放大器的所谓的泵浦激光器。用于掺铒光纤放大器（EDFA）或拉曼放大器。通过将多层大型光学超晶格结构（LOSL）放置在所提供的包覆层中的至少一个中，可以改善具有单个腔并且以单一横向模式工作的这种激光器。该LOSL提供出口光束的显着改进的形状，允许有效的高功率耦合到光电网络的光纤中。

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