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1. 发明授权

US06960798B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06960798B2
公开(公告)日：2005-11-01
申请号：US10455842
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L21/336 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.
摘要翻译：半导体部件具有包含阻挡pn结的半导体本体，与第一电极连接的第一导电类型的源区，与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤，第一导电类型的漏极区连接到第二电极。面向排水区的第二导电类型的区域的一侧形成第一表面，并且在位于第一表面和漏区之间的第一表面和第二表面之间的区域中，包括第一和第二导电类型的区域彼此嵌套在一起第二表面定位在离开排水区一定距离处，使得彼此嵌套的第一和第二导电类型的区域不会到达排水区。

2. 发明授权

US07923330B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07923330B2
公开(公告)日：2011-04-12
申请号：US11866151
申请日：2007-10-02
申请人： Hans Martin Weber
发明人： Hans Martin Weber
IPC分类号： H01L21/336 , H01L21/8242 , H01L21/334 , H01L21/762
CPC分类号： H01L29/7813 , H01L29/086 , H01L29/0878 , H01L29/267 , H01L29/407 , H01L29/4236 , H01L29/42376 , H01L29/456 , H01L29/66348 , H01L29/66719 , H01L29/66734
摘要： A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into the semiconductor substrate. The thickness of the semiconductor substrate is then reduced by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures. At least a first mask is formed on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures, and doping regions are formed in the semiconductor substrate between the trench structures.
摘要翻译：一种制造半导体器件的方法包括提供包括第一表面和与第一表面相对布置的第二表面的半导体衬底。半导体衬底包括从第一表面延伸到半导体衬底的多个沟槽结构。然后通过在第二表面去除半导体材料来减小半导体衬底的厚度，以获得具有暴露的沟槽结构的底部的经处理的第二表面。至少第一掩模以相对于沟槽结构的底部的自对准方式在经处理的第二表面上形成，并且在沟槽结构之间的半导体衬底中形成掺杂区域。

3. 发明申请

US20090085104A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090085104A1
公开(公告)日：2009-04-02
申请号：US11866151
申请日：2007-10-02
申请人： Hans Martin Weber
发明人： Hans Martin Weber
IPC分类号： H01L29/78 , H01L21/336 , H01L21/265
CPC分类号： H01L29/7813 , H01L29/086 , H01L29/0878 , H01L29/267 , H01L29/407 , H01L29/4236 , H01L29/42376 , H01L29/456 , H01L29/66348 , H01L29/66719 , H01L29/66734
摘要： A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into the semiconductor substrate. The thickness of the semiconductor substrate is then reduced by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures. At least a first mask is formed on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures, and doping regions are formed in the semiconductor substrate between the trench structures.
摘要翻译：一种制造半导体器件的方法包括提供包括第一表面和与第一表面相对布置的第二表面的半导体衬底。半导体衬底包括从第一表面延伸到半导体衬底的多个沟槽结构。然后通过在第二表面去除半导体材料来减小半导体衬底的厚度，以获得具有暴露的沟槽结构的底部的经处理的第二表面。至少第一掩模以相对于沟槽结构的底部的自对准方式在经处理的第二表面上形成，并且在沟槽结构之间的半导体衬底中形成掺杂区域。

4. 发明授权

US06828609B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06828609B2
公开(公告)日：2004-12-07
申请号：US10455834
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/7801 , H01L29/7802
摘要： A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.
摘要翻译：具有半导体主体的半导体部件包括阻挡pn结，第一导电类型的源极区域，并且与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接合，并且第一导电类型的漏极区域导电类型。第二导电类型的区域侧面对排水区，形成第一表面，并且在第一表面和第一和第二导电类型的第二表面区域之间的区域彼此嵌套。第一和第二导电类型的区域是可变地掺杂的，在第一表面附近，第二导电类型的掺杂原子占主导地位，并且在第二表面附近，第一导电类型的掺杂原子占主导地位。此外，提供了第一和第二导电类型的多个浮动区域。

5. 发明授权

US06894329B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06894329B2
公开(公告)日：2005-05-17
申请号：US10455839
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L21/336 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.
摘要翻译：半导体部件具有包含阻挡pn结的半导体主体，与第一电极连接并与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤的第一导电类型的源极区和漏极连接到第二电极的第一导电类型的区域。面向排水区的第二导电类型的区域的一侧形成第一表面，并且在位于第一表面和漏区之间的第一表面和第二表面之间的区域中，包括第一和第二导电类型的区域彼此嵌套在一起第二表面与面向源区的排水区的表面重合，使得彼此嵌套的第一和第二导电类型的区域到达排水区。

6. 发明授权

US06825514B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06825514B2
公开(公告)日：2004-11-30
申请号：US10455858
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/7801 , H01L29/7802
摘要： A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of: varying in individual semiconductor layers, by doping, the degree of compensation in the regions of the second conductivity type.
摘要翻译：一种用于制造半导体器件的方法，该半导体器件包括阻挡pn结，与第一电极连接并与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤的第一导电类型的源区，以及连接到第二电极的第一导电类型的漏极区，形成第一表面的第二导电类型的区域的侧面，并且在第一表面和位于第一表面之间的第二表面之间的区域中并且漏区，第一和第二导电类型的区域彼此嵌套，包括以下步骤：通过掺杂在各个半导体层中改变第二导电类型的区域中的补偿程度。

7. 发明授权

US06819089B2 Power factor correction circuit with high-voltage semiconductor component 有权
标题翻译：功率因数校正电路采用高压半导体元件
公开(公告)号：US06819089B2
公开(公告)日：2004-11-16
申请号：US10633044
申请日：2003-08-01
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L704
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7802 , H01L29/7825
摘要： A switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier, a semiconductor switch formed by a compensation device coupled in parallel with the rectifier and the inductor. The output circuit comprises a diode coupled in series with a capacitor both coupled in parallel with the semiconductor switch. An input current sensor, and a control unit for controlling the compensation device are provided.
摘要翻译：包括功率因数校正电路的开关电源包括整流器，与整流器串联耦合的电感器，由与整流器和电感器并联耦合的补偿器件形成的半导体开关。输出电路包括与与半导体开关并联耦合的电容器串联耦合的二极管。提供输入电流传感器和用于控制补偿装置的控制单元。

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