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    • 1. 发明授权
    • Ferroelectric data processing device
    • 铁电数据处理装置
    • US06498744B2
    • 2002-12-24
    • US09978034
    • 2001-10-17
    • Hans Gude GudesenPer-Erik NordalGeirr Ivarsson Leistad
    • Hans Gude GudesenPer-Erik NordalGeirr Ivarsson Leistad
    • G11C1122
    • H01L27/11502G11C11/22H01L27/0688
    • In a ferroelectric data processing device for processing and/or storage of data with passive or electrical addressing a data-carrying medium is used in the form of a thin film (1) of ferroelectric material which by an applied electric field is polarized to determined polarization states or switched between these and is provided as a continuous layer in or adjacent toelectrode structures in the form of a matrix. A logic element (4) is formed at the intersection between an x electrode (2) and a y electrode (3) of the electrode matrix. The logic element (4) is addressed by applying to the electrodes (2, 3) a voltage greater than the coercivity field of the ferroelectric material. Dependent on the polarization state and the form of the hysteresis loop of the ferroelectric material a distinct detection of the polarization state in the logic element (4) is obtained and it may also be possible to switch between the polarization states of the logic element, which hence may be used for implementing a bistable switch or a memory cell. The data processing device according to the invention may be stacked layerwise if the separate layers are separated by an electrical isolating layer and hence be used for implementing volumetric data processing devices.
    • 在用于处理和/或存储具有无源或电寻址的数据的铁电数据处理装置中,数据承载介质以铁电材料薄膜(1)的形式使用,其通过施加的电场被极化以确定极化 状态或在这些之间切换并且以矩阵的形式提供为电极结构中或邻近的连续层。 逻辑元件(4)形成在电极矩阵的x电极(2)和y电极(3)之间的相交处。 逻辑元件(4)通过向电极(2,3)施加大于铁电材料的矫顽力场的电压来寻址。 取决于极化状态和铁电材料的磁滞回线的形式,获得逻辑元件(4)中极化状态的不同检测,并且还可以在逻辑元件的极化状态之间切换,其中 因此可以用于实现双稳态开关或存储单元。 如果分离的层被电绝缘层分开,则根据本发明的数据处理设备可以层叠堆叠,并且因此用于实现体积数据处理设备。
    • 2. 发明授权
    • Electrically addressable passive device, method for electrical
addressing of the same and uses of the device and the method
    • 可寻址的无源器件,其电气寻址方法以及器件的使用和方法
    • US6055180A
    • 2000-04-25
    • US147680
    • 1999-02-12
    • Hans Gude GudesenPer-Erik NordalGeirr Ivarsson Leistad
    • Hans Gude GudesenPer-Erik NordalGeirr Ivarsson Leistad
    • G11C11/42G11C11/21G11C13/00G11C13/02G11C13/04G11C16/02G11C17/00G11C17/14H03K19/12H03K19/14G11C11/36
    • G11C13/0014B82Y10/00G11C13/0016G11C13/04G11C17/00G11C17/14G11C17/165G11C17/16G11C2213/71G11C2213/77
    • An electrically addressable passive device for registration, storage and/or processing of data comprises a functional medium (1) in the form of a continuous or patterned structure (S) which may undergo a physical or chemical change of state. The functional medium (1) comprises individually addressable cells (2) which represent a registered or detected value or are assigned a predetermined logical value for the cell. The cell (2) is provided between the anode (3) and cathode (4) in an electrode means (E) which contacts the function medium in the cell and causes an electrical coupling therethrough, the functional medium having a non-linear impedance characteristic, whereby the cell (2) directly can be supplied with energy which effects a change in the state of the cell. In a method for electrical addressing of the passive device wherein the addressing comprises operations for i.a. detection and registration as well as further operations for writing, reading and switching of a logical value assigned to the cell, electric energy is applied directly to the functional medium of the cell in order to change its state and hence effect an addressing operation. Use in optical detector means, volumetric data storage devices or data processing devices.
    • PCT No.PCT / NO98 / 00185 Sec。 371日期1999年2月12日 102(e)1999年2月12日PCT PCT。1998年6月17日PCT公布。 公开号WO98 / 58383 日期1998年12月23日用于数据的配准,存储和/或处理的电可寻址无源器件包括可能经历物理或化学状态变化的连续或图案化结构(S)形式的功能介质(1)。 功能介质(1)包括单独的可寻址单元(2),其表示已注册或检测到的值,或者为该单元分配了预定的逻辑值。 电池(2)设置在阳极(3)和阴极(4)之间的电极装置(E)中,电极装置(E)与电池中的功能介质接触并引起电耦合,功能介质具有非线性阻抗特性 ,从而可以直接向电池(2)提供影响电池状态变化的能量。 在一种用于无源器件的电寻址的方法中,其中所述寻址包括对于i.a的操作。 检测和注册以及分配给单元的逻辑值的写入,读取和切换的进一步操作,将电能直接施加到单元的功能介质,以便改变其状态,从而实现寻址操作。 用于光检测装置,体积数据存储装置或数据处理装置。
    • 4. 发明授权
    • Optical logic element and methods for respectively its preparation and optical addressing, as well as the use thereof in an optical logic device
    • 光学逻辑元件和分别用于光学逻辑器件的光学逻辑元件和方法以及其在光学逻辑器件中的应用
    • US06219160B1
    • 2001-04-17
    • US09230920
    • 1999-03-25
    • Per-Erik NordalHans Gude GudesenGeirr Ivarsson Leistad
    • Per-Erik NordalHans Gude GudesenGeirr Ivarsson Leistad
    • G02F300
    • G11C13/0014B82Y10/00G02F3/02G11C7/005G11C11/5664G11C13/00G11C13/0016G11C13/04Y10S359/90
    • In a multistable optical logic element with a light-sensitive organic material (1) which undergoes a photocycle with several physical states by irradiation with light, and wherein a physical state is assigned a logical value which can be changed by addressing the element optically, the element initially before the addressing is in a metastable state generated in advance. A multistable optical logic element has been made proximity-addressable by providing at least a color light source (2) for optical addressing and at least one color-sensitive optical detector (5) adjacent to the light-sensitive material. In a method for preparing of the light-sensitive material (1) a desired initial metastable state is generated in the photocycle and assigned a determined logical value for the element. In a method for optical addressing of the optical logic element steps for respectively writing and storing, reading, erasing and switching comprises generating transitions between states in the photocycle and detection of the states. Use in an optical logical device for storing and processing of data.
    • 在具有光敏有机材料(1)的多光学光学逻辑元件中,其通过用光照射经历具有若干物理状态的光循环,并且其中物理状态被分配可以通过光学寻址元素而改变的逻辑值, 元素最初在寻址之前处于预先生成的亚稳态中。 通过至少提供用于光寻址的彩色光源(2)和与感光材料相邻的至少一个颜色敏感的光学检测器(5),已经使多路光逻辑元件变得可接近寻址。 在制备感光材料(1)的方法中,在光循环中产生期望的初始亚稳态,并为该元素分配确定的逻辑值。 在用于光学逻辑元件的光寻址的方法中,用于分别写入和存储,读取,擦除和切换的步骤包括在照相机中的状态之间产生转变并检测状态。 在光学逻辑设备中用于存储和处理数据。
    • 6. 发明授权
    • Method for operating a data storage apparatus employing passive matrix addressing
    • 用于操作采用无源矩阵寻址的数据存储装置的方法
    • US07352612B2
    • 2008-04-01
    • US10579968
    • 2004-11-24
    • Per HambergChrister KarlssonPer-Erik NordalNicklas OjakangasJohan CarlssonHans Gude Gudesen
    • Per HambergChrister KarlssonPer-Erik NordalNicklas OjakangasJohan CarlssonHans Gude Gudesen
    • G11C11/22
    • G11C11/22G06F12/0238G06F2212/1036G06F2212/7211G11C8/12G11C2013/0083
    • In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.
    • 在采用无源矩阵寻址的数据存储装置,特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中,通常按时间协调方式控制符合寻址操作的电位的应用, 到电压脉冲协议。 在寻址操作中,通过第一有效电压脉冲将数据存储单元设置为第一偏振状态,然后根据电压脉冲协议设置第二电压脉冲,该第二电压脉冲可以是具有相反极性的第二有源电压脉冲 的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。 因此,所寻址的单元被设置为由寻址操作指定的预定极化状态。 设备的数据存储单元被提供在两个或更多个电分离的段中,使得每个段包括用于该设备的单独的物理地址空间。 在寻址操作中,数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。
    • 7. 发明授权
    • Folded memory layers
    • 折叠内存层
    • US06762950B2
    • 2004-07-13
    • US10306229
    • 2002-11-29
    • Hans Gude GudesenPer-Erik Nordal
    • Hans Gude GudesenPer-Erik Nordal
    • G11C1122
    • G11C11/22H01L27/10
    • A ferroelectric or electret volumetric memory device with a memory material provided in sandwich between first and second electrode layers with stripe-like electrodes forming word lines and bit lines of a matrix-addressable memory array, memory cells are defined in volumes of memeory material in between two crossing word lines and bit lines and a plurality of memory arrays are provided in a stacked arrangement. A stack of memory arrays is formed by tow or more ribbon-like structures, which are folded and/or braided into each other. Each ribbon-like structure includes a flexible substrate of non-conducting material and the electrode layers respectively provided on each surface of the substrate and including the parallel strip-like electrodes extending along the ribbon-like structure. A layer of memory material covers one of the electrode layers whereby each memory array of the stack is formed by overlapping portions of a pair of adjacent ribbon-like structures and crossing in substantially orthogonal relationship.
    • 具有记忆材料的铁电体或驻极体体积存储装置,其具有在形成矩阵可寻址存储器阵列的字线和位线的带条形电极的第一和第二电极层之间夹层提供的存储器单元, 以堆叠的方式设置两个交叉字线和位线以及多个存储器阵列。 一叠存储器阵列由丝束状或更多的带状结构形成,这些结构被折叠和/或编织成彼此。 每个带状结构包括非导电材料的柔性基板和分别设置在基板的每个表面上并包括沿着带状结构延伸的平行条状电极的电极层。 存储器材料层覆盖电极层之一,由此堆叠的每个存储器阵列由一对相邻的带状结构的重叠部分形成,并以基本正交的关系交叉。
    • 8. 发明授权
    • Optical data storage medium and method for writing and reading of data
    • 光学数据存储介质和数据写入和读取方法
    • US6052354A
    • 2000-04-18
    • US981425
    • 1997-12-23
    • Hans Gude GudesenPer-Erik NordalRolv M.o slashed.ll NilsenThormod N.ae butted.ringsrud
    • Hans Gude GudesenPer-Erik NordalRolv M.o slashed.ll NilsenThormod N.ae butted.ringsrud
    • G02B5/18G11B7/0033G11B7/0065G11B7/24G11C13/04G11B7/00
    • G11B7/0033G11B7/0065G11B7/24G11C13/04
    • In an optical data storage medium with a storage area formed from a transparent, homogenous base material and with a number of optically active structures at one side of the storage area, the optically active structures are diffractive optical elements which can focus a beam of light incident on the storage area on to one or more points in the storage area and/or a redirected beam of light or emitted light radiation from this or these points on to a point outside the optical storage medium. During writing/reading of data in the storage medium, the diffractive optical elements are used for focusing the write/read beam in order to generate a data carrying structure or read data stored in such a data carrying structure, respectively. By exploiting the special optical properties of diffractive optical elements, it is possible to achieve parallel writing/reading of data, possibly in several parallel storage layers in the optical storage medium or randomly distributed therein, the optical storage medium thus providing a genuine volumetric storage and a corresponding genuine volumetric accessing of the stored data.
    • PCT No.PCT / NO96 / 00155 Sec。 371 1997年12月23日第 102(e)1997年12月23日PCT PCT 1996年6月24日PCT公布。 出版物WO97 / 01171 日期1997年1月9日在具有由透明均质基材形成的存储区域和在存储区域的一侧具有多个光学活性结构的光学数据存储介质中,光学活性结构是可聚焦的衍射光学元件 入射到存储区域中的光束到存储区域中的一个或多个点和/或重定向的光束或发射的光辐射从该或这些点到光存储介质外的点。 在存储介质中写入/读取数据期间,衍射光学元件用于聚焦写入/读取光束,以便分别产生存储在这种数据承载结构中的数据承载结构或读取数据。 通过利用衍射光学元件的特殊光学特性,可以实现数据的并行写入/读取,可能在光存储介质中的几个并行存储层中或随机分布在其中,光学存储介质因此提供真正的容积存储, 存储数据的对应的真实容量访问。