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    • 1. 发明授权
    • Plasmon enhanced nanowire light emitting diode
    • 等离子体增强纳米线发光二极管
    • US08129710B2
    • 2012-03-06
    • US12262451
    • 2008-10-31
    • Hans ChoDavid FattalNathaniel Quitoriano
    • Hans ChoDavid FattalNathaniel Quitoriano
    • H01L33/00
    • H01L33/18
    • A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding the nanowire, and an insulating layer, which is plasmonically thin, isolating the shell layer from the nanowire. The shell layer supports a surface plasmon that couples to the semiconductor junction by an evanescent field. Light is generated in a vicinity of the semiconductor junction and the surface plasmon is coupled to the semiconductor junction during light generation. The coupling enhances one or both of an efficiency of light emission and a light emission rate of the LED. A method of making the nanowire LED includes forming the nanowire, providing the insulating layer on the surface of the nanowire, and forming the shell layer on the insulating layer in the vicinity of the semiconductor junction.
    • 纳米线发光二极管(LED)和发光的方法采用等离子体激发模式。 纳米线LED包括具有半导体结的纳米线,同轴地围绕纳米线的壳层,以及等离子体薄的绝缘层,将壳层与纳米线隔离。 壳层支撑通过ev逝场耦合到半导体结的表面等离子体。 在半导体结附近产生光,并且在光产生期间,表面等离子体激元耦合到半导体结。 耦合增强了LED的发光效率和发光速率的一个或两个。 制造纳米线LED的方法包括形成纳米线,在纳米线的表面上提供绝缘层,并在半导体结附近的绝缘层上形成壳层。