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1. 发明授权

US08043687B2 Structure including a graphene layer and method for forming the same 失效
标题翻译：包括石墨烯层的结构及其形成方法
公开(公告)号：US08043687B2
公开(公告)日：2011-10-25
申请号：US12253158
申请日：2008-10-16
申请人： Theodore I. Kamins , R. Stanley Williams , Nathaniel Quitoriano
发明人： Theodore I. Kamins , R. Stanley Williams , Nathaniel Quitoriano
IPC分类号： B32B9/00 , B32B19/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/02 , C30B25/02 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , Y10T428/24562 , Y10T428/24612 , Y10T428/30
摘要： A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.
摘要翻译：本文公开了一种形成石墨烯层的方法。该方法包括在衬底上建立绝缘层，使得形成暴露衬底表面的至少一个种子区域。将种子区域中的种子材料暴露于含碳前体气体，由此引发种子材料上的石墨烯层的成核，并且能够沿着绝缘层的表面的至少一部分横向生长石墨烯层。

2. 发明申请

US20100003462A1 Structure Including A Graphene Layer And Method For Forming The Same 失效
标题翻译：包括石墨烯层的结构及其形成方法
公开(公告)号：US20100003462A1
公开(公告)日：2010-01-07
申请号：US12253158
申请日：2008-10-16
申请人： Theodore I. Kamins , R. Stanley Williams , Nathaniel Quitoriano
发明人： Theodore I. Kamins , R. Stanley Williams , Nathaniel Quitoriano
IPC分类号： B32B9/00 , B32B3/26 , C30B23/04
CPC分类号： C30B29/02 , C30B25/02 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , Y10T428/24562 , Y10T428/24612 , Y10T428/30
摘要： A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.
摘要翻译：本文公开了一种形成石墨烯层的方法。该方法包括在衬底上建立绝缘层，使得形成暴露衬底表面的至少一个种子区域。将种子区域中的种子材料暴露于含碳前体气体，由此引发种子材料上的石墨烯层的成核，并且能够沿着绝缘层的表面的至少一部分横向生长石墨烯层。

3. 发明授权

US07964927B2 Semiconductor device and method for strain controlled optical absorption 有权
标题翻译：用于应变控制光吸收的半导体器件和方法
公开(公告)号：US07964927B2
公开(公告)日：2011-06-21
申请号：US12243155
申请日：2008-10-01
申请人： Nathaniel Quitoriano , Theodore I. Kamins
发明人： Nathaniel Quitoriano , Theodore I. Kamins
IPC分类号： H01L31/0232
CPC分类号： H01L31/0248
摘要： A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap.
摘要翻译：具有受控光吸收的半导体器件包括衬底和由衬底支撑的半导体层。半导体在与半导体层的带隙有关的预定光频率下具有可变的光吸收。还包括耦合到半导体层的应变施加结构，以在半导体层中产生应变以改变半导体带隙。

4. 发明授权

US08198706B2 Multi-level nanowire structure and method of making the same 有权
标题翻译：多层纳米线结构及制作方法
公开(公告)号：US08198706B2
公开(公告)日：2012-06-12
申请号：US12243853
申请日：2008-10-01
申请人： Theodore I. Kamins , Nathaniel Quitoriano
发明人： Theodore I. Kamins , Nathaniel Quitoriano
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/0237 , H01L21/02433 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/02609 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L31/035281 , H01L31/03529 , Y02E10/50 , Y10S977/762 , Y10S977/778 , Y10S977/813
摘要： A method for making a multi-level nanowire structure includes establishing a first plurality of nanowires on a substrate surface, wherein at least some of the nanowires are i) aligned at a predetermined crystallographically defined angle with respect to the substrate surface, ii) aligned substantially perpendicular with respect to the substrate surface, or iii) combinations of i and ii. An insulating layer is established between the nanowires of the first plurality such that one of two opposed ends of at least some of the nanowires positioned i) at the predetermined crystallographically defined angle, ii) substantially perpendicular with respect to the substrate surface, or iii) combinations of i and ii is exposed. Regions are grown from each of the exposed ends, and such regions coalesce to form a substantially continuous layer on the insulating layer. A second plurality of nanowires is established on the substantially continuous layer.
摘要翻译：制造多层纳米线结构的方法包括在衬底表面上建立第一多个纳米线，其中至少一些纳米线是i）相对于衬底表面以预定的晶体学限定的角度排列，ii）基本上对准垂直于衬底表面，或iii）i和ii的组合。在第一多个纳米线之间建立绝缘层，使得至少一些纳米线的两个相对端中的一个位于i）处于预定的晶体学限定的角度，ii）相对于衬底表面基本垂直，或iii） i和ii的组合被暴露。区域从每个暴露端生长，并且这些区域聚结以在绝缘层上形成基本上连续的层。在基本连续的层上建立第二多个纳米线。

5. 发明申请

US20090189144A1 Device For Absorbing Or Emitting Light And Methods Of Making The Same 有权
标题翻译：吸收或发光的装置及其制作方法
公开(公告)号：US20090189144A1
公开(公告)日：2009-07-30
申请号：US12243804
申请日：2008-10-01
申请人： Nathaniel Quitoriano , Theodore I. Kamins
发明人： Nathaniel Quitoriano , Theodore I. Kamins
IPC分类号： H01L29/06 , H01J40/00 , H01L21/20
CPC分类号： H01L31/101 , H01L21/02573 , H01L21/02603 , H01L21/02617 , H01L21/02645 , H01L27/14647 , Y10S977/932 , Y10S977/95 , Y10S977/953
摘要： A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material.
摘要翻译：本文公开的装置包括在第一层和第二层之间建立的第一层，第二层和第一多个纳米线。第一多个纳米线由第一半导体材料形成。该装置还包括第二层和第三层之间建立的第三层和第二组纳米线。第二多个纳米线由具有与第一半导体材料的带隙相同或不同的带隙的第二半导体材料形成。

6. 发明授权

US08030729B2 Device for absorbing or emitting light and methods of making the same 有权
标题翻译：用于吸收或发射光的装置及其制造方法
公开(公告)号：US08030729B2
公开(公告)日：2011-10-04
申请号：US12243804
申请日：2008-10-01
申请人： Nathaniel Quitoriano , Theodore I. Kamins
发明人： Nathaniel Quitoriano , Theodore I. Kamins
IPC分类号： H01L31/06
CPC分类号： H01L31/101 , H01L21/02573 , H01L21/02603 , H01L21/02617 , H01L21/02645 , H01L27/14647 , Y10S977/932 , Y10S977/95 , Y10S977/953
摘要： A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material.
摘要翻译：本文公开的装置包括在第一层和第二层之间建立的第一层，第二层和第一多个纳米线。第一多个纳米线由第一半导体材料形成。该装置还包括第二层和第三层之间建立的第三层和第二组纳米线。第二多个纳米线由具有与第一半导体材料的带隙相同或不同的带隙的第二半导体材料形成。

7. 发明申请

US20090108387A1 Semiconductor Device And Method For Strain Controlled Optical Absorption 有权
标题翻译：用于应变控制光吸收的半导体器件和方法
公开(公告)号：US20090108387A1
公开(公告)日：2009-04-30
申请号：US12243155
申请日：2008-10-01
申请人： Nathaniel Quitoriano , Theodore I. Kamins
发明人： Nathaniel Quitoriano , Theodore I. Kamins
IPC分类号： H01L31/0232 , H01L31/0248 , H01L21/02
CPC分类号： H01L31/0248
摘要： A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap.
摘要翻译：具有受控光吸收的半导体器件包括衬底和由衬底支撑的半导体层。半导体在与半导体层的带隙有关的预定光频率下具有可变的光吸收。还包括耦合到半导体层的应变施加结构，以在半导体层中产生应变以改变半导体带隙。

8. 发明申请

US20110006348A1 ROUNDED THREE-DIMENSIONAL GERMANIUM ACTIVE CHANNEL FOR TRANSISTORS AND SENSORS 失效
标题翻译：用于晶体管和传感器的三维三维有源通道
公开(公告)号：US20110006348A1
公开(公告)日：2011-01-13
申请号：US12501259
申请日：2009-07-10
申请人： Hans Cho , Theodore I. Kamins , Nathaniel Quitoriano
发明人： Hans Cho , Theodore I. Kamins , Nathaniel Quitoriano
IPC分类号： H01L29/423 , H01L21/336 , H01L29/78
CPC分类号： H01L29/423 , B82Y10/00 , G01N27/414 , H01L21/02532 , H01L21/02636 , H01L21/02667 , H01L29/0665 , H01L29/0673 , H01L29/125 , H01L29/205 , H01L29/66439 , H01L29/775 , H01L29/7854
摘要： A process is provided for fabricating rounded three-dimensional germanium active channels for transistors and sensors. For forming sensors, the process comprises providing a crystalline silicon substrate; depositing an oxide mask on the crystalline silicon substrate; patterning the oxide mask with trenches to expose linear regions of the silicon substrate; epitaxially grow germanium selectively in the trenches, seeded from the silicon wafer; optionally etching the SiO2 mask partially, so that the cross section resembles a trapezoid on a stem; and annealing at an elevated temperature. The annealing process forms the rounded channel. For forming transistors, the process further comprises depositing and patterning a gate oxide and gate electrode onto this structure to form the gate stack of a MOSFET device; and after patterning the gate, implanting dopants into the source and drain located on the parts of the germanium cylinder on either side of the gate line.
摘要翻译：提供了一种用于制造用于晶体管和传感器的圆形三维锗活性通道的工艺。对于形成传感器，该方法包括提供晶体硅衬底; 在所述晶体硅衬底上沉积氧化物掩模; 用沟槽图案化氧化物掩模以暴露硅衬底的线性区域; 在沟槽中选择性地外延生长锗，从硅晶片接种; 可选地部分地蚀刻SiO 2掩模，使得横截面类似于杆上的梯形; 并在高温退火。退火过程形成圆形通道。为了形成晶体管，该工艺还包括将栅极氧化物和栅电极沉积并图案化到该结构上以形成MOSFET器件的栅叠层; 并且在图案化栅极之后，将掺杂剂注入位于栅极线两侧的锗圆筒部分上的源极和漏极。

9. 发明申请

US20090246460A1 Structure And Method For Forming Crystalline Material On An Amorphous Structure 审中-公开
标题翻译：在非晶结构上形成结晶材料的结构和方法
公开(公告)号：US20090246460A1
公开(公告)日：2009-10-01
申请号：US12243834
申请日：2008-10-01
申请人： Hans Cho , Theodore I. Kamins , Nathaniel Quitoriano
发明人： Hans Cho , Theodore I. Kamins , Nathaniel Quitoriano
IPC分类号： H01L21/20 , B32B9/04 , B32B3/10
CPC分类号： H01L21/0237 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02639 , Y10T428/24331 , Y10T428/24777 , Y10T428/24851
摘要： A structure includes a first amorphous layer and a second amorphous layer established on the first amorphous layer such that at least an edge of the first amorphous layer or the second amorphous having a predetermined geometry is exposed. A material having a controlled crystal orientation is selectively formed adjacent the exposed edge of the first amorphous layer or the second amorphous having the predetermined geometry.
摘要翻译：一种结构包括在第一非晶层上建立的第一非晶层和第二非晶层，使得暴露出具有预定几何形状的第一非晶层或第二非晶体的至少一个边缘。具有受控晶体取向的材料与第一非晶层的暴露边缘或具有预定几何形状的第二非晶体相邻地选择性地形成。

10. 发明授权

US08787064B2 Programmable bipolar electronic device 有权
标题翻译：可编程双极电子器件
公开(公告)号：US08787064B2
公开(公告)日：2014-07-22
申请号：US13130805
申请日：2009-01-13
申请人： Theodore I. Kamins , R. Stanley Williams
发明人： Theodore I. Kamins , R. Stanley Williams
IPC分类号： G11C11/00
CPC分类号： G11C13/0002 , G11C13/003 , G11C2213/52 , G11C2213/53 , H01L27/101 , H01L27/1026 , H01L45/08 , H01L45/1206 , H01L45/122 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A configurable memristive device (300) for regulating an electrical signal includes a memristive matrix (350) containing a first dopant species; emitter (320), collector (310), and a base electrodes (330, 340) which are in contact with the memristive matrix (350); and a mobile dopant species contained within a central region (360) contiguous with the base electrodes (330, 340), the mobile dopant species moving within the memristive matrix (350) in response to a programming electrical field. A method of configuring and using a memristive device (300) includes: applying a programming electrical field across a memristive matrix (350) such that a mobile dopant species creates a central doped region (360) which bisects the memristive matrix (350); and applying a control voltage to the central doped region (360) to regulate current flow between an emitter electrode (320) and a collector electrode (310).
摘要翻译：用于调节电信号的可配置忆阻装置（300）包括含有第一掺杂剂物质的忆阻矩阵（350）发射极（320），集电极（310）以及与所述忆阻矩阵（350）接触的基极（330,340）; 以及包含在与所述基极（330,340）相邻的中心区域（360）内的移动掺杂剂物质，所述移动掺杂剂物质响应于编程电场在所述忆阻矩阵（350）内移动。一种配置和使用忆阻器件（300）的方法包括：跨越忆阻矩阵（350）施加编程电场，使得移动掺杂物物质形成将所述忆阻矩阵（350）平分的中心掺杂区域（360）; 以及向所述中心掺杂区域（360）施加控制电压以调节发射极电极（320）和集电极电极（310）之间的电流。

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