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    • 2. 发明申请
    • Transistor device
    • 晶体管器件
    • US20070090454A1
    • 2007-04-26
    • US11259335
    • 2005-10-26
    • Chin HuangJeffrey HintzmanDennis SchloemanHang Liao
    • Chin HuangJeffrey HintzmanDennis SchloemanHang Liao
    • H01L29/76
    • H01L29/402H01L29/0696H01L29/42368H01L29/4238H01L29/66681H01L29/7816H01L29/7823
    • A transistor device is provided, including a lightly doped layer of semiconductor material of a first type and a body region of semiconductor material of a second type. A source region of the first type is formed in the body region. The source region being more doped than the lightly doped layer. A drain region of the first type is formed in the lightly doped layer, the drain region being more doped than the lightly doped layer. A drift region of the lightly doped layer is further provided disposed between the body region and the drain region. Additionally, a gate electrode is provided surrounding the drain region. The gate electrode is partially disposed over a thin oxide and partially over a thick oxide, wherein the gate electrode extended over the thick oxide from the thin oxide controls the electric field in the drift region to increase the avalanche breakdown of the drain region.
    • 提供一种晶体管器件,包括第一类型的半导体材料的轻掺杂层和第二类半导体材料的体区。 第一类型的源区域形成在身体区域中。 源极区域比轻掺杂层更加掺杂。 第一类型的漏极区形成在轻掺杂层中,漏区比轻掺杂层更加掺杂。 进一步提供轻体掺杂层的漂移区域,设置在体区和漏区之间。 此外,围绕漏极区域设置栅电极。 栅电极部分地设置在薄氧化物上并且部分地设置在厚氧化物上,其中从薄氧化物延伸到厚氧化物上的栅极电极控制漂移区域中的电场,以增加漏极区域的雪崩击穿。