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1. 发明申请

US20070090454A1 Transistor device 失效
标题翻译：晶体管器件
公开(公告)号：US20070090454A1
公开(公告)日：2007-04-26
申请号：US11259335
申请日：2005-10-26
申请人： Chin Huang , Jeffrey Hintzman , Dennis Schloeman , Hang Liao
发明人： Chin Huang , Jeffrey Hintzman , Dennis Schloeman , Hang Liao
IPC分类号： H01L29/76
CPC分类号： H01L29/402 , H01L29/0696 , H01L29/42368 , H01L29/4238 , H01L29/66681 , H01L29/7816 , H01L29/7823
摘要： A transistor device is provided, including a lightly doped layer of semiconductor material of a first type and a body region of semiconductor material of a second type. A source region of the first type is formed in the body region. The source region being more doped than the lightly doped layer. A drain region of the first type is formed in the lightly doped layer, the drain region being more doped than the lightly doped layer. A drift region of the lightly doped layer is further provided disposed between the body region and the drain region. Additionally, a gate electrode is provided surrounding the drain region. The gate electrode is partially disposed over a thin oxide and partially over a thick oxide, wherein the gate electrode extended over the thick oxide from the thin oxide controls the electric field in the drift region to increase the avalanche breakdown of the drain region.
摘要翻译：提供一种晶体管器件，包括第一类型的半导体材料的轻掺杂层和第二类半导体材料的体区。第一类型的源区域形成在身体区域中。源极区域比轻掺杂层更加掺杂。第一类型的漏极区形成在轻掺杂层中，漏区比轻掺杂层更加掺杂。进一步提供轻体掺杂层的漂移区域，设置在体区和漏区之间。此外，围绕漏极区域设置栅电极。栅电极部分地设置在薄氧化物上并且部分地设置在厚氧化物上，其中从薄氧化物延伸到厚氧化物上的栅极电极控制漂移区域中的电场，以增加漏极区域的雪崩击穿。

2. 发明申请

US20070010052A1 Creating high voltage fets with low voltage process 有权
标题翻译：用低电压工艺制造高压电源
公开(公告)号：US20070010052A1
公开(公告)日：2007-01-11
申请号：US11176033
申请日：2005-07-06
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。第一导电阱形成在有源区的至少一部分中，其中第一导电阱形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。形成在有源区域的至少一部分上的沟道截止区域I s，其中沟道阻挡区域形成为具有作为HV-第二导电FET的第二导电漂移部分的能力。

3. 发明申请

US20060010897A1 Air conditioner having water draining device 失效
公开(公告)号：US20060010897A1
公开(公告)日：2006-01-19
申请号：US10890744
申请日：2004-07-13
申请人： Chin Huang
发明人： Chin Huang
IPC分类号： F25B47/00
CPC分类号： F24F1/42 , F24F13/222 , F24F2013/225
摘要： An air conditioner includes an outdoor device coupled to an indoor device via a hose, and a water draining device coupled between the outdoor device and the indoor device, to force water that may be generated in the indoor device from the indoor device to the outdoor device, and to prevent the water from dropping from the indoor device. The water draining device includes a casing having a channel to slidably receive a piston which may pump the water from the indoor device to the outdoor device. The indoor device includes a tray disposed in a container to collect water. The outdoor device includes a fan device to blow and to dry the water.

4. 发明授权

US07491595B2 Creating high voltage FETs with low voltage process 有权
标题翻译：用低压工艺制造高压FET
公开(公告)号：US07491595B2
公开(公告)日：2009-02-17
申请号：US11176033
申请日：2005-07-06
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region is formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。第一导电阱形成在有源区的至少一部分中，其中第一导电阱形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。在有源区域的至少一部分中形成沟道阻挡区域，其中沟道阻挡区域被形成为具有作为HV-第二导电FET的第二导电漂移部分工作的能力。

5. 发明申请

US20060272346A1 Air conditioner having water draining device 失效
标题翻译：空调具有排水装置
公开(公告)号：US20060272346A1
公开(公告)日：2006-12-07
申请号：US11147132
申请日：2005-06-07
申请人： Chin Huang
发明人： Chin Huang
IPC分类号： F25D21/14
CPC分类号： F24F1/36 , F24F1/06 , F24F13/222
摘要： An air conditioner includes an indoor device having a water draining hose for receiving water generated in the indoor device, an outdoor device having a fan device spindle, and a water draining device coupled to the spindle of the fan device, and coupled to the hose of the indoor device, to draw the water out of the indoor device, and to prevent the water from dropping from the indoor device. The water draining device includes a housing having a cap which includes an inlet coupled to the hose of the indoor device, and an outlet for discharging the water. The housing includes two check valves to control the water to flow from the hose of the indoor device into the cap, and then to flow out through the outlet of the cap.
摘要翻译：一种空调装置，具有：室内机，具有用于接收在室内装置中产生的水的排水软管，具有风扇装置主轴的室外机，以及与风扇装置的主轴连接的排水装置，室内装置，将水从室内装置中抽出，防止水从室内装置落下。排水装置包括具有盖的壳体，该盖包括连接到室内装置的软管的入口和用于排放水的出口。壳体包括两个止回阀，以控制水从室内装置的软管流入盖中，然后通过盖的出口流出。

6. 发明申请

US20090130812A1 Creating High Voltage FETs with Low Voltage Process 有权
标题翻译：创建具有低电压工艺的高压FET
公开(公告)号：US20090130812A1
公开(公告)日：2009-05-21
申请号：US12350102
申请日：2009-01-07
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8234
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity− drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity− drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。在有源区的至少一部分中形成第一导电阱，其中第一导电阱被形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。形成在有源区域的至少一部分中的沟道停止区域I s，其中沟道阻挡区域形成为具有作为HV-第二导电FET的第二导电漂移部分的能力。

7. 发明申请

US20070141234A1 Method of fabricating organic light emitting diode array 失效
标题翻译：制造有机发光二极管阵列的方法
公开(公告)号：US20070141234A1
公开(公告)日：2007-06-21
申请号：US11304561
申请日：2005-12-16
申请人： Jungwei Cheng , Jeng-Rong Ho , Tzu-Yang Peng , Nan-Yi Wu , Chin Huang
发明人： Jungwei Cheng , Jeng-Rong Ho , Tzu-Yang Peng , Nan-Yi Wu , Chin Huang
IPC分类号： B05D5/06 , B05D3/12
CPC分类号： H01L27/3246 , H01L27/3211 , H01L27/3283 , H01L51/0003 , Y10S428/917
摘要： The present invention discloses a method of fabricating organic light emitting diode array, which adopts a directional spin coating technology to grow different organic light-emitting materials on the same plane so as to control the color of the emitted light and accomplish monochrome or full color organic light emitting diodes.
摘要翻译：本发明公开了一种制造有机发光二极管阵列的方法，其采用定向旋涂技术，在同一平面上生长不同的有机发光材料，以控制发射光的颜色，并实现单色或全色有机发光二极管。

8. 发明申请

US20060120817A1 Machine tool having inbuilt water supplier 失效
标题翻译：机床内置供水机
公开(公告)号：US20060120817A1
公开(公告)日：2006-06-08
申请号：US11190558
申请日：2005-07-28
申请人： Chin Huang
发明人： Chin Huang
IPC分类号： B23Q11/00
CPC分类号： B23Q11/1084 , Y10T408/44 , Y10T409/304032 , Y10T409/304088 , Y10T409/309464
摘要： A machine tool includes a base having a spindle rotatably attached to a support for supporting a tool member, and a fluid supplying device for supplying fluid into the spindle, for cooling purposes. The fluid supplying device includes a housing secured to the support for rotatably receiving the spindle, a casing is secured to the housing and has a channel for communicating with the conduit of the housing, and a membrane is secured between the housing and the casing and disposed between the bore of the housing and a space of the casing for pumping the fluid from the space to the channel of the casing. A check valve is disposed in the casing and has a spring member for biasing a ball to selectively block or open a passage of the casing.
摘要翻译：一种机床包括具有可旋转地连接到用于支撑工具构件的支撑件的主轴的基座，以及用于为了冷却目的将流体供应到主轴中的流体供应装置。流体供应装置包括固定到支撑件上的壳体，用于可旋转地容纳主轴，壳体固定到壳体并且具有用于与壳体的导管连通的通道，并且膜固定在壳体和壳体之间并且被设置在壳体的孔和壳体的空间之间，用于将流体从空间泵送到壳体的通道。止回阀设置在壳体中并且具有用于偏压球的弹簧构件，以选择性地阻挡或打开壳体的通道。

9. 发明授权

US07704819B2 Creating high voltage FETs with low voltage process 有权
标题翻译：用低压工艺制造高压FET
公开(公告)号：US07704819B2
公开(公告)日：2010-04-27
申请号：US12350102
申请日：2009-01-07
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity− drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。第一导电阱形成在有源区的至少一部分中，其中第一导电阱形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。形成在有源区域的至少一部分中的沟道停止区域I s，其中沟道阻挡区域形成为具有作为HV-第二导电FET的第二导电漂移部分的能力。

10. 发明授权

US07182286B2 Cable winder apparatus 失效
标题翻译：电缆卷绕机
公开(公告)号：US07182286B2
公开(公告)日：2007-02-27
申请号：US11022669
申请日：2004-12-28
申请人： Chin Huang
发明人： Chin Huang
IPC分类号： B65H75/48
CPC分类号： B65H75/4434 , H02G11/02 , H04M1/15
摘要： A cable winder apparatus includes a casing, a winding tray, a spiral spring, a cable set, and a clamping unit. The casing has an accommodating space defined therein, a shaft in the accommodating space and two cutouts on two ends of the casing. The winding tray is pivotally connected to the shaft and has an inner wheel on one end thereof. The spiral spring is arranged in the winding tray and has one end connected to the winding tray and another end connected to the shaft. The cable set is wrapped around outer peripheral of the winding tray and composed of two stacked cables. The clamping unit is arranged in the accommodating space and has an outer wheel rotatably engaged with the inner wheel of the winding tray. The cables of the cable set can be easily pulled out and received by the cable winder apparatus.
摘要翻译：电缆卷绕装置包括壳体，卷绕盘，螺旋弹簧，电缆组和夹紧单元。壳体具有限定在其中的容纳空间，容纳空间中的轴和壳体两端的两个切口。卷绕托盘枢转地连接到轴，并且其一端具有内轮。螺旋弹簧布置在卷绕托盘中，并且一端连接到卷绕托盘，另一端连接到轴。电缆组缠绕在卷绕托架的外周边，由两根堆叠的电缆组成。夹紧单元布置在容纳空间中，并且具有与卷绕托盘的内轮可旋转地接合的外轮。电缆组件的电缆可以容易地被电缆卷绕装置拉出并被接收。

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