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    • 1. 发明授权
    • Semiconductor device comprising flash memory and address mapping method
    • 包括闪速存储器和地址映射方法的半导体器件
    • US08239616B2
    • 2012-08-07
    • US12629268
    • 2009-12-02
    • Han-bin YoonYoung-goo KoJung-been ImHwan-jin YongChang-Hee Lee
    • Han-bin YoonYoung-goo KoJung-been ImHwan-jin YongChang-Hee Lee
    • G06F12/00
    • G06F12/0246G06F2212/7201
    • A semiconductor device with flash memory includes; a log type determining unit configured to select log type from among a plurality of log types with respect to a log block storing program data requested to be programmed in the flash memory and generate a control signal indicating information indicating the selected log type, and a plurality of log units configured to store program data in the log block having a corresponding log type in response to the control signal, wherein the log type determining unit converts a first type log block formed by a first log type and included in a first type log unit from among the plurality of log units into second type log block formed by a second log type and converts the log block included in a second type log unit from among the plurality of log units into the first type log blocks, the first log type being different from the second log type.
    • 具有闪存的半导体器件包括: 日志类型确定单元,被配置为相对于存储请求在闪存中编程的程序数据的日志块从多个日志类型中选择日志类型,并生成指示指示所选择的日志类型的信息的控制信号,以及多个 配置为响应于控制信号将程序数据存储在具有对应日志类型的日志块中的日志单元,其中日志类型确定单元将由第一日志类型形成并包括在第一类型日志单元中的第一类型日志块 从所述多个日志单元中,将所述多个日志单元中的所述日志块从所述多个日志单元中变换为由所述第一日志单元形成的第二类型日志块,并将所述第二类型日志单元中包含的所述日志块转换为所述第一类型日志块, 从第二个日志类型。