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    • 7. 发明申请
    • Clock frequency doubler method and apparatus for serial flash testing
    • 用于串行闪存测试的时钟倍频器方法和装置
    • US20080080276A1
    • 2008-04-03
    • US11526124
    • 2006-09-22
    • Tien-Ler LinKwangho KimHui ChenEungjoon Park
    • Tien-Ler LinKwangho KimHui ChenEungjoon Park
    • G11C16/06G11C29/00G11C7/00G11C11/34
    • G11C29/14G11C7/22G11C7/222G11C29/12015
    • Method and apparatus for memory device testing at a higher clock rate than the clock rate provided by a memory tester. The method includes providing a memory tester capable of generating a first clock signal characterized by a first clock frequency, and applying the first clock signal to the memory device. The method also includes receiving a command for activating a high-clock-frequency test mode. The method generates a second clock signal in the memory device in response to the first clock signal. The second clock signal is characterized by a second clock frequency which is higher than the first clock frequency. The method then tests the memory device at the second clock frequency. In a specific embodiment, the method is applied to a serial flash memory device. The invention can also be applied to testing and operating other memory devices or systems that include synchronized circuits.
    • 用于以比由存储器测试器提供的时钟速率更高的时钟速率测试存储器件的方法和装置。 该方法包括提供能够产生以第一时钟频率为特征的第一时钟信号并将第一时钟信号施加到存储器件的存储器测试器。 该方法还包括接收用于激活高时钟频率测试模式的命令。 该方法响应于第一时钟信号在存储器件中产生第二时钟信号。 第二时钟信号的特征在于高于第一时钟频率的第二时钟频率。 然后该方法以第二个时钟频率测试存储器件。 在具体实施例中,该方法被应用于串行闪存设备。 本发明还可以应用于测试和操作包括同步电路的其它存储器件或系统。
    • 10. 发明授权
    • Clock frequency doubler method and apparatus for serial flash testing
    • 用于串行闪存测试的时钟倍频器方法和装置
    • US07502267B2
    • 2009-03-10
    • US11526124
    • 2006-09-22
    • Tien-Ler LinKwangho KimHui ChenEungjoon Park
    • Tien-Ler LinKwangho KimHui ChenEungjoon Park
    • G11C7/00G11C11/34G11C8/00
    • G11C29/14G11C7/22G11C7/222G11C29/12015
    • Method and apparatus for memory device testing at a higher clock rate than the clock rate provided by a memory tester. The method includes providing a memory tester capable of generating a first clock signal characterized by a first clock frequency, and applying the first clock signal to the memory device. The method also includes receiving a command for activating a high-clock-frequency test mode. The method generates a second clock signal in the memory device in response to the first clock signal. The second clock signal is characterized by a second clock frequency which is higher than the first clock frequency. The method then tests the memory device at the second clock frequency. In a specific embodiment, the method is applied to a serial flash memory device. The invention can also be applied to testing and operating other memory devices or systems that include synchronized circuits.
    • 用于以比由存储器测试器提供的时钟速率更高的时钟速率测试存储器件的方法和装置。 该方法包括提供能够产生以第一时钟频率为特征的第一时钟信号并将第一时钟信号施加到存储器件的存储器测试器。 该方法还包括接收用于激活高时钟频率测试模式的命令。 该方法响应于第一时钟信号在存储器件中产生第二时钟信号。 第二时钟信号的特征在于高于第一时钟频率的第二时钟频率。 然后该方法以第二个时钟频率测试存储器件。 在具体实施例中,该方法被应用于串行闪存设备。 本发明还可以应用于测试和操作包括同步电路的其它存储器件或系统。