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1. 发明申请

US20120205786A1 METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于在半导体衬底上重新制造抗反射涂层的方法和结构
公开(公告)号：US20120205786A1
公开(公告)日：2012-08-16
申请号：US13455505
申请日：2012-04-25
申请人： Hakeem Akinmade-Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
发明人： Hakeem Akinmade-Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
IPC分类号： H01L23/28
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
摘要翻译：一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案，并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。

2. 发明授权

US08835307B2 Method and structure for reworking antireflective coating over semiconductor substrate 有权
标题翻译：在半导体衬底上重新加工抗反射涂层的方法和结构
公开(公告)号：US08835307B2
公开(公告)日：2014-09-16
申请号：US13468232
申请日：2012-05-10
申请人： Hakeem Akinmade-Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
发明人： Hakeem Akinmade-Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
IPC分类号： H01L33/44 , H01L21/311 , H01L21/027 , G03F7/42 , G03F7/09 , H01L51/00
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
摘要翻译：一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案，并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。

3. 发明授权

US08288271B2 Method for reworking antireflective coating over semiconductor substrate 有权
标题翻译：在半导体衬底上重新制造抗反射涂层的方法
公开(公告)号：US08288271B2
公开(公告)日：2012-10-16
申请号：US12610679
申请日：2009-11-02
申请人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
发明人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
IPC分类号： H01L33/44 , H01L51/00
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
摘要翻译：一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案，并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。

4. 发明申请

US20110101507A1 METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于在半导体衬底上重新制造抗反射涂层的方法和结构
公开(公告)号：US20110101507A1
公开(公告)日：2011-05-05
申请号：US12610679
申请日：2009-11-02
申请人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
发明人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
IPC分类号： H01L23/28 , H01L21/312
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
摘要翻译：一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案，并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。

5. 发明申请

US20120231554A1 METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE 有权
公开(公告)号：US20120231554A1
公开(公告)日：2012-09-13
申请号：US13468232
申请日：2012-05-10
申请人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
发明人： Hakeem Akinmade Yusuff , John A. Fitzsimmons , Ranee Wai-Ling Kwong
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.

6. 发明授权

US08796150B2 Bilayer trench first hardmask structure and process for reduced defectivity 有权
标题翻译：双层沟槽第一硬掩模结构和减少缺陷的过程
公开(公告)号：US08796150B2
公开(公告)日：2014-08-05
申请号：US13012166
申请日：2011-01-24
申请人： Hakeem B. S. Akinmade-Yusuff , Samuel Sung Shik Choi , Edward R. Engbrecht , John A. Fitzsimmons
发明人： Hakeem B. S. Akinmade-Yusuff , Samuel Sung Shik Choi , Edward R. Engbrecht , John A. Fitzsimmons
IPC分类号： H01L21/311 , H01L21/32 , H01L29/06
CPC分类号： H01L21/31144 , H01L21/76804 , H01L21/76807
摘要： A method and structure for transferring a lithographic pattern into a substrate includes forming a dielectric hardmask layer over a dielectric substrate. A metal hardmask layer is formed over the dielectric hardmask layer. A protective capping hardmask layer or capping film is formed over the metal hardmask layer, and a lithographic structure for pattern transfer is formed over the capping layer. A pattern is transferred into the dielectric substrate using the defined lithographic structure. The capping hardmask layer can be removed during subsequent processing.
摘要翻译：用于将光刻图案转印到基板中的方法和结构包括在电介质基底上形成电介质硬掩模层。在介电硬掩模层上形成金属硬掩模层。在金属硬掩模层上形成保护性覆盖硬掩模层或覆盖膜，并且在覆盖层上形成用于图案转印的光刻结构。使用限定的光刻结构将图案转移到电介质基板中。在后续处理过程中，可以移除加盖硬掩模层。

7. 发明申请

US20130334691A1 SIDEWALLS OF ELECTROPLATED COPPER INTERCONNECTS 有权
标题翻译：电镀铜互连的边界
公开(公告)号：US20130334691A1
公开(公告)日：2013-12-19
申请号：US13525823
申请日：2012-06-18
申请人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
发明人： Mukta G. Farooq , John A. Fitzsimmons , Troy L. Graves-Abe
IPC分类号： H01L23/52 , H01L21/283
CPC分类号： H05K3/423 , H01L21/76844 , H01L21/76846 , H01L21/76858 , H01L21/76898 , H01L23/481 , H01L23/53209 , H01L23/53214 , H01L23/53238 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , Y10T428/12764 , H01L2924/00
摘要： A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure including a diffusion barrier covering the sidewall and a fill composed of conductive material. The structure including a first intermetallic compound separating the diffusion barrier from the conductive material, the first intermetallic compound comprises an alloying material and the conductive material, and is mechanically bound to the conductive material, the alloying material is at least one of the materials selected from the group of chromium, tin, nickel, magnesium, cobalt, aluminum, manganese, titanium, zirconium, indium, palladium, and silver; and a first high friction interface located between the diffusion barrier and the first intermetallic compound and parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the diffusion barrier and the first intermetallic compound.
摘要翻译：一种形成在开口中的结构，其具有由非金属材料限定的基本上垂直的侧壁，并且具有由导电垫限定的基本上水平的底部，该结构包括覆盖侧壁的扩散阻挡层和由导电材料构成的填充物。所述结构包括将所述扩散阻挡物与所述导电材料分离的第一金属间化合物，所述第一金属间化合物包括合金材料和所述导电材料，并且机械地结合到所述导电材料上，所述合金材料是选自以下的至少一种材料：铬，锡，镍，镁，钴，铝，锰，钛，锆，铟，钯和银的组合; 以及位于所述扩散阻挡层和所述第一金属间化合物之间且平行于所述开口的侧壁的第一高摩擦界面，其中所述第一高摩擦界面导致所述扩散阻挡层和所述第一金属间化合物之间的机械结合。

8. 发明申请

US20110193199A1 ELECTROMIGRATION IMMUNE THROUGH-SUBSTRATE VIAS 有权
标题翻译：电磁辐射穿过基底VIAS
公开(公告)号：US20110193199A1
公开(公告)日：2011-08-11
申请号：US12702463
申请日：2010-02-09
申请人： Ronald G. Filippi , John A. Fitzsimmons , Kevin Kolvenbach , Ping-Chuan Wang
发明人： Ronald G. Filippi , John A. Fitzsimmons , Kevin Kolvenbach , Ping-Chuan Wang
IPC分类号： H01L23/48 , H01L21/50
CPC分类号： H01L25/0657 , H01L21/76898 , H01L24/13 , H01L24/16 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/9202 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/00 , H01L2224/05552
摘要： A through-substrate via (TSV) structure includes at least two electrically conductive via segments embedded in a substrate and separated from each other by an electrically conductive barrier layer therebetween. The length of each individual conductive via segment is typically equal to, or less than, the Blech length of the conductive material so that the stress-induced back flow force, generated by each conductive barrier layer, cancels the electromigration force in each conductive via segment. Consequently, the TSV structures are immune to electromigration, and provide reliable electrical connections among a chips stacked in 3 dimensions.
摘要翻译：贯穿衬底通孔（TSV）结构包括至少两个嵌入衬底中的导电通路段，并且通过它们之间的导电阻挡层彼此分离。每个单独的导电通路段的长度通常等于或小于导电材料的漂浮长度，使得由每个导电阻挡层产生的应力引起的后向流动力抵消每个导电通路段中的电迁移力。因此，TSV结构免于电迁移，并且在三维堆叠的芯片之间提供可靠的电连接。

9. 发明授权

US07892940B2 Device and methodology for reducing effective dielectric constant in semiconductor devices 有权
标题翻译：用于降低半导体器件中有效介电常数的器件和方法
公开(公告)号：US07892940B2
公开(公告)日：2011-02-22
申请号：US11851123
申请日：2007-09-06
申请人： Daniel C. Edelstein , Matthew E. Colburn , Edward C. Cooney, III , Timothy J. Dalton , John A. Fitzsimmons , Jeffrey P. Gambino , Elbert E. Huang , Michael W. Lane , Vincent J. McGahay , Lee M. Nicholson , Satyanarayana V. Nitta , Sampath Purushothaman , Sujatha Sankaran , Thomas M. Shaw , Andrew H. Simon , Anthony K. Stamper
发明人： Daniel C. Edelstein , Matthew E. Colburn , Edward C. Cooney, III , Timothy J. Dalton , John A. Fitzsimmons , Jeffrey P. Gambino , Elbert E. Huang , Michael W. Lane , Vincent J. McGahay , Lee M. Nicholson , Satyanarayana V. Nitta , Sampath Purushothaman , Sujatha Sankaran , Thomas M. Shaw , Andrew H. Simon , Anthony K. Stamper
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , H01L21/0332 , H01L21/31111 , H01L21/31144 , H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , Y10S438/947 , H01L2924/00
摘要： Method of manufacturing a structure which includes the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
摘要翻译：一种制造结构的方法，包括以下步骤：提供具有至少一个互连的绝缘体层的结构，在绝缘体层上形成次级光刻模板掩模，以及通过次级光刻模板掩模选择性地蚀刻绝缘体层以形成次光刻特征跨越至少一个互连的侧壁。

10. 发明申请

US20100301475A1 Forming Semiconductor Chip Connections 有权
标题翻译：形成半导体芯片连接
公开(公告)号：US20100301475A1
公开(公告)日：2010-12-02
申请号：US12471656
申请日：2009-05-26
申请人： Louis Lu-Chen Hsu , Kangguo Cheng , Timothy J. Dalton , Mukta G. Farooq , John A. Fitzsimmons
发明人： Louis Lu-Chen Hsu , Kangguo Cheng , Timothy J. Dalton , Mukta G. Farooq , John A. Fitzsimmons
IPC分类号： H01L23/498 , H01L21/50
CPC分类号： H01L24/14 , H01L21/6836 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L25/0652 , H01L25/0657 , H01L27/0207 , H01L29/0657 , H01L2224/0401 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/06183 , H01L2224/13009 , H01L2224/13099 , H01L2224/131 , H01L2224/14183 , H01L2224/16 , H01L2224/16105 , H01L2224/16137 , H01L2224/16147 , H01L2224/81205 , H01L2224/81801 , H01L2225/06513 , H01L2225/06524 , H01L2225/06551 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Systems and methods are disclosed that enable forming semiconductor chip connections. In one embodiment, the semiconductor chip includes a body having a polyhedron shape with a pair of opposing sides; and a solder member extending along a side that extends between the pair of opposing sides of the polyhedron shape.
摘要翻译：公开了能够形成半导体芯片连接的系统和方法。在一个实施例中，半导体芯片包括具有一对相对侧面的多面体形状的主体; 以及沿着在多面体形状的一对相对侧之间延伸的一侧延伸的焊料构件。

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