会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • METHOD AND APPARATUS FOR MANAGING DIGITAL CONTENT
    • 管理数字内容的方法和设备
    • US20080201782A1
    • 2008-08-21
    • US12014486
    • 2008-01-15
    • Ju-hee SEOMyung-sun KIMHak-soo JUJi-young MOONMi-hwa PARK
    • Ju-hee SEOMyung-sun KIMHak-soo JUJi-young MOONMi-hwa PARK
    • G06F21/00
    • G06F21/10G06F2221/0742G06F2221/2137
    • A method and apparatus for managing digital content are provided. The apparatus for managing digital content generated by applying digital rights management (DRM) includes: a content execution unit executing digital content; and a control unit confirming whether or not digital content is in a first period in which the digital content can be normally executed, and controlling the content execution unit so that, if the digital content is in the first period, the digital content can be executed normally, and if the digital content is in a second period which is not in the first period, the digital content can be executed in a manner which can be distinguished from that of execution in the first period. According to the apparatus and method, execution of digital content, which is close to expiration, can be controlled, thereby managing the expiration of the digital content for a user.
    • 提供了一种用于管理数字内容的方法和装置。 用于管理通过应用数字版权管理(DRM)生成的数字内容的装置包括:执行数字内容的内容执行单元; 以及控制单元,确认数字内容是否处于能够正常执行数字内容的第一时段,并且控制内容执行单元,使得如果数字内容处于第一时段,则可以执行数字内容 正常情况下,如果数字内容处于不在第一周期的第二周期,则可以以与第一周期中执行的数字内容不同的方式执行数字内容。 根据该装置和方法,可以控制接近到期的数字内容的执行,从而管理用户的数字内容的到期。
    • 4. 发明申请
    • METHOD OF AUTHENTICATING AND REPRODUCING CONTENT USING PUBLIC BROADCAST ENCRYPTION AND APPARATUS THEREFOR
    • 使用公共广播加密的认证和复制内容的方法及其设备
    • US20090016537A1
    • 2009-01-15
    • US12048656
    • 2008-03-14
    • Hak-soo JUMyung-sun KIMJi-young MOON
    • Hak-soo JUMyung-sun KIMJi-young MOON
    • H04L9/08
    • H04N21/25816H04H60/15H04H60/23H04L9/0825H04L9/3228H04L2209/601H04N21/43615H04N21/4367H04N21/4405H04N21/4408
    • Provided are a method and apparatus for mutually authenticating devices in a group and reproducing content using public broadcast encryption. The method of authenticating a first device and a second device includes acquiring specific information of the second device from the second device, transmitting data, containing the acquired specific information of the second device and specific information of the first device, by encrypting the data using a broadcast public key of a group to which the second device belongs, and determining whether authentication of the first device succeeds by decrypting the encrypted data by using a private key of the second device. If authentication succeeds, receiving the specific information of the first device, which is encrypted by using a temporary common key by using the decrypted data, and authenticating the second device by decrypting the encrypted specific information of the first device by using the temporary common key.
    • 提供了一种用于相互认证组中的设备并且使用公共广播加密来再现内容的方法和装置。 认证第一设备和第二设备的方法包括从第二设备获取第二设备的特定信息,通过使用以下方式加密数据来发送包含所获取的第二设备的特定信息和第一设备的特定信息的数据 第二设备所属的组的广播公开密钥,并且通过使用第二设备的私钥来解密加密数据来确定第一设备的认证是否成功。 如果认证成功,则通过使用解密的数据接收通过使用临时公共密钥加密的第一设备的特定信息,并且通过使用临时公共密钥解密第一设备的加密的特定信息来认证第二设备。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BARRIER REGION AND METHOD OF FABRICATING THE SAME
    • 包括扩展障碍区域的半导体器件及其制造方法
    • US20080121992A1
    • 2008-05-29
    • US11835551
    • 2007-08-08
    • Ji-hye YIHwa-sung RHEETetsuji UENOHo LEEMyung-sun KIM
    • Ji-hye YIHwa-sung RHEETetsuji UENOHo LEEMyung-sun KIM
    • H01L27/092H01L21/8238
    • H01L21/823814H01L21/823807
    • A semiconductor device includes a substrate having an n-type transistor region and a p-type transistor region. The n-type transistor region includes a first gate electrode, first source/drain regions located adjacent to the first gate electrode, a first channel region located between the first source/drain regions, and a first diffusion barrier region located in the first source/drain regions or in both the first channel region and the first source/drain regions. The p-type transistor region includes a second gate electrode, second source/drain regions located adjacent to the second gate electrode, a second channel region located between the second source/drain regions, and a second diffusion barrier region located in the second source/drain regions or in both the second channel region and the second source/drain regions.
    • 半导体器件包括具有n型晶体管区域和p型晶体管区域的衬底。 n型晶体管区域包括第一栅极电极,位于第一栅极电极附近的第一源极/漏极区域,位于第一源极/漏极区域之间的第一沟道区域和位于第一源极/漏极区域中的第一扩散阻挡区域, 漏极区域或者在第一沟道区域和第一源极/漏极区域两者中。 p型晶体管区域包括第二栅极电极,位于第二栅极电极附近的第二源极/漏极区域,位于第二源极/漏极区域之间的第二沟道区域和位于第二源极/漏极区域中的第二扩散阻挡区域, 漏极区域或者在第二沟道区域和第二源极/漏极区域中。