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    • 3. 发明授权
    • Insulated type switchgear device
    • 绝缘式开关柜
    • US6005213A
    • 1999-12-21
    • US28640
    • 1998-02-24
    • Ayumu MoritaTakashi SatoYouichi OhshitaTooru TanimizuMasayoshi HayakawaToshio HorikoshiRyutaro Yamamoto
    • Ayumu MoritaTakashi SatoYouichi OhshitaTooru TanimizuMasayoshi HayakawaToshio HorikoshiRyutaro Yamamoto
    • H01H33/66H01H31/00H01H33/664
    • H01H33/664H01H2033/6668H01H31/003H01H33/66207H01H33/6661H01H33/6664
    • In an insulated type switchgear device in which a pair of arc electrodes are separably disposed in an opposing manner in a vacuum tube, and having a movable conductor extending from a back face of a movable one of the arc electrodes to the outside of the vacuum tube, the pair of arc electrodes are designed to be separated through a rotation of the movable conductor around a predetermined main axis. The movable arc electrode is structured in such a manner that an electrode center of the movable arc electrode, when the movable arc electrode is brought into its circuit breaking position, is to be located near a center axis of the stationary arc electrode, whereby the center of the movable arc electrode is offset from the center axis of the stationary arc electrode when the pair of arc electrodes are brought into their circuit making position, and whereby an insulation type switchgear device is provided which suppresses a possible offsetting of arc electrodes at a circuit breaking position thereof, improves circuit breaking performance thereof, and permits downsizing thereof.
    • 在一种绝缘型开关装置中,其中一对电弧电极以相对的方式可分离地设置在真空管中,并且具有从可动的一个电弧电极的背面延伸到真空管的外部的可动导体 一对电弧电极被设计成通过可移动导体围绕预定的主轴线的旋转分开。 可动电弧电极的结构使得当可动电弧电极进入其断路位置时,可动电弧电极的电极中心位于固定电弧电极的中心轴附近,由此中心 当一对电弧电极进入其电路制造位置时,可动电弧电极的距离偏离固定电弧电极的中心轴线,由此提供了一种绝缘型开关装置,其抑制了电路中的电弧电极的可能的偏移 断开位置,提高断路性能,并且能够实现小型化。
    • 7. 发明授权
    • High frequency plasma generation apparatus
    • 高频等离子体发生装置
    • US4716491A
    • 1987-12-29
    • US806341
    • 1985-12-09
    • Yasunori OhnoTomoe KurosawaTadashi SatoYouichi Ohshita
    • Yasunori OhnoTomoe KurosawaTadashi SatoYouichi Ohshita
    • H01J37/08H01J27/08H01J37/32H01L21/302H05H1/11H05H1/16
    • H01J37/321H01J37/32623H01J37/32688H05H1/11
    • In a high frequency plasma generation apparatus used in a reactive ion etching apparatus, an ion shower apparatus, a sputter apparatus, etc. for fabricating thin films or semiconductor devices for which a fine patterning process is required, electrical breakdown is apt to be provoked at the surface of a high frequency coil, because the high frequency coil is usually inserted in a plasma. In order to remove this drawback, according to this invention, the high frequency coil is disposed in the plasma production chamber at the neighborhood of the cylindrical side wall, and thus a plasma confinement domain is formed inside of this high frequency coil by use of a magnetic field production device which generates a multi-cusp magnetic field so that the plasma confinement domain is separated from the high frequency coil. In this way, electrical breakdown on the surface of the high frequency coil is prevented and thus the apparatus according to this invention can work stably for a long time.
    • 在用于反应离子蚀刻装置的高频等离子体发生装置中,用于制造需要精细图案化工艺的薄膜或半导体装置的离子淋浴装置,溅射装置等,易于在 高频线圈的表面,因为高频线圈通常插入等离子体中。 为了消除这个缺陷,根据本发明,高频线圈设置在等离子体生产室中,在圆筒形侧壁附近,因此通过使用高频线圈形成等离子体约束区域 磁场产生装置,其产生多尖点磁场,使得等离子体约束区域与高频线圈分离。 以这种方式,可以防止高频线圈表面的电击穿,从而本发明的装置可以长时间稳定工作。