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1. 发明授权

US4713585A Ion source 失效
标题翻译：离子源
公开(公告)号：US4713585A
公开(公告)日：1987-12-15
申请号：US911790
申请日：1986-09-26
申请人： Yasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Yukio Kurosawa , Yoshimi Hakamata
发明人： Yasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Yukio Kurosawa , Yoshimi Hakamata
IPC分类号： H01J27/08 , H01J27/14 , H01J27/18 , H01J37/08 , H01J7/24
CPC分类号： H01J27/14 , H01J27/18 , H01J37/08
摘要： An ion source for producing an ion beam utilized for fabrication and processing of semiconductors, thin films or the like includes a plasma producing chamber equipped with first magnetic means for limiting a plasma region and a plasma expansion chamber provided in combination with the plasma producing chamber on the side where a beam extracting electrode is disposed. The plasma expansion chamber is provided with second magnet array for confining and holding a plasma region therein which is of a larger area than that of the plasma region formed in the plasma producing chamber.
摘要翻译：用于制造用于半导体，薄膜等的制造和加工的离子束的离子源包括：等离子体产生室，其配备有用于限制等离子体区域的第一磁性装置和与等离子体产生室组合设置的等离子体膨胀室设置光束提取电极的一侧。等离子体膨胀室设置有第二磁体阵列，用于限制和保持其中等离子体区域的面积大于等离子体产生室中形成的等离子体区域的面积。

2. 发明授权

US5133825A Plasma generating apparatus 失效
标题翻译：等离子体发生装置
公开(公告)号：US5133825A
公开(公告)日：1992-07-28
申请号：US178613
申请日：1988-04-07
申请人： Yoshimi Hakamata , Ken-ichi Natsui , Yukio Kurosawa , Tadashi Sato , Hiroaki Kojima , Yasunori Ohno , Tomoe Kurosawa
发明人： Yoshimi Hakamata , Ken-ichi Natsui , Yukio Kurosawa , Tadashi Sato , Hiroaki Kojima , Yasunori Ohno , Tomoe Kurosawa
IPC分类号： H01J37/32
CPC分类号： H01J37/32357
摘要： An apparatus for generating plasma by making use of electron cyclotron resonance employs permanent magnets for forming magnetic fields, and the permanent magnets are arranged in such a manner as to form stronger magnetic fields in peripheral portion of a plasma chamber than in a central portion of the same. in addition, a cross-sectional area of the plasma chamber is gradually increased. Furthermore, electrons are introduced into an additional plasma chamber in which an electric field is not applied so as to generate low-temperature plasma.

3. 发明授权

US4851668A Ion source application device 失效
标题翻译：离子源应用装置
公开(公告)号：US4851668A
公开(公告)日：1989-07-25
申请号：US35031
申请日：1987-04-06
申请人： Tasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Yukio Kurosawa , Yoshimi Hakamata
发明人： Tasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Yukio Kurosawa , Yoshimi Hakamata
IPC分类号： C23C14/48 , C23F4/00 , G21K5/04 , H01J27/16 , H01J27/20 , H01J27/24 , H01J37/08 , H01J37/305 , H01J37/317
CPC分类号： H01J37/32009 , H01J27/16 , H01J27/20 , H01J27/24 , H01J37/08 , H01J2237/0041
摘要： An ion source application device comprising a gas tight plasma formation chamber sustaining a plasma produced by high frequency discharge, a high frequency coil producing the high frequency discharge, and means for extracting an ion beam from the plasma thus produced, characterized in that it comprises further an electron beam generator or a laser light generator as means for obtaining electrons serving as seeds for starting the high frequency discharge.
摘要翻译：一种离子源施加装置，其特征在于，包括：保持由高频放电产生的等离子体的气密等离子体形成室，产生高频放电的高频线圈，以及用于从由此产生的等离子体中提取离子束的装置，其特征在于，电子束发生器或激光发生器作为用于获得用于启动高频放电的种子的电子的装置。

4. 发明授权

US4847476A Ion source device 失效
标题翻译：离子源装置
公开(公告)号：US4847476A
公开(公告)日：1989-07-11
申请号：US942635
申请日：1986-12-17
申请人： Tadashi Sato , Yasunori Ohno , Tomoe Kurosawa , Nobuya Sekimoto , Yoshimi Hakamata , Yukio Kurosawa , Kunio Hirasawa
发明人： Tadashi Sato , Yasunori Ohno , Tomoe Kurosawa , Nobuya Sekimoto , Yoshimi Hakamata , Yukio Kurosawa , Kunio Hirasawa
IPC分类号： H01L21/265 , H01J27/08 , H01J27/14
CPC分类号： H01J27/14
摘要： An ion source device comprises a plasma generating vessel for generating plasma therein, a plurality of magnets arranged on an outer periphery of the plasma generating vessel to establish a cusp field in the plasma generating vessel, means for supplying a power to generate the plasma in the plasma generating vessel, and an anode electrode arranged on an inner wall of the plasma generating vessel and adapted to be heated by electrons emitted from the plasma and maintain the heat.
摘要翻译：离子源装置包括用于在其中产生等离子体的等离子体发生容器，布置在等离子体发生容器的外周上的多个磁体，以在等离子体发生容器中建立尖端场，用于在等离子体发生容器中提供电力以产生等离子体的装置等离子体发生容器和布置在等离子体发生容器的内壁上并适于被从等离子体发射的电子加热并保持热量的阳极电极。

5. 发明授权

US4767931A Ion beam apparatus 失效
标题翻译：离子束装置
公开(公告)号：US4767931A
公开(公告)日：1988-08-30
申请号：US942711
申请日：1986-12-17
申请人： Tadashi Sato , Tomoe Kurosawa , Shigetaka Fujiwara , Masaru Higaki
发明人： Tadashi Sato , Tomoe Kurosawa , Shigetaka Fujiwara , Masaru Higaki
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/32055 , H01J37/32623 , H01J37/32688 , H01J37/34
摘要： A thin film manufacturing and processing apparatus by using an ion beam comprises a plasma producing vessel for producing therein a plasma by ionizing a neutral gas, an electrode assembly for extracting ions in the form of an ion beam from the plasma, a vacuum container accomodating therein a target to be worked through irradiation of the ion beam, and permanent magnets disposed on the outer periphery of the plasma generating vessel which is formed of a nonmagnetic material and serves as an anode electrode. An ion beam of high uniformity and a large diameter can be obtained to allow manufacture and processing of large scale magnetic thin films and semiconductors with high precision.
摘要翻译：通过使用离子束的薄膜制造和处理装置包括：用于通过电离中性气体在其中制造等离子体的等离子体制造容器，用于从等离子体离子束形式提取离子的电极组件，容纳在其中的真空容器通过照射离子束进行加工的靶材，以及设置在由非磁性材料形成并用作阳极电极的等离子体发生容器的外周上的永磁体。可以获得高均匀性和大直径的离子束，从而可以高精度地制造和加工大规模的磁性薄膜和半导体。

6. 发明授权

US4716491A High frequency plasma generation apparatus 失效
标题翻译：高频等离子体发生装置
公开(公告)号：US4716491A
公开(公告)日：1987-12-29
申请号：US806341
申请日：1985-12-09
申请人： Yasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Youichi Ohshita
发明人： Yasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Youichi Ohshita
IPC分类号： H01J37/08 , H01J27/08 , H01J37/32 , H01L21/302 , H05H1/11 , H05H1/16
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32688 , H05H1/11
摘要： In a high frequency plasma generation apparatus used in a reactive ion etching apparatus, an ion shower apparatus, a sputter apparatus, etc. for fabricating thin films or semiconductor devices for which a fine patterning process is required, electrical breakdown is apt to be provoked at the surface of a high frequency coil, because the high frequency coil is usually inserted in a plasma. In order to remove this drawback, according to this invention, the high frequency coil is disposed in the plasma production chamber at the neighborhood of the cylindrical side wall, and thus a plasma confinement domain is formed inside of this high frequency coil by use of a magnetic field production device which generates a multi-cusp magnetic field so that the plasma confinement domain is separated from the high frequency coil. In this way, electrical breakdown on the surface of the high frequency coil is prevented and thus the apparatus according to this invention can work stably for a long time.
摘要翻译：在用于反应离子蚀刻装置的高频等离子体发生装置中，用于制造需要精细图案化工艺的薄膜或半导体装置的离子淋浴装置，溅射装置等，易于在高频线圈的表面，因为高频线圈通常插入等离子体中。为了消除这个缺陷，根据本发明，高频线圈设置在等离子体生产室中，在圆筒形侧壁附近，因此通过使用高频线圈形成等离子体约束区域磁场产生装置，其产生多尖点磁场，使得等离子体约束区域与高频线圈分离。以这种方式，可以防止高频线圈表面的电击穿，从而本发明的装置可以长时间稳定工作。

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