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1. 发明申请

WO2009117882A1 PULSE-LASER BONDING METHOD FOR THROUGH-SILICON-VIA BASED STACKING OF ELECTRONIC COMPONENTS 审中-公开
标题翻译：脉冲激光焊接方法，用于基于硅的电子组件的堆叠
公开(公告)号：WO2009117882A1
公开(公告)日：2009-10-01
申请号：PCT/CN2008/072293
申请日：2008-09-08
申请人： HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE CO. LTD , SHI, Xunqing , MA, Wei , XIE, Bin , CHUNG, Chang Hwa
发明人： SHI, Xunqing , MA, Wei , XIE, Bin , CHUNG, Chang Hwa
IPC分类号： H01L25/065 , H01L23/488
CPC分类号： H01L21/76898 , H01L21/6835 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/68359 , H01L2224/0401 , H01L2224/05166 , H01L2224/05171 , H01L2224/0557 , H01L2224/056 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2224/16 , H01L2224/274 , H01L2224/29101 , H01L2224/2919 , H01L2224/8182 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/351 , H01L2924/00 , H01L2224/05552 , H01L2924/00014 , H01L2924/013
摘要： There is described a method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components using pulsed laser energy. A hole is formed in each component, and each hole is fill ed with a plug formed of a first metal. One component is then stacked on another component such that the holes are in alignment, and a pulse of laser energy is applied to form a bond between the metal plugs.
摘要翻译：描述了形成穿硅通孔以形成使用脉冲激光能量的两个堆叠的半导体部件之间的互连的方法。在每个部件中形成孔，并且每个孔用由第一金属形成的塞子填充。然后将一个部件堆叠在另一部件上，使得孔对准，并且施加激光能量的脉冲以在金属插塞之间形成结合。

2. 发明申请

WO2010057339A1 SEMICONDUCTOR CHIP WITH THROUGH-SILICON-VIA AND SIDEWALL PAD 审中-公开
标题翻译：半导体芯片，通过硅和透明片
公开(公告)号：WO2010057339A1
公开(公告)日：2010-05-27
申请号：PCT/CN2008/073100
申请日：2008-11-19
申请人： HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE CO. LTD , SHI, Xunqing , XIE, Bin , CHUNG, Chang Hwa
发明人： SHI, Xunqing , XIE, Bin , CHUNG, Chang Hwa
IPC分类号： H01L25/065 , H01L23/049 , H01L23/053
CPC分类号： H01L23/16 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/06188 , H01L2224/16145 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2924/1433
摘要： Subject matter disclosed herein may re late to packaging for multi-chip semiconductor devices as may be used, fo r example, in flash memory devices. In an example embodiment, a semiconduc tor chip may comprise a through- silicon via and a sidewall pad.
摘要翻译：例如，在闪存设备中可以使用的用于多芯片半导体器件的封装可能会延迟到本文公开的主题。在示例性实施例中，半导体芯片可以包括硅通孔和侧壁衬垫。

3. 发明申请

WO2010111832A1 SUBSTRATE WARPAGE-REDUCING STRUCTURE 审中-公开
标题翻译：基板保温结构
公开(公告)号：WO2010111832A1
公开(公告)日：2010-10-07
申请号：PCT/CN2009/071115
申请日：2009-03-31
申请人： HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE CO. LTD , LIN, Jyh-Rong , XIE, Bin , YEUNG, Yeung , SHI, Xunqing , CHUNG, Chang Hwa
发明人： LIN, Jyh-Rong , XIE, Bin , YEUNG, Yeung , SHI, Xunqing , CHUNG, Chang Hwa
IPC分类号： H01L21/00 , B32B5/00
CPC分类号： H05K1/0271 , H05K1/0306 , H05K2201/068 , H05K2201/09136 , H05K2201/09909
摘要： A method to provide warpage control of a substrate and an apparatus designed to perform this method are disclosed The method comprises arranging a first surface-modifying material on a first surface of a substrate, wherein the first surface-modifying material has a first pattern comprising one or more thickness to control warpage of the substrate.
摘要翻译：公开了一种提供基板的翘曲控制的方法和设计用于执行该方法的装置。该方法包括在基板的第一表面上布置第一表面改性材料，其中第一表面改性材料具有包括一个的第一图案或更大的厚度以控制基底的翘曲。

4. 发明申请

WO2010111821A1 HOST SUBSTRATE FOR INTRIDE BASED LIGHT EMITTING DEVICES 审中-公开
标题翻译：用于基于内光的发光装置的主体基板
公开(公告)号：WO2010111821A1
公开(公告)日：2010-10-07
申请号：PCT/CN2009/071074
申请日：2009-03-30
申请人： HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE CO., LTD , LIN, Limin , XIE, Bin , YUAN, Shu
发明人： LIN, Limin , XIE, Bin , YUAN, Shu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/46
摘要： A host substrate and method of making a host substrate for nitride based thin-film semiconductor devices are provided. The method includes the steps of providing a silicon layer (100), etching a pattern of holes (102) in the silicon layer (100), plating the silicon layer (100) with copper (300) to fill the holes (102) formed in the silicon layer (100), bonding the silicon layer (100) to a gallium nitride (GaN) layer (500), the GaN layer (500) attached to a sapphire substrate (502). The host substrate is configured to address the coefficient of thermal expansion (CTE) mismatch problem and reduce the amount of stress resulting from such CTE mismatch. A combination of metal and semiconductor materials provide for the desired thermal and electrical conductivity while providing for subsequent dicing and incorporation of the finished semiconductor into other circuits.
摘要翻译：提供了一种主衬底和制造用于氮化物基薄膜半导体器件的主衬底的方法。该方法包括以下步骤：提供硅层（100），蚀刻硅层（100）中的孔（102）图案，用铜（300）电镀硅层（100）以填充所形成的孔（102）在硅层（100）中，将硅层（100）与氮化镓（GaN）层（500）接合，附着到蓝宝石衬底（502）的GaN层（500）。主机基板被配置为解决热膨胀系数（CTE）失配问题，并减少由这种CTE失配引起的应力的量。金属和半导体材料的组合提供期望的热导电性和导电性，同时提供随后的切割和将成品半导体结合到其它电路中。

5. 发明申请

WO2011157839A1 ORGANOTEMPLATE-FREE SYNTHETIC PROCESS FOR THE PRODUCTION OF A ZEOLITIC MATERIAL OF THE LEV-TYPE STRUCTURE 审中-公开
标题翻译：用于生产LEV型结构的沸石材料的无机合成方法
公开(公告)号：WO2011157839A1
公开(公告)日：2011-12-22
申请号：PCT/EP2011/060165
申请日：2011-06-17
申请人： BASF SE , YILMAZ, Bilge , MÜLLER, Ulrich , PFAFF, Meike , XIAO, Feng-Shou , XIE, Bin , ZHANG, Halyan
发明人： YILMAZ, Bilge , MÜLLER, Ulrich , PFAFF, Meike , XIAO, Feng-Shou , XIE, Bin , ZHANG, Halyan
IPC分类号： C01B37/02 , C01B39/46 , B01J29/70 , B01J29/72
CPC分类号： C01B39/02 , B01J20/186 , B01J20/28042 , B01J20/28057 , B01J20/3007 , B01J29/70 , C01B37/02 , C01B39/46
摘要： The present invention relates to an organotemplate-free synthetic process for the production of a zeolitic material having an LEV-type framework structure comprising YO 2 and optionally comprising X 2 O 3 , wherein said process comprises the steps of (1) preparing a mixture comprising seed crystals and one or more sources for YO 2 ; and (2) crystallizing the mixture obtained in step (1); wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises one or more alkali metals M, and wherein the seed crystals comprise zeolitic material having an LEV-type framework structure, and to a zeolitic material having an LEV-type framework structure obtainable by said process, as well as to an organotemplate-free zeolitic material having an LEV-type framework structure comprising YO 2 and optionally comprising X 2 O 3 , wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises one or more alkali metals M, wherein said zeolitic material is non-calcined.
摘要翻译：本发明涉及一种用于制备具有包含YO 2和任选地包含X 2 O 3的LEV型骨架结构的沸石材料的无机模板合成方法，其中所述方法包括以下步骤：（1）制备包含晶种和一种或更多来源的YO2; 和（2）使步骤（1）中获得的混合物结晶; 其中Y是四价元素，X是三价元素，其中所述沸石材料任选地包含一种或多种碱金属M，并且其中所述晶种包含具有LEV型骨架结构的沸石材料和具有LEV型骨架结构的沸石材料，通过所述方法可获得的LEV型骨架结构，以及具有包含YO 2和任选地包含X 2 O 3的LEV型骨架结构的无有机模板沸石材料，其中Y是四价元素，X是三价元素，其中沸石材料任选地包含一种或多种碱金属M，其中所述沸石材料是未煅烧的。

6. 发明申请

WO2010146156A1 ORGANOTEMPLATE-FREE SYNTHETIC PROCESS FOR THE PRODUCTION OF A ZEOLITIC MATERIAL 审中-公开
标题翻译：用于生产新型材料的无机合成方法
公开(公告)号：WO2010146156A1
公开(公告)日：2010-12-23
申请号：PCT/EP2010/058641
申请日：2010-06-18
申请人： BASF SE , YILMAZ, Bilge , MÜLLER, Ulrich , XIAO, Feng-Shou , XIE, Bin
发明人： YILMAZ, Bilge , MÜLLER, Ulrich , XIAO, Feng-Shou , XIE, Bin
IPC分类号： C01B39/00 , B01J29/00 , B01J29/70 , B01J29/72 , B01J29/78
CPC分类号： B01J37/0225 , B01D53/02 , B01D53/9413 , B01D53/9418 , B01D53/9436 , B01D2251/2062 , B01D2251/2067 , B01D2255/20738 , B01D2255/502 , B01D2257/402 , B01D2257/404 , B01D2257/406 , B01D2257/702 , B01D2257/80 , B01D2258/012 , B01J29/18 , B01J29/24 , B01J29/7007 , B01J29/7415 , B01J29/7615 , B01J29/7815 , B01J29/88 , B01J35/002 , B01J35/026 , B01J35/04 , B01J35/1019 , B01J35/1023 , B01J37/0009 , B01J37/0045 , B01J37/0246 , B01J2229/42 , C01B39/46 , C10G11/05 , C10G11/18 , Y02A50/2325 , Y02C20/10 , Y02P20/153
摘要： The present invention relates to an organotemplate-free synthetic process for the production of a zeolitic material having a BEA framework structure comprising YO 2 and optionally comprising X 2 O 3 , wherein said process comprises the steps of (1) preparing a mixture comprising seed crystals and at least one source for YO 2 ; and (2) crystallizing the mixture; wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises at least one alkali metal M, wherein when the BEA framework additionally comprises X 2 O 3 , the mixture according to step (1) comprises at least one source for X 2 O 3 , and wherein the seed crystals comprise zeolitic material having a BEA framework structure, preferably zeolite Beta.
摘要翻译：本发明涉及一种用于生产具有包含YO 2和任选地包含X 2 O 3的BEA骨架结构的沸石材料的无机模板合成方法，其中所述方法包括以下步骤：（1）制备包含晶种和至少一种来源为YO2; 和（2）使混合物结晶; 其中Y是四价元素，X是三价元素，其中沸石材料任选地包含至少一种碱金属M，其中当BEA骨架另外包含X 2 O 3时，根据步骤（1）的混合物包含至少一种源 X 2 O 3，并且其中所述晶种包含具有BEA骨架结构的沸石材料，优选沸石β。

7. 发明申请

WO2011158218A1 ZEOLITIC MATERIALS OF LEV-TYPE STRUCTURE AND METHODS FOR THEIR PRODUCTION 审中-公开
标题翻译： LEV型结构的抗菌材料及其生产方法
公开(公告)号：WO2011158218A1
公开(公告)日：2011-12-22
申请号：PCT/IB2011/052657
申请日：2011-06-17
申请人： BASF SE , TOKYO INSTITUTE OF TECHNOLOGY , BASF CHINA COMPANY LIMITED , YILMAZ, Bilge , MÜLLER, Ulrich , BETANCUR MORENO, Bibiana Andrea , GIES, Hermann , XIAO, Feng-Shou , TATSUMI, Takashi , BAO, Xinhe , ZHANG, Weiping , DE VOS, Dirk , PFAFF, Meike , XIE, Bin , ZHANG, Haiyan
发明人： YILMAZ, Bilge , MÜLLER, Ulrich , BETANCUR MORENO, Bibiana Andrea , GIES, Hermann , XIAO, Feng-Shou , TATSUMI, Takashi , BAO, Xinhe , ZHANG, Weiping , DE VOS, Dirk , PFAFF, Meike , XIE, Bin , ZHANG, Haiyan
IPC分类号： C01B39/48 , B01J20/18
CPC分类号： C01B39/48 , B01D2253/108 , B01D2255/50 , B01J20/186 , B01J20/2803 , B01J20/28042 , B01J20/28057 , B01J20/3007 , B01J20/3042 , B01J29/70 , C01B37/02 , C01B39/46 , C10G3/49 , C10G11/18 , C10G25/03 , C10G2300/405 , C10G2300/70 , Y02P30/20
摘要： Zeolitic materials of the LEV-type structure and methods for their production are provided. The method for the production of the zeolitic material having an LEV-type structure comprising Y0 2 and optionally comprising X 2 O 3 comprises the steps of: (1) preparing a mixture comprising one or more sources for Y0 2 ,one or more solvents, and optionally comprising seed crystals; and (2) crystallizing the mixture obtained in step (1), wherein Y is a tetravalent element, and X is a trivalent element, the zeolitic material optionally comprises one or more alkali metals M, the molar ratio of the total amount of the one or more solvents to the total amount of the one or more sources for Y0 2 based on Y0 2 is 9.5 or less, and the crystallization temperatures is 175°C or higher in step (2), the duration of crystallization at those temperatures is less than 14 days. The zeolitic materials, preferably being obtainable or obtained according to the inventive method have an LEV-type framework structure comprising Y0 2 and X 2 0 3 , one or more alkali metals M and display an Y:X atomic ratio of from 1 to 9.4.
摘要翻译：提供LEV型结构的沸石材料及其生产方法。制备具有包含YO 2和任选地包含X 2 O 3的LEV型结构的沸石材料的方法包括以下步骤：（1）制备包含一种或多种用于Y02，一种或多种溶剂和任选地包含晶种的源的混合物 ; 和（2）使步骤（1）中得到的混合物结晶，其中Y是四价元素，X是三价元素，所述沸石材料任选地包含一种或多种碱金属M，所述一元素的总量的摩尔比或更多的溶剂相对于基于Y02的Y02的一种或多种来源的总量为9.5以下，并且在步骤（2）中结晶温度为175℃以上，则在这些温度下的结晶持续时间小于14 天。优选根据本发明方法获得或获得的沸石材料具有包含YO 2和X 2 O 3的LEV型骨架结构，一种或多种碱金属M并且显示出1：9.4的Y:X原子比。

8. 发明申请

WO2011158219A1 ALKALI-FREE SYNTHESIS OF ZEOLITIC MATERIALS OF LEV-TYPE STRUCTURE 审中-公开
标题翻译：无结构的LEV型结构的ZEOLITIC材料的合成
公开(公告)号：WO2011158219A1
公开(公告)日：2011-12-22
申请号：PCT/IB2011/052658
申请日：2011-06-17
申请人： BASF SE , TOKYO INSTITUTE OF TECHNOLOGY , BASF CHINA COMPANY LIMITED , YILMAZ, Bilge , MÜLLER, Ulrich , PFAFF, Meike , GIES, Hermann , XIAO, Feng-Shou , TATSUMI, Takashi , BAO, Xinhe , ZHANG, Weiping , DE VOS, Dirk , IMAI, Hiroyuki , XIE, Bin , ZHANG, Haiyan
发明人： YILMAZ, Bilge , MÜLLER, Ulrich , PFAFF, Meike , GIES, Hermann , XIAO, Feng-Shou , TATSUMI, Takashi , BAO, Xinhe , ZHANG, Weiping , DE VOS, Dirk , IMAI, Hiroyuki , XIE, Bin , ZHANG, Haiyan
IPC分类号： C01B39/48 , B01J20/18
CPC分类号： C01B39/46 , B01D53/9418 , B01D2251/2067 , B01D2253/108 , B01D2253/3425 , B01D2255/20738 , B01D2255/20761 , B01D2255/50 , B01D2255/9207 , B01D2257/402 , B01D2257/404 , B01D2257/406 , B01D2258/012 , B01J20/186 , B01J20/28011 , B01J20/2803 , B01J20/28042 , B01J20/28057 , B01J29/70 , B01J2229/186 , C01B37/02 , C01B39/48 , C01P2006/12 , C07C1/20 , C07C2529/70 , C07C2529/80 , C10G3/49 , C10G11/18 , C10G25/03 , C10G2300/405 , C10G2300/70 , Y02C20/10 , Y02P20/153 , Y02P20/52 , Y02P30/20
摘要： Zeolitic materials of the LEV-type structure and methods for their production are provided. The method for producing of the zeolitic material having an LEV-type structure comprising Y0 2 and optionally comprising X 2 O 3 comprises the steps of: (1) preparing a mixture comprising one or more sources for Y0 2 , one or more solvents, and optionally comprising seed crystals; and (2) crystallizing the mixture obtained in step (1), wherein Y is a tetravalent element, and X is a trivalent element, the mixture crystallized in step (2) contains 3 wt.-% or less of one or more metals M based on 100 wt-% of Y0 2 , even more preferably contains no metal M, wherein M stands for sodium or potassium.
摘要翻译：提供LEV型结构的沸石材料及其生产方法。制备具有包含YO 2和任选地包含X 2 O 3的LEV型结构的沸石材料的方法包括以下步骤：（1）制备包含一种或多种用于Y02，一种或多种溶剂和任选包含晶种的源的混合物; 和（2）使步骤（1）中得到的混合物结晶，其中Y是四价元素，X是三价元素，在步骤（2）中结晶的混合物含有3重量％或更少的一种或多种金属M 基于100重量％的Y02，甚至更优选不含金属M，其中M代表钠或钾。

9. 发明申请

WO2010145077A1 ORGANOTEMPLATE-FREE SYNTHETIC PROCESS FOR PRODUCTION OF ZEOLITIC MATERIAL 审中-公开
标题翻译：用于生产新型材料的无机合成方法
公开(公告)号：WO2010145077A1
公开(公告)日：2010-12-23
申请号：PCT/CN2009/072336
申请日：2009-06-18
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , XIAO, Fengshou , XIE, Bin , MÜLLER, Ulrich , YILMAZ, Bilge
发明人： XIAO, Fengshou , XIE, Bin , MÜLLER, Ulrich , YILMAZ, Bilge
IPC分类号： C01B39/02 , C01B39/06 , C01B39/12 , B01J29/04 , B01J29/068 , B01J29/072 , B01J29/076 , B01J29/86 , B01J29/87 , B01J29/88 , B01J29/89
CPC分类号： B01J29/7007 , B01D53/9418 , B01D2251/2062 , B01D2251/2067 , B01D2255/502 , B01D2255/9155 , B01D2258/012 , B01J29/88 , C01B37/02 , C01B39/06 , C01B39/065 , C01B39/46 , C10G11/05 , C10G11/18
摘要： Provided is an organotemplate-free synthetic process for the production of a zeolitic material having a BEA framework structure comprising YO 2 and optionally comprising X 2 O 3 , wherein said process comprises the steps of (1) preparing a mixture comprising seed crystals and at least one source for YO 2 ; and (2) crystallizing the mixture; wherein Y is a tetravalent element, and X is a trivalent element, wherein the zeolitic material optionally comprises at least one alkali metal M, wherein when the BEA framework additionally comprises X 2 O 3 , the mixture according to step (1) comprises at least one source for X 2 O 3 , and wherein the seed crystals comprise zeolitic material having a BEA framework structure, preferably zeolite Beta.
摘要翻译：提供了一种用于生产具有包含YO 2且任选地包含X 2 O 3的BEA骨架结构的沸石材料的无有机模板的合成方法，其中所述方法包括以下步骤：（1）制备包含晶种和至少一种YO2源的混合物 ; 和（2）使混合物结晶; 其中Y是四价元素，X是三价元素，其中沸石材料任选地包含至少一种碱金属M，其中当BEA骨架另外包含X 2 O 3时，根据步骤（1）的混合物包含至少一种源 X 2 O 3，并且其中所述晶种包含具有BEA骨架结构的沸石材料，优选沸石β。

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