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1. 发明申请

WO1996027213A1 HIGH GAIN ULTRAVIOLET PHOTOCONDUCTOR BASED ON WIDE BANDGAP NITRIDES 审中-公开
标题翻译：基于宽带纳米粒子的高增益超紫外光电子器件
公开(公告)号：WO1996027213A1
公开(公告)日：1996-09-06
申请号：PCT/US1996002865
申请日：1996-02-26
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BARANY, Barbara, G. , REIMER, Scott, T. , ULMER, Robert, P. , ZOOK, J., David
IPC分类号： H01L31/0304
CPC分类号： H01L31/03042 , H01L31/09 , Y02E10/544 , Y02P70/521
摘要： A photoconductor (10) has an active layer (20) of gallium nitride having approximately 10 to 5 x 10 net donor sites per cubic centimeter and is sensitive to UV radiation. This photoconductor has at least one of a sheet resistance in the approximate range of 10 to 5 x 10 ohms/unit area and a relatively low level of photoluminescence in the range from about 430-450 nm when excited with light of energy higher than the bandgap energy of 3.4 eV. These criteria tend to define similar semiconductor materials which can form the active layer of an ultraviolet (UV) photodetector having the improved characteristics of a relatively low dark resistance, high sensitivity over at least a range of UV radiation intensity, and decreasing gain with increasing UV radiation.
摘要翻译：光电导体（10）具有氮化镓活性层（20），每立方厘米具有大约10 16至5×10 16个净供体位点，并且对UV辐射敏感。该光电导体具有在大约10 4至5×10 6欧姆/单位面积的大致范围内的薄层电阻中的至少一种，当用光激发时具有在约430-450nm范围内的较低水平的光致发光的能量高于3.4 eV的带隙能量。这些标准倾向于定义类似的半导体材料，其可以形成紫外（UV）光电探测器的有源层，其具有相对较低的暗电阻，在至少一个UV辐射强度的范围内的高灵敏度的改进特性，并且随着增加的紫外线而减小增益辐射。

2. 发明申请

WO1996018873A1 INTEGRATED RESONANT MICROBEAM SENSOR AND TRANSISTOR OSCILLATOR 审中-公开
标题翻译：集成式谐振微波传感器和晶体振荡器
公开(公告)号：WO1996018873A1
公开(公告)日：1996-06-20
申请号：PCT/US1995016441
申请日：1995-12-15
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L09/00
CPC分类号： G01P15/097 , G01L1/183 , G01L9/0019
摘要： At least one microbeam situated on a substrate, having a resonant frequency dependent on the strain on the microbeam which may be affected by the bending of the substrate. The beam or beams have sense and drive electrodes proximate to the beam or beams and form capacitors with a beam being the other electrode. The capacitance varies as the beam moves in vibration. The sense electrode is connected to an input of a transistor, such as the gate or base, and the drive electrode is connected to an output of the transistor. The transistor has a load impedance with a capacitive component to aid in the sustaining of vibration of the beam at a resonant frequency. A high ohm resistor is connected between the gate and the drain of the transistor to appropriately bias the gate. The bending of the substrate may be caused by a magnitude of a physical stimulus being measured. However, the bending of the substrate is not utilized nor desired in the filter and temperature sensing configurations of the invention. The frequency of resonance is an indication of the magnitude of the physical parameter. Variants of the sensor may be implemented with different placements of the sense and drive electrodes, and additional electronics as needed to implement the various configurations and microbeam geometry. Additional sense and/or drive electrodes and beams also may be incorporated in the transistor resonant microbeam sensor.
摘要翻译：位于衬底上的至少一根微束，具有取决于微束上的应变的共振频率，其可能受到衬底的弯曲的影响。光束或光束具有靠近光束或光束的感测和驱动电极，并形成具有作为另一电极的光束的电容器。电容随着光束在振动中的移动而变化。感测电极连接到诸如栅极或基底的晶体管的输入，并且驱动电极连接到晶体管的输出端。晶体管具有具有电容分量的负载阻抗，以有助于以共振频率维持波束的振动。一个高欧姆电阻连接在晶体管的栅极和漏极之间以适当地偏置栅极。衬底的弯曲可以由被测量的物理刺激的大小引起。然而，在本发明的过滤器和温度检测结构中，基板的弯曲不被利用或不期望。谐振频率表示物理参数的大小。传感器的变体可以通过感测和驱动电极的不同布置以及实现各种构造和微束几何形状所需的附加电子装置来实现。附加的感测和/或驱动电极和光束也可以并入晶体管谐振微束传感器中。

3. 发明申请

WO1995003533A2 STATIC PRESSURE COMPENSATION OF RESONANT INTEGRATED MICROBEAM SENSORS 审中-公开
标题翻译：共振式微波传感器静态补偿
公开(公告)号：WO1995003533A2
公开(公告)日：1995-02-02
申请号：PCT/US1994008066
申请日：1994-07-19
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L01/18
CPC分类号： G01P15/097 , G01D3/0365 , G01L1/18 , G01L9/0019 , G01P1/006
摘要： A temperature and static pressure compensated differential pressure sensor includes a semiconductor substrate in which a flexible, pressure responsive diaphragm is formed. A pressure responsive resonant microbeam is fabricated at the diaphragm periphery. For temperature compensation, a secondary resonant microbeam sensor is fabricated on the substrate at a peripheral location beyond the point of substrate attachment to a pressure tube or other support. For static pressure compensation, another secondary resonant microbeam can be positioned remote from the diaphragm and at a location of maximum substrate response to static pressure. A further resonant microbeam can be mounted at the diaphragm center to augment the signal due to diaphragm deflections. Also disclosed is an accelerometer including a proof mass, a rigid rim surrounding the proof mass, and a series of narrow, flexible bridges supporting the proof mass relative to the rim. The bridges flex responsive to accelerations, thus to allow the proof mass to move relative to the rim. At least one of the bridges incorporates a resonant microbeam for measuring acceleration by virtue of the induced strain from flexure of its associated bridge. For temperature compensation, a secondary resonant microbeam is fabricated along the rim.
摘要翻译：温度和静压补偿压差传感器包括其中形成有柔性的压力响应膜片的半导体衬底。压力响应谐振微束在隔膜周边制造。对于温度补偿，次级谐振微束传感器在基板上的周边位置处制造，超过衬底连接到压力管或其他支撑点。对于静态压力补偿，另一个次级谐振微束可以远离隔膜定位在最大衬底对静压的响应位置。可以在隔膜中心安装另外的谐振微束，以增加由于隔膜偏转引起的信号。还公开了一种加速度计，其包括检测质量块，围绕检测质量块的刚性边缘，以及一系列相对于边缘支撑证明物质的窄的柔性桥梁。桥梁响应于加速度而弯曲，从而允许检测质量相对于轮辋移动。至少一个桥结合有谐振微束，用于通过其相关桥的挠曲引起的应变来测量加速度。对于温度补偿，沿着边缘制造次级谐振微束。

4. 发明公开

EP1040326A2 RING LASER GYROSCOPE WITH MIGRATION RESISTANT DIELECTRIC MATERIAL 审中-公开
标题翻译：与MIGRATIONSRESISTENTEM电介质材料环形激光陀螺
公开(公告)号：EP1040326A2
公开(公告)日：2000-10-04
申请号：EP98967024.5
申请日：1998-11-19
申请人： Honeywell Inc.
发明人： FORD, Carol, M. , YOUNGNER, Daniel, W. , ZOOK, J., David
IPC分类号： G01G19/00
CPC分类号： H01S3/083 , G01C19/661 , H01S3/038 , H01S3/0835
摘要： An apparatus and method for prevention of migration of mobile ions in a gyroscope. A dielectric barrier material layer is placed between a gyroscope body and one or more gyroscope components. The dielectric barrier material layer reduces the electric field formed in the gyroscope block, and thus reduces ion migration therein. The material may prevent mobile ions from reaching the cathode seal.

5. 发明公开

EP0797758A1 INTEGRATED RESONANT MICROBEAM SENSOR AND TRANSISTOR OSCILLATOR 失效
标题翻译：集成谐振微束传感器和晶体管振荡器
公开(公告)号：EP0797758A1
公开(公告)日：1997-10-01
申请号：EP95943138.0
申请日：1995-12-15
申请人： HONEYWELL INC.
发明人： BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L1 , G01L9 , G01P15 , H03H9
CPC分类号： G01P15/097 , G01L1/183 , G01L9/0019
摘要： At least one microbeam situated on a substrate, having a resonant frequency dependent on the strain on the microbeam which may be affected by the bending of the substrate. The beam or beams have sense and drive electrodes proximate to the beam or beams and form capacitors with a beam being the other electrode. The capacitance varies as the beam moves in vibration. The sense electrode is connected to an input of a transistor, such as the gate or base, and the drive electrode is connected to an output of the transistor. The transistor has a load impedance with a capacitive component to aid in the sustaining of vibration of the beam at a resonant frequency. A high ohm resistor is connected between the gate and the drain of the transistor to appropriately bias the gate. The bending of the substrate may be caused by a magnitude of a physical stimulus being measured. However, the bending of the substrate is not utilized nor desired in the filter and temperature sensing configurations of the invention. The frequency of resonance is an indication of the magnitude of the physical parameter. Variants of the sensor may be implemented with different placements of the sense and drive electrodes, and additional electronics as needed to implement the various configurations and microbeam geometry. Additional sense and/or drive electrodes and beams also may be incorporated in the transistor resonant microbeam sensor.

6. 发明授权

EP0740781B1 COMPENSATION OF RESONANT INTEGRATED MICROBEAM SENSORS 失效
标题翻译：补偿与共振振动集成式微梁式传感器
公开(公告)号：EP0740781B1
公开(公告)日：1998-09-02
申请号：EP94927904.6
申请日：1994-07-19
申请人： HONEYWELL INC.
发明人： BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L1/18 , G01D3/028 , G01P15/10
CPC分类号： G01P15/097 , G01D3/0365 , G01L1/18 , G01L9/0019 , G01P1/006

7. 发明公开

EP0812478A1 HIGH GAIN ULTRAVIOLET PHOTOCONDUCTOR BASED ON WIDE BANDGAP NITRIDES 失效
标题翻译： UV感光高增益，宽带隙OFF NITRIDE
公开(公告)号：EP0812478A1
公开(公告)日：1997-12-17
申请号：EP96906663.0
申请日：1996-02-26
申请人： HONEYWELL INC.
发明人： BARANY, Barbara, G. , REIMER, Scott, T. , ULMER, Robert, P. , ZOOK, J., David
IPC分类号： H01L31
CPC分类号： H01L31/03042 , H01L31/09 , Y02E10/544 , Y02P70/521
摘要： A photoconductor (10) has an active layer (20) of gallium nitride having approximately 1016 to 5 x 1016 net donor sites per cubic centimeter and is sensitive to UV radiation. This photoconductor has at least one of a sheet resistance in the approximate range of 104 to 5 x 106 ohms/unit area and a relatively low level of photoluminescence in the range from about 430-450 nm when excited with light of energy higher than the bandgap energy of 3.4 eV. These criteria tend to define similar semiconductor materials which can form the active layer of an ultraviolet (UV) photodetector having the improved characteristics of a relatively low dark resistance, high sensitivity over at least a range of UV radiation intensity, and decreasing gain with increasing UV radiation.

8. 发明授权

EP0797758B1 INTEGRATED RESONANT MICROBEAM SENSOR AND TRANSISTOR OSCILLATOR 失效
标题翻译：集成谐振微束传感器和晶体管振荡器
公开(公告)号：EP0797758B1
公开(公告)日：2002-09-18
申请号：EP95943138.8
申请日：1995-12-15
申请人： HONEYWELL INC.
发明人： BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L9/00 , G01L1/10 , G01P15/10
CPC分类号： G01P15/097 , G01L1/183 , G01L9/0019

9. 发明公开

EP1166128A1 FIBER-OPTIC VIBRATION SENSOR BASED ON FREQUENCY MODULATION OF LIGHT-EXCITED OSCILLATORS 审中-公开
标题翻译：光纤振动传感器基于光激发振子的调频
公开(公告)号：EP1166128A1
公开(公告)日：2002-01-02
申请号：EP00915830.4
申请日：2000-02-22
申请人： Honeywell Inc.
发明人： ZOOK, J., David , HERB, William, R. , BURNS, David, W.
IPC分类号： G01P15/10 , G01H9/00
CPC分类号： G01P15/097 , G01P2015/0828
摘要： A sensor device for detecting vibration, including a light source for providing a laser light, a first optical fiber connected to the source for transmitting the laser light, an oscillator positioned to receive the transmitted laser light and adapted to reflect the light as a frequency modulated light; a second optical fiber positioned to capture the frequency modulated light to transmit the frequency modulated light; and a frequency modulated discriminator for receiving the frequency modulated light from the second optical fiber and producing a signal responsive of vibration of the oscillator. In a preferred embodiment, the frequency modulated discriminator further includes a frequency meter for determining the average number of cycles per unit time to provide a second signal responsive of the temperature of the oscillator. The optical fibers may be a pair of different fibers positioned for transmitting the laser light and the frequency modulated light respectively, or the same fiber positioned for transmitting both the laser light and the frequency modulated light. The preferred oscillator includes a microchip having a microbeam mounted on a thin silicon cantilever such that deflection of the beam perpendicular to the plane of the microchip changes the tension in the microbeam to change its resonant frequency. Also preferred is a microbeam including a thin metal deposit to create a bimorph structure.

10. 发明公开

EP0740781A1 STATIC PRESSURE COMPENSATION OF RESONANT INTEGRATED MICROBEAM SENSORS 失效
标题翻译：静态压缩补偿挥杆梁微转换器
公开(公告)号：EP0740781A1
公开(公告)日：1996-11-06
申请号：EP94927904.0
申请日：1994-07-19
申请人： HONEYWELL INC.
发明人： BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L1 , G01D3 , G01L9 , G01P1 , G01P15
CPC分类号： G01P15/097 , G01D3/0365 , G01L1/18 , G01L9/0019 , G01P1/006
摘要： A temperature and static pressure compensated differential pressure sensor includes a semiconductor substrate in which a flexible, pressure responsive diaphragm is formed. A pressure responsive resonant microbeam is fabricated at the diaphragm periphery. For temperature compensation, a secondary resonant microbeam sensor is fabricated on the substrate at a peripheral location beyond the point of substrate attachment to a pressure tube or other support. For static pressure compensation, another secondary resonant microbeam can be positioned remote from the diaphragm and at a location of maximum substrate response to static pressure. A further resonant microbeam can be mounted at the diaphragm center to augment the signal due to diaphragm deflections. Also disclosed is an accelerometer including a proof mass, a rigid rim surrounding the proof mass, and a series of narrow, flexible bridges supporting the proof mass relative to the rim. The bridges flex responsive to accelerations, thus to allow the proof mass to move relative to the rim. At least one of the bridges incorporates a resonant microbeam for measuring acceleration by virtue of the induced strain from flexure of its associated bridge. For temperature compensation, a secondary resonant microbeam is fabricated along the rim.

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