专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1995004265A2 DIELECTRICALLY ISOLATED RESONANT MICROSENSORS 审中-公开
标题翻译：电介质隔离型MICROSENSORS
公开(公告)号：WO1995004265A2
公开(公告)日：1995-02-09
申请号：PCT/US1994008258
申请日：1994-07-22
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BURNS, David, W.
IPC分类号： G01N00/00
CPC分类号： H04R17/025 , G01L1/183 , G01L9/0019 , G01P15/0802 , G01P15/097 , G01P2015/0828
摘要： A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam fixed at both ends relative to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed at the bottom of a trough in the substrate directly beneath the flexure beam. A drive electrode and a piezoresistive element are supported by the beam, formed over a silicon nitride thin film layer deposited onto the top surface of the flexure beam. A second silicon nitride layer covers the drive electrode and piezoresistor, cooperating with the first silicon nitride layer to dielectrically encapsulate the drive electrode and piezoresistor. The silicon nitride further extends outwardly of the beam to a location between the polysilicon layer that contains the beam, and the cover, to isolate the cover from the flexure beam. A polysilicon film is applied over the upper silicon nitride layer as a passivation layer to protect the silicon nitride during gauge fabrication. The process for fabricating the gauge includes a sequence of applying the various polysilicon and silicon nitride layers by low pressure chemical vapor deposition, in combination with selective etching to define the flexure beam, electric circuit components and vacuum chamber.
摘要翻译：共振应变计包括硅衬底，相对于衬底的两端固定的多晶硅弯曲梁，以及与衬底配合的多晶硅刚性盖，以将挠曲梁封闭在密封的真空室内。在盖上形成上部偏置电极，并且在弯曲梁正下方的基板的底部的底部形成下部偏置电极。驱动电极和压阻元件由光束支撑，形成在沉积在挠曲束的顶表面上的氮化硅薄膜层上。第二氮化硅层覆盖驱动电极和压电电阻器，与第一氮化硅层配合以介电地封装驱动电极和压敏电阻器。氮化硅进一步从梁的外侧延伸到包含梁的多晶硅层与盖之间的位置，以将盖与弯曲梁隔离。将多晶硅膜施加在上部氮化硅层上作为钝化层，以在量规制造期间保护氮化硅。用于制造该量规的方法包括通过低压化学气相沉积施加各种多晶硅和氮化硅层的顺序，与选择性蚀刻结合以限定挠曲束，电路部件和真空室。

2. 发明申请

WO1998029722A1 METHOD FOR MAKING A THIN FILM RESONANT MICROBEAM ABSOLUTE PRESSURE SENSOR 审中-公开
标题翻译：制造薄膜共振微波绝对压力传感器的方法
公开(公告)号：WO1998029722A1
公开(公告)日：1998-07-09
申请号：PCT/US1997024108
申请日：1997-12-29
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , HERB, William, R. , BURNS, David, W.
IPC分类号： G01L09/00
CPC分类号： G01L9/0019
摘要： A micromechanical sensor having a polysilicon beam that is an integral part of the diaphragm resulting in a frequency of the beam that is a direct result of the pressure applied to the external surface of the diaphragm. Fabrication of this resonant microbeam sensor has no backside wafer processing, and involves a process and layout independent of wafer thickness for high yield and robustness. Both the diaphragm and resonant beam are formed from polysilicon. The sensor may have more than one resonant beam. The sensor beam or beams may be driven and sensed by electrical or optical mechanisms. For stress isolation, the sensor may be situated on a cantilevered single crystal silicon paddle. The sensor may be recessed on the isolating die for non-interfering interfacing with optical or electrical devices.
摘要翻译：一种微机械传感器，其具有作为隔膜的整体部分的多晶硅束，导致梁的频率，其是施加到隔膜的外表面的压力的直接结果。这种谐振微束传感器的制造没有背面晶片处理，并且涉及与晶片厚度无关的工艺和布局，用于高产率和鲁棒性。膜片和谐振光束均由多晶硅形成。传感器可以具有多于一个谐振波束。传感器光束或光束可以由电或光学机构驱动和感测。对于应力隔离，传感器可以位于悬臂单晶硅片上。传感器可以凹入隔离管芯，用于与光学或电气设备的非干扰接口。

3. 发明申请

WO1994028452A1 OPTO-ELECTRO-MECHANICAL DEVICE OR FILTER, PROCESS FOR MAKING, AND SENSORS MADE THEREFROM 审中-公开
标题翻译：光电机械或过滤器，制造工艺和传感器
公开(公告)号：WO1994028452A1
公开(公告)日：1994-12-08
申请号：PCT/US1994005911
申请日：1994-05-25
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , GUCKEL, Henry , ZOOK, James, D. , BURNS, David, W.
IPC分类号： G02B26/08
CPC分类号： H01L31/00 , G01J5/44 , G01L9/002 , G01P15/093 , G01P15/097 , G01P2015/0828 , G02B26/001 , G02B26/0833
摘要： This invention relates to devices and their applications which employ a resonant semiconductor member whose vibratory motion is coupled to the radiant energy cast onto a photovoltaic energy conversion device. It also relates to such devices whose vibratory behaviour is otherwise affected and which affect can be read optically. Optical methods are used to drive the microbeam, sense the microbeam vibrations and, if certain conditions are met, produce self-oscillation with no intervening electro-optical components, thus eliminating the need for piezoresistors, drive electrodes, electrical contacts and any metallurgy for electrical interconnection. A resonant microstructure member of one electrical type (p or n) is formed over a wafer, this member extending substantially or fully over a cavity or other space in the wafer. At a location in a wall or floor of the cavity is a region of opposite type (p or n) material. The interface between the two types is a p-n junction and is the best known form of a photovoltaic structure. The flexible member and the opposite type region should be substantially in the path of the driving radiant energy. The devices of this invention act as opto-electro-mechanically coupled photodiodes-causing the flexible member to be attracted electrostatically to the opposite type region by the incident driving light. The close proximity of the flexible member to the substrate or to an integrated cover or top cap forms a Fabry-Perot interferometer capable of producing large intensity modulations of the reflected light with small displacements of the member. A preferred form would have the vibratory member located within an evacuated capsule. The top cap would seal the member off on one side, and the wafer on which it was mounted or formed would seal the other. Applications as pressure sensor, accelerometer, acoustic ranger apparatus and temperature sensitive apparatus.
摘要翻译：本发明涉及使用谐振半导体元件的器件及其应用，其振动与辐射能耦合到光伏能量转换器件上。它还涉及这样的装置，其振动特性是否受到影响，并且可以以光学的方式读取其影响。使用光学方法来驱动微束，感测微束振动，并且如果满足某些条件，则不产生中间的电光部件产生自振荡，因此不需要压敏电阻器，驱动电极，电触点和用于电气的任何冶金互连。在晶片上形成一种电气型（p或n）的共振微结构构件，该构件基本上或完全地在晶片的空腔或其它空间上延伸。在空腔的墙壁或地板的一个位置是相反类型（p或n）材料的区域。两种类型之间的界面是p-n结，是光伏结构中最着名的形式。柔性构件和相对的区域应基本上位于驱动辐射能的路径中。本发明的装置用作光电机械耦合的光电二极管，导致柔性构件通过入射的驱动光被静电吸引到相对的类型区域。柔性构件与衬底或集成的盖或顶盖的紧密接近形成法布里 - 珀罗干涉仪，该干涉仪能够以较小的构件位移产生反射光的大的强度调制。优选的形式将使振动部件位于抽空的胶囊内。顶盖将在一侧封闭构件，并且其上安装或形成的晶片将密封另一侧。用作压力传感器，加速度计，声波巡检仪和温度敏感仪器。

4. 发明申请

WO1995007448A1 RESONANT GAUGE WITH MICROBEAM DRIVEN IN CONSTANT ELECTRIC FIELD 审中-公开
标题翻译：在恒定电场中驱动微波的谐振仪
公开(公告)号：WO1995007448A1
公开(公告)日：1995-03-16
申请号：PCT/US1993008404
申请日：1993-09-07
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , ZOOK, James, D. , BURNS, David, W.
IPC分类号： G01L09/00
CPC分类号： G01P15/097 , G01B7/16 , G01L1/183 , G01L9/0019 , Y10S73/01
摘要： A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam attached at both ends to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed on the substrate directly beneath and spaced apart from the flexure beam. A drive electrode is formed in or on the beam, centrered between the upper and lower bias electrodes transversely with respect to the direction of beam elongation. The upper and lower electrodes are biased at constant voltage levels, of equal magnitude and opposite polarity. The drive electrode, ordinarily biased at ground, is selectively charged by applying an oscillating drive voltage, to cause mechanical oscillation of the beam. A piezoresistor element, formed on the beam, senses beam oscillation and provides a position indicating input to the oscillator circuit that drives the beam. The beam tends to oscillate at its natural resonant frequency. The piezoresistor thus provides the natural resonant frequency to the oscillating circuit, adjusting the frequency of the beam drive signal toward coincidence with the natural resonant frequency. A shield electrode can be formed on the flexure beam between the piezoresistor and the drive electrode, to insure against parasitic capacitance. In alternative embodiments, the drive signal is applied to one of the bias electrodes to oscillate the beam, and beam oscillation is sensed capacitively.
摘要翻译：共振应变计包括硅衬底，在两端附着到衬底的多晶硅弯曲梁和与衬底配合的多晶硅刚性盖，以将挠曲梁封闭在密封的真空室内。在盖上形成上部偏置电极，并且在基板上直接形成下偏置电极，并且与弯曲梁间隔开。驱动电极形成在梁上或梁上，相对于梁伸长方向横向上下偏置电极之间。上电极和下电极以恒定的电压电平被偏置，具有相等的幅度和相反的极性。通常施加在地面上的驱动电极通过施加振荡驱动电压来选择性地充电，以引起光束的机械振荡。形成在光束上的压敏电阻元件感测光束振荡，并提供指示输入到驱动光束的振荡器电路的位置。光束倾向于以其固有谐振频率振荡。因此，压电晶体管向振荡电路提供固有谐振频率，从而将光束驱动信号的频率调整为与固有谐振频率一致。可以在压敏电阻和驱动电极之间的挠曲束上形成屏蔽电极，以确保寄生电容。在替代实施例中，将驱动信号施加到偏置电极之一以振荡该光束，并且电容地感测光束振荡。

5. 发明申请

WO1995003532A1 CANTILEVERED MICROBEAM TEMPERATURE SENSOR 审中-公开
标题翻译： CANTILEVERED MICROBEAM温度传感器
公开(公告)号：WO1995003532A1
公开(公告)日：1995-02-02
申请号：PCT/US1994008058
申请日：1994-07-19
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BURNS, David, W.
IPC分类号： G01K07/32
CPC分类号： G01D3/0365 , G01K7/32 , G01L9/0019 , G01P1/006
摘要： Measuring devices employing resonant strain gauges, e.g. pressure transducers or accelerometers, are compensated for variation in temperature by employing a secondary resonant microbeam in combination with the primary microbeam of the strain gauge. The secondary microbeam is mounted in cantilever fashion, with one end of the elongate polysilicon beam fixed to a silicon substrate, while the remainder of the beam is free to oscillate relative to the substrate. An oscillating drive voltage is supplied to a drive electrode mounted on the beam and a substantially uniform electrical field is maintained in the region about the beam. The frequency of oscillation is controlled by a piezo resistor formed on the beam and used for detecting instantaneous beam position relative to the substrate. The canilevered microbeam is free from the effects of residual or induced strain. Therefore, its natural resonant frequency depends upon temperature, as beam modulus of elasticity and density change with temperature. By contrast, the resonant beam of the strain gauge responds to induced strain and temperature effects. Outputs based on the natural resonant frequencies of the cantilever beam and the strain gauge beam can be combined to provide a strain gauge output compensated for temperature effects.
摘要翻译：使用共振应变计的测量装置，例如压力传感器或加速度计通过使用次级共振微束与应变仪的初级微束组合来补偿温度变化。次级微束以悬臂方式安装，细长多晶硅束的一端固定到硅衬底，而束的其余部分相对于衬底自由振荡。振荡驱动电压被提供给安装在光束上的驱动电极，并且在围绕光束的区域中保持基本均匀的电场。振荡频率由形成在光束上的压电电阻控制，用于检测相对于衬底的瞬时光束位置。罐头微束没有残留或诱导应变的影响。因此，当波束弹性模量和密度随温度变化时，其天然共振频率取决于温度。相比之下，应变计的谐振波束响应诱发的应变和温度效应。可以组合基于悬臂梁和应变计梁的自然共振频率的输出，以提供补偿温度效应的应变计输出。

6. 发明申请

WO1993012410A1 PIEZORESISTIVE SILICON PRESSURE SENSOR DESIGN 审中-公开
标题翻译： PIEZORESISTIVE SILICON压力传感器设计
公开(公告)号：WO1993012410A1
公开(公告)日：1993-06-24
申请号：PCT/US1992011053
申请日：1992-12-11
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BURNS, David, W. , GLEN, Max, C.
IPC分类号： G01L09/00
CPC分类号： G01L9/0055 , G01L9/0042 , Y10T29/49103
摘要： Long rectangular plates or diaphragms of microfabricated silicon structures use parallel piezoresistive strips located near the perimeter and near the center to measure strain. Primary use is for absolute pressure sensing. Multiple plates may be used.
摘要翻译：微型硅结构的长矩形板或隔膜使用位于周边附近并靠近中心的平行压阻条来测量应变。主要用于绝对压力感测。可以使用多个板。

7. 发明申请

WO1998029943A1 ZERO TCF THIN FILM RESONATOR 审中-公开
标题翻译：零TCF薄膜共振器
公开(公告)号：WO1998029943A1
公开(公告)日：1998-07-09
申请号：PCT/US1997020639
申请日：1997-11-13
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , HERB, William, R. , BURNS, David, W. , YOUNGNER, Daniel, W.
IPC分类号： H03H09/24
CPC分类号： B81B3/0072 , B81B2201/0271 , H03H9/02448 , H03H9/2463 , H03H9/2473
摘要： A multi-material resonant thin film beam for a micromechanical sensor having a zero temperature coefficient of frequency (TCF) which is the resonant frequency shift with temperature change. One of the materials may be polysilicon and the other material may be silicon nitride or silicon oxide. Each material has a different thermal coefficient of expansion. The proportion of the various materials is adjusted and the specific geometries are determined so that the TCF is zero. One embodiment is a microbeam composed of two polysilicon thin films with a silicon nitride thin film inserted between the polysilicon films. The thickness of the silicon nitride film may be adjusted to trim the TCF to zero. The film of nitride instead may be placed on one side of a polysilicon film to form a beam. Dual or multiple beam resonators likewise may be made with several materials. The nitride may be placed in the shank areas which join and secure the ends of the beams. Such zero TCF beams may be incorporated in microsensor structures for measuring pressure, temperature, strain and other parameters.
摘要翻译：一种用于微机械传感器的多材料谐振薄膜波束，其具有零温度频率系数（TCF），其是随着温度变化的谐振频率偏移。其中一种材料可以是多晶硅，另一种材料可以是氮化硅或氧化硅。每种材料具有不同的热膨胀系数。调整各种材料的比例，确定特定几何形状，使得TCF为零。一个实施例是由两个多晶硅薄膜组成的微束，其中氮化硅薄膜插入在多晶硅膜之间。可以调节氮化硅膜的厚度以将TCF修整为零。氮化物膜可以放置在多晶硅膜的一侧以形成光束。双或多束谐振器同样可以由几种材料制成。氮化物可以放置在连接并固定梁的端部的柄部区域中。这种零TCF光束可以被并入用于测量压力，温度，应变和其它参数的微传感器结构中。

8. 发明申请

WO1998029721A1 A THIN FILM RESONANT MICROBEAM ABSOLUTE PRESSURE SENSOR 审中-公开
标题翻译：薄膜共振微波绝对压力传感器
公开(公告)号：WO1998029721A1
公开(公告)日：1998-07-09
申请号：PCT/US1997020956
申请日：1997-11-17
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , HERB, William, R. , BURNS, David, W.
IPC分类号： G01L09/00
CPC分类号： G01L9/002
摘要： A micromechanical sensor having a polysilicon beam that is an integral part of the diaphragm resulting in a frequency of the beam that is a direct result of the pressure applied to the external surface of the diaphragm. Fabrication of this resonant microbeam sensor has no backside wafer processing, and involves a process and layout independent of wafer thickness for high yield and robustness. Both the diaphragm and resonant beam are formed from polysilicon. The sensor may have more than one resonant beam. The sensor beam or beams may be driven and sensed by electrical or optical mechanisms. For stress isolation, the sensor may be situated on a cantilevered single crystal silicon paddle. The sensor may be recessed on the isolating die for non-interfering interfacing with optical or electrical devices. The sensor die may be circular for ease in mounting with fiber optic components.
摘要翻译：一种微机械传感器，其具有作为隔膜的整体部分的多晶硅束，导致梁的频率，其是施加到隔膜的外表面的压力的直接结果。这种谐振微束传感器的制造没有背面晶片处理，并且涉及与晶片厚度无关的工艺和布局，用于高产率和鲁棒性。膜片和谐振光束均由多晶硅形成。传感器可以具有多于一个谐振波束。传感器光束或光束可以由电或光学机构驱动和感测。对于应力隔离，传感器可以位于悬臂单晶硅片上。传感器可以凹入隔离管芯，用于与光学或电气设备的非干扰接口。传感器芯片可以是圆形的，以便于光纤部件的安装。

9. 发明申请

WO1996028735A1 MECHANICAL RESONANCE, SILICON ACCELEROMETER 审中-公开
标题翻译：机械共振，硅加速度计
公开(公告)号：WO1996028735A1
公开(公告)日：1996-09-19
申请号：PCT/US1995003011
申请日：1995-03-13
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BURNS, David, W. , FRISCHE, Richard, H.
IPC分类号： G01P15/10
CPC分类号： G01P15/097 , G01P2015/0828
摘要： A silicon accelerometer includes several silicon layers. The silicon layers form two silicon beams supported by flexure members. An accelaration responsive silicon mass is arranged to bend the flexure members in response to accelerations. The silicon beams are vibrated in vacuum chambers and gas damping is provided for the acceleration responsive mass and the flexure members. Sensing electronics detect vibration of the two silicon beams.
摘要翻译：硅加速度计包括多个硅层。硅层形成由弯曲构件支撑的两个硅梁。布置响应硅质量的加速度，以响应于加速度弯曲弯曲构件。硅梁在真空室中振动，并为加速响应质量块和挠曲构件提供气体阻尼。感应电子元件检测两个硅光束的振动。

10. 发明申请

WO1996018873A1 INTEGRATED RESONANT MICROBEAM SENSOR AND TRANSISTOR OSCILLATOR 审中-公开
标题翻译：集成式谐振微波传感器和晶体振荡器
公开(公告)号：WO1996018873A1
公开(公告)日：1996-06-20
申请号：PCT/US1995016441
申请日：1995-12-15
申请人： HONEYWELL INC.
发明人： HONEYWELL INC. , BURNS, David, W. , ZOOK, J., David
IPC分类号： G01L09/00
CPC分类号： G01P15/097 , G01L1/183 , G01L9/0019
摘要： At least one microbeam situated on a substrate, having a resonant frequency dependent on the strain on the microbeam which may be affected by the bending of the substrate. The beam or beams have sense and drive electrodes proximate to the beam or beams and form capacitors with a beam being the other electrode. The capacitance varies as the beam moves in vibration. The sense electrode is connected to an input of a transistor, such as the gate or base, and the drive electrode is connected to an output of the transistor. The transistor has a load impedance with a capacitive component to aid in the sustaining of vibration of the beam at a resonant frequency. A high ohm resistor is connected between the gate and the drain of the transistor to appropriately bias the gate. The bending of the substrate may be caused by a magnitude of a physical stimulus being measured. However, the bending of the substrate is not utilized nor desired in the filter and temperature sensing configurations of the invention. The frequency of resonance is an indication of the magnitude of the physical parameter. Variants of the sensor may be implemented with different placements of the sense and drive electrodes, and additional electronics as needed to implement the various configurations and microbeam geometry. Additional sense and/or drive electrodes and beams also may be incorporated in the transistor resonant microbeam sensor.
摘要翻译：位于衬底上的至少一根微束，具有取决于微束上的应变的共振频率，其可能受到衬底的弯曲的影响。光束或光束具有靠近光束或光束的感测和驱动电极，并形成具有作为另一电极的光束的电容器。电容随着光束在振动中的移动而变化。感测电极连接到诸如栅极或基底的晶体管的输入，并且驱动电极连接到晶体管的输出端。晶体管具有具有电容分量的负载阻抗，以有助于以共振频率维持波束的振动。一个高欧姆电阻连接在晶体管的栅极和漏极之间以适当地偏置栅极。衬底的弯曲可以由被测量的物理刺激的大小引起。然而，在本发明的过滤器和温度检测结构中，基板的弯曲不被利用或不期望。谐振频率表示物理参数的大小。传感器的变体可以通过感测和驱动电极的不同布置以及实现各种构造和微束几何形状所需的附加电子装置来实现。附加的感测和/或驱动电极和光束也可以并入晶体管谐振微束传感器中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式