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1. 发明专利

JPS5988822A SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JPS5988822A
公开(公告)日：1984-05-22
申请号：JP19759682
申请日：1982-11-12
申请人： HITACHI OME ELECTRONIC CO , HITACHI LTD
发明人： NANKOU SUSUMU , KAJIWARA HISASHI , NAGATOMO HIROTO , MAEJIMA HIROSHI , NAKAZAWA TOMIO , KADOTA KAZUYA
IPC分类号： H01L21/30 , G03F7/30 , H01L21/027
摘要： PURPOSE:To realize continuous processings for an object to be processed and thereby attain improvement in processing capability by continuously providing a development section, washing section and a drying section and by providing a liquid temperature control section which holds the temperature of developer to a constant temperature. CONSTITUTION:A wafer 1 is pushed out of a loader 3 and is moved to a developing tank 8 by a conveyer. Upon completion of development for the specified period within the developing tank 8, the conveyer operates conveying the wafer 1 to the washing tank 12. Thereby the wafer 1 is immersed in the pure water in the tank 12. When preliminary washing has completed in the tank 12, the wafer 1 is transferred to a holding frame 21 on the spinner 20 by the conveyer. The final washing is carried out and spin-drying is carried out. After the spin- drying, the wafer 1 is housed in a magazine 26 within an unloader 25. Meanwhile, the developer is controlled to the prescribed temperature by the liquid temperature controller 27 at the developing section 5.

2. 发明专利

DE3678868D1 未知
公开(公告)号：DE3678868D1
公开(公告)日：1991-05-29
申请号：DE3678868
申请日：1986-06-10
申请人： HITACHI LTD
发明人： ITO TETSUO , TANUMA MASAYA , NAKAGOMI YOSHIYUKI , KADOTA KAZUYA , KOBAYASHI KAZUNARI
IPC分类号： B05D7/00 , B05D1/32 , B05D1/40 , B05D3/06 , G03F7/16 , H01L21/027 , H01L21/30 , H01L21/302
摘要： In a photoresist process which comprises a process for spin-coating a substrate (7) with a resist (10), a process for transferring a mask pattern (4, 5) onto the coated resist film followed by exposure (8), and a developing process for forming a pattern on the substrate after the pattern (4, 5) has been exposed. When the developed pattern of the resist pulsates with the increase or decrease of parameters in the process of applying resist (10), the value of the parameter is set to a value that corresponds to an extreme value of the pulsation.

3. 发明专利

JPS6225256B2 失效
公开(公告)号：JPS6225256B2
公开(公告)日：1987-06-02
申请号：JP6879878
申请日：1978-06-09
申请人： HITACHI LTD
发明人： KADOTA KAZUYA
IPC分类号： H01L21/31 , C23C16/34 , H01L21/318

4. 发明专利

JPS61245530A PROCESSOR 失效
公开(公告)号：JPS61245530A
公开(公告)日：1986-10-31
申请号：JP8639085
申请日：1985-04-24
申请人： HITACHI LTD
发明人： NAGAO MAKI , KADOTA KAZUYA , HIROBE YOSHIMICHI
IPC分类号： H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To ensure uniformity in processing conditions over the whole processed object by providing a shield plate with a window opening between the object to be processed and plasma supply means and relatively displacing the shield plate and the object to be processed. CONSTITUTION:When a wafer 1 (object to be processed) has been placed on a lower electrode 7 and a process chamber 2 has been exhausted, an etching gas is introduced thereinto through a supply port 4 and a voltage is applied to an upper electrode 6 (plasma supply means), the lower electrode 7 and a shield plate 11, causing a plasma etching reaction. In this case, since the shield plate 11 operates as a grid electrode, an etching seed produced by the reaction between plasma and the etching gas is brought into contact only through a window opening 12 in the shield plate 11. Accordingly, an etching process is conducted only on a region of the wafer 1 opposing the window hole 12 in the shield plate 11. Therefore, the etching process state is uniform over this whole small region. When the process is terminated, the region of the wafer 1 opposite to the window hole 12 is displaced and the process is performed under the same condition.

5. 发明专利

JPS60167424A INSPECTING APPARATUS 失效
公开(公告)号：JPS60167424A
公开(公告)日：1985-08-30
申请号：JP2179384
申请日：1984-02-10
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： HIROBE YOSHIMICHI , KADOTA KAZUYA , NAGAO MAKI , SUGIMOTO ARITOSHI , AZUMA HIDEAKI , SATOU FUMIYOSHI , NAKAJIMA SHIYUU , OZAKI KATSUMI , UEHARA ICHIROU
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , G03F1/84 , H01L21/027 , H01L21/30 , H01L21/66
摘要： PURPOSE:To suppress or prevent attaching of foreign matter onto a test piece to improve reliability of inspection and to prevent a defect from occurring at the next process, by providing with a stage supporting the test piece with its surface oriented vertically, and by setting an optical system opposing the stage so that at least the optical axis of the object side is horizontal. CONSTITUTION:A wafer W which has been carried by an automatic handling means 17 is vacuum-attracted and supported vertically on the surface of the movable table 9. The wafer W is focused against the microscope 7 by moving the wafer W in the Z direction with the stage 5, and an operator can observe and inspect the entire surface of the wafer W with the microscope 7 by moving it so as to scan in both the X and Y directions. At the same time, the wafer surface is pictured by the ITV camera 16 and automatically inspected. Since the wafer W is always kept vertically during the inspection, foreign matter such as dust existing in the atmosphere hardly rides on the surface of the wafer W and hardly sticks to it, if the foreign matter falls.

6. 发明专利

JPS5996730A MARK ALIGNER 失效
公开(公告)号：JPS5996730A
公开(公告)日：1984-06-04
申请号：JP20616482
申请日：1982-11-26
申请人： HITACHI LTD
发明人： NAKAZAWA TOMIO , SATOU FUMIYOSHI , KADOTA KAZUYA
IPC分类号： H01L21/30 , G03F7/20 , G03F9/00 , H01L21/027
摘要： PURPOSE:To enable to perform a pattern positioning on a mask, a wafer and the like in an accurate and highly precise manner even when there is deviation in wafer measurements by a method wherein the mask is properly curved by adjusting the pressure inside the chamber member which is tightly contacted to the mask and the like, and the mask is corresponded to the expansion and to the contraction of the wafer by changing the projection measurements of the mask pattern. CONSTITUTION:The position of a wafer 3, namely the reference position of the wafer 3, is determined at the reference position of a mask 4 by operating an X-Y table 2. Then the positioning of the mask 4 and the wafer 3 is inspected at two points using a pair of alignment optical systems 18 and 19, and the amount of deviation thereof is detected. Ordinarily, the wafer is in a contracted state for the mask, a control valve 16 is controlled by a control section 17 based on the amount of deviation above-mentioned, and the interior of the chamber member 12 is formed into the prescribed vacuum pressure state. As a result, the mask 4 is warped inward of the member 12 as shown by a dotted line in the diagram due to differential pressure with the atmospheric air, and the projection measurements in plane direction of the mask pattern is substantially reduced, thereby enabling to perform an exposure with the pattern measurements corresponding to the contraction of the wafer 3.

7. 发明专利

JPS58210618A METHOD AND APPARATUS FOR REDUCED PROJECTION EXPOSURE 失效
公开(公告)号：JPS58210618A
公开(公告)日：1983-12-07
申请号：JP9311782
申请日：1982-06-02
申请人： HITACHI LTD
发明人： KADOTA KAZUYA
IPC分类号： G03B27/32 , G03F1/84 , H01L21/027 , H01L21/30 , H01L21/66
摘要： PURPOSE:To permit a reticle defect inspection to be effected with a reticle set at a reticle exposure position thereby to obtain a high reliability while suppressing a rise in a cost, by a method wherein in photographing, a picture surface to which the reticle pattern is to be transferred is located at the reticle exposure setting position so as to oppose to the pattern surface of the reticle, and a reduced projection exposure is effected according to the reticle after the photographing. CONSTITUTION:With a reticle 3 and a wafer 6 aligned with each other, a wafer 9 to which the reticle pattern is to be transferred is set under the pattern surface of the reticle 3 by means of a setting device 4. In this case, a picture surface 8 to which the reticle pattern is to be transferred, which is constituted by a resist material 10, is set under the pattern surface of the reticle 3 so that a proximity exposure will be realized. When an exposure light source 1 is actuated, a pattern 13 and all of defects 14, such as dusts and the like, on the reticle 3 are photographed so as to sensitize the resist material 10 of the wafer 9. Since the pattern surface of the reticle 3 and the resist material 10 are disposed in very close proximity to each other, a proximity exposure is effected. Accordingly, the image of the pattern and defects on the reticle 3 is clearly transferred to the picture surface 8, which is constituted by the resist material 10, without substantial magnification.

8. 发明专利

JPS5852645A METHOD AND DEVICE FOR DEVELOPMENT 失效
公开(公告)号：JPS5852645A
公开(公告)日：1983-03-28
申请号：JP14947181
申请日：1981-09-24
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： HIROBE YOSHIMICHI , KADOTA KAZUYA , NAKAZAWA TOMIO , NAGAO MAKI , TAGI YOUICHI
IPC分类号： G03F7/30
摘要： PURPOSE:To obtain a uniform, high-precision pattern by supplying a developer in a vapor state in the process of forming a fine pattern on a silicon substrate. CONSTITUTION:In a developing tank 11, a holding base 12 for holding a substrate 4 made of a silicon wafer upside down from above is provided. A device 14 for vaporizing a developer 15 is also provided in the developing tank 11. This developer 15 reacts chemically with exposed parts and unexposed parts of a photosensitive material on the substrate 15, and this developer 15 is vaporized by the device 14 to fill the developing tank 11. In this state, the substrate 4 held by the holding base 12 is treated by, for example, the cooling of a temperature regulator 19, and consequently the vapor of the developer 15 in the tank 11 is condensed to stick to the surface (reverse surface) of the substrate 4, covering the substrate surface uniformly. Consequently, the condensed developer 15 reacts chemically with a thin film of the photosensitive material on the substrate 4, thus developing a desired pattern.

9. 发明专利

JPS5817443A PHOTORESIST DEVELOPING METHOD AND ITS DEVICE 失效
公开(公告)号：JPS5817443A
公开(公告)日：1983-02-01
申请号：JP11503081
申请日：1981-07-24
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： NAKAZAWA TOMIO , KADOTA KAZUYA , HIROBE YOSHIMICHI , NAGAO MAKI , AZUMA HIDEAKI , TAGI YOUICHI
IPC分类号： H01L21/30 , G03F7/30 , H01L21/027
摘要： PURPOSE:To execute a uniform development extending over the whole surface of a wafer, by supplying a developing substance to the surface of the wafer by vapor phase, in case of development of photoresist. CONSTITUTION:In case of executing development, vapor or carrier vapor from a vapor or carrier vapor feed nozzle 7, and vapor of a developer from a developer feed nozzle 9 are fed into a developing chamber 6, respectively. Said vapor mixed with each other in the developing chamber 6, uniformly adheres onto the resist surface on a wafer 3 held on a wafer chuck 14, and development of the resist is executed. The mixing ratio of the water vapor or carrier vapor with the vapor of the developer can be adjusted so as to obtain an optimum development by adjusting flow rate adjusting valves 10 and 11. In this way, since a developing substance is fed by vapor phase, it does not occur that foreign matter adheres to the resist, or the resit peels off at the time of development, and a uniform development is obtained.

10. 发明专利

JP2011060061A Document information classification method and document information classification system 审中-公开
标题翻译：文件信息分类方法和文件信息分类系统
公开(公告)号：JP2011060061A
公开(公告)日：2011-03-24
申请号：JP2009209968
申请日：2009-09-11
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SASAKI YASUHIKO , KADOTA KAZUYA
IPC分类号： G06F17/30
摘要： PROBLEM TO BE SOLVED: To provide an explicit and efficient method for determining similarity in classifying documents on the basis of the similarity of content.
SOLUTION: The number of common keywords between documents is used as a threshold to inspect and classify group identity of directly or indirectly coupled documents. The documents are classified while changing the common keyword threshold stepwise, to classify a whole document group while suppressing the number of documents in each group and the total number of groups.
COPYRIGHT: (C)2011,JPO&INPIT

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