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1. 发明专利

JPS5877246A FORMATION OF MULTILAYER WIRING STRUCTURE 失效
公开(公告)号：JPS5877246A
公开(公告)日：1983-05-10
申请号：JP17459081
申请日：1981-11-02
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： ISHIDA MASAKATSU , KATOU TOKIO
IPC分类号： H01L21/3213 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain a multilayer wiring being fine and moreover having no disconnection at a step part by a method wherein a semiconductor substrate is inclined by the prescribed angle, and dry etching of an insulating film is performed making a conductive film as a mask. CONSTITUTION:A first layer Al wiring 3 is provided on an insulating layer 2 on an Si substrate 1, it is covered with a polyimide film 4, and an Mo film 5 is etched to form an opening 7 using a resist mask 6. Then the resist 6 is removed, the whole of the wafer 8 is inclined by the prescribed angle, and when plasma etching is performed from the upper side, a penetrating hole 9 made to coincide with the opening 7 is formed in the film 4, and the side wall is provided with taper 10. Al is evaporated on the whole surface in condition that the Mo film 5 is left as it is, and is etched in the prescribed pattern to form a second layer Al wiring 11 connected to the lower layer wiring 3 through the pentrating hole 9. By this constitution, because the fine process is possible, and moreover taper can be formed in the penetrating hole, disconnection at the step part is not generated.

2. 发明专利

JPS6035515A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6035515A
公开(公告)日：1985-02-23
申请号：JP14382083
申请日：1983-08-08
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , KATOU TOKIO
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the dampproof property of the semiconductor device having a multilayer interconnection structure by a method wherein the guide to be used for positioning of the second layer wiring and the through hole of the second layer insulating film and the second wiring are formed simultaneously. CONSTITUTION:A semiconductor element region 2 is formed on the surface of a semiconductor substrate 1, and the first layer wiring 3 is formed extending to an SiO2 film 10. The first layer insulating film 4 of SiO2 or PSG is formed, and a concavity 12 is provided at the position of a guide together with a through hole 11 by performing an etching. Aluminum is vapor-deposited, the second layer wiring 5 is formed by patterning and, at the same time, a guide 7 is formed on the concavity 12. The second layer insulating film 6 of SiO2 or PSG is formed, and a hole 18 with which the guide 7 will be exposed is provided. When moisture 9 is infiltrated through the hole 18, the guide 7 is positioned on the oxide film 10, and the second layer wiring 5 is located on a different levelled interlayer insulating film 4, and this prevents the infiltration of the moisture 9, thereby enabling to improve the dampproof property of the semiconductor device for the wiring.

3. 发明专利

JPS6039847A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6039847A
公开(公告)日：1985-03-01
申请号：JP14652583
申请日：1983-08-12
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： TEZUKA IZUMI , ISHII SHIGEO , YUGAWA KOUICHI , KONDOU SHIZUO , KUBO MUTSUO , KATOU TOKIO , INABA TOORU
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/88
摘要： PURPOSE:To improve the moisture resistance of a first-layer aluminum wiring, and to remove a disconnection due to corrosion of the wiring by forming both a first layer wiring and a second layer wiring by aluminum containing a different substance. CONSTITUTION:First layer wirings 3 are formed by patterning aluminum containing a substance such as silicon by approximately 2% on an oxide film 2, and a first-layer insulating film 4 is formed in thickness sufficiently coating the first layer wirings with polyimide resin. Second layer wirings 5 consisting of aluminum containing silicon are connected to the first layer wirings 3 through holes 6 partially bored to the first-layer insulating film 4. Accordingly, since both wiring use aluminum containing silicon, corrosion in the grain boundaries of aluminum in the first layer wirings in the peripheral section of a chip can be prevented, and a defective disconnection can be improved. The same effect can be obtained by mixing a proper amount of a metallic element, such as nickel, molybdenum, titanium, palladium, etc. as an impurity to be contained in aluminum.

4. 发明专利

JPS60247949A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS60247949A
公开(公告)日：1985-12-07
申请号：JP10256684
申请日：1984-05-23
申请人： HITACHI LTD
发明人： OOKUBO TOSHIO , KATOU TOKIO , MATSUZAWA MANABU
IPC分类号： H01L21/768 , H01L21/312 , H01L23/522
摘要： PURPOSE:To reduce the amount of working hours in processing an insulation film which covers the wiring of semiconductive element by a method wherein a layer interposed insulation film and the like, which is performed patterning process, is obtained by a photosensitive polyimide resin by patterning and by heat- treatment of a polyimide system resin. CONSTITUTION:A semiconductive element 12 is formed on a main surface of semiconductive substrate 1 and single or plural layers 14, which are connected to this semiconductive element 12, are formed and then an insulation film 16 covers between these wiring layers or/and on the wiring layer. In the processes that a part of this insulation film 16 is treated to obtain connection between wiring layers or a part of the wiring layer is exposed, a photosensitive polyimide is used in at least a part of the insulation film 16, and the photosensitive polyimide is processed before curing. By doing this, the amount of working hours is reduced as well as eliminating damage from the wiring during the insulation film processing.

5. 发明专利

JPS60247931A METHOD FOR TREATMENT OF PHOTOSENSITIVE HEAT-RESISTING INSULATING FILM 失效
公开(公告)号：JPS60247931A
公开(公告)日：1985-12-07
申请号：JP10256184
申请日：1984-05-23
申请人： HITACHI LTD
发明人： KATOU TOKIO , KATAOKA FUMIO , SHIYOUJI FUSAJI , OOKUBO TOSHIO
IPC分类号： H01L23/29 , H01L21/312 , H01L23/31
摘要： PURPOSE:To manufacture a reliable semiconductor device by a method wherein, in the heat treatment process to be performed after patternization of a photosensitive polyimide film, the condition of heat treatment when the film is brough into a polyimide state is optimized. CONSTITUTION:After an insulating film 3 and an aluminum wiring 5 have been formed on the surface of the substrate 1 whereon a semiconductor element is formed, a photosensitive polyimide film 6 is coated on the whole surface. Then, after the polyimide film 6 has been selectively exposed and developed, a polyimide film 9 which is patternized and hardened by heat treatment is formed. In the above-mentioned heat treatment, the temperature and the time of the final heat treatment are set at the optimum value corresponding to the degree of the required heat resistivity. As a result, the heat-resisting property of the polyimide film and the electric characteristics of the semiconductor device using the polyimide film can be excellently harmonized, thereby enabling to obtain the semiconductor device of high reliability.

6. 发明专利

JPS58197842A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS58197842A
公开(公告)日：1983-11-17
申请号：JP7997482
申请日：1982-05-14
申请人： Hitachi Ltd
发明人： KATOU TOKIO
IPC分类号： H01L21/768 , H01L21/31 , H01L23/522
摘要： PURPOSE:To improve adhesive property, and to enhance the reliability of the resin seal type semiconductor device by using Al2O3 formed through a sputtering method to be used as adhesives for high phosphorus concentration glass and a polyimide resin. CONSTITUTION:An insulating film 7 consisting of a SiO2 film and PSG (phosphorus-silicate glass) formed to the surface of the SiO2 film on emitter diffusion is formed to the surface of a Si substrate 1, one part of the film 7 is removed and Al is evaporated in the thickness of 1.0-1.5mum, and Al wiring 8 as a first layer is formed through patterning. Al2O3 is coated through the sputtering method to form an Al2O3 film 9 of 0.1-0.3mum thickness to the whole surface, and the film 9 is coated with the polyimide group resin in the thickness of 0.5- 2mum to form an inter-layer insulating film 10. One part of the inter-layer insulating film 10 is removed by an organic etching liquid such as hydrazine, and Al2O3 under the film 10 is removed through sputtering etching, etc. to form a through-hole section 14. Al is evaporated to form second layer Al wiring 11 of 1.5-3mum thickness through patterning. A passivation insulating film 13 made of the polyimide group resin as a second layer coating the whole surface is formed.
摘要翻译：目的：为了提高粘合性，通过使用通过溅射法形成的Al 2 O 3来提高树脂密封型半导体器件的可靠性，以用作高磷浓度玻璃和聚酰亚胺树脂的粘合剂。构成：在Si衬底1的表面上形成由SiO衬底和形成于发射极扩散层上的SiO 2膜表面的PSG（磷硅酸盐玻璃）构成的绝缘膜7，一部分膜7除去， Al以1.0-1.5μm的厚度蒸发，通过图案化形成作为第一层的Al布线8。通过溅射法涂覆Al2O3以在整个表面上形成0.1-0.3μm厚的Al 2 O 3膜9，并且将膜9涂覆在厚度为0.5-2μm的聚酰亚胺基树脂上以形成层间绝缘膜通过诸如肼的有机蚀刻液除去层间绝缘膜10的一部分，通过溅射蚀刻等除去膜10下方的Al 2 O 3，形成通孔部分14.将Al蒸发至通过图案化形成1.5-3μm厚度的第二层Al布线11。形成由聚酰亚胺基树脂作为覆盖整个表面的第二层制成的钝化绝缘膜13。

7. 发明专利

JPS58158945A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58158945A
公开(公告)日：1983-09-21
申请号：JP4079382
申请日：1982-03-17
申请人： HITACHI LTD
发明人： KATOU TOKIO
IPC分类号： H01L23/52 , H01L21/31 , H01L21/3205
摘要： PURPOSE:To manufacture the highly moisture-resistant IC by a method wherein a polyimido base resin film as a polymer is provided on a semiconductor substrate and the metal wiring layer containing semiconductor or any other metal is laminated to be sealed with resin. CONSTITUTION:The N epitaxial layer on P type Si substrate wherein N layer is embedded is separated by P layer to form a bipolar transistor and the island region providing Al wirings 13-15 through SiO2 film 4 and Al-Si alloy wiring layer 17 is further provided utilizing PIIQ resin (polyimide base resin) 16 as an interlayer insulating film. The layer 17 is again coated with PIIQ 18 to be finished. Said layer 17 may be added with Ni, B and others in addition to Al. The Si addition shall be limited to the range of 0.1-10wt%. The PIIQs 16, 18 as polymer are provided with more elasticity than that of SiO2 absorbing thermal stress in case of sealing not to be exfoliated from wiring layer. Besides, Al crystalization is disturbed by PIIQ and the crystalized particles are prevented from expanding by addition of Si remarkably retarding the corrosion due to water permeation. Through this constitution, the highly moisture resistant IC may be manufactured.

8. 发明专利

JPS56150832A ELECTRONIC DEVICE 失效
公开(公告)号：JPS56150832A
公开(公告)日：1981-11-21
申请号：JP5413380
申请日：1980-04-25
申请人： HITACHI LTD
发明人： KATOU TOKIO
IPC分类号： H01L23/29 , H01L21/312 , H01L23/31
摘要： PURPOSE:To enable to obtain the passivation structure having excellent waterproofing and chemicalproofing properties by a method wherein a photoresist film is formed on the protective polyimide resin film of a substrate through the intermediary of the reaction film which reacts to the photoresist film and the polyimide. CONSTITUTION:The polyimide resin film 3 is formed on the substrate 1, whereon a wiring 2 has been formed, as a protective film. On this film 3, the photoresist film 5 is formed through the reactive film 6 which reacts to said photoresist film 5 and the polyimide. According to the structure thus obtained, the photoresist is dissolved by the parting agent for resist, for instance, the organic solvent having the principal ingredient of benzenesulfoncarboxylic acid, and on the other hand, the polyimide is dissolved by hydrazine hydrazide. But said reaction film 6 has the dissolving speed of 1/10 or below to the dissolving speed of the above-mentioned two chemicals, thereby enabling to sharply improve the chemicalproofing property. Also, this reaction film 6 has an excellent waterproofing property.

9. 发明专利

JPS5619639A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5619639A
公开(公告)日：1981-02-24
申请号：JP9501279
申请日：1979-07-27
申请人： HITACHI LTD
发明人： TOMOSAWA AKIHIRO , KIYONO MASAMI , SAKAMOTO ISAO , SAKAGUCHI JIROU , KATOU TOKIO , MEGURO RIYOU
IPC分类号： H01L21/60
摘要： PURPOSE:To flatten the peripheral edge of a pad and prevent improper bonding of wires to the semiconductor device by increasing the size A of an opening for a lower insulator film on a substrate larger than the size B of an opening for an insulating film of an upper layer and the size A of the opening of the lower layer larger than the that of the electrode pad. CONSTITUTION:An SiO2 film 2 and PSG film 3 are formed on the Si substrate 1. The first aluminum film 4 becoming a wiring terminal forms a square having one side D, the second aluminum film 6 forming the bonding surface has one side A, a square opening having one side A is perforated at the organic resin film 5 of the lower layer, and a square opening having one side B is formed at the organic resin film 7 of the upper layer. Their sizes may satisfy the relationship of A>C>B>D, where the horizontally moving directions of the capillary of a bonder are X, Y and Y'. This configuration remarkably reduces the relative height of the upper surface of the resin on the peripheral edge of the bonding pad and the aluminum main surface so as to largely reduce the probability of failing the bonding therebetween.

10. 发明专利

JPS553611A RESIN FLASH ELIMINATING METHOD 失效
公开(公告)号：JPS553611A
公开(公告)日：1980-01-11
申请号：JP7419478
申请日：1978-06-21
申请人： HITACHI LTD
发明人： SUZUKI AKIRA , KATOU TOKIO
IPC分类号： H01L23/50 , H01L21/56
摘要： PURPOSE:Resin flashes which may be produced when a resin mouldng is carried out by inserting electronic parts into a metal mould can be easily removed by taking off a covering provided in advance on the portion wherein resin flashes may be produced after moudling, together with the resin deposited thereon during moulding. CONSTITUTION:Resin moulding is conducted by mounting a metallic header 12 on a resin package 10 having projection leads 16 and inserting it into a metal mould. At this juncture, the surface of the header 12 is exposed to the outside of the package 10, and the surface of the header 12 is adhered closely to the inside of cavity within the metal mould. However, an undesired gap is formed therebetween due to errors in dimension or transformation, and a resin will enter this cap to produce the resin flash 18 to be removed afterwards. Consequently, the flash 18 can be removed together with a covering after moulding, if there is provided such a covering as indicated by 14, made of photosensitive resist or photosensitive polyimide resin, in advance on the surface of the header 12 on which the flash 18 may be deposited.

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