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1. 发明专利

JPS6039847A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6039847A
公开(公告)日：1985-03-01
申请号：JP14652583
申请日：1983-08-12
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： TEZUKA IZUMI , ISHII SHIGEO , YUGAWA KOUICHI , KONDOU SHIZUO , KUBO MUTSUO , KATOU TOKIO , INABA TOORU
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/88
摘要： PURPOSE:To improve the moisture resistance of a first-layer aluminum wiring, and to remove a disconnection due to corrosion of the wiring by forming both a first layer wiring and a second layer wiring by aluminum containing a different substance. CONSTITUTION:First layer wirings 3 are formed by patterning aluminum containing a substance such as silicon by approximately 2% on an oxide film 2, and a first-layer insulating film 4 is formed in thickness sufficiently coating the first layer wirings with polyimide resin. Second layer wirings 5 consisting of aluminum containing silicon are connected to the first layer wirings 3 through holes 6 partially bored to the first-layer insulating film 4. Accordingly, since both wiring use aluminum containing silicon, corrosion in the grain boundaries of aluminum in the first layer wirings in the peripheral section of a chip can be prevented, and a defective disconnection can be improved. The same effect can be obtained by mixing a proper amount of a metallic element, such as nickel, molybdenum, titanium, palladium, etc. as an impurity to be contained in aluminum.

2. 发明专利

JPS62123773A SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPS62123773A
公开(公告)日：1987-06-05
申请号：JP26242585
申请日：1985-11-25
申请人： HITACHI LTD
发明人： AMAMIYA SETSURO , KUBO MUTSUO
IPC分类号： H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To lower a tunnel barrier between a gate electrode and a substrate with excellent reproducibility without relying on a work accuracy and improve writing efficiency by providing a step shape gate electrode and a step-shaped insulating film between the gate electrode and the substrate. CONSTITUTION:A step is formed in the 1st insulating film 2a provided between a floating gate electrode 6 and a substrate 1 and the part where the thickness is small is provided over the part across a channel region and a drain region 4. At the same time, the floating gate electrode 6 is so formed as to have a step along the top surface of the 1st insulating film 2a to form the part 6a and the part 6b on both sides of the step 6c. With this constitution, an electrostatic capacitance between the gate electrode 6 and the substrate 1 can be reduced and at the same time a tunnel barrier can be lowered. Therefore, charge injection into the gate electrode 6 can be easy while a voltage applied to the gate electrode 6 by potential dividing being maintained at a high level.

3. 发明专利

JPS5947737A Measuring apparatus for semiconductor device 失效
标题翻译：半导体器件测量装置
公开(公告)号：JPS5947737A
公开(公告)日：1984-03-17
申请号：JP15665882
申请日：1982-09-10
申请人： Hitachi Ltd
发明人： KUBO MUTSUO
IPC分类号： G01R1/073 , H01L21/66
CPC分类号： H01L22/00
摘要： PURPOSE:To prevent generation of damage of semiconductor by sensor spine and simplify adjusting operation by eliminating sensor spine through common use of probe spine for measuring electrical characteristic of semiconductor device and detecting position of measuring part. CONSTITUTION:Spines 11, 12 of probe spines 11-13 are commonly used as the sensor spine. After defining the positional relation between bonding pad and probe spine, it is used as the probe spine by electrically separating it from the sensor circuit connected to the sensor spine. This prober apparatus detects wafers 1 from existence of current. Namely, when the stage is located at the lower position, a prober current does not flow into the probe spine, but when the stage is located at the upper position and wafer is in contact with probe spines 11, 12, a sensor current flows across the probe spines. This sensor current causes a relay 14 to operate in order to separate from the sensor circuit 15. During this operation, the stage 8 moves upward and stops at the specified height. A little layer, a prober current flows into the prober spines 11, 12, 13 and measurement starts.
摘要翻译：目的：为了防止传感器脊柱产生半导体损坏，通过消除传感器脊柱，通过使用探头脊测量半导体器件的电气特性和测量部位的位置来简化调整操作。构成：棘爪11-13的脊11,12通常用作传感器脊。在定义了焊盘和探针脊柱之间的位置关系后，将其与传感器电路连接的传感器电路进行电气分离，将其用作探针脊柱。该探测装置检测晶片1是否存在电流。也就是说，当台架位于较低位置时，探针电流不流入探头脊，但是当台架位于上部位置并且晶片与探针棘爪11,12接触时，传感器电流流过探针刺。该传感器电流使继电器14工作以便与传感器电路15分离。在此操作期间，平台8向上移动并在指定的高度停止。一小层，探测器电流流入探测器刺11,12,13，测量开始。

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