专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH10125846A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10125846A
公开(公告)日：1998-05-15
申请号：JP27649196
申请日：1996-10-18
申请人： HITACHI LTD , HITACHI VLSI ENG , HITACHI CABLE
发明人： SHIMOISHI TOMOAKI , MIYAZAKI CHUICHI , NAKAGAWA CHIKAKO , ONDA MAMORU
IPC分类号： H01L23/12 , H01L23/50
摘要： PROBLEM TO BE SOLVED: To make substrate targets recognizable from the back side in a semiconductor chip bonding step and from the front side in a lead-to-electrode bonding step by forming the substrate targets extruding out on a flexible wiring board. SOLUTION: The semiconductor device comprises a semiconductor chip 1 and flexible wiring board 2 bonded to the chip 1 through an elastic adhesive with two substrate targets 3a, 3b on the flexible wiring board 2 so as to extrude out from the chip 1 adhered to the wiring board 2. The targets 3a, 3b are visually recognizable from the front and back sides, so that they are recognizable from the back side in a semiconductor chip bonding step and from the front side in a step of bonding leads 2d to electrodes 1a.

2. 发明专利

JPH10144723A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10144723A
公开(公告)日：1998-05-29
申请号：JP31553496
申请日：1996-11-12
申请人： HITACHI LTD , HITACHI VLSI ENG , HITACHI CABLE
发明人： SHIMOISHI TOMOAKI , AKIYAMA YUKIJI , ONDA MAMORU
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To prevent stress from remaining in a inner lead subsequent to a bonding. SOLUTION: In a connection process, a chip 10 is bonded to a tape carrier 1 with an inner lead 4 and outer leads 5, which are laid on one main surface of the chip 10, via an insulating film 8. A notch 6 is formed in the inner lead 4 at a biased position on the inner lead 4. In an inner lead bonding process, the short part 4a of the inner lead 4 is tapped with a bonding tool 13, is cut and thereafter, a cut part piece on the side of the long part 4 of the inner lead 4 is curved by the tool 13 and is thermally pressure-bonded to an electrode pad 12. In a resin sealing process, a silicone rubber is potted in a window hold 3 formed in a carrier main body 2 and a resin-sealed part 14 is formed. Bumps 15 are respectively formed on bump formation holes 7 formed in the outer leads 5. Accordingly, as a stress can be prevented from remaining in the inner lead subsequent to the bonding, the inner lead can be prevented from being disconnected by a thermal stress to act on a CSB(chip size package) and an IC.

3. 发明专利

JP2004197009A Thermosetting resin, method for producing the same, and its product 审中-公开
公开(公告)号：JP2004197009A
公开(公告)日：2004-07-15
申请号：JP2002369159
申请日：2002-12-20
申请人： Hitachi Cable Ltd , Hitachi Ltd , 日立電線株式会社 , 株式会社日立製作所
发明人： SUZUKI MASAHIRO , TAKAHASHI AKIO , TAKAHASHI KEN , ONDA MAMORU , SATO TAKASHI , ITO YUZO , KOIZUMI TOYOHARU
IPC分类号： C08L63/00 , C08K3/00 , C08L35/00 , C08L83/04 , H01L23/29 , H01L23/31
CPC分类号： H01L24/29 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/83192 , H01L2224/92125 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a solventless thermosetting resin composition, which is excellent in workability such as casting because it is liquid of low viscosity at room temperature(25°C) and gives, after curing, a cured resin product excellent in heat resistance, especially in mechanical properties at a higher temperature, a method for producing the same and its product. SOLUTION: Essential components of the thermosetting resin composition are an epoxy resin(a), a reaction product(b) of water and an organic silicon compound shown by formula (1) (wherein R is an organic group containing a functional group which makes addition reaction with the epoxy resin and R' is a methyl or ethyl group), a bismaleimide compound(c) shown by formula (2) (wherein A is a bivalent organic group having at least two carbon atoms) and a curing agent(d). COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2001358255A SEMICONDUCTOR PACKAGE, MANUFACTURING METHOD THEREFOR, AND INSULATING TAPE SUBSTRATE FOR SEMICONDUCTOR PACKAGE 失效
公开(公告)号：JP2001358255A
公开(公告)日：2001-12-26
申请号：JP2000177357
申请日：2000-06-13
申请人： HITACHI LTD , HITACHI CABLE
发明人： MORITA TOSHIAKI , KAJIWARA RYOICHI , KOIZUMI MASAHIRO , TAKAHASHI KAZUYA , ONDA MAMORU , SATO TAKUMI , NISHIMURA HIDETO , SATO TAKASHI
IPC分类号： H01L23/12 , H01L21/60 , H01L21/607
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor package by which the electrode of a semiconductor chip is sturdily bonded to the metal wiring of an insulating tape substrate without damage, and the insulating tape substrate for the semiconductor package. SOLUTION: When a plurality of electrode pads 2 formed on a semiconductor chip 1 are directly connected to a plurality of metal wirings 5 formed on an insulating tape substrate 7 mounted on the semiconductor chip 1, the metal wirings 5 are made of a copper alloy having a Vicker's hardness of from 60 to 100 and plated with gold of from 0.01 μm to 0.8 μm in thickness. The metal wirings 5 are bonded to the electrode pads 2 by applying heat and load and transverse ultrasonic vibrations of a frequency of 100 kHz and an amplitude of 1.5 μm or less so that an intermetallic compound made of bonded both metals is formed at the outer peripheral portion and the center portion of the connection interface between the metal wirings 5 and the electrode pads 2.

5. 发明专利

JP2000003939A SEMICONDUCTOR DEVICE ADHESIVE FILM 失效
公开(公告)号：JP2000003939A
公开(公告)日：2000-01-07
申请号：JP15603699
申请日：1999-06-03
申请人： HITACHI LTD , HITACHI CABLE
发明人： NAGAI AKIRA , EGUCHI KUNIYUKI , OGINO MASAHIKO , SEGAWA MASANORI , ISHII TOSHIAKI , TSUYUNO ENJIYOU , KOKADO HIROYOSHI , HATTORI RIE , MORISHIMA SHIN , ANJO ICHIRO , TSUBOSAKI KUNIHIRO , MIYAZAKI CHUICHI , KITANO MAKOTO , ONDA MAMORU , OKABE NORIO
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To contrive to enhance reflow-resistant characteristics, by a method wherein, by use of a film material when adhering a wiring tape to a semiconductor element in an insulative manner, a specified modulus of elasticity is made in the reflow temperature region. SOLUTION: In a step of forming an external terminal 2.5 by a solder ball, etc., for connecting with a mounting substrate, or a solder reflow step for mounting a semiconductor element 2.3 on the mounting substrate, since a reflow temperature is processed at a high temperature of 200 to 250 deg.C, moisture is evaporated in a moisture absorbed semiconductor device, and a film material swells with the vapor pressure, with the result that a foaming atmosphere occurs, and defects such as voids, releasing, or the like occur. For this reason, as physical properties of an adhesive film material 2.2, a modulus of elasticity in a temperature region (200 to 250 deg.C) of mounting reflow conditions is set to be 1 Mpa or more. Thus, it is possible to enhance reflow-resistant characteristics.

6. 发明专利

JP2000003937A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000003937A
公开(公告)日：2000-01-07
申请号：JP15603799
申请日：1999-06-03
申请人： HITACHI LTD , HITACHI CABLE
发明人： NAGAI AKIRA , EGUCHI KUNIYUKI , OGINO MASAHIKO , SEGAWA MASANORI , ISHII TOSHIAKI , TSUYUNO ENJIYOU , KOKADO HIROYOSHI , HATTORI RIE , MORISHIMA SHIN , ANJO ICHIRO , TSUBOSAKI KUNIHIRO , MIYAZAKI CHUICHI , KITANO MAKOTO , ONDA MAMORU , OKABE NORIO
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To improve resistance to reflow, by electrically connecting a tape material having a wiring layer to a semiconductor device, by forming thereon an external terminal electrically connected to a packaging substrate, and by using a film material as a material bonding the wiring tape material to the semiconductor device dielectrically. SOLUTION: An external terminal 2.5 electrically connected to a packaging substrate is arranged on a wiring tape material 2.1, and a film material 2.2 is used as a material for bonding the wiring tape material 2.1 to a semiconductor device 2.3 in a dielectric state. Since a reflow temperature is as high as 200 deg.C to 250 deg.C, moisture is vaporized from a semiconductor and the film material 2.2 is swelled by a vapor pressure to generate a bubbling phenomenon and to produce defects such as void and separation. Therefore, a material is used whose elastic modulus keeps 1 MPa or more in a temperature range of packaging reflow conditions (200 deg.C to 250 deg.C). This can produce a good result in resistance to reflow.

7. 发明专利

JPH1197492A THIN FILM WIRING BOARD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1197492A
公开(公告)日：1999-04-09
申请号：JP25320697
申请日：1997-09-18
申请人： HITACHI LTD , AKITA DENSHI KK , HITACHI CABLE
发明人： AKIYAMA YUKIHARU , ONISHI TAKEHIRO , SHIMADA NORITOSHI , NISHIMURA ASAO , ANJO ICHIRO , OKABE NORIO , KAMEYAMA YASUHARU , ONDA MAMORU
IPC分类号： H01L21/60 , H01L23/50 , H05K3/00
摘要： PROBLEM TO BE SOLVED: To increase a usable life of a cutter blade in a cutting die that cuts lead wires of chip-sized thin film boards used for a semiconductor device and improve manufacturability efficiency of the thin film boards. SOLUTION: This board comprises two openings 4e that exposes electrode pads of a semiconductor chip, a board body 4a having wiring 4d, and a board protrusion part 4b that protrudes to outer surroundings of the board body 4a and the openings 4e. Therein, one end of the wiring 4d is connected to a lead wire 4c installed on the openings 4e and the other end is electrically connected to a bump land. In an interconnection pattern 4m, in which each lead 4c is interconnected and arranged on the openings 4e, a section 4q of a residual pattern 4p formed in the side of the board protrusion part 4b is formed flat by convex stamping wiring part 4n using die cutting, which includes a region with the interconnection pattern 4m and the leads 4c, and separating to each of the lead 4c.

8. 发明专利

JPH1041357A TAPE CARRIER FOR SEMICONDUCTOR DEVICE, TAPE CARRIER TYPE SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1041357A
公开(公告)日：1998-02-13
申请号：JP19660896
申请日：1996-07-25
申请人： HITACHI CABLE , HITACHI LTD
发明人： OKABE NORIO , KAMEYAMA YASUHARU , TAGA KATSUTOSHI , ONDA MAMORU , ANJO ICHIRO
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To prevent the chip damage, without increasing the thickness of Au plating on inner leads. SOLUTION: The semiconductor device tape carrier 10 has a conductor lead pattern 13 on one surface of an insulation film 12. The pattern 13 is made from a soft Cu foil of 130 or less in Vickers hardness. The inner leads 13a of the lead pattern 13 relax the stress at bonding by themselves to thereby prevent the chip damage. Since an Au plating 15 on the inner leads 13a is not made thick beyond need, the cost can be reduced.

9. 发明专利

JPH1041345A TAPE CARRIER FOR SEMICONDUCTOR DEVICES 失效
公开(公告)号：JPH1041345A
公开(公告)日：1998-02-13
申请号：JP19670596
申请日：1996-07-25
申请人： HITACHI CABLE , HITACHI LTD
发明人： KAMEYAMA YASUHARU , OKABE NORIO , TAGA KATSUTOSHI , ONDA MAMORU , ANJO ICHIRO
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To make forming, without breaking inner leads or cracking at bonding. SOLUTION: The tape carrier comprises an insulation film 1 having a center device hole 3 and inner lead 11 which is mounted on one side of the film 1 and protrudes by specified lengths into the device hole 3. The carrier has a lead thickness-variable part 11a to continuously reduce the strength toward the top end of the lead 11 exposed in the hole 3. This part 11a disperses a stress when the inner lead 11 is pressed to prevent it from bending or cracking.

10. 发明专利

JPS55161061A CHEMICAL PLATING METHOD FOR INNER FACE OF METAL PIPE 失效
公开(公告)号：JPS55161061A
公开(公告)日：1980-12-15
申请号：JP6810979
申请日：1979-05-31
申请人： HITACHI CABLE , HITACHI LTD
发明人： YAMAGISHI RIYOUZOU , YOSHIOKA OSAMU , ONDA MAMORU , ISHIKAWA TETSUO
IPC分类号： C23C18/16 , C23C6/00 , C23C18/31 , C23C18/40 , G21C3/20
摘要： PURPOSE:To prevent the occurrence of plating roughness based on the turbulent flow of plating liquid or ununiformity of plating thickness, by standing connecting pipe having the same inner diameter between the end part of metal pipe, at the time of applying chemical plating of copper on the inner face circulating nonelectrolytic copper plating liquid on the inner face of the metal pipe. CONSTITUTION:The connecting pipe 9 having the inner diameter of the same dimension to the metal pipe 1, is placed on the end part of the pipe 1 to be applied copper plating on the inner face and the outer circumference is supported by the silicone rubber hose 8. The L-shaped joint 2 made of plastics etc. which is not contaminated by plating liquid and also, not plated, is connected with the other end of the connecting pipe 9 and nonelectrolytic plating of copper is applied on the inner face of the pipe 1 by circulating nonelectrolytic copper plating liquid through the polyethylene pipe 4. On this occasion, turbulent flow of the plating liquid is not produced because the inner diameter of the pipe 1 and the pipe 9 have the same dimension and plating roughness or ununiformity of plating thickness is not produced on the end part of the pipe 1 by the turbulent flow of the plating liquid.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式