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1. 发明专利

JPS60262449A LEAD FRAME FOR SEMICONDUCTOR 失效
公开(公告)号：JPS60262449A
公开(公告)日：1985-12-25
申请号：JP11867984
申请日：1984-06-08
申请人： HITACHI LTD , HITACHI CABLE
发明人： WAKASHIMA YOSHIAKI , YOSHIOKA OSAMU , YAMAGISHI RIYOUZOU , OKABE NORIO , NAGAYAMA SADAO
IPC分类号： H01L23/50 , H01L23/495
摘要： PURPOSE:To improve heat-dissipating properties and resin sealing properties by forming an alloy plating layer having excellent oxidation resistance and adhesive properties with a resin onto a base body for a lead frame and partially shaping an Au plating layer onto said layer. CONSTITUTION:An Ni-Sn alloy plating layer 13 is shaped onto a base body 1 consisting of a band plate made of Cu as a foundation layer, and Au plating layers 2 are formed partially to a semiconductor element fixing section 4 in the upper section of the alloy plating layer 13 and functioning sections containing internal lead terminal sections. When an AC package is manufactured by using such a lead frame, an Si pellet 3 is placed on the layer 2 on the element fixing section 4, and Au and Si are joined in a eutectic manner. The pellet 3 and the internal lead terminal sections are connected and wired by gold wires 5, and the whole is sealed by a molding resin 21. Either one of a Co-Sn or Ni-Co-Sn alloy may also be employed as the layer 13. According to the constitution, adhesive properties with the resin can be improved even when a Cu group metal is used as the base body.

2. 发明专利

JPS59214247A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59214247A
公开(公告)日：1984-12-04
申请号：JP8768583
申请日：1983-05-20
申请人： Hitachi Cable Ltd , Hitachi Ltd
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI , SATOU HAJIME , YAMAGISHI RIYOUZOU
IPC分类号： H01L21/52 , H01L23/492 , H01L23/495 , H01L23/50 , H01L23/48 , H01L21/58
CPC分类号： H01L23/49582 , H01L23/4924 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L2224/32245 , H01L2224/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83193 , H01L2224/83455 , H01L2224/83801 , H01L2224/92247 , H01L2924/01029 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PURPOSE:To enhance reliability of pellet bonding through the reduction of cost thereof by forming a tin plated layer through a lower plated layer to the upper part of pellet fitting part of substrate. CONSTITUTION:A nickel-plated layer 17 which prevents diffusion of copper material of frame 11 to the direction of pellet is provided at a lower plated layer on a tab 16 which is a pellet fitting area of lead frame 11. A tin layer 18 which is well wetable with solder is formed on the plated layer 17. When a semiconductor pellet 12 is placed on a fusible tin layer 18 through a soluble solder foil 19 and is then caused to make scribe motion, the pellet 12 is securely welded on the tab 16.
摘要翻译：目的：通过将下镀层形成镀锡层到基板的芯片安装部的上部，通过降低成本来提高芯片接合的可靠性。构成：防止框架11的铜材料向颗粒方向扩散的镀镍层17设置在作为引线框11的芯片嵌合区域的突片16的下镀层上。锡层18是在电镀层17上形成可焊接的良好的润湿剂。当将半导体颗粒12通过可溶性焊锡箔19放置在易熔锡层18上，然后使其进行划线时，将颗粒12牢固地焊接在突片16上。

3. 发明专利

JPS57169097A PLATING METHOD OF LONG PIPE 失效
公开(公告)号：JPS57169097A
公开(公告)日：1982-10-18
申请号：JP5247181
申请日：1981-04-09
申请人： HITACHI CABLE , HITACHI LTD
发明人： YAMAGISHI RIYOUZOU , YOSHIOKA OSAMU , ISHIKAWA TETSUO
IPC分类号： C25D7/04 , C25D5/08
摘要： PURPOSE:To plate a long pipe advantagenously by use of a low lift head pump, by setting the installation surface of a plating liquid storage tank and the surface of a plating liquid to a higher position than the pipe bottom part of a vertical long pipe to be plated, and making the plating liquid circulate between said storage tank and the long pipe. CONSTITUTION:Plural zircaloy pipes 1 are vertically erected in a pit whose depth is, for instance, 3m, are covered with a heat insulating material 2, and are fixed to a mount 3. On the other hand, an installation surface 6 of a plating liquid storage tank 4 and a plating liquid surface 7 are positioned higher than a pipe bottom part 8. In this state, a chemical copper plating liquid 11 in the storage tank whose temperature is controlled by a heater 9 and a thermostatic oven 10 at 50-60 deg.C is sucked up by a circulating pump 5, and is supplied to a plating liquid distributing case 13 through a T pipe. Subsequently, a plating liquid distributed to plural routes by the distributing case 13 is fed to the pipes 1, copper is deposited by making it contact with the pipes, the plating liquid discharged from the pipes 1 is returned to the storage tank 4 through a plating liquid collecting case 15. In this regard, the left head requird for the pump 5 is a distance which has subtracted height of the liquid surface 7 from height of a pipe 1 end connecting jig 14b, and that of comparatively low pressure is also available.

4. 发明专利

JPS60225456A LEAD FRAME FOR SEMICONDUCTOR 失效
公开(公告)号：JPS60225456A
公开(公告)日：1985-11-09
申请号：JP8338184
申请日：1984-04-24
申请人： HITACHI CABLE , HITACHI LTD
发明人： YOSHIOKA OSAMU , YAMAGISHI RIYOUZOU , SUZUMURA TAKASHI , WAKUTA SEIJI , WAKASHIMA YOSHIAKI
IPC分类号： H01L23/50 , H01L23/495
摘要： PURPOSE:To contrive the improvement in resin sealing and in heat resistance of an Ag-plated layer by reducing Ag migration by a method wherein an Ni-Sn, Co-Sn or Ni-Co-Sn alloy plated layer is provided on a substrate, a Cu or Cu alloy plated layer is provided only at an inner lead terminal, and an Ag layer is provided thereon. CONSTITUTION:It it preferable that the Sn content of the Ni-Sn alloy or the Ni- Co-Sn alloy on the substrate is 70-80wt%. For example, after degreasing, pickling and the like of a lead frame, an Ni-Sn alloy plated layer 2 is provided over the substrate out of a pyrophosphoric bath by electrolytic plating so as to be 0.2mum thick. Next, a Cu-plated layer 4 of about 2mum thickness is provided out of a copper cyanide bath, and a partial Ag-plated layer 4 of 4mum thickness is provided at the inner lead terminal 6. Finally, the Cu-plated at the part uncovered with the Ag-plated layer 3 is anodically fused and removed in a cyanic bath; accordingly, the titled device was manufactured. This manner reduces the factors of Ag migration, improves the heat resistance of the Ag-plated layer, and yields characteristics excellent in resin sealing.

5. 发明专利

JPS59228747A ELECTRODE MATERIAL FOR SEMICONDUCTOR 失效
公开(公告)号：JPS59228747A
公开(公告)日：1984-12-22
申请号：JP10331383
申请日：1983-06-09
申请人： HITACHI CABLE , HITACHI LTD
发明人： YOSHIOKA OSAMU , YAMAGISHI RIYOUZOU , HARADA EIJI , MATSUZAKI HITOSHI
IPC分类号： H05K1/09 , H01L21/60 , H01L23/532 , H01L23/48
摘要： PURPOSE:To remarkably improve the reliability of a semiconductor by forming a diffusion preventing layer for preventing Cu from diffusing in a solder layer in case of brazing electrodes for a semiconductor. CONSTITUTION:After the surface of a Cu or a Cu alloy 3 is covered with a metal 5 having a melting point higher than the Cu, a solder plating 4 is provided. Or, a metal layer 6 is formed also on the film bonding surface of a Cu or Cu alloy foil 3, and the fusion of the Cu in the solder may be prevented previously at the stage of the foil. When the metals 5, 6 has a high melting point higher than Cu, the fusion of the Cu in the solder can be prevented. Accordingly, Ni, Co, Fe, Cr, or Ti is used as the metal, and the alloy includes one or more of elements such as Sn, Zn, In, Cd, Ag or P together with the above metals. The metal layers 5, 6 may be formed in a multilayer structure, and formed electrically or chemically, or by depositing. According to this structure, the Cu of the electrode material is not fused in the solder to prevent it from immersing an Si element, thereby obtaining sufficient heat resistance and reliability.

6. 发明专利

JPS56112454A ELECTROLESS PLATING METHOD FOR INNER SURFACE OF PIPE 失效
公开(公告)号：JPS56112454A
公开(公告)日：1981-09-04
申请号：JP1303080
申请日：1980-02-07
申请人： HITACHI CABLE , HITACHI LTD
发明人： YAMAGISHI RIYOUZOU , YOSHIOKA OSAMU , ISHIKAWA TETSUO
IPC分类号： C23C18/16 , C23C18/31 , C23C18/40 , G21C3/06 , G21C21/14
摘要： PURPOSE:To form uniform and excellent copper coating on the inner surface of Zircaloy pipe etc. in the electroless copper plating of the inner surface of a long sized pipe, by controlling the plating rate, the ratio of the area to be plated to the quantity of plating soln., and the speed of the circulation flow speed of the plating soln. through the pipe. CONSTITUTION:In the electroless copper plating of the inner surface of a long sized pipe of small diameter, an electroless copper plating soln. having 0.8-4mu/h plating rate is used. In addition, electroless plating is performed by regulating the ratio of area to be plated to the quantity of the plating soln. to 0.3-3dm /l, and the circulation flow speed of the plating soln. through the pipe to 0.3-2.5m/sec. In this way, the uniform and excellent copper coating on the inner surface of a Zircaloy pipe for coating nuclear fuel is performed.

7. 发明专利

JPS55161061A CHEMICAL PLATING METHOD FOR INNER FACE OF METAL PIPE 失效
公开(公告)号：JPS55161061A
公开(公告)日：1980-12-15
申请号：JP6810979
申请日：1979-05-31
申请人： HITACHI CABLE , HITACHI LTD
发明人： YAMAGISHI RIYOUZOU , YOSHIOKA OSAMU , ONDA MAMORU , ISHIKAWA TETSUO
IPC分类号： C23C18/16 , C23C6/00 , C23C18/31 , C23C18/40 , G21C3/20
摘要： PURPOSE:To prevent the occurrence of plating roughness based on the turbulent flow of plating liquid or ununiformity of plating thickness, by standing connecting pipe having the same inner diameter between the end part of metal pipe, at the time of applying chemical plating of copper on the inner face circulating nonelectrolytic copper plating liquid on the inner face of the metal pipe. CONSTITUTION:The connecting pipe 9 having the inner diameter of the same dimension to the metal pipe 1, is placed on the end part of the pipe 1 to be applied copper plating on the inner face and the outer circumference is supported by the silicone rubber hose 8. The L-shaped joint 2 made of plastics etc. which is not contaminated by plating liquid and also, not plated, is connected with the other end of the connecting pipe 9 and nonelectrolytic plating of copper is applied on the inner face of the pipe 1 by circulating nonelectrolytic copper plating liquid through the polyethylene pipe 4. On this occasion, turbulent flow of the plating liquid is not produced because the inner diameter of the pipe 1 and the pipe 9 have the same dimension and plating roughness or ununiformity of plating thickness is not produced on the end part of the pipe 1 by the turbulent flow of the plating liquid.

8. 发明专利

JPS55158296A TREATING APPARATUS FOR PLATING OF INNER FACE OF TUBE 失效
公开(公告)号：JPS55158296A
公开(公告)日：1980-12-09
申请号：JP6661079
申请日：1979-05-29
申请人： HITACHI CABLE , HITACHI LTD
发明人： YAMAGISHI RIYOUZOU , ONDA MAMORU , YOSHIOKA OSAMU , ISHIKAWA TETSUO
IPC分类号： C23C18/16 , C23C18/31 , C23C18/40 , C25D7/04
摘要： PURPOSE:To carry out an efficient plating of inner face of many tubes, by sending plating solution from one palting solution storage tank to the plural tubes to be treated by the common piping and at the same time, applying the plating and then, recovering treated plating solution in the above storage tank. CONSTITUTION:Warmed plating solution in the plating solution storage tank 1, is supplied to the plating solution distribution box 7 through the plating solution supply piping 6 and the solution circulation pump 8. The plating solution supplied to the box 7, is distributed to the plural tubes to be treated 9 set on the tube to be treated fitting stand 10 set the same time. The plating solution vomitted from the tube 9, is collected in the plating solution collecting box 14 and is returned to the tank 1 through the plating solution return piping 15. Plating thickness given on the inner face of the tube 9, is controlled by the monitor sample 2 thrown in the tank 1 and the treatment is finished when the sample 2 is reached aimed thickness.

9. 发明专利

JPS5243136A ABSORBING SURFACE FOR A SOLAR WATER HEATER 失效
公开(公告)号：JPS5243136A
公开(公告)日：1977-04-04
申请号：JP11775575
申请日：1975-10-01
申请人： HITACHI LTD , HITACHI CABLE
发明人： IMAHASHI HIROMICHI , TADA NAOFUMI , YAMAGISHI RIYOUZOU
IPC分类号： F24J2/48
摘要： PURPOSE:Selective absorption is enhanced by improving flatness of metal under surface.

10. 发明专利

JPS60201651A LEAD FRAME FOR SEMICONDUCTOR 失效
公开(公告)号：JPS60201651A
公开(公告)日：1985-10-12
申请号：JP5889884
申请日：1984-03-26
申请人： HITACHI CABLE , HITACHI LTD
发明人： YOSHIOKA OSAMU , YAMAGISHI RIYOUZOU , WAKASHIMA YOSHIAKI
IPC分类号： H01L23/50 , H01L23/495
摘要： PURPOSE:To enhance reliability of an iron lead frame by a method wherein an alloy metallic deposit mainly consisting of copper and zinc or copper and tin is provided on the surface of a metallic body consisting of an iron alloy or iron. CONSTITUTION:A lead frame 1 for semiconductor is constructed of an inner lead part 6 and an outer lead part 7. A Cu-Zn alloy metallic deposit 2 is provided at 3mum thickness to the lead frame 1 consisting of the 3% Cr-Fe alloy, and a partial silver metallic deposit 3 is provided at 3mum thickness to the inner lead part 6 containing a pellet fitting part (a tab part) 5. By processing in such a way, adherence of the oxide film of a copper metallic deposit, which is a primary factor to deteriorate resin sealing, can be improved remarkably even when an iron lead frame is used.

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