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1. 发明专利

JPH10162574A SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPH10162574A
公开(公告)日：1998-06-19
申请号：JP32132496
申请日：1996-12-02
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： YAMAZAKI EIJI , SEKIGUCHI TOMONORI , SAKATA TAKESHI , TANAKA HITOSHI , KIMURA KATSUTAKA
IPC分类号： G11C11/401 , G11C11/407 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device from which data can be read out at a high speed even when the memory area of the devices is the same by suppressing the increase of the memory area of the device as much as possible by serially outputting the data in the remaining memory area after the data in an area from which the data can be read out at a high speed are outputted. SOLUTION: When a CLK signal is periodically transmitted from the outside, circuits ABB and DOUT which interface the outside fetch signals at the rising edge of the CLK signal. Namely, the circuit ABB fetches and latches a signal A when the input terminal STR1 of an address strobe signal becomes a high potential and generates an internal address signal in an area A1. Then the circuit ABB sends the signal to the selection circuits DEC of storage element areas B1, B2, B3, and B4 and selects one storage element from each area. When the storage elements are selected, the data in the area B1 are first outputted to an input-output line IO, because the area B1 has a higher-speed mechanism than the other areas B2, B3, and B4. Thereafter, the output circuit DOUT outputs the signals in the areas B2, B3, and B4.

2. 发明专利

JPH03273594A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03273594A
公开(公告)日：1991-12-04
申请号：JP14628390
申请日：1990-06-06
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： NAKAGOME YOSHINOBU , ITO KIYOO , TANAKA HITOSHI , WATANABE YASUSHI , KUME EIJI , ISODA MASANORI , YAMAZAKI EIJI
IPC分类号： G11C11/413 , G11C11/401 , G11C11/407 , G11C11/409 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
摘要： PURPOSE:To enable stable operations even with the electromotive force of a power supply voltage for only one battery by increasing a data line voltage at all times so as to use it as the power source of a word driver. CONSTITUTION:Word line drive is executed with a voltage conversion circuit VLG, which converts the data line power supply voltage to a certain voltage higher than the data line voltage by the threshold voltage of a switch transistor in a memory cell array MA, and a static word driver VCHG to be operated with the output of the voltage conversion circuit VLG as the power source. Thus, the voltage higher than the data line voltage by the threshold voltage of the switch transistor in the memory cell array can be impressed as the word line voltage and even when the power supply voltage is lowered to about 1V, the memory operation can be made stable as well.

3. 发明专利

JPH06230043A VOLTAGE DETECTING CIRCUIT 失效
公开(公告)号：JPH06230043A
公开(公告)日：1994-08-19
申请号：JP1530693
申请日：1993-02-02
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： ETO JUN , TANAKA HITOSHI , NAKAGOME YOSHINOBU , UEDA SHIGEKI , YAMAZAKI EIJI , AOKI MASAKAZU
IPC分类号： G01R19/165 , G01R19/32 , G11C11/407 , G11C11/409 , G11C29/00 , G11C29/02 , H01L21/822 , H01L27/04
摘要： PURPOSE:To detect decided voltage without being influenced by temperature and power supply voltage by comparing the quantities of a first current and a second current with each other, providing a current comparison means to output the compared result, and conforming the polarity of these current to each other. CONSTITUTION:The reference current flowing in M8 is compared with the current flowing in M6 in response to the voltage to be detected in a current comparison circuit ICI. When the current flowing in M6 becomes larger than the current flowing in M8 of the circuit ICI, a terminal 103 becomes high potential, and hence the output terminal 104 of an invertor INV becomes low potential. Meanwhile, in the reverse case, the terminal 104 becomes high potential. A charge pump circuit is controlled by the output signal of the INV, and stable internal boost voltage Vch is made without dependency of source voltage Vcc. Further, because the polarity of temperature dependency is sams as to the reference current for comparison and the current to be detected, temperature dependency of the voltage to be detected is eliminated. Thus, voltage detection without temperature dependency of the detected voltage of the voltage Vch and dependency of the voltage Vcc can be performed.

4. 发明专利

JPH04228171A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH04228171A
公开(公告)日：1992-08-18
申请号：JP10705791
申请日：1991-05-13
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： NAKAGOME YOSHINOBU , TANAKA HITOSHI , YAMAZAKI EIJI , ITO KIYOO , KUME EIJI
IPC分类号： G11C11/41 , G11C11/401 , G11C11/409
摘要： PURPOSE:To shorten the charge and discharge time of data lines in order to increase the speed of the semiconductor integrated circuit. CONSTITUTION:Sense amplifier groups which are simultaneously activated by selection signal lines are divided to plural blocks and power source lines for driving the sense amplifier are so provided to each of these sense amplifier groups as to intersect with the selection signal lines. Input/output lines are otherwise divided to sub-input/output lines and the plural main input/output lines are disposed to intersect orthogonally with each thereof to form the hieratic wirings. The load capacity per each of the power source lines is decreased to decrease the time constant at the time of charge and discharge. The semiconductor integrated circuit operating at a high speed is thus provided.

5. 发明专利

JPH06215571A SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH06215571A
公开(公告)日：1994-08-05
申请号：JP387893
申请日：1993-01-13
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： YAMAZAKI EIJI , TANAKA HITOSHI , NAKAGOME YOSHINOBU , ETO JUN , MIYAZAWA KAZUYUKI , SUZUKI YUKIE , MUSHA TATSUNORI , AOKI MASAKAZU , EBIHARA TAKASHI
IPC分类号： G11C11/413 , G11C11/401 , G11C11/407 , G11C11/409
摘要： PURPOSE:To reduce a peak current, to accelerate the operation and to reduce a layout area by supplying electric charge from both sides of a capacitor charged to VCC and a power source line to a load when a load circuit is driven. CONSTITUTION:The read operation is started when a signal RASB becomes from 3V to 0V after precharged. A memory signal appears on a data line when a word line WL is received with the RASB and raised from 0V to 4.5V. Q15, Q16 are turned on by that phi2 becomes from 0V to 3V and phi2b becomes from 3V to 0V. The level of CSP is raised to VCC, and the level of CSN is lowered to grounded potential. Thus, an SA is started, and the charge of the data line D1 and the discharge of the D2 are started according to the memory signal. At this time, the charge to the CSP is performed from both sides of the capacitor C1 and the power source line 200. Further, the potential of the CSP is raised to 2.5V. Thus, the conductance of the MOSFET in the sense amplifier becomes large, and the speed of the charge/discharge by the sense amplifier is accelerated.

6. 发明专利

JPH0935480A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH0935480A
公开(公告)日：1997-02-07
申请号：JP18243295
申请日：1995-07-19
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： YAMAZAKI EIJI , TANAKA HITOSHI , HORIGUCHI SHINJI
IPC分类号： G11C11/409 , G11C11/407
摘要： PROBLEM TO BE SOLVED: To enhance noise resistance even if the characteristics of an element are fluctuated by varying the output voltage from a precharge voltage genera tion circuit to produce the precharge voltage on a bit line. SOLUTION: A high precharge voltage is set for an element where the lowering of precharge voltage on a bit line causes a trouble and a low precharge voltage is set when a leak current from a diffusion junction face in a memory cell causes reduction in the quantity of signal on the high side. Resistors 24, 25 for generating a reference voltage are connected in parallel and a fuse 21 is inserted between them. Resistors 23, 26 are connected in parallel and a fuse 22 is inserted between them. When the fuse 22 is blown out, output voltage 19 becomes 2/3 of the voltage at a node 20 if the resistors 24, 25 have a same resistance. When the fuse 21 is blown out, the output voltage becomes 1/3 of the voltage at node 20. Since the design voltage can be altered by blowing out the fuse 21, the precharge voltage can be set to maximize the noise margin.

7. 发明专利

JPH04362592A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH04362592A
公开(公告)日：1992-12-15
申请号：JP16350991
申请日：1991-06-08
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： SUZUKI YUKIE , MURANAKA MASAYA , MATSUURA NOBUMI , NAKAGOME YOSHINOBU , TANAKA HITOSHI , YAMAZAKI EIJI , SAKUTA TOSHIYUKI
IPC分类号： G11C11/401 , G11C7/10 , G11C11/409 , G11C29/00 , G11C29/34 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To expand the number of parallel bits in the multi-bit parallel test mode of a dynamic RAM, etc., without being restricted with the number of sub IO line. CONSTITUTION:A memory array is constituted of memory mats from MAT00 L-MAT07L to MAT10R-MAT17R, etc., and a first common data line where a bit line is connected selectively, that is, the sub IO line and a second common data line where the sub IO line is connected selectively, that is, main IO lines group MI0G0-MI0G7 are provided. A main amplifier constituting a main amplifier unit MAU0 and arranged to align in the direction of the prolongation of a word line is provided with a first main amplifier necessitating relatively large operating current and second main amplifier necessitating relatively small operating current, and the main amplifier is chosen according to an operating mode.

8. 发明专利

JP2000269356A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000269356A
公开(公告)日：2000-09-29
申请号：JP6805899
申请日：1999-03-15
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： YAMAZAKI EIJI , SAKATA TAKESHI
IPC分类号： H01L27/04 , G11C11/408 , G11C11/409 , H01L21/822 , H01L21/8238 , H01L21/8242 , H01L27/092 , H01L27/108 , H03F3/45 , H03K19/094
摘要： PROBLEM TO BE SOLVED: To prevent a through current before a power supply circuit starts after a voltage is applied by a method wherein a third insulation gate field-effect transistor is smaller in dependency on a threshold voltage for a first or second voltage than first and second insulated gate field-effect transistors. SOLUTION: A first insulated gate field-effect transistor 50 is connected to a well voltage supply line, and a second insulated gate field-effect transistor 51 to a substrate voltage supply line 4, respectively. The well voltage supply line 2 is connected to a well voltage generation circuit 10, and the substrate voltage supply line 4 to a substrate voltage generation circuit 11, and each of the voltage generation circuits 10, 11 to switches 5, 6 which are third insulated gate field-effect transistors, respectively. Each of the switches 5, 6 is smaller in dependency on a threshold voltage for a first or second voltage than the first and second insulated gate field-effect transistors 50, 51.

9. 发明专利

JP2000082288A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000082288A
公开(公告)日：2000-03-21
申请号：JP28242199
申请日：1999-10-04
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： NAKAGOME YOSHINOBU , ITO KIYOO , TANAKA HITOSHI , WATANABE YASUSHI , KUME EIJI , ISODA MASANORI , YAMAZAKI EIJI
IPC分类号： G11C11/407
摘要： PROBLEM TO BE SOLVED: To provide a circuit generating a word line driving high voltage required for transmitting a signal without loss by making an MISFET constituting a memory cell a sufficiently high conductive state even when an operation voltage is lowered. SOLUTION: This circuit is provided with a first capacitor CA having a first node and a second node, a first MISFET QB connected between the second node and the operation voltage, a second MISFET QC connected between the second node and the operation voltage and having a gate connected to its drain, a second capacitor CB having a third node and a fourth node and a third MISFET QE connected between the fourth node and the operation voltage and having the gate connected to its drain, and the gate of the first MISFET QB is connected to the fourth node. Thus, even when the operation voltage supplied to a charge pump circuit is lowered, a high voltage output is obtained.

10. 发明专利

JPH0635958A WORD AND PHRASE RETRIEVING METHOD 失效
公开(公告)号：JPH0635958A
公开(公告)日：1994-02-10
申请号：JP18668992
申请日：1992-07-14
申请人： HITACHI LTD , HITACHI MICOM SYST KK , HITACHI SOFTWARE ENG
发明人： OZAWA KUNIAKI , TERAHAMA YUKINORI , KAMINARI HIROYUKI , YAMAZAKI EIJI , KAMEOKA ATSUKO
IPC分类号： G06F17/21 , G06F17/27 , G06F17/30 , G06F15/38 , G06F15/20 , G06F15/40 , G06F15/401
摘要： PURPOSE:To reduce the burden on a user by judging whether or not an intermediate word decided by the syntax analysis of retrieving words/phrase exists in a text. CONSTITUTION:A CPU 210 retrieves a text table 220 with a central word as a retrieval key and when there is no central word, the original form column of a syntax analysis result table 240 is retrieved with the original form of the central word in a word/phrase analysis result table 250 as the retrieval key. When there is the original form of the central word, the CPU 210 compares the phrase structure of the retrieving phrase with the phrase structure of the text containing the central word of the retrieving words/phrases by using the phrase structure column of the word/phrase analysis result table 250 and the phrase structure column of the syntax analysis result table 240 and when the phrase structures are coincident with each other, the CPU 210 starts a phrase retrieval program 280 so as to judge whether or not all the words constituting the retrieving words/phrases exist in the phrases of the text. When the phrase structures are not coincident with each other, a flag showing the absence of the retrieving words/phrases is raised, it is displayed on a display device 400 there is no retrieving words/phrases in the text, and processing is finished.

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