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    • 2. 发明专利
    • ELECTRON BEAM LITHOGRAPHY METHOD
    • JPH01189119A
    • 1989-07-28
    • JP1253588
    • 1988-01-25
    • HITACHI LTDHITACHI VLSI ENG
    • SAKAMA ISAOTAKEDA YUTAKAMURAI FUMIO
    • H01L21/027H01L21/30
    • PURPOSE:To improve working size accuracy for a lithography figure size by dividing the lithography figure by a base state of a lithography region. CONSTITUTION:A groove formed by lithography figure 2 having 1.0mum of width, 10.0mum of length and 4.0mum of depth for reducing reflected electron quantity is formed in lithography figures 1, 1' having 0.3mum of width and 5.0mum of length on an Si substrate. Further, protrusion step difference of 0.4mum for increasing the reflected electron quantity with 0.5mum of width and 10.0mum of length is formed by a lithography figure 3 in the figure 1. The superposed part of the figure data of the figures 1, 2 is identified. Thus, the figures 1, 1' are divided into dividing lithography figures 4, 4', 5, 5', 6, 6'. Then, when the superposed parts of the figure data of the figures 4-6 with the figure 3 are identified, the figure 6 is divided into dividing lithography figures 7-9. Optimum electron beam radiation amounts are applied separately to the divided lithography figures, thereby improving the working accuracy for the lithography figure size.
    • 7. 发明专利
    • NO20055985L
    • 2006-10-30
    • NO20055985
    • 2005-12-16
    • HITACHI LTD
    • SAKAMA ISAOASHIZAWA MINORU
    • H04B1/59H04B1/03
    • The present invention provides a radio frequency IC tag which is excellent in weatherability, dustproofness waterproofness, static protection and the like and capable of making a communication distance long even though each antenna section is made small in configuration. A first antenna equipped with an IC chip is formed on an upper surface of a first spacer. A second antenna is formed on a lower surface of a top cover. A second spacer is shaped in hollow form. The first spacer and the top cover are disposed on both sides of the second spacer with the first antenna and the second antenna being opposite to each other. Each of the first spacer, the second spacer and the top cover is formed of a synthetic resin. Thus, the IC chip and each antenna section are not exposed to the outside and hence weatherability or the like is enhanced. A weak radio wave radiated from the first antenna can be transmitted with being amplified by amplifying action of the second antenna.