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    • 9. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS62249458A
    • 1987-10-30
    • JP9217586
    • 1986-04-23
    • HITACHI VLSI ENGHITACHI LTD
    • EMATA KOJITATE HIROSHIOKINAGA TAKAYUKISHIRAI MASAYUKIOTSUKA KANJI
    • H01L23/02H01L23/04H01L23/10H01L23/24
    • PURPOSE:To eliminate necessity of attaching a separate spacer and improve moisture resistant properties by a method wherein a cap is unified with a dam and two supports which support the cap are stood on the back surface of the cap and the space between the supports is filled with sealing material and, further, the end of the cap is protruded from the bottom surface of a base. CONSTITUTION:A cap 5 is put on supports 8 and 9. The cap 5 is composed of a ceiling 11, an extension 12 perpendicular to the ceiling 11 and a spacer 13 extended further from the extension 12. The inside of the support 8 is sealed with silicone system gel 6 and further the space between the two supports 8 and 9 is filled with silicone system gel 6. The spacer 13 is protruded from the back surface of a base 1 with a proper length. Thus, by providing the spacer 13 on the cap 5 itself, a separate process in which a spacer is attached to an external connecting pin 2 can be eliminated. Further, by filling the space between the support 8 and the support 9 with the gel 6, even if harmful substance such as moisture penetrates between the cap 5 and the base 1, the moisture resistant properties can be maintained and, by such double-sealing, the moisture resistant properties can be further improved.