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1. 发明专利

JP2001267567A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001267567A
公开(公告)日：2001-09-28
申请号：JP2000071415
申请日：2000-03-15
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： MIYAGUCHI YASUYUKI , MATSUURA NOBUYOSHI , HAYASHI HATSUO , YANOKURA EIJI , IIJIMA TETSUO , MACHIDA NOBUO , INAGAWA HIROMI , OISHI KENTARO , NAKURA KENICHI , SATO TAKAHIRO
IPC分类号： H01L29/417 , H01L21/3205 , H01L21/822 , H01L23/52 , H01L27/04 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To reduce the on-state resistance of a transistor which operates at a low threshold voltage. SOLUTION: In a semiconductor device, having a lateral type FET in which a source region and a drain region are formed on the main surface of a semiconductor substrate, either of the source region or the drain region which are formed on the main surface of the substrate is connected with an electrode formed on the main surface side of the substrate, and the other is connected with an electrode formed on the rear side of the substrate. In this constitution, controllability of concentration profile is satisfactory due to its being a lateral type, and operation is enabled at a low threshold voltage. Since one of a source electrode or a drain electrode is formed on the main surface of the substrate and the other is formed on the rear of the substrate, the connection region of the other electrode becomes unnecessary on the main surface of the substrate, a channel width can be enlarged with the same chip area, so that the on-state resistance of the transistor can be reduced.

2. 发明专利

JP2003017697A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2003017697A
公开(公告)日：2003-01-17
申请号：JP2001201804
申请日：2001-07-03
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MATSUURA NOBUYOSHI , MIYAGUCHI YASUYUKI , HAYASHI HATSUO , KOYANO MASAFUMI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/822 , H01L23/52 , H01L27/04 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/4238 , H01L29/7811 , H01L2224/0603 , H01L2224/48091 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To reduce the ON resistance and switching loss of a vertical MOSFET. SOLUTION: A semiconductor device is provided with a semiconductor substrate, a plurality of vertical field effect transistor cells formed in a parallelly connected state on the semiconductor substrate, a gate potential power feed part provided on the surface of the semiconductor substrate, first gate wiring provided on the semiconductor substrate and electrically connected to the gate potential power feed part, and second gate wiring provided on the semiconductor substrate electrically connected to the first gate wiring and also connected to the gate electrodes of the respective transistor cells. The second gate wiring is extended from the first gate wiring and is provided with a tip. Also, the adjacently extended ones of the second gate wiring are extended from the first gate wiring so as to turn a current flowing direction to mutually opposite directions.
摘要翻译：要解决的问题：降低垂直MOSFET的导通电阻和开关损耗。解决方案：半导体器件设置有半导体衬底，在半导体衬底上以并联连接状态形成的多个垂直场效应晶体管单元，设置在半导体衬底的表面上的栅极电力馈电部分，第一栅极布线并且电连接到栅极电力馈送部分，以及设置在半导体衬底上的电连接到第一栅极布线并且还连接到各个晶体管单元的栅电极的第二栅极布线。第二栅极布线从第一栅极布线延伸并且设置有尖端。此外，第二栅极布线的相邻延伸的第一栅极布线从第一栅极布线延伸，以将电流流动方向转向相互相反的方向。

3. 发明专利

JPH10103102A CONSTANT SPEED RUNNING DEVICE OF AUTOMOBILE 失效
公开(公告)号：JPH10103102A
公开(公告)日：1998-04-21
申请号：JP25119096
申请日：1996-09-24
申请人： HITACHI LTD
发明人： MIYAGUCHI YASUYUKI , OKUBO MINORU
IPC分类号： B60K31/00 , B60W30/00 , F02D29/02 , F02D41/14
摘要： PROBLEM TO BE SOLVED: To insure a steering property along the will of a driver by memorizing a throttle opening basic value at the fixed speed running time to a map and comparing this basic value with a throttle opening at a target car speed set time and shifting the throttle opening to the basic value when this result exceeds a certain range. SOLUTION: At a fixed speed running time, the car speed at the point of time of the fixed speed running set is set as a target car speed by a car speed control means 7. Then, the car speed in response to the torque of that time is found out and a corresponding basic opening is calculated from a prescribed map. On an uphill road, the basic opening required to a target car speed accomplishment is estimated and calculated by a different map therefrom. Then, an actual throttle valve opening at the target car speed set time is taken in and the deviation between the basic opening and actual opening is found out by an acceleration pedal pedaling amount detection means 3. When the deviation exceeds a limit value, the fixed speed running is carried out by making the throttle valve opening to the basic opening immediately and at the not exceeding time, the fixed speed running is carried out as it is.

4. 发明专利

JP2001024193A TRENCH GATE SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2001024193A
公开(公告)日：2001-01-26
申请号：JP19853199
申请日：1999-07-13
申请人： HITACHI LTD
发明人： MATSUURA NOBUYOSHI , YANOKURA EIJI , MIYAGUCHI YASUYUKI , HAYASHI HATSUO
IPC分类号： H01L21/336 , H01L29/40 , H01L29/423 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To prevent concentration of electric fields on the bottom of a gate lead-out trench in a peripheral area by protruding a second groove into an epitaxial layer through a well layer, and by making the protruding distance of the groove into the epitaxial layer shorter than the protruding distance of a first groove into the epitaxial layer. SOLUTION: An epitaxial layer 2 is formed on the first main surface of a silicon substrate 1 and an annular p-well layer 4 is formed in the inner peripheral area GR of a field oxide film 3 on the surface of the epitaxial layer 2. The p-well layer 4 is made shallower than a p-channel layer 8 and a peripheral trench 5b is made shallower than the trench 5A of an MOS section and deeper than the p-well layer 4. The projecting distance of the peripheral trench 5B into the epitaxial layer 2 is made shorter than that of the trench 5A into the epitaxial layer 2.

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