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1. 发明授权

US6445055B2 Semiconductor integrated circuit device and manufacturing method thereof 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US6445055B2
公开(公告)日：2002-09-03
申请号：US92458801
申请日：2001-08-09
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： IWASAKII TAKAYUKI , TAKEUCHI YUSUKE , YUYAMA YOSHIAKI , TANABE SHINICHI , SAKAI KOKI , NEMOTO MINEHIRO , YUKUTAKE SEIGO , KOJIMA YASUYUKI , WATANABE ATSUO , HORIUCHI MITSUAKI
IPC分类号： H01L21/76 , H01L21/762 , H01L21/822 , H01L21/84 , H01L23/52 , H01L23/522 , H01L27/04 , H01L27/12 , H01L29/00
CPC分类号： H01L21/84 , H01L21/76264 , H01L21/76283 , H01L23/5222 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： A circuit region 2 on a main surface of an SOI substrate, and a isolating region 9b defined by insulating isolation trenches 4a and 4b are connected by a wiring resistor, or a diffused resistor 11a in the SOI substrate. The isolating region 9b and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11b in the SOI substrate. Furthermore, a circuit region 3 on a main surface of an SOI substrate, and a isolating region 9c defined by insulating isolation trenches 4c and 4d are connected by a wiring resistor, or a diffused resistor 11d in the SOI substrate. The isolating region 9c and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11c in the SOI substrate. As a result, distribution of voltage applied between the circuit regions 2 and 3 by the wiring resistors or the diffused resistors 11a to 11d can increase the withstand voltage of a semiconductor integrated circuit.
摘要翻译：在SOI衬底的主表面上的电路区域2和由绝缘绝缘沟槽4a和4b限定的隔离区域9b通过SOI衬底中的布线电阻器或扩散电阻器11a连接。隔离区域9b和中间区域9通过SOI衬底中的布线电阻器或扩散电阻器11b连接。此外，在SOI衬底的主表面上的电路区域3和由绝缘隔离沟槽4c和4d限定的隔离区域9c通过SOI衬底中的布线电阻器或扩散电阻器11d连接。隔离区域9c和中间区域9通过SOI衬底中的布线电阻器或扩散电阻器11c连接。结果，通过布线电阻器或扩散电阻器11a至11d在电路区域2和3之间施加的电压的分布可以增加半导体集成电路的耐受电压。

2. 发明专利

DE69936794T2 未知
公开(公告)号：DE69936794T2
公开(公告)日：2008-04-30
申请号：DE69936794
申请日：1999-08-20
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： SATO SHINYA , SHIMADA SATOSHI , WATANABE ATSUO , ONOSE YASUO , KURYU SEIJI , MIYAZAKI ATSUSHI , HORIE JUNICHI , MONMA NAOHIRO
IPC分类号： G01L9/12 , B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00 , H01L29/84
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.

3. 发明专利

DE10338259B4 未知
公开(公告)号：DE10338259B4
公开(公告)日：2007-04-05
申请号：DE10338259
申请日：2003-08-20
申请人： HITACHI LTD
发明人： ONOSE HIDEKATSU , WATANABE ATSUO
IPC分类号： H01L29/80 , H01L29/808 , H01L21/337 , H01L29/10 , H01L29/74 , H01L29/76 , H01L29/772 , H01L31/0256
摘要： A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p + gate and a gate electrode is formed on the bottom of the first region, the structure is built such that the p + gate and an n + source are contiguous. An insulating film is formed on the surface of an n - channel, and an auxiliary gate electrode is formed on the insulating film. In addition, the auxiliary gate electrode and the source electrode are shorted.

4. 发明专利

DE10201314A1 未知
公开(公告)号：DE10201314A1
公开(公告)日：2002-10-02
申请号：DE10201314
申请日：2002-01-15
申请人： HITACHI LTD
发明人： OHYANAGI TAKASUMI , WATANABE ATSUO
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/08 , H01L29/10 , H01L29/78
摘要： A MOS field effect transistor. A field relaxation layer of a gate overlap structure is disposed in contact with a drain region for the purpose of relaxation of the electric field by increasing a distance between the field relaxation layer and a high-density layer. The electric field relaxation can further be promoted because the equipotential lines are bent by a gate insulation film. A punch-through stopper layer of a gate overlap structure is disposed in contact with a source region for suppressing spreading of a depletion layer toward the source region. The length of a gate electrode can be realized in a miniaturized size.

5. 发明专利

DE10005536A1 Pressure detector consisting of sensor and integrated circuitry for use in control systems 未知
公开(公告)号：DE10005536A1
公开(公告)日：2000-08-17
申请号：DE10005536
申请日：2000-02-08
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： ONOSE YASUO , HORIE JUNICHI , KURYU SEIJI , SAITO AKIHIKO , ICHIKAWA NORIO , WATANABE ATSUO , SHIMADA SATOSHI
IPC分类号： G01L9/00 , H01L29/84 , H01L23/28 , G01L9/08 , H01L27/20
摘要： The sensor consists of a sensor section (60) a membrane section (40) and a circuitry section (50) located next to one another on a semiconductor substrate (1). They are covered by a passivation film (107) with the sensor section only partially covered by the film

6. 发明专利

DE3867587D1 未知
公开(公告)号：DE3867587D1
公开(公告)日：1992-02-20
申请号：DE3867587
申请日：1988-10-06
申请人： HITACHI LTD
发明人： AKIOKA TAKASHI , WATANABE ATSUO , NAGANO TAKAHIRO
IPC分类号： H03K17/04 , H03K17/00 , H03K17/0412 , H03K17/567 , H03K19/08 , H03K19/0944

7. 发明专利

DE3379621D1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD FOR MANUFACTURING THE SAME 未知
公开(公告)号：DE3379621D1
公开(公告)日：1989-05-18
申请号：DE3379621
申请日：1983-11-23
申请人： HITACHI LTD
发明人： WATANABE ATSUO , IKEDA TAKAHIDE , TSUKUDA KIYOSHI , HIRAO MITSURU , MUKAI TOUJI , KAMEI TATSUYA
IPC分类号： H01L27/08 , H01L21/8249 , H01L27/06 , H01L27/118 , H01L29/68 , H01L29/78 , H01L21/82
摘要： A semiconductor integrated circuit device and a manufacturing method thereof, which device comprises:… a semiconductor layer (10) of a predetermined conductivity type formed on a semiconductor substrate (1) of a first conductivity type;… a first well region (50) of a second conductivity type formed at a predetermined position at a surface of said semiconductor layer, an impurity concentration of said first well region gradually decreasing as it goes from the surface of said semiconductor layer toward said semiconductor substrate;… a second well region (5) of the first conductivity type formed in contact with said first well region at the surface of said semiconductor layer and to surround said first well region, an impurity concentration of said second well region gradually decreasing as it goes from the surface of said semiconductor layer toward said semiconductor substrate;… a first buried region (2) of the second conductivity type formed between and adjacent to said first well region and said semiconductor substrate, said first buried region having a higher impurity concentration than an adjacent area of the adjacent first well region;… a second buried region (40) of the first conductivity type formed between and adjacent to said second well region and said semiconductor substrate, said second buried region having a higher impurity concentration than an adjacent area of the adjacent second well region; and… semiconductor elements (62, 70, 61) formed in said first well region and said second well region.

8. 发明公开

EP1207378A4 SEMICONDUCTOR PRESSURE SENSOR AND PRESSURE SENSING DEVICE 有权
标题翻译：半导体压力传感器和装置检测打印
公开(公告)号：EP1207378A4
公开(公告)日：2002-11-13
申请号：EP99938551
申请日：1999-08-20
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： SATO SHINYA , SHIMADA SATOSHI , WATANABE ATSUO , ONOSE YASUO , KURYU SEIJI , MIYAZAKI ATSUSHI , HORIE JUNICHI , MONMA NAOHIRO
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00 , G01L9/12 , H01L29/84
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： A pressure sensor produced by etching a sacrificial layer. The sensor has an etching channel sealing structure which is excellent in water nonpermeability and the diaphragm of which hardly changes with time. The sensor is excellent in productivity and durability. A very small cavity is made by etching a sacrificial layer, and then a silicon oxide layer is deposited by, e.g., CVD to seal an etching channel. A water-nonpermeable thin film of polysilicon is formed covering the silicon oxide layer. The etching channel sealing structure of the pressure sensor is simplified, water is prevented from entering the cavity to enhance the moisture resistance. The change in shape with time of the diaphragm is suppressed because the sealing material has a small film stress.

9. 发明公开

EP0139019A4 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF. 失效
标题翻译：半导体器件及其制备方法。
公开(公告)号：EP0139019A4
公开(公告)日：1985-12-02
申请号：EP84901232
申请日：1984-03-26
申请人： HITACHI LTD
发明人： IKEDA TAKAHIDE , WATANABE ATSUO , MUKAI TOUJI , ODAKA MASANORI , OGIUE KATSUMI
IPC分类号： H01L29/78 , H01L21/331 , H01L21/74 , H01L21/8249 , H01L27/06 , H01L29/73 , H01L27/08
CPC分类号： H01L21/74 , H01L21/8249 , H01L27/0623

10. 发明专利

CA2186796A1 Power Semiconductor Device 未知
公开(公告)号：CA2186796A1
公开(公告)日：1997-04-04
申请号：CA2186796
申请日：1996-09-30
申请人： HITACHI LTD
发明人： ISHIKAWA KATSUMI , SAITO KATSUAKI , SATO YUTAKA , WATANABE ATSUO , KATOH SHUJI , MOMMA NAOHIRO
IPC分类号： H01L29/32 , H01L29/74 , H01L29/06 , H01L29/87 , H01L29/861
摘要： The present invention relates to a power semiconductor device such as a diode and thyristor. In a semiconductor device such as a diode and thyristor having at least one pn junction between a pair of main surfaces, a first main electrode is formed on the surface of one of the main surfaces and a second main electrode is formed on the surface of the other one of the main surfaces. A semiconductor lattice defect is formed such that its lattice defect density increases gradually in the direction from the first main electrode to the second main electrode. Since the distribution of carrier density in the conduction state can be flattened according to the invention, the reverse recovery charge can be reduced substantially without causing the ON-state voltage to increase.

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