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1. 发明专利

JPS612614A AIR-FLOAT WAFER CARRY PATH 失效
公开(公告)号：JPS612614A
公开(公告)日：1986-01-08
申请号：JP12252785
申请日：1985-06-07
申请人： HITACHI LTD , HITACHI TOKYO ELECTONICS KK
发明人： YANAGISAWA HIROSHI , HASEGAWA NOBUO , SUZUKI MICHIO , ISHIOKA MASATO , NAGATOMO HIROTO
IPC分类号： B65G49/07 , B65G51/03 , H01L21/67 , H01L21/677
摘要： PURPOSE:To reduce the spatial occupation of carry path by making air-holes for carrying in both left and right directions in the wafer carry path. CONSTITUTION:Air-holes 21, 22 for blowing out the air are made in both left and right directions then air for left or right direction carrying is fed under time sharing contol to carry Si wafer bilaterally thus to reduce the spatial occupation.

2. 发明专利

IN168547B HERMETIC DYNAMIC MACHINE 未知
公开(公告)号：IN168547B
公开(公告)日：1991-04-20
申请号：IN978CA1987
申请日：1987-12-16
申请人： HITACHI LTD
发明人： HASEGAWA NOBUO , OKUYAMA EIICHI
IPC分类号： H02K9/06 , B23Q11/00

3. 发明专利

JPS6038821A PATTERN FORMING METHOD 失效
公开(公告)号：JPS6038821A
公开(公告)日：1985-02-28
申请号：JP14639883
申请日：1983-08-12
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO , HASEGAWA NOBUO , HAYASHIDA TETSUYA
IPC分类号： H01L21/027 , G03F7/09 , G03F7/11 , G03F7/20 , H01L21/30
摘要： PURPOSE:To enable to form a microscopic and highly accurate pattern by a method wherein a light transmitting type reflection preventing film is formed on a photoresist film and an exposure is performed thereon. CONSTITUTION:A photoresist 8 is formed on an Si substrate 7 having a stepping by performing an ordinary method, and then a polysiloxin film 9 is formed by application as a reflection preventing film on the photoresist 8. The absorption coefficient of the polysiloxin is to be 10 or below in the wavelength 436nm of the exposure light, and the light can be passed through completely. Subsequently, an ordinary exposure is performed using the light of wavelength 436nm. Then, the polysiloxin 9 is removed using xylene, and a photoresist 8' is formed on the Si substrate by performing an ordinary developing process. The reflection preventing film is not limited to polysiloxin only, and any material such as polyvinyl alcohol and the like, which reduces reflection based on the principle of reflection prevention and which passes through the exposure light completely and which gives no degeneration on the photoresist, can be used.

4. 发明专利

JPS57149733A DRY ETCHING METHOD 失效
公开(公告)号：JPS57149733A
公开(公告)日：1982-09-16
申请号：JP3389881
申请日：1981-03-11
申请人： HITACHI LTD
发明人： KURE TOKUO , OKUDAIRA SADAYUKI , HASEGAWA NOBUO , YANAGISAWA HIROSHI , UEHARA KEIJIROU
IPC分类号： H01L21/302 , G03F7/36 , H01L21/3065
摘要： PURPOSE:To improve the characteristics of etching and controllability by irradiating ultraviolet rays to a photo-resist pattern and thermally treating it and conducting dry etching. CONSTITUTION:N2 Is discharged when ultraviolet rays are irradiated to the resist pattern or it is heated at 130 deg.C or higher, and etching can be conducted at predetermined speed, but an effect by an organic solvent, etc., which are not decomposed optically, is eliminated when further using jointly heat treatment, the etching further becomes effective, and the characteristics of etching and controllability are improved. It is preferabe that such treatment is executed just before etching, and the characteristics of etching is further improved when the resist pattern is exposed and heated in a pretreatment chamber and carried up to an etching chamber in vacuum.

5. 发明专利

JPS56146253A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56146253A
公开(公告)日：1981-11-13
申请号：JP4920980
申请日：1980-04-16
申请人： HITACHI LTD
发明人： KOYANAGI MITSUMASA , YAMAMOTO NAOKI , HASEGAWA NOBUO
IPC分类号： H01L21/60 , H01L21/768
摘要： PURPOSE:To obtain a good bonding in low contact resistance by a method wherein a part of the upper electrode wiring is removed to form a contact formation region or a bonding region in a multilayer electrode wiring structure. CONSTITUTION:A MOS transistor is formed in an Si substrate 10, and a field oxide film 5 and a PSG film 7 are formed. Then, a contact hole is opened to alloy an Al film 20 and an SiO2 film 30 to be piled up. An Al electrode is formed by a photoetching to permit the PSG film or CVD-SiO2 film 40 to be piled up. Then, a hole 33 is formed in the PSG film 40 by the photoetching and the Si film 30 in the hole 33 is removed. The contact resistance at a time when the bonding 25 and the Al two- layered wiring are formed is reduced and the satisfactory bonding can be attained.

6. 发明专利

JPS5454577A MATERIAL WORKING METHOD WITH PHOTO RESIST 失效
公开(公告)号：JPS5454577A
公开(公告)日：1979-04-28
申请号：JP12093777
申请日：1977-10-11
申请人： HITACHI LTD
发明人： KAMIGAKI YOSHIAKI , HASEGAWA NOBUO , ITOU KIYOO , KAWAMOTO YOSHIFUMI , HASHIMOTO TETSUKAZU
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/306 , H01L21/8234 , H01L27/06
摘要： PURPOSE:To perform fine working by softening the photo resist film having been made in eaves form to allow the same to be contacted to the material being worked and working the material being worked at least twice in a self-alignment manner. CONSTITUTION:An oxide film 2, phosphorus-doped poly-Si 3 and an oxide thin film 4 are laminated on a p type Si substrate 1 and a resist mask 5 is made. When etching is performed by keeping a NH2F/HF solution of 6:1 at 20 deg.C, then side etching size and variations in shape may be made sufficiently small and the fil m 4 is etched. Following to this, the substrate is treated for 10 minutes at 140 deg.C to soften the resist 5, after which the film 3 is plasma-etched to remove the mask 5. Next, n layers 6-1, 6-2 are provided by implanting As and the film 3 is plasma- etched through the mask 4, after which As is driven to provide n layers 7-1, 7-2, whereby a MOSFET is created. Then, working more than twice in a self-alignment manner becomes possible with one kind of mask and fine working may be formed with good controllability of working and working shape.

7. 发明专利

JPS5368578A PHOTO MASK 失效
公开(公告)号：JPS5368578A
公开(公告)日：1978-06-19
申请号：JP14335176
申请日：1976-12-01
申请人： HITACHI LTD
发明人： YANAGISAWA HIROSHI , MATSUZAWA TOSHIHARU , HASHIMOTO TETSUKAZU , DOUDA KIKUO , HASEGAWA NOBUO , MORIGUCHI YORIO , TSUJITA MASAHIKO , MISHIMAGI HIROMITSU
IPC分类号： H01L21/027 , G03C5/00 , G03F1/00 , G03F1/48 , G03F7/004 , G03F7/11 , H01L21/302 , H05K3/06
摘要： PURPOSE:To prevent the tacky adhesion of a mask and a resist and reduce the production of defects at the etching by beforehand making the surface free energy of the resist side surface of the mask lower than the surface free energy of the surface of the substrate in contact with the resist at the time of contacting three of photo mask, photo resist and work substrate.

8. 发明专利

JPS6342122A PATTERN FORMATION 失效
公开(公告)号：JPS6342122A
公开(公告)日：1988-02-23
申请号：JP18508786
申请日：1986-08-08
申请人： HITACHI LTD
发明人： FUKUDA HIROSHI , HASEGAWA NOBUO , TANAKA TOSHIHIKO
IPC分类号： H01L21/30 , G03F7/20 , G03F7/26 , H01L21/027
摘要： PURPOSE:To extend the effective focal length in the projecting exposure process by a method wherein focussing surfaces are set up at multiple positions relatively different from a resist layer on an optical axis to be exposed simultaneously or stepwise or exposed while continuously changing the resist layer on the optical axis. CONSTITUTION:A substrate 1 is coated with photoresist to form a photoresist layer 2 and thin a pattern is exposed thereon using a projecting exposure device to be developed later. At this time, after firstly exposing the pattern at the position of focussing point of light 6 (the first focussing point), a stage fixed to the substrate 1 is shifted in the optical axis direction to expose the pattern for the second time at the position 4 specifically different from the first focussing point 3 in the optical axis direction as another focussing point (the second focussing point). Through these procedures, the focal length can be extended so that a fine pattern may be formed with high precision regardless of any step difference on the surface.

9. 发明专利

JPS6262521A PATTERN FORMING METHOD 失效
公开(公告)号：JPS6262521A
公开(公告)日：1987-03-19
申请号：JP20152585
申请日：1985-09-13
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO , SHIRAISHI HIROSHI , HASEGAWA NOBUO , HAYASHIDA TETSUYA
IPC分类号： G03F7/11 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30 , H01L21/67 , H01L21/68
摘要： PURPOSE:To form an ultrafine and accurate pattern and a pattern having high alignment accuracy by forming a film made of polysaccharide on a resist before exposing. CONSTITUTION:Polysaccharide is formed on a photoresist film or an X-ray resist film. The polysaccharide is transparent, and has smaller refractive index than that of the resist. Therefore, it serves as a resist reflection preventive film. Since dimensional accuracy and alignment accuracy can be improved, a circuit can be integrated, a chip area can be contracted, and a high quality element having stable electric characteristic can be obtained at a high yield.

10. 发明专利

JPS60149130A METHOD FOR PATTERN DETECTION 失效
公开(公告)号：JPS60149130A
公开(公告)日：1985-08-06
申请号：JP481384
申请日：1984-01-17
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO , HASEGAWA NOBUO , HAYASHIDA TETSUYA
IPC分类号： H01L21/027 , G03F7/09 , G03F9/00 , H01L21/30
摘要： PURPOSE:To improve the accuracy in pattern detection by a method wherein when photoresist, X-ray resist, ion-beam resist or electron-beam resist is formed on a semiconductor substrate comprising a combined pattern and the pattern is detected by using a monochromic or multi-colored light, a reflection preventing film utilizing an interference effect is arranged on the resist to project the light through this film. CONSTITUTION:The whole surface of an Si substrate 31 comprising a recessed combined pattern is coated with a resist film 32 of photoresist, X-ray resist, ion-beam resist or electron-beam resist in a manner the recessed pattern is filled. Next, on this substrate, an extremely thin reflection preventing film 33 of 90- 140nm thick which consists of polysiloxane is formed and the substrate is irradiated with a bright-line spectrum such as He-Ne laser, He-Cd laser and mercury through said film 33 in order to detect the recessed combined pattern. Thus, reflection on the resist surface is reduced and deterioration of the detection signals due to multi-interference.

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