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1. 发明专利

JPS62249461A RESIN-SEALDED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62249461A
公开(公告)日：1987-10-30
申请号：JP9219986
申请日：1986-04-23
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： MATSUKAWA KEIZO , KIMOTO RYOSUKE , OTA KEIJI , YAMADA MUNEHIRO , KAWAKUBO HIROSHI
IPC分类号： H01L23/50 , H01L23/28 , H01L23/31
摘要： PURPOSE:To prevent absorbed moisture from being condensed on the back surface of a tab and avoid package cracking caused by the heat expansion of the condensed moisture at the time of mounting and improve the reliability by a method wherein, before applying moisture absorbing material, treatment such as timbul treatment which improves the adhesiveness with a coating layer is applied to the rear of the tab. CONSTITUTION:A semiconductor device 9 is die-bonded on the tab 8 of a lead frame 7 with external leads 2. In the lead frame 7, a large number of inner leads 10 are provided so as to surround the tab 8 at the center. Treatment such as timbul treatment is applied to the rear of the tab 8 and, by such treatment, a coating layer 12 made of moisture absorbing material adheres satisfactorily to the tab 8 without being peeled off along the boundary between the tab 8 and itself and further the coating layer 12 is formed. Therefore, the condensation of moisture on the back surface of the tab 8 can be avoided and, even if th package 3 is exposed under the heating condition such as soldering 6 for mounting, expansion of the moisture in the package 3 does not occur so that crackings in sealing resin part 1 caused by such thermal distortion can be also avoided.

2. 发明专利

JPS6379348A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6379348A
公开(公告)日：1988-04-09
申请号：JP22359986
申请日：1986-09-24
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： MIYAMOTO KEIJI , ICHIHARA SEIICHI , MATSUKAWA KEIZO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60
摘要： PURPOSE:To alleviate stress, which is applied to an external electrode at the time of bonding by an organic film and to enhance reliability, by providing the organic film between the peripheral part of the external electrode and an insulating film comprising an inorganic film in a ring shape. CONSTITUTION:An organic film 10 is formed in a ring shaped pattern so that the central part of an aluminum layer 9, which is a part of a bump electrode 2, is exposed. The organic film 10 is provided only at the periphery of the bump electrode 2 on a semiconductor chip 1. The film is not provided at a part other than said periphery. Therefore, an insulating film 8, which is an inorganic film, is exposed at the part other than the periphery of the bump electrode 2. Since the organic film 10 is provided only at the peripheral part of the bump electrode 2, stress due to thermal expansion with respect to a packaging material 15 is less and the film 10 is hard to be separated. Since depositing property between the packaging material and the insulating film 8 is excellent, the insulating film 8 is not separated due to the difference in thermal expansions with respect to the packaging material 15.

3. 发明专利

JPH01233742A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01233742A
公开(公告)日：1989-09-19
申请号：JP6162588
申请日：1988-03-14
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： ICHIHARA SEIICHI , YAMADA MUNEHIRO , MATSUKAWA KEIZO
IPC分类号： H01L21/60
摘要： PURPOSE:To form a bump electrode whose height is even by a method wherein a metal paste for bump electrode formation is filled into an opening of a mask on a substrate, the mask is removed and, after that, a heat treatment is executed. CONSTITUTION:An opening 5 is formed on a wiring part 3 in a passivating film 4 as an uppermost layer; the wiring part 3 is exposed. A substratum metal film 6 is formed on the whole surface on a substrate 1. A resist film 7 is coated or pasted on the passivating film 4; an opening 8 is formed only on the metal film 6 in the resist film 7. A metal paste 9 for bump electrode formation use is thrust and filled into the opening 8. A solvent in the paste 9 is volatilized; the resist film 7 is removed. After that, a baking operation is executed; a bump electrode 9A is formed. By this setup, the bump electrode 9A whose height is even can be formed.

4. 发明专利

JPS63160249A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63160249A
公开(公告)日：1988-07-04
申请号：JP30647386
申请日：1986-12-24
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： MIYAMOTO KEIJI , ICHIHARA SEIICHI , MATSUKAWA KEIZO
IPC分类号： H01L21/60
摘要： PURPOSE:To flatten the surface of a bump electrode and to contrive improvement in connecting strength with a lead by a method wherein, in a tape-carrier type device, a bump electrode is formed on the upper part of the external terminal (bonding pad) located in the aperture of the passivation film of a chip. CONSTITUTION:A base metal film 2A and an intermediate conductive film 2B are formed on the surface of the external terminal 1A of a chip 1 and also on the surface of a passivation film 1B. Then, gold is grown on the surface of the film 2B using a plating mask in such a manner that the part smaller in size than the aperture part 1C of the film 1B will be exposed on the flat surface of the film 2B, and a bump electrode 2C is formed. Is the electrode 2C is formed on the flat surface of the external terminal 1A, the surface of the electrode can be made flat, and a recessed part is not generated in the center part of the electrode. Accordingly, the connecting strength with the inner lead can be improved.

5. 发明专利

JPS6379332A FILM CARRIER 失效
公开(公告)号：JPS6379332A
公开(公告)日：1988-04-09
申请号：JP22359386
申请日：1986-09-24
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： ICHIHARA SEIICHI , MIYAMOTO KEIJI , MATSUKAWA KEIZO , YAMADA MUNEHIRO
IPC分类号： H01L21/60 , H01L21/66
摘要： PURPOSE:To obtain a film carrier which is available for testing and which also has antistatic effect, by laminating or spreading an antistatic layer on the peripheral part separated from a pad for testing and the peripheral part of a sprocket. CONSTITUTION:An antistatic layer 6 constituted of conductor foils or carbon tapes in the case of forming a lead is laminated or spread on the peripheral part separated from a pad 5 for testing and the peripheral part of sprocket holes 2. As an antistatic area is formed on the peripheral part of a sprocket holes 2, electrification is reduced, even if a tape is carried by the sprocket holes 2, or a reel and a tape 1 contact with each other. Thereby, a film carrier which is available for test and also has antistatic effect can be obtained.

6. 发明专利

JPH01191452A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01191452A
公开(公告)日：1989-08-01
申请号：JP1445088
申请日：1988-01-27
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： ICHIHARA SEIICHI , MATSUKAWA KEIZO , KOYAMA HIROSHI
IPC分类号： H01L21/60
摘要： PURPOSE:To prevent the occurrence of defects such as cracks in the periphery of each electrode of a pellet and to improve the reliability of a semiconductor device, by bonding an inner lead to a bump wherein at least a part of the inner lead has a porous state. CONSTITUTION:A porous bump 4a is obtained as follows: a bump 4 comprising gold is formed on the surface of a barrier metal layer 10b by a plating method; gold paste is deposited on the upper part of the bump 4 by a screen printing method and the like; and the bump is heated at about 100 deg.C. The following steps are performed when an inner lead 6a is bonded to the porous bump 4a: the gold or tin plated inner lead 6a is overlapped on the porous bump 4a; a bonding tool 11 is heated to about 50 deg.C; and the bonding tool 11 is pushed to the lead from the upper part so as to apply a load. Sintering reaction of gold grains constituting the porous bump 4a is made to progress by the heat of the tool 11. Thus, the bonding of the inner lead 6a and the porous bump 4a is achieved. At this time, the soft porous bump 4a is deformed, and stress is absorbed.

7. 发明专利

JPH01135050A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01135050A
公开(公告)日：1989-05-26
申请号：JP29212587
申请日：1987-11-20
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KATAOKA TAKESHI , MATSUKAWA KEIZO , KOYAMA HIROSHI , WAKASHIMA YOSHIAKI
IPC分类号： H01L23/28
摘要： PURPOSE:To prevent cracks due to bending stress at junction of sealing material and solder resist by providing a reinforce layer around a device hole which is formed in a plastic film laminated with lead pattern and solder resist, and by sealing a semiconductor pellet bonded to the lead pattern with sealing material. CONSTITUTION:A copper foil is laminated on a surface of a plastic film 1 whereon a device hole 3 and a sprocket hole 6 are formed by punching. After a specified lead pattern 5 is formed, plating such as Sn is applied to an inner lead 5a. Then solder resist 7 is laminated by screen printing on a surface of the plastic film 1 excepting the device hole 3 and the sprocket hole 6 and yet solder resist is laminated again around the device hole 3, which serves as a reinforce layer 8. A semiconductor pellet 2 which is provided with a bump 2a plated with Au is bonded to the edge of the inner lead 5a thus sealing the upper surface and the side surface of a semiconductor pellet 2 with sealing material 4.

8. 发明专利

JPS6417450A FORMATION OF BUMP 失效
公开(公告)号：JPS6417450A
公开(公告)日：1989-01-20
申请号：JP17278687
申请日：1987-07-13
申请人： HITACHI LTD
发明人： KIKUCHI HIROSHI , OKA HITOSHI , WAKADORI YOSHIAKI , MATSUKAWA KEIZO
IPC分类号： H01L21/60
摘要： PURPOSE:To obtain a bump which shows the same characteristics as in a conventional method, by performing a very small number of processes and using an electroless plating method to form a metallic bump. CONSTITUTION:A metallic wiring 1 is mounted on a surface, and a prescribed region of the wiring 1 on a substrate 3 is coated with an insulation layer 2, and a metallic bump 6 of a projecting shape is formed on the wiring 1. Then a metallic bump 6 is formed by an electroless plating method. The metallic bump 6 is made of one metal selected from gold, silver, copper, nickel, or cobalt. Thereupon, very small number of processes are used in comparison with the formation of the bump by a conventional electrical plating method, so that the bump showing the same characteristics as in the conventional method can be obtained.

9. 发明专利

JPH09181118A METHOD FOR MANUFACTURING ELECTRONIC CIRCUIT PARTS 失效
公开(公告)号：JPH09181118A
公开(公告)日：1997-07-11
申请号：JP33603596
申请日：1996-12-16
申请人： HITACHI LTD
发明人： TAKAHASHI MICHIRO , MITA TORU , NAKAGAWA YASUO , HAMADA TOSHIMITSU , IWATA HISAFUMI , KANEDA AIZO , SERIZAWA KOJI , TANAKA HIROYUKI , SUGIMOTO KOICHI , SAKAI TOSHIHIKO , MATSUKAWA KEIZO , MIMATA TSUTOMU
IPC分类号： H01L21/60 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To bond a TAB inner lead with high precision and high reliability by a method wherein pressure in which a tool is applied to a part to be connected via a connection part and a rate at the time when the tool approaches and comes into contact with the connection part are respectively independently established, and a tool drive mechanism is controlled. SOLUTION: In a controller 520, a signal of an optical encoder 506 directly coupling to a tool drive motor 505 is input into a counter 529 and numerically processed to detect a position in a Z direction of the tool. In parallel, a force detection value 527 of load cells specified by a rotation angle displacement 525 of the motor 505 and a displacement of a tool 510 is input into an A/D converter 531 via an amplifier 530, and fetched as a digital value. A bonding algorithm 523 specifies a current value for outputting to the motor 505 from this detection of a position in a Z direction of the tool and the force detection. This output current command value is input into an amplifier 524 to control a current of the motor. Thereby, it is possible to position with high precision.

10. 发明专利

JPS62274736A FILM CARRIER TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62274736A
公开(公告)日：1987-11-28
申请号：JP11737686
申请日：1986-05-23
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： MATSUKAWA KEIZO , SHIMOISHI TOMOAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To prevent the generation of cracks on resin as well as to contrive improvement in dampproof property by a method wherein the corner part, where the cross-section constituting a film carrier comes in contact with the resin of a square lead, is formed into a roundish shape. CONSTITUTION:A finger lead 2 is constituted in a trapezoidal shape. An example of trapezoidal constitution is shown here, the thickness of coating of resin 10 can be secured to the fullest extent in the shoulder part of the lead 2. The lead in which no stress is concentrated at the shoulder part may be used even when it is in the form other than the trapezoid. The corner part of a rectangular lead is to be rounded, because the rounded lead can be used. For example, when the cross-section of a lead is formed into semicircular shape, the edge of cross-section of the lead is removed. As it is roundishly formed, the concentration of stress is hardly generated, and also resin can be coated thickly on the shoulder part when compared with the lead having rectangular cross-section. As a result, the generation of cracks on resin can be prevented, the infiltration of the impurities such as moisture and the like from the cracks can be prevented, and the dampproof property of the semiconductor device can be improved.

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