专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH07161700A PLASMA TREATMENT METHOD 失效
公开(公告)号：JPH07161700A
公开(公告)日：1995-06-23
申请号：JP15835594
申请日：1994-07-11
申请人： HITACHI LTD , HITACHI ENG SERVICE
发明人： FUKUDA TAKUYA , MOCHIZUKI YASUHIRO , MONMA NAOHIRO , TAKAHASHI SHIGERU , SUZUKI NOBORU , SONOBE TADASHI , CHIBA ATSUSHI , SUZUKI KAZUO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To realize plasma treatment of high efficiency, and improve the denseness and the crystallinity of an obtained film, by setting the position of a substrate to be treated within a specified distance from the electron cyclotron resonance point(ECR point) which becomes the maximum forming point of plasma active seeds. CONSTITUTION:The plasma process equipment consists of a plasma forming chamber 4, a microwave waveguide 7, magnetic field coils 9, 13 for ECR, a treatment chamber 2, an exhaust vent 12, reaction gas supplying nozzles 5, 11, and a substrate retaining stand 3, and the position of the substrate retaining stand 3 can be changed in the direction of plasma flow. A silicon wafer is used as a substrate 1 to be treated, and a silicon oxide film is formed. By adjusting currents which are applied to the magnetic field generating coils 9 and 13, magnetic flux density distribution is controlled, or by adjusting the position of the substrate retaining stand, the distance between the ECR point and the substrate to be treated is set to be 0-150mm. The efficiency of plasma treatment and the characteristics of a deposition film are largely dependent on the distance between the ECR point and the substrate to be treated. When the distance is smaller than or equal to 0-150mm, the deposition speed and the film quality become excellent.

2. 发明专利

JPH0774116A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH0774116A
公开(公告)日：1995-03-17
申请号：JP16355194
申请日：1994-07-15
申请人： HITACHI LTD , HITACHI ENG SERVICE
发明人： SUZUKI KAZUO , SUZUKI NOBORU , SONOBE TADASHI , CHIBA ATSUSHI , MONMA NAOHIRO , MOCHIZUKI YASUHIRO , TAKAHASHI SHIGERU , FUKUDA TAKUYA
IPC分类号： C23C16/50 , C23C16/511 , C23F4/00 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To improve the utilization efficiency of a generated plasma significantly and improve the quality of a processed film and, further, increase the processing speed. CONSTITUTION:The magnetic flux density on the microwave introducing side of a discharge tube 2 is larger than the magnetic flux density at the resonance generating position of the electron resonance caused by a magnetic field and a microwave 4. The flux density of the magnetic field is so distributed as to have a distribution having the resonance generating position of the electron cyclotron resonance on one of its curved surfaces and, further, the resonance generating position of the electron cyclotron resonance is positioned in a sample chamber 9 at least partially.

3. 发明专利

JPH0774112A METHOD AND APPARATUS FOR PLASMA TREATMENT 失效
公开(公告)号：JPH0774112A
公开(公告)日：1995-03-17
申请号：JP23936693
申请日：1993-09-27
申请人： HITACHI LTD , HITACHI ENG SERVICE
发明人： SUZUKI KAZUO , SUZUKI NOBORU , SONOBE TADASHI , CHIBA ATSUSHI , MONMA NAOHIRO , MOCHIZUKI YASUHIRO , TAKAHASHI SHIGERU , FUKUDA TAKUYA
IPC分类号： C23C16/50 , C23C16/511 , C23F4/00 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a plasma treatment apparatus which uses plasma effectively to improve the quality of the treated film and to obtain a higher process speed. CONSTITUTION:The flux density of the magnetic field generated in vacuum containers 2 and 9 by means 1 decreases monotonously with the distance to a susceptor 8. An electron cyclotron resonance position (a) is positioned near the susceptor.

4. 发明专利

JPH07166361A PLASMA TREATMENT 失效
公开(公告)号：JPH07166361A
公开(公告)日：1995-06-27
申请号：JP15835494
申请日：1994-07-11
申请人： HITACHI LTD , HITACHI ENG SERVICE
发明人： FUKUDA TAKUYA , MOCHIZUKI YASUHIRO , MONMA NAOHIRO , TAKAHASHI SHIGERU , SUZUKI NOBORU , SONOBE TADASHI , CHIBA ATSUSHI , SUZUKI KAZUO
IPC分类号： C23C16/50 , C23C16/511 , H01L21/205 , H01L21/31
摘要： PURPOSE:To form thin films having excellent crystallinity and density by specifying the distance between a substrate and an electron cyclotron resonance expansion point at the time of forming the thin films on the substrate by a plasma CVD method utilizing electron cyclotron resonance. CONSTITUTION:The substrate 1, such as silicon wafer, is mounted on a supporting base 3 in a treatment chamber 2 and the inside of the treatment chamber 2 is evacuated to a vacuum from a discharge port 12. Gaseous oxygen is introduced from a gas supply nozzle 5 and microwaves 6 are introduced from a microwave introducing pipe 7 through an introducing window 8 into a plasma forming chamber 4. Static magnetic field generating coils 9, 13 disposed on the outer side of the plasma forming chamber 4 are energized to form magnetic fields and to generate plasma flow 10. Next, gaseous CH4 is supplied from a gas supply nozzle 11 and is activated by the electron cyclotron resonance generated in the treatment chamber 2, by which the thin films of SiO2 are formed on the surface of the substrate 1. In such a case, the substrate 1 is installed within 150mm from the electron cyclotron resonance point, by which the thin films having the excellent crystallinity and density and the high quality are formed.

5. 发明专利

JPH0556855B2 失效
公开(公告)号：JPH0556855B2
公开(公告)日：1993-08-20
申请号：JP5009087
申请日：1987-03-06
申请人： HITACHI LTD , HITACHI ENG SERVICE
发明人： FUKUDA TAKUYA , MOCHIZUKI YASUHIRO , MONMA NAOHIRO , TAKAHASHI SHIGERU , SUZUKI NOBORU , SONOBE TADASHI , CHIBA ATSUSHI , SUZUKI KAZUO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31

6. 发明专利

DE3853551T2 未知
公开(公告)号：DE3853551T2
公开(公告)日：1995-10-05
申请号：DE3853551
申请日：1988-05-06
申请人： HITACHI LTD , HITACHI SERVICE ENG
发明人： MOCHIZUKI YASUHIRO , MOMMA NAOHIRO , TAKAHASHI SHIGERU , FUKUDA TAKUYA , SUZUKI NOBORU , SONOBE TADASI , CHIBA KIYOSHI , SUZUKI KAZUO
IPC分类号： C23C16/511 , H01J37/32 , H05H1/46
摘要： A plasma treatment apparatus capable of depositing a desired substance on a substrate (5, 211, 312) to form a thin film is disclosed. Especially, for a plasma treatment apparatus using microwaves, a structure of the apparatus is disclosed with which the film deposition rate and the film quality can be improved and the size of the apparatus can be made small.

7. 发明专利

DE3446919A1 Thick-film circuit and composition for the fabrication thereof 未知
公开(公告)号：DE3446919A1
公开(公告)日：1985-07-11
申请号：DE3446919
申请日：1984-12-21
申请人： HITACHI LTD
发明人： SUZUKI HIDEO , TAKAHASHI SHIGERU , OGIHARA SATORU
IPC分类号： H05K1/09 , C03C3/074 , C03C3/14 , C03C8/14 , C03C8/18 , C04B41/51 , C04B41/88 , H01B1/14 , H01B1/16 , H01C7/00 , H01C17/065 , H01L27/01 , H01L21/84
摘要： A thick-film circuit is described, especially an integrated hybrid circuit, having good bonding to a sintered ceramic substrate and little variation of the resistance or conductance with time. Also described is the composition for forming the thick-film circuit, which contains an organic binder, electrically conductive powders and glass powders. The glass powders contain from 10 to 50 % by weight of lead oxide, expressed as PbO, from 20 to 60 % by weight of zinc oxide, expressed as ZnO, and either not more than 40 % by weight of boron oxide, expressed as B2O3, or not more than 30 % of silicon dioxide, expressed as SiO2, or both.

8. 发明专利

DE2931032A1 未知
公开(公告)号：DE2931032A1
公开(公告)日：1980-02-14
申请号：DE2931032
申请日：1979-07-31
申请人： HITACHI LTD
发明人： MUKAI KIICHIRO , HARADA SEIKI , MURAMATSU SHINICHI , HIRAIWA ATSUSHI , TAKAHASHI SHIGERU , USAMI KATSUHISA , IWATA SEIICHI , ITO SATORU , YOSHIMI TAKEO
IPC分类号： H01L21/768 , H01L21/312 , H01L21/316 , H01L21/318 , H01L23/29 , H01L23/31 , H01L23/522 , H01L23/30
摘要： A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm3.

9. 发明专利

DE3853890D1 未知
公开(公告)号：DE3853890D1
公开(公告)日：1995-07-06
申请号：DE3853890
申请日：1988-01-19
申请人： HITACHI LTD , HITACHI SERVICE ENG
发明人： FUKUDA TAKUYA , MOCHIZUKI YASUHIRO , MOMMA NAOHIRO , TAKAHASHI SHIGERU , SUZUKI NOBORU , SONOBE TADASI , CHIBA KIYOSI , SUZUKI KAZUO
IPC分类号： C23C16/511 , H01J37/32 , C23C16/50 , C23F4/00
摘要： There is disclosed a plasma operation apparatus which utilizes plasma generated by a microwave cooperative with a magnetic field so as to perform surface operation of a specimen (7, 101, 201) such as semiconductor substrates, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

10. 发明专利

DE3853551D1 未知
公开(公告)号：DE3853551D1
公开(公告)日：1995-05-18
申请号：DE3853551
申请日：1988-05-06
申请人： HITACHI LTD , HITACHI SERVICE ENG
发明人： MOCHIZUKI YASUHIRO , MOMMA NAOHIRO , TAKAHASHI SHIGERU , FUKUDA TAKUYA , SUZUKI NOBORU , SONOBE TADASI , CHIBA KIYOSHI , SUZUKI KAZUO
IPC分类号： C23C16/511 , H01J37/32 , H05H1/46
摘要： A plasma treatment apparatus capable of depositing a desired substance on a substrate (5, 211, 312) to form a thin film is disclosed. Especially, for a plasma treatment apparatus using microwaves, a structure of the apparatus is disclosed with which the film deposition rate and the film quality can be improved and the size of the apparatus can be made small.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式