专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

DE69535427D1 未知
公开(公告)号：DE69535427D1
公开(公告)日：2007-05-03
申请号：DE69535427
申请日：1995-09-04
申请人： HITACHI LTD , HITACHI CABLE
发明人： KATO TAKESHI , TERAOKA TATSUO , KIKUCHI SATORU , AOKI MASAHIRO , OSHIDO YOSHITADA
IPC分类号： G02B6/42 , G02B6/122 , G02B6/30 , H01L33/20 , H01L33/62 , H01S3/00 , H01S5/00 , H01S5/022
摘要： An optical assembly (1) has a substrate (20) and an optical device chip (10). On mutually opposed surfaces (11, 21) of the optical device chip and the substrate, indexes (12, 22) having slope faces are formed. Index passive alignment is performed by using the indexes as positioning reference and by using image measurement.

2. 发明专利

JPH0883955A OPTICAL ASSEMBLY 失效
公开(公告)号：JPH0883955A
公开(公告)日：1996-03-26
申请号：JP21693994
申请日：1994-09-12
申请人： HITACHI LTD , HITACHI CABLE
发明人： KATO TAKESHI , TERAOKA TATSUO , KIKUCHI SATORU , AOKI MASAHIRO , OSHIDA YOSHITADA
IPC分类号： G02B6/122 , G02B6/30 , G02B6/42 , H01L33/20 , H01L33/62 , H01S5/00 , H01S5/022 , H01S3/18 , H01L33/00
摘要： PURPOSE: To provide a high-precision and simple index alignment means for an optical assembly comprising an optical element chip and a substrate. CONSTITUTION: Indexes 12 and 22 comprising a slant surface are formed on surfaces 11 and 21 where an optical element chip 10 and a substrate 20 comprising an optical assembly 1 mutually face, and these indexes are used as a positioning criterion in conducting an index alignment by image instrumentation. Consequently, indexes made up of the slant surface provide a high-precision and easy means of forming the chip and the substrate. In addition, because of high-precision and simple image instrumentation processing, alignment accuracy is improved and assembly cost is reduced.

3. 发明专利

DE69331979T2 未知
公开(公告)号：DE69331979T2
公开(公告)日：2003-01-23
申请号：DE69331979
申请日：1993-02-26
申请人： HITACHI LTD
发明人： AOKI MASAHIRO , SANO HIROHISA , SAKANO SHINJI , SUZUKI MAKOTO , TAKAHASHI MAKOTO , UOMI KAZUHISA , IDO TATEMI , TAKAI ATSUSHI
IPC分类号： G02F1/017 , H01L31/0352 , H01L33/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50 , H01L21/20
摘要： Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.

4. 发明专利

DE69331979D1 未知
公开(公告)号：DE69331979D1
公开(公告)日：2002-07-11
申请号：DE69331979
申请日：1993-02-26
申请人： HITACHI LTD
发明人： AOKI MASAHIRO , SANO HIROHISA , SAKANO SHINJI , SUZUKI MAKOTO , TAKAHASHI MAKOTO , UOMI KAZUHISA , IDO TATEMI , TAKAI ATSUSHI
IPC分类号： G02F1/017 , H01L31/0352 , H01L33/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50 , H01L21/20
摘要： Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.

5. 发明专利

JP2003046190A Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：JP2003046190A
公开(公告)日：2003-02-14
申请号：JP2001228866
申请日：2001-07-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： AOKI MASAHIRO
IPC分类号： G02B6/14 , G02B6/12 , G02B6/122 , H01S5/02 , H01S5/026 , H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/22
CPC分类号： H01S5/22 , H01S5/0203 , H01S5/0264 , H01S5/0265 , H01S5/06256 , H01S5/0655 , H01S5/1064 , H01S5/125 , H01S2301/185
摘要： PROBLEM TO BE SOLVED: To provide an element structure that can realize a short resonator laser which can be operated at a high speed with a low-threshold current or a wavelength tunable laser which is excellent in wavelength stability, and to provide a method of manufacturing the structure. SOLUTION: In a partial portion or the whole portion of the waveguide of the short resonator of the short resonator laser, the width of the waveguide is set to a lateral multi-mode permissible width. In this way, the element structure that can improve the gain of the short resonator laser and can reduce the electric resistance and thermal resistance of the laser while the characteristics of the laser are maintained is devised. In this case, the mode conversion loss in the laser resonator can be reduced by utilizing a self-image forming effect based on a multi-mode interference effect and, in addition, the light emitting edge of the laser becomes an ideal structure for the connection with an optical fiber, etc., because the light intensity distribution at the emitting edge becomes the lowest-order mode having a single peak. In addition, a method by which a laser resonator containing a multi-mode interference waveguide section can be manufactured with high dimensional accuracy by using both lithography and dry etching is also devised.
摘要翻译：要解决的问题：提供一种能够实现能够以波长稳定性优异的低阈值电流或波长可调谐激光器高速运转的短谐振器激光器的元件结构，并提供制造方法结构。解决方案：在短谐振器激光器的短谐振器的波导的局部或整个部分中，将波导的宽度设定为横向多模允许宽度。以这种方式，设计了可以改善短谐振器激光器的增益并且可以在保持激光器的特性的同时降低激光器的电阻和热阻的元件结构。在这种情况下，通过利用基于多模式干涉效应的自图像形成效果，可以降低激光谐振器中的模式转换损耗，另外，激光的发光边缘成为连接的理想结构由于发射边缘处的光强分布变为具有单峰的最低阶模式，所以具有光纤等。此外，还设计了通过使用光刻和干蚀刻二者均可以通过使用高尺寸精度制造包含多模干涉波导部分的激光谐振器的方法。

6. 发明专利

JP2000068983A OPTICAL TRANSMITTER 失效
公开(公告)号：JP2000068983A
公开(公告)日：2000-03-03
申请号：JP23524498
申请日：1998-08-21
申请人： HITACHI LTD
发明人： AOKI MASAHIRO , SASAKI SHINYA
IPC分类号： G02F1/025 , H01S3/10 , H01S5/00 , H01S5/026 , H01S5/30 , H04J14/00 , H04J14/02
摘要： PROBLEM TO BE SOLVED: To provide an optical transmitter to realize pre-emphasis in wavelength multiplex communication by an easy method and its simple realization method and to provide an optical transmitter with high reliability where a wavelength of a multiplexed signal light is unchanged even over aging in a semiconductor laser and its simple realization method. SOLUTION: The optical transmitter is obtained by a very simple method where a light intensity difference at a receiving end between channels caused by wavelength dependence of a guide path loss in a transmission line in a wavelength multiplex optical communication device 100 is corrected by adjusting an optical output of a transmitter of each channel through the use of an optical attenuator 108 integrated with a transmission light source. Furthermore, the optical transmitter is obtained where stability of each channel wavelength is easily realized by adjusting optical output fluctuation aver aging in the semiconductor laser through the use of the integrated optical attenuator 108.

7. 发明专利

JP2000068597A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000068597A
公开(公告)日：2000-03-03
申请号：JP23383198
申请日：1998-08-20
申请人： HITACHI LTD
发明人： OYA AKIRA , KOMORI MASAAKI , TSUCHIYA TOMONOBU , SATO HIROSHI , AOKI MASAHIRO
IPC分类号： H01L33/06 , H01L33/30 , H01S5/00 , H01S5/30 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To manufacture a reliable semiconductor laser element by preventing degradation of an element caused by the fact that, in a semiconductor laser, Zn which is an impurity element diffuses as chose to as an active layer from a high-concentration p-type InGaAs contact layer or a high-concentration p-type Inp substrate. SOLUTION: A supperlattice intermediate layer 17 is formed at a high- concentration p-type InGaAs contact layer 18 or between a high-concentration p-type InP substrate and a p-type Inp clad layer 16. The super lattice intermediate layer 17 comprises a super lattice of InAs and GaAs or InAs and GaP, while either of two kinds of semiconductor layer forming it is modulatedly doped with p-type impurity element. Thus, diffusion Zn from a p-type contact layer or p-type substrate to the proximity of an active layer is suppressed, allowing manufacture of reliable semiconductor laser element with less degradation of element characteristics.

8. 发明专利

JPH08340147A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH08340147A
公开(公告)日：1996-12-24
申请号：JP14585695
申请日：1995-06-13
申请人： HITACHI LTD
发明人： SAGAWA MISUZU , HIRAMOTO KIYOHISA , TOYONAKA TAKASHI , SHINODA KAZUNORI , UOMI KAZUHISA , AOKI MASAHIRO , SATO HIROSHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/223 , H01S3/18
摘要： PURPOSE: To obtain a semiconductor laser, which does not cause a mode loss in association with a mode conversion and is stable in a transverse mode, by a method wherein the width of a region of a high effective refractive index is changed along the direction of a resonator and the width is changed in a state that a primary differential in the direction of the resonator is continuous in the direction of the resonator and has no inflection point. CONSTITUTION: An N-type InGaP current constricting layer 9 is selectively grown by an MOVPE method. Then, a wafer is taken out from a growth furnace and an oxide film used as a selective growth mask is etched away. Then, a P-type GaAs contact layer 10 is formed by an MBE method or the like. After a P side electrode 11 and an N side electrode 12 are formed, a laser element having a resonator of a length of about 900μm is obtained by a cleavage method. Then, a low-reflective film, which has a thickness of λ/4 (λ: oscillation wavelength) and consists of an Al2 O3 film, is formed on the front surface (the side of a Ws (L)) of the element and a high reflective film, which consists of an SiO2 film and an a-Si film and is formed into a four-layer film, is formed on the rear surface [the side of a Ws (O)] of the element. Then, the element is bonded on a heat sink facing its bonding surface downward.

9. 发明专利

JPH08288583A SEMICONDUCTOR OPTICAL ELEMENT AND FABRICATION THEREOF 失效
公开(公告)号：JPH08288583A
公开(公告)日：1996-11-01
申请号：JP8787295
申请日：1995-04-13
申请人： HITACHI LTD
发明人： SUZUKI MAKOTO , AOKI MASAHIRO , KANETAKE TATSURO , OHIRA MASATERU
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE: To obtain a high quality high performance optical element or optical integrated element by enhancing the controllability of the compositional ratio of group III element in a mixed crystal semiconductor layer containing In there by growing a core layer having a large critical film thickness. CONSTITUTION: Using a semiconductor substrate 1 on which an insulating mask 2' having mask width varied partially in the direction of optical axis is formed along with a semiconductor mask 3, a semiconductor layer is formed including a thin clad layer 10 and core layers 5, 6 where the thickness of layer grown on the substrate 1 varies smoothly in the direction of optical axis. With such structure, controllability of the compositional ratio of group II element in a mixed crystal semiconductor layer is enhanced resulting in a semiconductor crystal having large thickness of critical film and a high quality optical integrated element.

10. 发明专利

JPH08274368A SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08274368A
公开(公告)日：1996-10-18
申请号：JP7294995
申请日：1995-03-30
申请人： HITACHI LTD
发明人： KANETAKE TATSURO , SUZUKI MAKOTO , NISHIMURA SHINJI , AOKI MASAHIRO
IPC分类号： H01L33/12 , H01L33/14 , H01L33/16 , H01L33/24 , H01L33/30 , H01L33/44 , H01S5/00 , H01L33/00 , H01S3/18
摘要： PURPOSE: To provide a semiconductor optical device which has an effective current constriction structure due to an insulating layer and is capable of securing a sufficiently large contact area with an electrode, and manufacture which enables easy production of such semiconductor optical device. CONSTITUTION: A dielectric layer 112 having stripe-like grooves is formed on the surface of a semiconductor substrate 102. On the surface of the semiconductor substrate 102 exposed through the stripe-like grooves, a semiconductor buffer layer 103, a semiconductor active layer 104 and a semiconductor clad layer 105 are sequentially formed. The semiconductor clad layer 105 has an inverted-trapezoid cross section. Since the semiconductor clad layer 105 has an inverted-trapezoid cross section, a sufficiently large contact area with a semiconductor cap layer is provided. Also, since the width of the semiconductor active layer 104 is specified by a groove provided in the insulating layer 112, a leak current to portions other than the semiconductor active layer 104 may be effectively restrained.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式