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1. 发明专利

JP2000068587A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JP2000068587A
公开(公告)日：2000-03-03
申请号：JP23524598
申请日：1998-08-21
申请人： HITACHI LTD
发明人： SAGAWA MISUZU , HIRAMOTO KIYOHISA
IPC分类号： H01S5/00 , H01S5/30
摘要： PROBLEM TO BE SOLVED: To reduce a longitudinal mode hopping amount generated by an environmental temperature change and drive current change by providing at least one or more layers which become absorption to laser beam between an active layer and a board. SOLUTION: For example, in the structure of a superlattice absorption layer 2, three In(1-x)Ga(x) As compression strain quantum well layers 16 and four In(1-x)Ga(x)P(1-y) tensile strain barrier layers 17 are held between strain-free InGaAsP layers 18. Transition energy between first levels between electron of a quantum well layer constituting the superlattice absorption layer and a heavy hole is about 1.0 μm and becomes absorption to light of 0.98 μm. At least one or more layers which become absorption to laser beam are provided between an active layer and a substrate in this way. Furthermore, a semiconductor board is constituted of GaAs and a layer which becomes absorption is constituted of In(y)Ga(1-y) As and the In composition (y) is set at 0.15 or more. The layer thickness which becomes absorption is set at 50 nm or less.

2. 发明专利

JPH09307181A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH09307181A
公开(公告)日：1997-11-28
申请号：JP12433396
申请日：1996-05-20
申请人： HITACHI LTD
发明人： SAGAWA MISUZU , HIRAMOTO KIYOHISA , TOYONAKA TAKASHI , KIKAWA TAKESHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To prevent mode loss which is to be caused by mode conversion and stabilize a transverse mode, by using a structure wherein the stripe width of a region of high effective refractive index is changed in accordance with an exponential function along the resonator direction. SOLUTION: A semiconductor laser device has a stripe type region whose effective refractive index is higher than other parts, along the resonator direction. The width of the region of high effective refractive index is changed in accordance with an exponential function, along a resonator direction. That is, the width of the region of high effective refractive index is set to be smaller than or equal to 3.5μm on one end surface side of the resonator, and is set to be greater than or equal to 5μm on the other end surface side of the resonator. Since the stripe is wide in the front surface wherein high light density becomes problem, and the light spot is enlarged, light density is reduced. Since a back end surface whose light density is comparatively small is constituted as a narrow stripe, the transverse mode can be stabilized. Therefore, a high output and high reliability laser is realized.

3. 发明专利

JPH07162083A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07162083A
公开(公告)日：1995-06-23
申请号：JP30889393
申请日：1993-12-09
申请人： HITACHI LTD
发明人： TSUCHIYA TOMONOBU , TANIWATARI TAKESHI , KOMORI MASAAKI , HIRAMOTO KIYOHISA , SAGAWA MISUZU
IPC分类号： H01S5/00 , H01S5/16 , H01S3/18
摘要： PURPOSE:To improve the breakdown level of an element end surface which is caused by laser light, and enhance the life of an element, by diffusing Zn from the radiation end surface side of an InGaP active layer toward the inside, and making the light wavelength of an active layer part in a diffusion region shorter than that of a nondiffusion region. CONSTITUTION:After a multilayered structure composed of a buffer layer 2, an N-type AlGaInP clad layer 3, an undoped In0.5Ga0.5P active layer 4, and a P-type AlGaInP clad layer 5 is growned on an N-type GaAs substrate 1, a mesa structure 6 is formed, and a current constriction layer 7, a contact layer 8, a P side electrode 9, and an N side electrode 10 are formed. After chip type cleavage, a diffusion region 11 is formed by diffusing Zn from a cleavage surface. The doping concentration of In0.5Ga0.5P on the cleavage end surface is 1E18cm , and the diffusion depth is 0.2mum. The active layer wavelength of the cleavage end surface is reduced, and the energy gap is increased. Thereby the breakdown level of the laser end surface at the time of high output is enlarged, and the life of an element can be improved.

4. 发明专利

JPH07111365A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07111365A
公开(公告)日：1995-04-25
申请号：JP25671193
申请日：1993-10-14
申请人： HITACHI LTD
发明人： TSUCHIYA TOMONOBU , TANIWATARI TAKESHI , KOMORI MASAAKI , HIRAMOTO KIYOHISA , SAGAWA MISUZU
IPC分类号： H01S5/00 , H01S5/042 , H01S3/18
摘要： PURPOSE:To enlarge a laser edge and its vicinity in energy gap so as to protect it against damage caused by laser ray by a method wherein N-type dopant such as Se, Si or the like is diffused into the emission edge of a semiconductor laser. CONSTITUTION:A semiconductor laser is provided with a GaAlAs clad layer 7, InGaAs/GaAs quantum well active layers 5 and 6, a GaAs contact layer 10, and electrodes 11 and 12 formed on a GaAs substrate 1, wherein N-type dopant such as Se (e.g. dimethyl selenium, diethyl selenium), Si (e.g. dimethyl silicon, diethyl silicon) or the like is diffused into the emission edge of the semiconductor laser. Emitted light in the active layers 5 and 6 located in a diffusion region grows shorter in wavelength than that in the active layers 5 and 6 located in a non-diffusion region and also shorter than the laser rays of a semiconductor laser in wavelength. By this setup, a laser edge and its vicinity can be easily provided with a large energy gap, thus increasing the resistance to damage caused by laser ray.

5. 发明专利

JPH06232500A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH06232500A
公开(公告)日：1994-08-19
申请号：JP1988893
申请日：1993-02-08
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , TSUJI SHINJI , SAGAWA MISUZU , HIRAMOTO KIYOHISA , TSUCHIYA TOMONOBU
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To enlarge a laser beam shape only in the edge plane area of a semiconductor laser and increase the light output of the semiconductor laser by providing an SiO2 film in the element central area excluding the vicinity of the semiconductor laser edge plane and permitting the element to have a structure which has thick activating layer only in the central area and thin activating layer in the vicinity of the edge plane. CONSTITUTION:An SiO2 pattern with a stripe-shaped window is provided except in an area to be the laser edge plane on an (n) type GaAs substrate, a buffer layer 4, a clad layer 5, a multi quantum well activating layer 6, a clad layer 7 and a contact layer 8 are successively crystal-grown on the pattern. Then, after etching the contact layer 8 and a part of the clad layer 7 using an SiO2 film formed by permitting the SiO2 to pass through the center of the stripe- shaped window as a mask, a block layer 11 is selectively grown in an area which has no SiO2 film. Then after removing the SiO2 film, a burying layer 12 and a cap laser 13 are formed, Au electrodes 14 are formed on the front and rear planes of the wafer and a laser chip is provided by cutting the area with not SiO2 pattern.

6. 发明专利

JPH09326526A SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME 失效
公开(公告)号：JPH09326526A
公开(公告)日：1997-12-16
申请号：JP14396396
申请日：1996-06-06
申请人： HITACHI LTD
发明人： HIRAMOTO KIYOHISA , SAGAWA MISUZU , TOYONAKA TAKASHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device in which a ridge is formed in an area other than around a laser end face and a quantum well structure consisting of an active layer which is not positioned around the ridge and an active layer of the laser end face is made in a mixed crystal state, thereby making the active layer of the laser end face transparent for a laser beam with excellent controllability without causing damages or rapid deterioration to the boundary face. SOLUTION: On a substrate 1, a buffer layer 2, a clad layer 3, a distortion quantum well active layer 4 constructed by a barrier layer and a strained quantum well layer, a clad layer 5, an optical waveguide and etch stop layer 6, and a clad layer 7 are sequentially formed by an MOCVD method. An SiO2 oxide layer 15 is formed on the clad layer 7, and the clad layer 7 is etched with concentration hydrochloric acid by using the layer 15 as a mask, thereby forming a ridge. Further, the optical waveguide and etch stop layer 6 is removed. After that, the substrate on which the ridge is formed is conveyed into an ion implanter and a hydrogen ion is implanted so that the quantum well structure except for a part around the ridge has the mixed crystal. The active layer of the end face can be made transparent for the laser beam.

7. 发明专利

JPH09298337A SEMICONDUCTOR DISTRIBUTION BRAGG REFLECTING MIRROR AND SURFACE LIGHT EMITTING TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPH09298337A
公开(公告)日：1997-11-18
申请号：JP11456996
申请日：1996-05-09
申请人： HITACHI LTD
发明人： SHINODA KAZUNORI , SAGAWA MISUZU , HIRAMOTO KIYOHISA , KONDO MASAHIKO , UOMI KAZUHISA
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor distribution Bragg reflecting mirror which has high reflectivity with a small number of layers, a surface light emitting semiconductor laser using the semiconductor distribution Bragg reflecting mirror as a reflecting mirror, and an application system such as an optical interconnection using the surface light emitting semiconductor laser as a light source. SOLUTION: A periodical structure (13 periods) wherein In0.42 Ga0.58 P layers 12 having a film thickness of 104nm and tensile strain of 0.3% and In0.05 Ga0.95 As layers 13 having a film thickness of 90nm, compression strain of 0.35% are alternately laminated is formed on a GaAs substrate 1 by using an organic metal vapor growth method. Therefore, a thin semiconductor distribution Bragg reflecting mirror having high reflectivity can be provided, and the performance of a surface light emitting type semiconductor laser, a surface light emitting type light emitting diode, a light receiving element, etc., can be improved. The light emitting type semiconductor laser can be used in an application system such as an optical interconnection.

8. 发明专利

JPH09148671A SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH09148671A
公开(公告)日：1997-06-06
申请号：JP30875695
申请日：1995-11-28
申请人： HITACHI LTD
发明人： TOYONAKA TAKASHI , SAGAWA MISUZU , HIRAMOTO KIYOHISA , SHINODA KAZUNORI , NOMOTO ETSUKO
IPC分类号： H01S5/00 , H01S5/227 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To obtain a ridge waveguide-type semiconductor laser which is capable of oscillating stably in a signal lateral mode outputting a high output power even if a laser beam is enlarged in beam diameter so as to be enhanced in optical damage level. SOLUTION: A ridge waveguide-type semiconductor laser is equipped with a double-hetero structure equipped with an active layer which emits light, a stripe-like optical waveguide layer 6 which is set higher in refractive index than its surroundings so as to trap light in a direction in parallel with a substrate, a ridge which is provided above the optical waveguide layer 9 to guide carriers to the active layer 4, and a current block layer 10 buried in the side face of the ridge. A part or all of the optical waveguide layer 6 is set larger in width than a part of the ridge which comes into contact with the optical waveguide layer 6. A substrate 1 is set N-type in polarity, and the side faces of the ridge are made up with a (111) A plane and a (111) B plane.

9. 发明专利

JPH08340146A SURFACE EMITTING TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPH08340146A
公开(公告)日：1996-12-24
申请号：JP14585595
申请日：1995-06-13
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , SHINODA KAZUNORI , OKUNO YAE , SAGAWA MISUZU , HIRAMOTO KIYOHISA
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S3/18
摘要： PURPOSE: To provide a long-wavelength band surface emitting type semiconductor laser, which oscillates in a continuous operation in a low threshold current and has a high reliability, by a method wherein a semiconductor multilayer reflecting mirror, which is high in reflectivity and does not contain Al elements, is realized. CONSTITUTION: A long-wavelength band laminated structure, which consists of an InGaAsP layer and an InP layer and has an active layer 5 which transmits a laser beam of a wavelength in the range of a wavelength of 1.25 to 1.65μm, and a semiconductor multilayer reflecting mirror 2 consisting of a combination of an InGaP layer and a GaAs layer or a combination of an InGaAsP layer and a GaAs layer are integrally constituted by a direct bonding system. Accordingly, a surface emitting type semiconductor laser, which has the semiconductor multilayer reflecting mirror which is high in reflectivity and does not contain chemically very active Al elements, and generates a laser beam of a wavelength of 1.25 to 1.65μm can be provided. As a result, the realization of the mirror 2 has an effect to the the improvement of the reliability of the long-wavelength band surface emitting type semiconductor laser, which oscillates in a continuous operation a low threshold current.

10. 发明专利

JPH08204289A SURFACE EMISSION TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPH08204289A
公开(公告)日：1996-08-09
申请号：JP1347695
申请日：1995-01-31
申请人： HITACHI LTD
发明人： SHINODA KAZUNORI , HIRAMOTO KIYOHISA , SAGAWA MISUZU , UOMI KAZUHISA , TSUCHIYA TOMONOBU
IPC分类号： H01L29/06 , H01S5/00 , H01S5/042 , H01S3/18
摘要： PURPOSE: To provide a highly efficient high-output surface emission type semiconductor laser having a small size and low threshold. CONSTITUTION: In a 0.98-mm band surface emission type semiconductor laser having an InGaAs strained quantum well active layer 4, a barrier layer is constituted of a tensile strain InGaAsP layer 5 and the layer 4 is constituted of four or more quantum well layers. Since a less defective multiquantum well layer can be provided when the layer 4 is constituted in such a way, the efficiency and output of the semiconductor laser can be improved and the size and threshold current of the laser can be reduced.

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