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1. 发明专利

JP2002175770A SAMPLE CHAMBER FOR GAS EXHAUSTION AND CIRCUIT PATTERN FORMING DEVICE USING THE SAME 失效
公开(公告)号：JP2002175770A
公开(公告)日：2002-06-21
申请号：JP2000373757
申请日：2000-12-08
申请人： HITACHI LTD , CANON KK
发明人： MIZUOCHI MAKI , FUKUSHIMA YOSHIMASA , INOUE MITSURU
IPC分类号： G21K5/04 , G03F1/76 , G03F1/78 , G03F1/84 , G03F7/20 , H01J37/18 , H01J37/20 , H01J37/305 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a sample chamber for gas exhaustion to keep the area around the sample at a constant, high degree of vacuum by performing a stable gas exhaustion and also a circuit pattern forming device which can draw images accurately over the whole sample area. SOLUTION: The sample chamber for gas exhaustion is composed of a top table 21 installed in the sample chamber 10 and furnished with a recess for placing of a sample 8 and a groove part surrounding the recess, a stage 20 retaining the top table 21 and movable together with it in the directions front and rear to the left and right, and up and down, a chamber lid 11 covering the over-part of the chamber 10 including the top table 21, and an exhaust pipe in communication with the groove part and exhausting the gas from between the undersurface of the lid 11 and the oversurface of the top table 21 including the sample 8.

2. 发明专利

JP2001126651A APPARATUS FOR ELECTRON BEAM LITHOGRAPHY 失效
公开(公告)号：JP2001126651A
公开(公告)日：2001-05-11
申请号：JP30083699
申请日：1999-10-22
申请人： HITACHI LTD , CANON KK
发明人： TSUJI HIROSHI , SOMETA YASUHIRO , SAITO NORIO , FUKUSHIMA YOSHIMASA , INOUE MITSURU
IPC分类号： G03F7/20 , H01J37/09 , H01J37/20 , H01J37/305 , H01L21/027 , H02K11/00 , H02K41/03
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for electron beam lithography of which trajectory is not affected by a magnetic field leakage from a permanent magnet used in a guide and drive mechanism of a specimen stage. SOLUTION: A guide mechanism of a specimen stage 16 comprises an air bearing guide, floating over a fixing table 18. The stage 16 is drawn by a permanent magnet 17 toward the fixing table 18 maintaining the stage position. The permanent magnet 17 is shielded by a shield member 21 in order to prevent a magnetic field leakage of the permanent magnet 17 from affecting the position of illuminating the specimen 7 with an electron beam 4. Another shield member 22 is mounted below the electron lens 5 in order to inhibit the magnetic field variation generated above the specimen 7 owing to the movement of the shield member 21 through the leakage. The guide mechanism of the stage is not contacted to prevent any slight distortion of the table member mounting the specimen, so that the stage may be precisely moved to precisely picture the specimen by the electron beam.

3. 发明专利

DE3442844C2 未知
公开(公告)号：DE3442844C2
公开(公告)日：1996-02-22
申请号：DE3442844
申请日：1984-11-23
申请人： HITACHI LTD
发明人： KAKEHI YUTAKA , NAKAZATO NORIO , FUKUSHIMA YOSHIMASA , SHIBATA FUMIO , TSUBONE TSUNEHIKO , KANAI NORIO
IPC分类号： H01L21/677 , B01J3/00 , B01J3/03 , B23Q41/02 , B65G49/07 , C23C14/54 , C23C14/56 , H01J37/18 , H01L21/00 , H01L21/02 , H01L21/67
摘要： A vacuum processing unit and apparatus comprises a buffer chamber that can be evacuated, a processing chamber that can be communicated with said buffer chamber a first sample carrier installed in said buffer chamber, a vacuum opening/closing device provided in the buffer chamber to correspond to the first sample carrier, a vacuum prechamber provided for the buffer chamber via the vacuum opening/closing device, a second sample carrier which carries the sample between the vacuum prechamber and the first sample carrier via the vacuum opening/closing device, and a third sample carrier which carries the sample between said first sample carrier and the processing chamber. The vacuum processing units can be connected in groups via vacuum opening/closing devices provided for the buffer chambers in locations corresponding to the end of the first sample carriers therein. The number of connected processing chambers can be freely changed to meet a change in the process or the manufacturing line.

4. 发明专利

DE3448599B4 Vacuum equipment esp. for IC prodn. 未知
公开(公告)号：DE3448599B4
公开(公告)日：2004-04-08
申请号：DE3448599
申请日：1984-11-23
申请人： HITACHI LTD
发明人： KAKEHI YUTAKA , NAKAZATO NORIO , FUKUSHIMA YOSHIMASA , SHIBATA FUMIO , TSUBONE TSUNEHIKO , KANAI NORIO
IPC分类号： B01J3/00 , B01J3/03 , C23C14/54 , C23C14/56 , H01J37/18 , B65G49/07 , H01L21/68
摘要： A vacuum treatment device includes an evacuatable buffer chamber which can be connected to a treatment chamber and which contains a first sample holder and an opening/closing device for the vacuum corresp. to the first sample holder. A vacuum pre-chamber is connected to the buffer chamber via the opening/closing device. A second sample to holder transports the sample between the pre-chamber and the first sample holder via the opening/closing device. A third sample holder transports the sample between the first sample holder and the treatment chamber.

5. 发明专利

DE3448572C2 Vacuum equipment esp. for IC prodn. 未知
公开(公告)号：DE3448572C2
公开(公告)日：1998-07-23
申请号：DE3448572
申请日：1984-11-23
申请人： HITACHI LTD
发明人： KAKEHI YUTAKA , NAKAZATO NORIO , FUKUSHIMA YOSHIMASA , SHIBATA FUMIO , TSUBONE TSUNEHIKO , KANAI NORIO
IPC分类号： B01J3/00 , B01J3/03 , C23C14/54 , C23C14/56 , H01J37/18 , H01L21/3065
摘要： A vacuum treatment device includes an evacuatable buffer chamber which can be connected to a treatment chamber and which contains a first sample holder and an opening/closing device for the vacuum corresp. to the first sample holder. A vacuum pre-chamber is connected to the buffer chamber via the opening/closing device. A second sample to holder transports the sample between the pre-chamber and the first sample holder via the opening/closing device. A third sample holder transports the sample between the first sample holder and the treatment chamber.

6. 发明专利

DE3442844A1 未知
公开(公告)号：DE3442844A1
公开(公告)日：1985-06-05
申请号：DE3442844
申请日：1984-11-23
申请人： HITACHI LTD
发明人： KAKEHI YUTAKA , NAKAZATO NORIO , FUKUSHIMA YOSHIMASA , SHIBATA FUMIO , TSUBONE TSUNEHIKO , KANAI NORIO
IPC分类号： H01L21/677 , B01J3/00 , B01J3/03 , B23Q41/02 , B65G49/07 , C23C14/54 , C23C14/56 , H01J37/18 , H01L21/00 , H01L21/02 , H01L21/67 , H05H1/46 , H01L21/306 , H01L21/68 , C23F1/08 , C23C11/00 , C23C13/08 , C23C15/00
摘要： A vacuum processing unit and apparatus comprises a buffer chamber that can be evacuated, a processing chamber that can be communicated with said buffer chamber a first sample carrier installed in said buffer chamber, a vacuum opening/closing device provided in the buffer chamber to correspond to the first sample carrier, a vacuum prechamber provided for the buffer chamber via the vacuum opening/closing device, a second sample carrier which carries the sample between the vacuum prechamber and the first sample carrier via the vacuum opening/closing device, and a third sample carrier which carries the sample between said first sample carrier and the processing chamber. The vacuum processing units can be connected in groups via vacuum opening/closing devices provided for the buffer chambers in locations corresponding to the end of the first sample carriers therein. The number of connected processing chambers can be freely changed to meet a change in the process or the manufacturing line.

7. 发明专利

JP2008103367A Electron beam drawing device 有权
标题翻译：电子束绘图装置
公开(公告)号：JP2008103367A
公开(公告)日：2008-05-01
申请号：JP2008010271
申请日：2008-01-21
申请人： Canon Inc , Hitachi Ltd , キヤノン株式会社 , 株式会社日立製作所
发明人： TSUJI HIROSHI , SOMETA YASUHIRO , SAITO NORIO , FUKUSHIMA YOSHIMASA , INOUE MITSURU
IPC分类号： H01J37/20 , H01J37/09 , H01J37/16 , H01J37/305
CPC分类号： G03F7/70758 , G03F7/70858
摘要： PROBLEM TO BE SOLVED: To provide an electron beam drawing device capable of preventing effect on an electron beam orbit given by a leakage magnetic field from a permanent magnet when the permanent magnet is used for guide and drive mechanisms of a sample stage.
SOLUTION: An air bearing guide or the like is used for the guide mechanism of the sample stage 16, and a stage position is held by attracting the stage 16 floating above a surface plate 18 to a surface plate 18 side by the permanent magnet 17. The permanent magnet 17 is magnetically shielded by a shield member 21 in order to prevent effect of the leakage magnetic field from the permanent magnet 17 on an irradiation position of an electron beam 4 onto the sample 7. Furthermore, a shield member 22 is also provided beneath an electron lens in order to suppress variation of a magnetic field above the sample 7 generated when the shield member 21 moves in the leakage magnetic field from the electron lens 5.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种电子束描绘装置，当永磁体用于样品台的引导和驱动机构时，能够防止对来自永磁体的漏磁场给出的电子束轨道的影响。解决方案：空气轴承导向件等用于样品台16的引导机构，并且通过将浮动在表面板18上方的平台16吸附到表面板18侧来保持平台位置，通过永久永磁体17被屏蔽部件21磁屏蔽，以防止来自永磁体17的泄漏磁场对电子束4在样品7上的照射位置的影响。此外，屏蔽部件22 还设置在电子透镜下方，以便抑制当屏蔽构件21在来自电子透镜5的泄漏磁场中移动时产生的样品7上方的磁场的变化。（C）2008，JPO和INPIT

8. 发明专利

JP2001077004A ALIGNER AND ELECTRON BEAM ALIGNER 失效
公开(公告)号：JP2001077004A
公开(公告)日：2001-03-23
申请号：JP24940399
申请日：1999-09-03
申请人： HITACHI LTD
发明人： YOSHITAKE YASUHIRO , MATSUMOTO SHUNICHI , FUKUSHIMA YOSHIMASA , KATO TAKESHI
IPC分类号： H01J37/305 , G03F7/20 , G03F9/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To allow an exposure circuit pattern to be exposed with precision on the exposure unit on a substrate which is to be exposed by calculating based on an XY coordinate of a stage wherein the position of alignment mark is measured with a measuring means based on the image signal converted by a photoelectric conversion means. SOLUTION: A signal processing circuit 502 measures the position of a chip alignment mark in X and Y directions based on intensity change of reflection electron at scanning which corresponds to the scan amount of electron beam 1003 acquired from a plurality of deflection control parts 501. The measured position, in X and Y directions, of the chip alignment mark is calculated with an optical detecting device 60 as well as a position detecting circuit 51 based on the coordinate of stages 31 and 32 for measurement with laser range finders 301 and 302. Thus, an exposure circuit pattern is exposed with precision on the exposure unit of a substrate 4 which is to be exposed.

9. 发明专利

JPH1084030A VACUUM PROCESSOR AND SEMICONDUCTOR SUBSTRATE PROCESSING METHOD 失效
公开(公告)号：JPH1084030A
公开(公告)日：1998-03-31
申请号：JP24011897
申请日：1997-09-05
申请人： HITACHI LTD
发明人： KAKEHI YUTAKA , NAKAZATO NORIO , FUKUSHIMA YOSHIMASA , SHIBATA FUMIO , TSUBONE TSUNEHIKO , KANAI NORIO
IPC分类号： H01L21/677 , H01L21/02 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To increase the yield of substrates thereby cutting down the processing time by a method wherein in order to parallel processing the substrates aligned with orientation flat, the substrates are carried to respective vacuum processing chambers through the intermediary of vacuum carrier spaces so as to process respective carried substrates one by one in the vacuum processing chambers. SOLUTION: The vacuum processing chambers 20 in a vacuum processor assumed as one module are continuously connected exceeding three modules through the intermediary of a vacuum opening and closing means 40, 41 so that the substrates 30 aligned with orientation flat may be parallel carried to vacuum processing chambers 20 in the front and middle stages through the intermediary of vacuum carrier spaces corresponding to the substrate processing mode. Next, the substrates 30 carried to respective vacuum processing chambers 20 are processed one by one in respective vacuum processing chambers 20. Through these procedures, the yield of the substrates 30 can be increased thereby enabling the processing time to be cut down.

10. 发明专利

JPH09246366A ELECTROSTATIC CLAMPING DEVICE AND ELECTRON BEAM DRAWING DEVICE PROVIDED THEREWITH 失效
公开(公告)号：JPH09246366A
公开(公告)日：1997-09-19
申请号：JP4581796
申请日：1996-03-04
申请人： HITACHI LTD
发明人： MATSUSHIMA MASARU , SATO HIDETOSHI , SAKAI HIROYUKI , IKEDA KAZUNORI , FUKUSHIMA YOSHIMASA , MIZUNO KAZUI , ITO HIROYUKI , SAITO NORIO
IPC分类号： B23Q3/15 , H01L21/027 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To provide an electron beam drawing device equipped with an electrostatic clamping device which is capable of restraining the surface of a wafer from increasing in electric potential so as not to influence the orbit of an electron beam and preventing foreign objects from being formed as much as possible. SOLUTION: A conductive jig 7 is brought into contact with the side or rear of a target wafer 1, an object to be clamped, and then obliquely driven by a piezoelectric device so as to ground the target wafer 1 well in reproducibility. At this point, The conductive jig 7 is controlled in amount of drive measuring the potential of the wafer 1. Furthermore, an exhausting mean is provided around the conductive jig 7. The wafer 1 is surely grounded by electrically connecting it to the jig 7 making sure of its potential. The conductive jig 7 is controlled in the amount of drive by the piezoelectric device 8, whereby the wafer 1 with a surface of various states is least damaged and properly grounded generating least foreign objects. Foreign objects produced when notches are provided can be removed.

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