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1. 发明专利

SG75976A1 Process for manufacturing semiconductor integrated circuit device 未知
公开(公告)号：SG75976A1
公开(公告)日：2000-10-24
申请号：SG1999003824
申请日：1999-08-05
申请人： HITACHI LTD
发明人： SAITO MASAYOSHI , YOSHIDA MAKOTO , KAWAKAMI HIROSHI , UMEZAWA TADASHI
IPC分类号： H01L21/28 , H01L21/02 , H01L21/60 , H01L21/768 , H01L21/8242 , H01L27/00 , H01L27/108 , H01L21/336 , H01L21/8239 , H01L27/105
摘要： Described is a process for manufacturing a semiconductor integrated circuit device, to expose semiconductor regions over the surface of a semiconductor substrate in self-alignment to wiring lines (including gate electrodes) and element isolating regions when forming connection holes. The process includes a first step of coating a semiconductor substrate with a first conductive film, a first insulating film and a second insulating film sequentially, and patterning these films to form first conductive film patterns. A third insulating film is then formed over the semiconductor substrate, on the side walls of the first conductive film patterns and over the second insulating film, and a fourth insulating film is formed over the third insulating film. After forming the third and fourth insulating films, a mask for a first opening between adjoining ones of the first conductive film patterns is formed over the fourth insulating film, and the fourth insulating film exposed from the first opening of the mask is etched, under conditions that the fourth insulating film is more easily etched off than the third and second insulating films, to form a second opening in the fourth insulating film. Thereafter, the third insulating film, as exposed through the second opening, is anisotropically etched under conditions that the third insulating film is more easily etched off than the first insulating film and the fourth insulating film, to form a third opening.

2. 发明专利

SG54456A1 Semconductor integrated circuit device and method for manufacturing the same 未知
公开(公告)号：SG54456A1
公开(公告)日：1998-11-16
申请号：SG1997000019
申请日：1997-01-07
申请人： HITACHI LTD
发明人： NARUI SIEJI , UDAGAWA TETSU , TAKAKURA IRUMA-SHI , KAJIGAYA KAZUHIKO , YOSHIDA MAKOTO
IPC分类号： H01L21/768 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L27/04 , H01L21/44
摘要： The sheet resistance of a gate electrode 8 A (a word line) of memory cell selection MISFET Q a DRAM and a sheet resistance of bit lines BL 1 , BL 2 are, respectively, 2 Omega/□ or below. Interconnections of a peripheral circuit are formed during the step of forming the gate electrode 8 A (the word line WL) or the bit lines BL 1 , BL 2 by which the number of the steps of manufacturing the DRAM can be reduced.

3. 发明专利

JP2013105829A Repair device and heater cooling method 审中-公开
标题翻译：维修装置和加热器冷却方法
公开(公告)号：JP2013105829A
公开(公告)日：2013-05-30
申请号：JP2011247425
申请日：2011-11-11
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHIDA MAKOTO , HARIKAE MITSUHIRO
IPC分类号： H05K3/34 , B23K1/00 , B23K3/04 , B23K31/02 , B23K101/42
摘要： PROBLEM TO BE SOLVED: To solve a problem that it takes a long time to cool a heater heat source and a heater unit, which are heated to high temperatures for supplying heat when a component is removed, in a repair device of a surface mounted component such as a BGA.SOLUTION: A method for cooling a heater heat source and a heater unit, which are heated to high temperatures for supplying heat when an electronic component is removed, in a short time is provided. This method shortens the time required for lowering the temperatures to predetermined temperatures and allows a repair device to shift to the next repair work in a short time thereby improving the facility utilization rate of the repair device and reducing the work hours of the repair work.
摘要翻译：要解决的问题：为了解决冷却加热器热源和加热器单元需要很长时间的问题，加热器热源和加热器单元在被去除部件时被加热到用于供热的高温，在表面安装组件，如BGA。解决方案：提供一种用于冷却加热器热源和加热器单元的方法，该方法在短时间内被加热到高温以便在去除电子部件时提供热量。该方法缩短了将温度降低至预定温度所需的时间，并且允许修理装置在短时间内转移到下一个维修工作，从而提高修理装置的设备利用率并减少维修工作的工作时间。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012124201A Soldering mechanism and soldering method 审中-公开
标题翻译：焊接机理和焊接方法
公开(公告)号：JP2012124201A
公开(公告)日：2012-06-28
申请号：JP2010271321
申请日：2010-12-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHIDA MAKOTO , HARIKAE MITSUHIRO
IPC分类号： H05K3/34 , B23K1/00 , B23K3/04 , B23K101/42
摘要： PROBLEM TO BE SOLVED: To provide a soldering mechanism and a soldering method, capable of securely soldering with suppressing work man-hours.SOLUTION: The soldering mechanism for soldering a module component having mounted components with a substrate by solder fused by heating comprises: a first nozzle having a flow channel to blow a heated hot wind into the solder; a second nozzle including an exhaust mechanism having a flow channel to suck the hot wind made to blow from the first nozzle and to exhaust outside the soldering mechanism; a suction nozzle having a heat radiation sheet to radiate heat generated in the component from the component; and a control unit for exhausting the hot wind from the second nozzle to the outside of the soldering mechanism when the first nozzle blows the hot wind, and for operating the suction nozzle, so as to allow the heat radiation sheet to contact to the component.
摘要翻译：要解决的问题：提供一种焊接机构和焊接方法，能够在抑制工作时间的情况下牢固地焊接。解决方案：用于通过加热焊接焊接具有通过焊料熔化的基板的具有安装部件的模块部件的焊接机构包括：具有将加热的热风吹入焊料的流动通道的第一喷嘴; 第二喷嘴，其包括排气机构，所述排气机构具有流动通道，以吸引从所述第一喷嘴吹出的热风并排出所述焊接机构外部; 吸嘴，其具有散热片以辐射来自所述部件的所述部件中产生的热; 以及控制单元，用于当第一喷嘴吹热风时将来自第二喷嘴的热风排出到焊接机构的外部，并且用于操作吸嘴以允许散热片与部件接触。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012054394A Soldering device and soldering method 审中-公开
标题翻译：焊接设备和焊接方法
公开(公告)号：JP2012054394A
公开(公告)日：2012-03-15
申请号：JP2010195549
申请日：2010-09-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HARIKAE MITSUHIRO , YOSHIDA MAKOTO
IPC分类号： H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a repair device that can secure stable repair quality of a surface-mounted component with a small size Exposed Pad.SOLUTION: A surface-mounted component repair device heat-melts, by blowing hot air from its nozzle, a solder connection of a surface-mounted component with an Exposed Pad mounted on a printed circuit board so as to unsolder and re-solder it. The nozzle body shaped to surround the component is heated and moved down onto the printed circuit board so as to surround the component with the Exposed Pad to be mounted when it is heated above the solder melting point, thereby melting the solder at an terminal part of outer periphery of the component. After the solder is completely melted, the nozzle is moved up to re-solder the terminal part of outer periphery of the component and to temporarily fix the component with the Exposed Pad. Subsequently, the component is blown with the hot air from the nozzle to solder the Exposed Pad.
摘要翻译：要解决的问题：提供一种修复装置，其可以利用小尺寸曝光垫来确保表面安装部件的稳定的修复质量。解决方案：表面安装部件修复装置通过从其喷嘴吹入热空气来热熔融表面安装部件与安装在印刷电路板上的裸露焊盘的焊接连接，焊接它被形成为围绕部件的喷嘴体被加热并向下移动到印刷电路板上，以便当其被加热到焊料熔点以上时，暴露焊盘围绕部件被安装，从而使焊料熔化在焊料熔点的末端部分组件的外围。在焊料完全熔化之后，喷嘴向上移动以重新焊接部件的外周的端部，并且用裸露的焊盘临时固定部件。随后，用来自喷嘴的热空气吹扫组件以焊接外露垫。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2008250586A Attached url transmitting/receiving method, system and program 有权
标题翻译：附件URL发送/接收方法，系统和程序
公开(公告)号：JP2008250586A
公开(公告)日：2008-10-16
申请号：JP2007090051
申请日：2007-03-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHIDA MAKOTO
IPC分类号： G06F13/00 , H04L12/58
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of providing a content management system for specifying information referred to by a recipient in receipt of a URL and verifying the information known to a user.
SOLUTION: An attached URL transmitting/receiving method in an attached URL transmitting/receiving system for managing the presence of recipient access to a content indicated by a URL written in an email comprises: a step wherein a processor of a mail client transmits the URL written in the email to a content management server; a step wherein a processor of the content management server receives from a Web server the content indicated by the transmitted URL; a step wherein the processor of the content management server stores the received content in a storage device; a step wherein the processor of the content management server stores in a history table the information indicative of a path to a storage location of the received content and the date and time of receipt; and a step wherein the processor of the content management server transmits the received content to the mail client.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够提供内容管理系统的技术，该内容管理系统用于在接收到URL并验证用户已知的信息时指定接收者所引用的信息。解决方案：附加的URL发送/接收系统中的附加的URL发送/接收方法，用于管理对由写入电子邮件的URL指示的内容的接收者访问的存在，包括：邮件客户端的处理器发送将该电子邮件中写入的URL写入内容管理服务器; 所述内容管理服务器的处理器从所述Web服务器接收由所发送的URL指示的内容的步骤; 其中所述内容管理服务器的处理器将所接收的内容存储在存储设备中; 其中所述内容管理服务器的处理器在历史表中存储指示到所接收的内容的存储位置的路径的信息以及接收的日期和时间; 以及其中内容管理服务器的处理器将所接收的内容发送到邮件客户端的步骤。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007192187A Internal combustion engine and its piston 有权
标题翻译：内燃机及其活塞
公开(公告)号：JP2007192187A
公开(公告)日：2007-08-02
申请号：JP2006013272
申请日：2006-01-23
申请人： Hitachi Ltd , Nissan Motor Co Ltd , 日産自動車株式会社 , 株式会社日立製作所
发明人： OKAMOTO SHINICHI , HORIGOME TAIZO , TOMITA MASAYUKI , KIKUCHI TSUTOMU , SAKAI TARO , YOSHIDA MAKOTO , INOUE MASAHIKO , KIHARA YUSUKE , IDE TAKASHI
IPC分类号： F02B23/10 , F02F3/26 , F02F3/28
CPC分类号： Y02T10/125
摘要： PROBLEM TO BE SOLVED: To improve stability in combustion by forming air-fuel mixture in the vicinity of an ignition plug stably and suppress reduction of tumble stream to the minimum extent.
SOLUTION: A bottom face 22a of a substantially rectangular recessed part 22 on a crown face of a piston 4 forms a curved face being substantially parallel with a central axial line of a piston pin along tumble stream. A protruding bar part 25 being parallel with the central axial line of the piston pin is formed in a substantially central part of the bottom face 22a just below the ignition plug 7, and rising parts 25a, 25b on its intake valve side and exhaust valve side form circular arc faces. Radius of curvature of the rising part 25b on the exhaust valve side is larger than that on the intake valve side. An ascending current going upward occurs when a spray passes above the protruding bar part 25 at stratified lean combustion time, and a part of the spray is guided onto an upper ignition plug side, thereby achieving stable combustion. Since the rising part 25b on the exhaust valve side forms the circular arc face having large radius of curvature, flow of tumble stream at homogeneous combustion time is not obstructed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过在火花塞附近稳定地形成空气燃料混合物，并且将滚筒流减少到最小程度来提高燃烧中的稳定性。解决方案：活塞4的顶面上的基本为矩形的凹部22的底面22a与沿着滚筒流的活塞销的中心轴线大致平行地形成弯曲面。与位于火花塞7正下方的底面22a的大致中央部形成有与活塞销的中心轴线平行的突出部25，其进气门侧和排气阀侧的升降部25a，25b 形成圆弧面。排气门侧的上升部25b的曲率半径大于进气门侧的曲率半径。当喷雾通过分层稀燃燃烧时间在突出杆部分25上方通过时，上升电流向上发生，并且一部分喷雾被引导到上部火花塞侧，从而实现稳定的燃烧。由于排气阀侧的上升部25b形成曲率半径大的圆弧面，因此不会妨碍在均匀燃烧时的流动。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007129251A Method of manufacturing semiconductor integrated circuit device 有权
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：JP2007129251A
公开(公告)日：2007-05-24
申请号：JP2006347647
申请日：2006-12-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TANABE YOSHIKAZU , ASANO ISAMU , YOSHIDA MAKOTO , YAMAMOTO NAOKI , SAITO MASAYOSHI , KASHU NOBUYOSHI
IPC分类号： H01L29/78 , H01L21/28 , H01L21/8242 , H01L27/108 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To prevent a metal film from being oxidized in a light oxidation process after gate patterning, and to control reproducibility in forming an oxide film at a gate side wall end and uniformity in thickness of the oxide film, relating to a gate working process which uses polymetal (high melting-point metal film/barrier layer/polycrystal silicon film).
SOLUTION: The method includes a step of forming a gate electrode of a polymetal structure on a semiconductor wafer 1A where a gate oxide film is formed, and a step of thermally oxidizing, in selective manner, a polycrystal silicon film in such gas atmosphere as contains hydrogen and steam generated from hydrogen and oxygen by catalytic action but substantially contains no hydrogen radical, with the partial pressure of the steam being lower than that of the hydrogen. In the thermal oxidation step, oxygen and hydrogen are introduced into an oxidizing furnace 100 and a gas generating device 140 of catalytic method which is connected to an oxidizing furnace 100, so that the hydrogen and steam are introduced into the oxidizing furnace 100 from the gas generating device 140. Introducing of oxygen is started after starting introduction of hydrogen into the gas generating device 140.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止金属膜在栅极图案化之后的光氧化工艺中被氧化，并且控制在栅极侧壁端部形成氧化膜的再现性和氧化物膜的厚度均匀性，涉及使用多金属（高熔点金属膜/阻挡层/多晶硅膜）的浇口加工工序。解决方案：该方法包括在形成栅极氧化膜的半导体晶片1A上形成多金属结构的栅电极的步骤，以及选择性地将这种气体中的多晶硅膜热氧化的步骤通过催化作用含有由氢和氧产生的氢气和蒸汽的气氛，但是基本上不含氢自由基，蒸汽的分压低于氢的分压。在热氧化步骤中，将氧和氢引入氧化炉100和连接到氧化炉100的催化方法的气体发生装置140，使得氢气和蒸汽从气体引入氧化炉100 在将氢气引入气体发生装置140之后，开始引入氧气。版权所有：（C）2007，JPO＆INPIT

9. 发明专利

JP2007072024A Projection-type video display device 有权
标题翻译：投影型视频显示设备
公开(公告)号：JP2007072024A
公开(公告)日：2007-03-22
申请号：JP2005257241
申请日：2005-09-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIMIZU TAKUYA , TSUNODA TAKASHI , YOSHIDA MAKOTO , KIMURA NOBUYUKI
IPC分类号： G03B21/00 , G02F1/13
摘要： PROBLEM TO BE SOLVED: To provide a projection-type video display device having a light shielding unit that realizes reduction in the number of parts and having a simple structure.
SOLUTION: A pair of light shielding plates intercepting light from the vertical directions or the right-and-left directions is set as the light-shielding unit, and arranged so that incident light on a liquid crystal display element can be intercepted by one shielding plate of the light-shielding unit and emitted light from the liquid crystal display element can be intercepted by the other shielding plate thereof, and is arranged so that the positions and the centers of rotation of the incident side light-shielding plate and the emitting side light-shielding plate can be predetermined ones. The light-shielding unit is constituted to undergo rotational motion for the light-shielding plate.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种投影型视频显示装置，其具有实现部件数量减少并具有简单结构的遮光单元。解决方案：将从垂直方向或左右方向截取光的一对遮光板设置为遮光单元，并且布置成使得液晶显示元件上的入射光可以被截止遮光单元的一个屏蔽板和来自液晶显示元件的发射光可以被另一个屏蔽板遮断，并且被布置成使得入射侧遮光板的位置和旋转中心发光侧遮光板可以是预定的。遮光单元构成为对遮光板进行旋转运动。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006245625A Semiconductor integrated circuit device and manufacturing method therefor 审中-公开
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：JP2006245625A
公开(公告)日：2006-09-14
申请号：JP2006169081
申请日：2006-06-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： YOSHIDA MAKOTO , KUMAUCHI TAKAHIRO , TADAKI YOSHITAKA , ASANO ISAMU , HASEGAWA NORIO , KAWAKITA KEIZO
IPC分类号： H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that reduces the pitch of gate electrodes (word lines) and the pitch of bit lines, the memory cell size of DRAM for higher integration and reduces the area of a DRAM formation semiconductor chip, and to provide its manufacturing method.
SOLUTION: An active area L, which contains memory cell selecting MISFETs constituting DRAM memory cells, consists of island-shaped patterns that extend straight in the X direction on the principal surface of a semiconductor substrate. A gate electrode 7 (word line WL) for memory cell selection MISFET extends in the Y direction, on the principal surface of the semiconductor substrate with the same width and a distance between the adjacent gates electrodes (7) (word line WL) is shorter than the width. In addition, a bit line BL formed at the top of the memory cell selecting MISFET extends in the X direction on the principal surface of the semiconductor substrate with the same width and the distance between the adjacent bit lines BL is larger than the width.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供降低栅极（字线）的间距和位线的间距的半导体集成电路器件，用于更高集成度的DRAM的存储单元尺寸，并且减小DRAM形成的面积半导体芯片，并提供其制造方法。解决方案：包含构成DRAM存储单元的存储单元选择MISFET的有源区L由在半导体衬底的主表面上的X方向上直线延伸的岛状图案组成。用于存储单元选择MISFET的栅电极7（字线WL）在宽度相同的半导体衬底的主表面上沿Y方向延伸，并且相邻的栅电极（7）（字线WL）之间的距离较短比宽度。此外，形成在存储单元选择MISFET的顶部的位线BL在半导体衬底的主表面上的X方向上以相同的宽度延伸，并且相邻位线BL之间的距离大于宽度。版权所有（C）2006，JPO＆NCIPI

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