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1. 发明专利

JPS59120394A AUTOMATIC CONTROLLING METHOD OF PREHEATING AND POST- HEATING TEMPERATURE FOR WELDING 失效
公开(公告)号：JPS59120394A
公开(公告)日：1984-07-11
申请号：JP22687382
申请日：1982-12-27
申请人： HITACHI LTD
发明人： SAITOU TOMOYUKI , AKANE HIROSHI , TOYOUCHI MAKOTO , YASUYOSHI KEIICHI , HARA KUNIYOSHI
IPC分类号： B23K9/235 , B23K37/00
摘要： PURPOSE:To maintain adequately the temp. for preheating and post-heating and to obtain a defectless weld zone by detecting electrically the quantity of the IR rays emitted by heating a body to be heated and adjusting the output of a heater according to the generated current thereof. CONSTITUTION:A body 1 to be welded is heated by the radiation heat of an electric heater 2 installed near the weld zone requiring preheating and post- heating. The heated body 1 emits IR rays according to the heating temp. and the rays are converted to a current value by a CdS cell 3 set on the rear of the body 1 whereby the temp. is detected. The detected current value is amplified by an amplifier 5 and is fed to a recorder 6, by which the measured temp. is continuously recorded. On the other hand, the detected value is fed to a variable resistance controller 7, which controls the input current to the heater 2 fed from a power source 8 for heating so as to make the same coincident with the initial set temp.

2. 发明专利

JPH08340006A MANUFACTURE OF SEMICONDUCTOR ELEMENT, AND MIRROR SURFACE WAFER TO BE USED IN SAID MANUFACTURE 失效
公开(公告)号：JPH08340006A
公开(公告)日：1996-12-24
申请号：JP14716295
申请日：1995-06-14
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： SUZUKI KAZUYA , YASUYOSHI KEIICHI
IPC分类号： H01L21/322 , H01L21/304
摘要： PURPOSE: To increase the withstand voltage of an oxide film to be formed on a surface, and stabilize device characteristics, by forming a mirror surface wafer wherein oxygen donor eliminating process is not performed in the case of mirror surface wafer formation, and defect neuclei are not present, and performing heat treatment at a temperature for outdiffusion of internal oxygen. CONSTITUTION: A silicon mirror surface wafer 3 consists of an N-type silicon substrate 1, and has an orientation flat 4 turning to a line face in a part. Since oxygen donor eliminating process is not performed, defect neuclei due to oxygen are not present. On the back opposite to the mirror surface 2 of the silicon mirror surface wafer 3, a coating film 5 for gettering which is formed of a poly silicon film of about 10-100μm in thickness is arranged. As the result of forming the coating film 5 for gettering, a damage layer 6 is formed on the surface layer of the back of the silicon mirror surface wafer 3. The damage layer 6 captures heavy metal or the like which has permeated the silicon mirror surface wafer 3, at the time of heating state.

3. 发明专利

JPS60201818A CONTROL FOR CUT LENGTH IN ROTARY CUTTER 失效
公开(公告)号：JPS60201818A
公开(公告)日：1985-10-12
申请号：JP5422584
申请日：1984-03-23
申请人： HITACHI LTD
发明人： SAITOU TOMOYUKI , YASUYOSHI KEIICHI , KOBAYASHI AKIHIRO , INOUE KENJI
IPC分类号： B23D36/00 , B26D5/28
摘要： PURPOSE:To obtain the optimum number of revolution by measuring the length of a cut work by automatically measuring the incident-rays cutting-off time in the case when a work passes through a detection hole, by two photodiodes arranged in the vicinity of a cutter and controlling a motor for the cutter. CONSTITUTION:When a work 3 is cut by a fixed cutter 1 and a rotary cutter 2 revolved by a motor 10 and starts to slide on a slide 5, said work 3 closes the detection hole of a photodiode 8 and cuts-off incident rays. When the work 3 lowers further, the detection hole of the second photodiode 9 is closed, and the detection electric current becomes zero, and the passed time (t1) is measured, and the passing speed of the work is measured. When the work 4 drops further and completes the passing through the photodiode 8 and the detection hole, light is introduced again, and the photodiode 8 transmits a signal current, and the passed time (t2) is measured, and the length of the work 4 is measured, and said length is compared with a prescribed length in a comparison circuit, and the differential signal for the cut length is sent into a control circuit for the motor 10.

4. 发明专利

JPS6063451A SURFACE DEFECT DETECTOR USING LASER 失效
公开(公告)号：JPS6063451A
公开(公告)日：1985-04-11
申请号：JP15528084
申请日：1984-07-27
申请人： HITACHI LTD
发明人： SAITOU TOMOYUKI , MITSUI KAZUHIKO , OOSHITA YUKIHISA , YASUYOSHI KEIICHI , GOTOU KUNICHIKA
IPC分类号： G01N21/88
摘要： PURPOSE:To measure surface defects continuously with a high precision without contacting by detecting a phase shift between detected currents of two light receiving terminals which is generated by a defect on the surface of an object to be measured. CONSTITUTION:Laser light 4a from a laser transmitter 3 is irradiated to the surface of an object 1 to be measured, and reflected laser light 4b is received by two light receiving terminals 6 and 7. If a defect 8 exists on the surface of the object 1 to be measured, a phase shift is generated between detected currents of light receiving terminals 6 and 7. The difference between detected currents is linear in the position of the defect 8, and the size and the range of the defect 8 are detected in accordance with the current differential value and the time of the phase shift.

5. 发明专利

JPS60206826A PRODUCTION OF POLYESTER 失效
公开(公告)号：JPS60206826A
公开(公告)日：1985-10-18
申请号：JP6061284
申请日：1984-03-30
申请人： HITACHI LTD
发明人： YASUYOSHI KEIICHI , SAITOU TOMOYUKI , KOBAYASHI AKIHIRO , INOUE KENJI
IPC分类号： C08G63/00 , C08G63/78
摘要： PURPOSE:To reduce the manufacturing cost of a polyester by inhibiting discharge of an inert gas used for the desorption of an adsorbent into air, by feeding the inert gas to a scrubber, removing the reaction gas by absorption in water and recirculating the inert gas to the desorption tower. CONSTITUTION:Polyester particulate chips in a reaction tank 1 are subjected to a solid-phase polycondensation reaction. The produced reaction gas and an inert gas fed from the bottom of the tank 1 are fed as an exhaust gas 6 to an adsorption tower 13. The reaction gas in the gas 6 is removed by adsorption on an adsorbent, and the regenerated inert gas 5 is recirculated to the reaction tank 1. On the other hand, a high-temperature inert gas is passed from a change-over valve 18 through the adsorption tower 12 containing the adsorbent on which the reaction gas is adsorbed and the reaction gas is desorbed and removed from the adsorbent and then is led to a scrubber 14, wherein it is removed by absorption in water sprayed through a water entrance 26. The obtained purified inert gas is heated to a high temperature by passing through a blower 15, a heat exchanger 16 and a heater 17, and recirculated to the adsorption tower 12. After completion of the desorption, the adsorption tower 12 is switch over to a tower 12, which is then used for desorption.

6. 发明专利

JPS57166504A METHOD FOR MEASURING AXIAL CORE OSCILLATION OF ROTATING SHAFT 失效
公开(公告)号：JPS57166504A
公开(公告)日：1982-10-14
申请号：JP5179881
申请日：1981-04-08
申请人： HITACHI LTD
发明人： SAITOU TOMOYUKI , NISHIDA KATSUYASU , OOSHITA YUKIHISA , MITSUI KAZUHIKO , YASUYOSHI KEIICHI
IPC分类号： G01B11/26 , G01D5/26
摘要： PURPOSE:To measure the axial core oscillation of a high-speed rotating shaft without contacting by detecting the fine displacement of the reflected beam of laser beam, illuminating the rotating shaft, from a difference in the quantity of photodetected beam between two photodetectors. CONSTITUTION:A laser beam 4 from beam sources 2 and 3 is reflected by a rotating shaft 1 and its reflected beam 5 is photodetected by a photodetector 6. The photodetector 6 has two photodetecting elements 9a and 9b and are so arranged that when the rotating shaft is still, the spot of the reflected beam 5 is positioned between both the elements. Therefore, the quantities of beam photodetected by both the elements are equal. When the rotating shaft oscillates owing to its axial center oscillation in accordance with the rotation of the rotating shaft, the point of reflection is shifted and there is a difference in the quantity of photodetected beam between both the elements 9a and 9b. Signals that correspond to those quantities of photodetected beam and amplified by an amplfier 7 and a deviation measuring instrument measures a difference between both the signals to measure the degree of the axial core oscillation.

7. 发明专利

JPS55117530A STRAIGHTENING METHOD FOR PIPE END 失效
公开(公告)号：JPS55117530A
公开(公告)日：1980-09-09
申请号：JP2346279
申请日：1979-03-02
申请人： HITACHI LTD
发明人： MARUYAMA EIJI , TAKADA TADASHI , YASUYOSHI KEIICHI
IPC分类号： B21D41/02 , B21D39/20
摘要： PURPOSE:To straighten and uniformize the shape and size of the pipe material into the true roundness, and to manufacture the high reliable circular-seam welded joint, by expanding the pipe end inserted into the holder, formed into the specified standard size, in accordance with the uniform pipe expanding method. CONSTITUTION:Inside diameter D3 of the holder 6 is set to the largest pipe size specified in the standard; the pipe 1 of outside diameter D1 is set in the holder 6. Next, the uniform pipe expander head 5 is inserted into this pipe 1, and the elastic pipe expanding medium 8 is axially compressed; thereby, the pipe 1 is expanded so far as the inside diameter D2 of the holder 6. Then, after the head 5 just finished the pipe expansion work is pulled away from the pipe 1, the clumping device 7 is released, the holder 6 is dismounted, and the pipe 1 is taken out. As a result, only the end of pipe 1 can be expanded to the inside diameter D2 of the holder 6, that is the largest size of the specified standard. Similarly, the pipe end of opponent pipe 2 of outside diameter D2 is expanded, and both pipes 1, 2, are straightened to the true roundness of identical outside diameter D3.

8. 发明专利

JPH07126094A SILICON SINGLE CRYSTAL PRODUCING DEVICE 失效
公开(公告)号：JPH07126094A
公开(公告)日：1995-05-16
申请号：JP26676893
申请日：1993-10-26
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： SUZUKI KAZUHISA , MATSUO HIROOMI , FUJITA MASATO , YASUYOSHI KEIICHI
IPC分类号： C30B15/00 , C30B27/02 , C30B29/06 , H01L21/208
摘要： PURPOSE:To provide the device capable of securing the pressure strength of gate oxidized film while maintaining a high-speed pull rate in producing single crystal silicon. CONSTITUTION:The silicon single crystal production device based on Czochralski process is so designed that a seed crystal 14 is dipped in the silicon melt 4 in a quartz crucible 5 and then pulled to grow a silicon single crystal 1. A hydrogen gas 10 is used as carrier gas. With this device, since the silicon single crystal 1 is produced in a hydrogen gas atmosphere; therefore, at the same time, an annealing operation can be made to secure the pressure strength of a gate oxidized film. Therefore, the pressure strength of the gate oxidized film of a device formed can be secured without requiring addition of new process(es) after pull; Also, the pull rate for the single crystal is not decreased, thus not impairing silicon single crystal production efficiency.

9. 发明专利

JPS6060497A AIRTIGHT SECURING PROCESS OF DUAL TUBE PLATE TYPE HEAT EXCHANGER 失效
公开(公告)号：JPS6060497A
公开(公告)日：1985-04-08
申请号：JP16665083
申请日：1983-09-12
申请人： HITACHI LTD
发明人： SAITOU TOMOYUKI , MITSUI KAZUHIKO , FUKUDA SUMIO , YASUYOSHI KEIICHI , HARA KUNIYOSHI
IPC分类号： B29C65/00 , B29C65/16 , F28F9/18
摘要： PURPOSE:To make a fusion of tube into inside tube plate feasible securing perfect airtight by a method wherein a small welding torch reflecting laser beams only is inserted into inside of a tube. CONSTITUTION:After setting up a tube 3 and a small tube 4, a welding torch for laser welding is inserted into the tube 3. The welding torch with a reflector 5 at the end bends incident laser beams 11 projected in parallel with the axis inside the tube 3 at right angle to a weld 13 to irradiate the same. Besides, the welding torch comprising an optical fiber tube 6, a supporting roller 9 and a turning gear 7 may be driven centering on the axial core by a motor 8. The incident beams 11 projected from a laser oscillator 10 reach the reflector 5 through the intermediay of the optical fiber tube 6 to fuse the tube 3 into an inside tube plate 3 by laser welding process making use of the revolution of the welding torch.

10. 发明专利

JPS54106909A MANUFACTURING OF PRESSURE CONTAINER REQUESTING SOLID SOLUTION PROCESS 失效
公开(公告)号：JPS54106909A
公开(公告)日：1979-08-22
申请号：JP1242578
申请日：1978-02-08
申请人： HITACHI LTD
发明人： MAKINO HIROYUKI , YASUYOSHI KEIICHI
IPC分类号： F16J12/00
摘要： PURPOSE:To facilitate solid solution process by such a construction that a pressure container made of anti-corrosive material is formed in a uniform plate thickness. CONSTITUTION:A container is formed of a semi-spherical mirror plate 1 and a shell plate 2 having the same thickness as the mirror plate, and around this shell plate 2 a spacer plate 3 of the same material as the shell plate is welded with the determined spacing. Then, they shall undergo a solid solution process and a steel band 4 is wound around the shell plate 2 and fixed to procure the necessary thickness of the shell plate 2. According to this constitution, the solid solution process needed can be conducted readily and effectively. And here, the thickness requested is obtained by winding and fixing a steel band of mild steel around the shell plate after the solid solution process, so that consumption of dear anti-corrosive material can be reduced by half.

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