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1. 发明专利

JPH08340006A MANUFACTURE OF SEMICONDUCTOR ELEMENT, AND MIRROR SURFACE WAFER TO BE USED IN SAID MANUFACTURE 失效
公开(公告)号：JPH08340006A
公开(公告)日：1996-12-24
申请号：JP14716295
申请日：1995-06-14
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： SUZUKI KAZUYA , YASUYOSHI KEIICHI
IPC分类号： H01L21/322 , H01L21/304
摘要： PURPOSE: To increase the withstand voltage of an oxide film to be formed on a surface, and stabilize device characteristics, by forming a mirror surface wafer wherein oxygen donor eliminating process is not performed in the case of mirror surface wafer formation, and defect neuclei are not present, and performing heat treatment at a temperature for outdiffusion of internal oxygen. CONSTITUTION: A silicon mirror surface wafer 3 consists of an N-type silicon substrate 1, and has an orientation flat 4 turning to a line face in a part. Since oxygen donor eliminating process is not performed, defect neuclei due to oxygen are not present. On the back opposite to the mirror surface 2 of the silicon mirror surface wafer 3, a coating film 5 for gettering which is formed of a poly silicon film of about 10-100μm in thickness is arranged. As the result of forming the coating film 5 for gettering, a damage layer 6 is formed on the surface layer of the back of the silicon mirror surface wafer 3. The damage layer 6 captures heavy metal or the like which has permeated the silicon mirror surface wafer 3, at the time of heating state.

2. 发明专利

FR2543981A1 未知
公开(公告)号：FR2543981A1
公开(公告)日：1984-10-12
申请号：FR8408514
申请日：1984-05-30
申请人： HITACHI LTD
发明人： SHIMIZU HIROFUMI , FUJITA MASATO , SUZUKI KAZUYA , HANAGATA FUMIAKI
IPC分类号： C30B15/14 , C30B29/06 , C30B33/00 , C30B33/02
摘要： A silicon single crystal ingot (5) not separated from its seed (5a) is suspended in an upright position within the bell jar (1) of an upright type annealing furnace by clamping the seed (5a) in a chuck (7) on the bell jar (1). The ingot (5) is annealed by radient heat which is emitted from infrared lamps (6) disposed around the outer circumference of the bell jar (1). The ingot (5) is held such that no part of the portion of its body which will provide a wafer is in contact with the apparatus. The annealing temperature is 1,200 DEG C or higher. After this annealing treatment, the ingot is cooled to 1,100 DEG C at a rate of 10 to 15 DEG C/min. and further to 300 DEG C at a rate of 25 to 100 DEG C/min. and is held at 300 DEG C for a predetermined time period. By the cooling treatment from 1,100 DEG C to 300 DEG C, it is made possible to suppress generation of microdefects and oxygen donors.

3. 发明专利

DE3413082A1 未知
公开(公告)号：DE3413082A1
公开(公告)日：1984-10-11
申请号：DE3413082
申请日：1984-04-06
申请人： HITACHI LTD
发明人： SHIMIZU HIROFUMI , FUJITA MASATO , SUZUKI KAZUYA , HANAGATA FUMIAKI
IPC分类号： C30B15/14 , C30B29/06 , C30B33/00 , C30B33/02 , C30B35/00 , H01L21/324
摘要： A silicon single crystal ingot (5) not separated from its seed (5a) is suspended in an upright position within the bell jar (1) of an upright type annealing furnace by clamping the seed (5a) in a chuck (7) on the bell jar (1). The ingot (5) is annealed by radient heat which is emitted from infrared lamps (6) disposed around the outer circumference of the bell jar (1). The ingot (5) is held such that no part of the portion of its body which will provide a wafer is in contact with the apparatus. The annealing temperature is 1,200 DEG C or higher. After this annealing treatment, the ingot is cooled to 1,100 DEG C at a rate of 10 to 15 DEG C/min. and further to 300 DEG C at a rate of 25 to 100 DEG C/min. and is held at 300 DEG C for a predetermined time period. By the cooling treatment from 1,100 DEG C to 300 DEG C, it is made possible to suppress generation of microdefects and oxygen donors.

4. 发明专利

GB2137524A A process for fabricating a semiconductor material and an apparatus therefor 未知
公开(公告)号：GB2137524A
公开(公告)日：1984-10-10
申请号：GB8404092
申请日：1984-02-16
申请人： HITACHI LTD
发明人： SHIMIZU HIROFUMI , FUJITA MASATO , SUZUKI KAZUYA , HANAGATA FUMIAKI
IPC分类号： C30B15/14 , C30B29/06 , C30B33/00 , C30B33/02
摘要： A silicon single crystal ingot (5) not separated from its seed (5a) is suspended in an upright position within the bell jar (1) of an upright type annealing furnace by clamping the seed (5a) in a chuck (7) on the bell jar (1). The ingot (5) is annealed by radient heat which is emitted from infrared lamps (6) disposed around the outer circumference of the bell jar (1). The ingot (5) is held such that no part of the portion of its body which will provide a wafer is in contact with the apparatus. The annealing temperature is 1,200 DEG C or higher. After this annealing treatment, the ingot is cooled to 1,100 DEG C at a rate of 10 to 15 DEG C/min. and further to 300 DEG C at a rate of 25 to 100 DEG C/min. and is held at 300 DEG C for a predetermined time period. By the cooling treatment from 1,100 DEG C to 300 DEG C, it is made possible to suppress generation of microdefects and oxygen donors.

5. 发明专利

FR2543980A1 未知
公开(公告)号：FR2543980A1
公开(公告)日：1984-10-12
申请号：FR8401838
申请日：1984-02-07
申请人： HITACHI LTD
发明人： SHIMIZU HIROFUMI , FUJITA MASATO , SUZUKI KAZUYA , HANAGATA FUMIAKI
IPC分类号： C30B15/14 , C30B29/06 , C30B33/00 , C30B33/02 , F27B5/04 , F27B5/14 , F27D11/02
摘要： A silicon single crystal ingot (5) not separated from its seed (5a) is suspended in an upright position within the bell jar (1) of an upright type annealing furnace by clamping the seed (5a) in a chuck (7) on the bell jar (1). The ingot (5) is annealed by radient heat which is emitted from infrared lamps (6) disposed around the outer circumference of the bell jar (1). The ingot (5) is held such that no part of the portion of its body which will provide a wafer is in contact with the apparatus. The annealing temperature is 1,200 DEG C or higher. After this annealing treatment, the ingot is cooled to 1,100 DEG C at a rate of 10 to 15 DEG C/min. and further to 300 DEG C at a rate of 25 to 100 DEG C/min. and is held at 300 DEG C for a predetermined time period. By the cooling treatment from 1,100 DEG C to 300 DEG C, it is made possible to suppress generation of microdefects and oxygen donors.

6. 发明专利

IT8420408D0 未知
公开(公告)号：IT8420408D0
公开(公告)日：1984-04-05
申请号：IT2040884
申请日：1984-04-05
申请人： HITACHI LTD
发明人： SHIMIZU HIROFUMI , FUJITA MASATO , SUZUKI KAZUYA , HANAGATA FUMIAKI
IPC分类号： C30B15/14 , C30B29/06 , C30B33/00 , C30B33/02 , H01L
摘要： A silicon single crystal ingot (5) not separated from its seed (5a) is suspended in an upright position within the bell jar (1) of an upright type annealing furnace by clamping the seed (5a) in a chuck (7) on the bell jar (1). The ingot (5) is annealed by radient heat which is emitted from infrared lamps (6) disposed around the outer circumference of the bell jar (1). The ingot (5) is held such that no part of the portion of its body which will provide a wafer is in contact with the apparatus. The annealing temperature is 1,200 DEG C or higher. After this annealing treatment, the ingot is cooled to 1,100 DEG C at a rate of 10 to 15 DEG C/min. and further to 300 DEG C at a rate of 25 to 100 DEG C/min. and is held at 300 DEG C for a predetermined time period. By the cooling treatment from 1,100 DEG C to 300 DEG C, it is made possible to suppress generation of microdefects and oxygen donors.

7. 发明专利

JPH07118088A APPARATUS FOR PRODUCTION OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH07118088A
公开(公告)日：1995-05-09
申请号：JP26198193
申请日：1993-10-20
申请人： HITACHI LTD
发明人： MATSUO HIROOMI , SUZUKI KAZUYA
IPC分类号： C30B15/00 , C30B29/06 , H01L21/208
摘要： PURPOSE:To provide an apparatus for producing a silicon single crystal which increases a pulling up speed at the time of producing the silicon single crystal. CONSTITUTION:This apparatus for producing the silicon single crystal is constituted to grow the silicon single crystal by immersing a seed crystal into the silicon melt in a quartz crucible disposed within a chamber 2 and pulling up the seed crystal while rotating the seed crystal and the quartz crucible. At least the upper part of the inside wall surface of the chamber 2 of the apparatus described above is composed of a carbon sheet (carbon) 7. Since the inside wall surface of the chamber is composed of the carbon sheet 7, the generation of radiation heat from the silicon melt, etc., is suppressed and the temp. in the chamber 2 is lowered, by which the cooling effect is improved and the temp. rise on the surface of the silicon single crystal is suppressed. As a result, the pulling up speed at the time of producing the silicon single crystal is increased.

8. 发明专利

JPH0710686A SINGLE CRYSTAL PRODUCTION CRUCIBLE AND SINGLE CRYSTAL DRAWING DEVICE INCORPORATING THE SAME CRUCIBLE 失效
公开(公告)号：JPH0710686A
公开(公告)日：1995-01-13
申请号：JP15661293
申请日：1993-06-28
申请人： HITACHI LTD
发明人： SUZUKI KAZUYA , MATSUO HIROOMI
IPC分类号： C30B15/12
摘要： PURPOSE:To inhibit gas erosion of a graphite crucible in a single crystal production crucible. CONSTITUTION:This crucible 1 is composed of a quartz crucible 11 and a graphite crucible 2 composed of plural blocks for receiving and supporting the quartz crucible 11. This graphite crucible 2 is composed of, e.g. a bottom plate 3 constituting the central part of the bottom and three crucible bodies 4 constituting the circumferential wall. In this graphite crucible 2, an engagement unit 51 made of graphite is detachably engaged with an engagement groove 50 made in the inner circumferential wall of the bottom over the whole circumference. The engagement unit 51 prevents slits 13 between the crucible bodies 4 from being exposed. The quartz crucible 11 can be prevented from biting into a slit 13 for allowing SiO2-containing gas evaporated from the quartz crucible 11 to pass through. Local superheating, therefore, of the graphite crucible 2 can be prevented and occurrence of erosion can be reduced. In addition, in the case of occurrence of erosion, the engagement unit 51 is exchanged.

9. 发明专利

JPH06237502A METHOD AND EQUIPMENT FOR CONTROLING INDUCTION MOTOR 失效
公开(公告)号：JPH06237502A
公开(公告)日：1994-08-23
申请号：JP2093093
申请日：1993-02-09
申请人： HITACHI LTD , HIGASHI NIPPON RYOKAKU TETSUDO
发明人： SEKIZAWA TOSHIHIKO , KOTAKE KAZUYOSHI , SUZUKI KAZUYA , WAJIMA TAKENORI , MAEKAWA YOSHIO , ABIKO HIROSHI
IPC分类号： B60L9/16 , H02P27/06 , H02P5/41
摘要： PURPOSE:To enable improvement of an adhesion performance by preventing a sudden change of an inverter frequency even at the time of an abnormal operation of a vehicle and by utilizing a drooping characteristic which an induc tion motor has. CONSTITUTION:A specified number of revolutions is selected as a rotor frequency from the numbers of revolutions obtained by revolution detectors 51 to 54 and it is stored as history data in a ring buffer 11. Based on the stored history data, rotor frequency difference data 67 are generated and data contained in an upper limit value C1 and a lower limit value C2 are generated as rotor frequency difference data 71. Then, a vehicle acceleration alpha is computed by preestimation from these data in a vehicle acceleration computing part 2, the rotor frequency is calculated from this vehicle acceleration in a rotor frequency calculating part 3, an inverter frequency 80 is generated from this rotor frequency and a command slip frequency 79 and thereby each of induction motors 41 to 44 is controlled. The upper limit value C1 and lower limit value C2 are corrected in accordance with an operation command 74 and the inverter frequency 80.

10. 发明专利

JPH02132486A TRAIN GUIDANCE INFORMATION DEVICE 失效
公开(公告)号：JPH02132486A
公开(公告)日：1990-05-21
申请号：JP28566788
申请日：1988-11-14
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： SUZUKI KAZUYA , SEKINO SHINICHI
IPC分类号： G09D1/00 , G09F27/00
摘要： PURPOSE:To exactly inform an environmental state of the periphery as guidance information to passengers by detecting the environmental condition of the periphery of a train by a detecting means, selecting comformable guidance information from in various guidance information stored in a store means, based on the environmental condition of the periphery of the train detected by a selecting means and displaying the information on a display means. CONSTITUTION:The information device is provided with a detecting means 101 for detecting an environmental condition of the periphery of a train, and guidance information corresponding to the environmental condition detect by this detecting means 101 is stored in a store means 102. In this state, the guidance information stored in the store means 102 corresponding to the environmental condition of the periphery of the train detected by the detecting means 101 is selected by a selecting means 103. The guidance information outputted by a selection of this selecting means 103 is inputted to a guidance information output device 11, the guidance information outputted from the output device 11 is displayed on a guidance information display 12, and the environmental condition of the periphery of the train is informed exactly to passengers by a simple device.

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