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    • 8. 发明专利
    • DE2332507A1
    • 1974-01-24
    • DE2332507
    • 1973-06-26
    • HITACHI LTD
    • NOMIYA KOSEIMINORIKAWA KAZUOTORII SHUICHIHATSUKANO YOSHIKAZUKODAIRA TOKIO
    • G11C19/28H03K3/356H03K3/286
    • A static flip-flop circuit comprising a first inverter including a first insulated gate field-effect transistor (MIS-FET), a second inverter including a second MIS-FET and whose output is feedback-connected to the gate of the first MIS-FET, a third inverter including a third MIS-FET, the gates of the second and third MIS-FET's being interconnected, a transfer gate MIS-FET whose gate is connected to receive a first train of clock pulses, an input MIS-FET whose gate is connected to receive an input signal, a control MIS-FET which is connected in series with the input MIS-FET, the series connection being incorporated in parallel with the first MIS-FET, a further control MIS-FET which is connected in parallel with the second MIS-FET, and a reading MIS-FET which is connected to the output of the third inverter and whose gate is connected to receive a second train of clock pulses differing in phase from the first train of clock pulses, the control MIS-FET's being connected to receive a writing control signal at their gates, the writing control signal being adapted to render the control MIS-FET's conductive when at least the transfer gate MIS-FET is conductive at writing, whereby the same information as stored in the second MIS-FET is stored in the third MIS-FET in order to be read out through the reading MIS-FET.
    • 9. 发明专利
    • DE2332431A1
    • 1974-01-24
    • DE2332431
    • 1973-06-26
    • HITACHI LTD
    • HATSUKANO YOSHIKAZUNOMIYA KOSEITORII SHUICHI
    • G11C19/28H03K3/356H03K3/286
    • A static flip-flop circuit comprising a first inverter including a first insulated gate field-effect transistor (MIS-FET), a second inverter including a second MIS-FET and whose output is feedback-connected to the gate of the first MIS-FET, a third inverter including a third MIS-FET, the gates of the second and third MIS-FET's being interconnected, a transfer gate MIS-FET whose gate is connected to receive a first train of clock pulses, an input MIS-FET whose gate is connected to receive an input signal, a control MIS-FET which is connected in series with the input MIS-FET, the series connection being incorporated in parallel with the first MIS-FET, a further control MIS-FET which is connected in parallel with the second MIS-FET, and a reading MIS-FET which is connected to the output of the third inverter and whose gate is connected to receive a second train of clock pulses differing in phase from the first train of clock pulses, the control MIS-FET's being connected to receive a writing control signal at their gates, the writing control signal being adapted to render the control MIS-FET's conductive when at least the transfer gate MIS-FET is conductive at writing, whereby the same information as stored in the second MIS-FET is stored in the third MIS-FET in order to be read out through the reading MIS-FET.
    • 10. 发明专利
    • DE2332413A1
    • 1974-01-24
    • DE2332413
    • 1973-06-26
    • HITACHI LTD
    • HATSUKANO YOSHIKAZUNOMIYA KOSEITORII SHUICHI
    • G11C19/28H03K3/356H03K3/286
    • A static flip-flop circuit comprising a first inverter including a first insulated gate field-effect transistor (MIS-FET), a second inverter including a second MIS-FET and whose output is feedback-connected to the gate of the first MIS-FET, a third inverter including a third MIS-FET, the gates of the second and third MIS-FET's being interconnected, a transfer gate MIS-FET whose gate is connected to receive a first train of clock pulses, an input MIS-FET whose gate is connected to receive an input signal, a control MIS-FET which is connected in series with the input MIS-FET, the series connection being incorporated in parallel with the first MIS-FET, a further control MIS-FET which is connected in parallel with the second MIS-FET, and a reading MIS-FET which is connected to the output of the third inverter and whose gate is connected to receive a second train of clock pulses differing in phase from the first train of clock pulses, the control MIS-FET's being connected to receive a writing control signal at their gates, the writing control signal being adapted to render the control MIS-FET's conductive when at least the transfer gate MIS-FET is conductive at writing, whereby the same information as stored in the second MIS-FET is stored in the third MIS-FET in order to be read out through the reading MIS-FET.