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1. 发明专利

JPS5299069A PRODUCTION OF LEAD FRAME 失效
公开(公告)号：JPS5299069A
公开(公告)日：1977-08-19
申请号：JP1489976
申请日：1976-02-16
申请人： HITACHI LTD
发明人： TAKAHASHI MOTOHIRO , ITOI KOUJI , KOYAMA YASUHIRO
IPC分类号： H01L23/50 , H01L21/48 , H01L23/48
摘要： PURPOSE:To improve bondability of pellet bonding and wire bonding by means of a flat lead frame.

2. 发明专利

JPS5295176A MANUFACTURE OF SEMICONDUCTOR APPARATUS 失效
公开(公告)号：JPS5295176A
公开(公告)日：1977-08-10
申请号：JP1147976
申请日：1976-02-06
申请人： HITACHI LTD
发明人： TAKAHASHI MOTOHIRO , ITOI KOUJI , INUI AKINORI , FUJITA YUZURU , SUZUKI NOBUO , SAKURAI MINORU
IPC分类号： H01L21/52 , H01L21/58 , H01L23/48
摘要： PURPOSE:To enable the resin sealing cheaper for the perfect sealing by providing the gold plated layer only on the pellet fitting and the wire connecting part so that the pellet fitting and the wire connecting can be done in the inert gases.

4. 发明专利

JPS54101267A LEAD FRAME 失效
公开(公告)号：JPS54101267A
公开(公告)日：1979-08-09
申请号：JP724778
申请日：1978-01-27
申请人： HITACHI LTD
发明人： KUGIMIYA HARUO , TAKAHASHI MOTOHIRO
IPC分类号： H01L23/50 , H01L23/48
摘要： PURPOSE:To increase the yield rate of lead frame material to the utmost, which is used for transistor manufacture. CONSTITUTION:The external frame 3 of lead frame holds the leads 2a and 2b used for a plurality of transistors in unified manner, and the holder 4 holds the lead 2 and the dam 5. Further, in this lead frame, each lead is provided so that the direction of the longer lead 2a constitutes an angle of tan (B/A) with the lengthwise of leads.

5. 发明专利

JPS5269566A LEAD FRAME 失效
公开(公告)号：JPS5269566A
公开(公告)日：1977-06-09
申请号：JP14503275
申请日：1975-12-08
申请人： HITACHI LTD
发明人： TAKAHASHI MOTOHIRO , KAMATA YOSHIYUKI , SAKAI KIYOMI
IPC分类号： H01L23/48
摘要： PURPOSE:To eliminate easy protrusion of each part of lead by external force through continuous formation of all parts of lead, and thus to obtain lead frame featuring pattern which has no hooking to contact section of processing unit for band-like each part.

6. 发明专利

JPS5265669A MOUNTING OF SEMICONDUCTOR PELLET 失效
公开(公告)号：JPS5265669A
公开(公告)日：1977-05-31
申请号：JP14165675
申请日：1975-11-28
申请人： HITACHI LTD
发明人： TAKAHASHI MOTOHIRO , ITOI KOUJI , INUI AKINORI
IPC分类号： H01L21/52 , H01L21/58 , H01L23/48
摘要： PURPOSE:Deterioration by heat characteristics of pellets is prevented by placing pellets on an Au-plated frame provided with an Au layer on the bottom surface and mounting the pellets by gold-silicon eutectic alloy at a specified temperature.

7. 发明专利

JPS62252960A LEAD FRAME 失效
公开(公告)号：JPS62252960A
公开(公告)日：1987-11-04
申请号：JP6392787
申请日：1987-03-20
申请人： HITACHI LTD
发明人： KUGIMIYA HARUO , TAKAHASHI MOTOHIRO
IPC分类号： H01L23/50 , H01L23/495
摘要： PURPOSE:To make the yield rate of the material for lead frames to be the maximum, in the lead frames, in each of which four leads are extended radially from the central part and one lead of them is longer than the others, and which are used for transistors, by arranging each lead at a specified angle. CONSTITUTION:Four leads are radially extended from the central part at an equal angle of 90 deg. for every transistor. The length B of one lead 2b among them is longer than the length A of the other three leads 2a. Such a lead frame is used for the transistor. The lead frames 3 are connected and aligned along the long line of a plurality of transistors. The leads are arranged so that an angle theta, which is formed by the long lead 2b and the longitudinal direction of the frame (shown by arrows 6), becomes tan B/A. In general, a ratio between the lengths A and B of the leads of the transistor in such a type is about 3:5. Therefore, the lead frame having the best yield rate is obtained when theta is made to be tan B/A.

8. 发明专利

JPS5295975A PREVENTION OF LEAK OF IMPURITY IN MANUFACTURING SEMICONDUCTOR UNIT 失效
公开(公告)号：JPS5295975A
公开(公告)日：1977-08-12
申请号：JP1226176
申请日：1976-02-09
申请人： HITACHI LTD
发明人： KITAHARA TOSHIAKI , TAKEI ICHIROU , TAKAHASHI MOTOHIRO
IPC分类号： H01L21/22 , H01L21/31
摘要： PURPOSE:To prevent leak of impurity in single surface collector diffusion by forming at least two layers of SiO2 film and forming the first layer at a temperature which will not cause diffusion of the impurity.

9. 发明专利

JPS5214351A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5214351A
公开(公告)日：1977-02-03
申请号：JP9024475
申请日：1975-07-25
申请人： HITACHI LTD
发明人： TAKEDA HARUO , MISAWA EIJI , TAKAHASHI MOTOHIRO
IPC分类号： H01L21/60 , H01L23/48
摘要： PURPOSE:Preventing the shorts during wire bonding, by placing metal strips with thicknesses equal to the sum of the thicknesses of the pellet and the Au foil.

10. 发明专利

JPS51111064A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS51111064A
公开(公告)日：1976-10-01
申请号：JP3554775
申请日：1975-03-26
申请人： HITACHI LTD
发明人： TAKAHASHI MOTOHIRO , KITAHARA TOSHIAKI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:A semiconductor device which has a stem structure preventing the pellet crack and an improved power-cycle characteristic.

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