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1. 发明专利

DE68904343D1 未知
公开(公告)号：DE68904343D1
公开(公告)日：1993-02-25
申请号：DE68904343
申请日：1989-04-03
申请人： HITACHI LTD
发明人： SAKURAI NAOKI , MORI MUTSUHIRO , TANAKA TOMOYUKI , YASUDA YASUMICHI , NAKANO YASUNORI , YATSUO TSUTOMU
IPC分类号： H01L29/68 , H01L21/76 , H01L29/08 , H01L29/739 , H01L29/78 , H01L29/72

2. 发明专利

DE69331408T2 未知
公开(公告)号：DE69331408T2
公开(公告)日：2002-08-08
申请号：DE69331408
申请日：1993-10-28
申请人： HITACHI LTD
发明人： SAKURAI NAOKI , SUGAWARA YOSHITAKA
IPC分类号： H01L21/762 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/78 , H01L29/861 , H01L21/76 , H01L21/74
摘要： A semiconductor integrated circuit has a multilayered supporter (2, 22, 23) and one or more semiconductor islands (1) being disposed on the supporter (2, 22, 23) and being insulated against it by an insulating film (21). Within the islands (1), circuit elements are formed. The circuit further comprises an auxiliary electrode (33) provided at the supporter (2, 22, 23).

3. 发明专利

CA2102079C A DIELECTRIC ISOLATED HIGH VOLTAGE SEMICONDUCTOR DEVICE 未知
公开(公告)号：CA2102079C
公开(公告)日：1999-01-05
申请号：CA2102079
申请日：1993-10-29
申请人： HITACHI LTD
发明人： SAKURAI NAOKI , SUGAWARA YOSHITAKA
IPC分类号： H01L21/762 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/78 , H01L29/861 , H01L23/482 , H01L27/04
摘要： A new semiconductor integrated circuit uses a dielectric separation substrate for realizing a high withstand voltage and high integration. The arrangement extends a depletion layer of a main junction beyond an insulating layer sandwiched between a support and semiconductor islands by applying a bias voltage to the support and the islands. This main junction is a pn junction to which a reverse bias voltage for securing the withstand voltage of the semiconductor element is applied. The impurity density and the thickness of the region between the bottom of the semiconductor island and the circuit element regions is set so that this region is fully depleted by a lower voltage than that at which avalanche breakdown would occur. For this purpose the distance between the bottom part of the island and the main junction is made less than 1/14V .mu.m when the withstand voltage of the circuit element is V volts.

4. 发明专利

DE69222380T2 未知
公开(公告)号：DE69222380T2
公开(公告)日：1998-04-30
申请号：DE69222380
申请日：1992-07-15
申请人： HITACHI LTD
发明人： OOHATA TOSIFUMI , MORI MUTSUHIRO , SAKURAI NAOKI
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/739
摘要： A lateral insulated-gate bipolar transistor has a drift region (12) having therein a base layer (13) and a collector layer (14). An emitter layer (15) is formed in the base layer. A gate electrode structure (4, 5), comprising a control electrode (4) and gate insulating layer (5), contacts the base layer (13), and also contacts the drift layer (12) and the emitter layer (15). An emitter electrode (2) contacts the emitter layer (15), and also the base layer (13), and a collector electrode (3) contacts the collector layer (14). The emitter and collector electrodes (2, 3) are elongate and the ratio of their resistances per unit length are in the ratio 0.5 to 2.0. This reduces the possibility of a localized high current density along the electrodes (2, 3), so reducing the risk of latch-up due to parasitic thyristors. The collector and emitter electrodes (2, 3) may be of the same width and thickness, or of different widths and thicknesses, or may each have an auxiliary part, so that their resistances per unit length are in the desired range. A plurality of such transistors may be fabricated together in an array.

5. 发明专利

DE69222380D1 未知
公开(公告)号：DE69222380D1
公开(公告)日：1997-10-30
申请号：DE69222380
申请日：1992-07-15
申请人： HITACHI LTD
发明人： OOHATA TOSIFUMI , MORI MUTSUHIRO , SAKURAI NAOKI
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/739
摘要： A lateral insulated-gate bipolar transistor has a drift region (12) having therein a base layer (13) and a collector layer (14). An emitter layer (15) is formed in the base layer. A gate electrode structure (4, 5), comprising a control electrode (4) and gate insulating layer (5), contacts the base layer (13), and also contacts the drift layer (12) and the emitter layer (15). An emitter electrode (2) contacts the emitter layer (15), and also the base layer (13), and a collector electrode (3) contacts the collector layer (14). The emitter and collector electrodes (2, 3) are elongate and the ratio of their resistances per unit length are in the ratio 0.5 to 2.0. This reduces the possibility of a localized high current density along the electrodes (2, 3), so reducing the risk of latch-up due to parasitic thyristors. The collector and emitter electrodes (2, 3) may be of the same width and thickness, or of different widths and thicknesses, or may each have an auxiliary part, so that their resistances per unit length are in the desired range. A plurality of such transistors may be fabricated together in an array.

6. 发明专利

DE68926776T2 未知
公开(公告)号：DE68926776T2
公开(公告)日：1996-11-28
申请号：DE68926776
申请日：1989-11-30
申请人： HITACHI LTD
发明人： SAKURAI NAOKI , MORI MUTSUHIRO , TANAKA TOMOYUKI
IPC分类号： H01L29/68 , H01L29/739 , H01L29/74 , H01L29/749 , H01L29/78
摘要： A lateral insulated gate bipolar transistor comprises a p layer (50) and a p layer (70) provided apart from each other and extending from a surface of an n layer (20) into the n layer, an n layer (60) provided extending from a surface of the p layer (50) into the p layer, a first main electrode (2) provided in ohmic contact with the n layer (60) and the p layer (50), a second main electrode (3) provided in ohmic contact with the p layer (70), and a control electrode (1) provided through an insulating film (10) on the n layer (60), the p layer (50) and the n layer (20) on the side of the first main electrode (2) away from the second main electrode (3).

7. 发明专利

DE102007002688A1 未知
公开(公告)号：DE102007002688A1
公开(公告)日：2007-10-04
申请号：DE102007002688
申请日：2007-01-18
申请人： HITACHI LTD
发明人： SAKURAI NAOKI
IPC分类号： H02M1/08 , H01L29/739 , H02M1/00
摘要： To provide a motor drive adapted to operate stably and suffer essentially no damage, even when a high voltage is applied between grounding terminals of upper and lower arms. The motor drive of this invention includes: an arm with a first electric power semiconductor-switching element and a second electric power semiconductor-switching element, both connected in series between major terminals; and a level-shifting circuit that transmits a control signal of the first semiconductor-switching element connected to the high-voltage side of the arm, from a low-voltage circuit to a high-voltage circuit; the motor drive employing an insulated-gate bipolar transistor as the signal-transmitting high-withstand-voltage element formed in the level-shifting circuit.

8. 发明专利

DE102006004420A1 未知
公开(公告)号：DE102006004420A1
公开(公告)日：2006-10-12
申请号：DE102006004420
申请日：2006-01-31
申请人： HITACHI LTD
发明人： SAKURAI NAOKI , MORI MUTSUHIRO
IPC分类号： H02M1/00 , H01L21/822 , H01L21/8234 , H01L23/38 , H01L27/04 , H01L27/06 , H01L29/739 , H01L29/78 , H02M1/08 , H02M1/38 , H02M7/537
摘要： An object of the present invention is to provide an electric power converter including means for accurately detecting a principal current of IGBT. An electric power conversion device according to the present invention includes principal current estimation means for estimating a principal current by using: an output of temperature measuring means whose diode is disposed in the same semiconductor substrate as an IGBT including an emitter having flowing therethrough the principal current and a sense emitter having flowing therethrough a sense current proportional to the principal current; the sense current; and the information, preliminarily stored in memory means, on the relationship among the semiconductor substrate temperature, the principal current and the sense currant.

9. 发明专利

DE69507177D1 未知
公开(公告)号：DE69507177D1
公开(公告)日：1999-02-25
申请号：DE69507177
申请日：1995-02-15
申请人： HITACHI LTD
发明人： HANAOKA KOUMEI , SAKURAI NAOKI , MORI MUTSUHIRO
IPC分类号： H01L25/07 , H01L29/739 , H01L29/861 , H02J7/00
摘要： The present invention provides a semiconductor device comprising, at least a pair of an insulated gate bipolar transistor, and a diode, both of which are in a reverse parallel connection with each other, wherein the resistivity of the base layer (13) of the lowest impurity concentration in the diode is lower than that of the base layer (13) of the lowest impurity concentration in the insulated gate bipolar transistor, and wherein a breakdown voltage of said insulated gate bipolar transistor at the time of switching from conduction state to blocking state is lower than a breakdown voltage of said insulated gate bipolar transistor and said diode at the time of blocking state.

10. 发明专利

CA2102079A1 Semiconductor Integrated Circuit Apparatus 未知
公开(公告)号：CA2102079A1
公开(公告)日：1994-05-07
申请号：CA2102079
申请日：1993-10-29
申请人： HITACHI LTD
发明人： SAKURAI NAOKI , SUGAWARA YOSHITAKA
IPC分类号： H01L21/762 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/78 , H01L29/861 , H01L23/482 , H01L27/04
摘要： A semiconductor integrated circuit has a multilayered supporter (2, 22, 23) and one or more semiconductor islands (1) being disposed on the supporter (2, 22, 23) and being insulated against it by an insulating film (21). Within the islands (1), circuit elements are formed. The circuit further comprises an auxiliary electrode (33) provided at the supporter (2, 22, 23).

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