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1. 发明授权

KR850000366B1 고체촬상소자 失效
公开(公告)号：KR850000366B1
公开(公告)日：1985-03-22
申请号：KR810001395
申请日：1981-04-23
申请人： HITACHI LTD
发明人： AOKI MASHAGAZU , OBA SHINYA , DAKOMODO IWAO , ANTO HIRUHISA , HANAMURA SYOJI , IJAWA RYUIJI
IPC分类号： H04N5/30

2. 发明专利

JP2001268441A SOLID-STATE IMAGE PICKUP DEVICE AND COMMUNICATION EQUIPMENT USING THE SAME 失效
公开(公告)号：JP2001268441A
公开(公告)日：2001-09-28
申请号：JP2000071867
申请日：2000-03-15
申请人： HITACHI LTD
发明人： OBA SHINYA , KUBO SEIJI , AKIMOTO HAJIME , NISHIMURA RYUSHI
IPC分类号： H01L27/146 , H04N5/232 , H04N5/335 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image pickup device and communication equipment capable of reducing the performance dispersion of amplifiers for respective pixels and noise in a CMOS sensor and improving the sensitivity of the sensor. SOLUTION: This solid-state image pickup device by a 1-chip CMOS sensor is constituted of a pixel region part 1, a vertical scanning circuit 2, a charge transfer part 3, a vertical amplifier part 4, a horizontal scanning circuit 5, a correction program memory 6, a correction information memory 7, an A/D converter 8 and a horizontal line memory 9, etc. The respective circuits are formed on the same semiconductor substrate of single crystal silicon or the like by a semiconductor manufacture technique. Especially, the information of the performance dispersion of the respective amplifiers based on the illuminance dependence characteristics in high illuminance, low illuminance and a dark state of the respective amplifiers of the vertical amplifier part 4 is stored in the correction information memory 7, and the performance dispersion of the amplifiers for the respective pixels is corrected in a digital processing by using the information stored in the correction information memory 7.

3. 发明专利

JPH1195789A VOICE RECOGNITION SYSTEM AND SPEAKER ADAPTIVE METHOD IN THE SAME 失效
公开(公告)号：JPH1195789A
公开(公告)日：1999-04-09
申请号：JP25984497
申请日：1997-09-25
申请人： HITACHI LTD
发明人： HATAOKA NOBUO , OBUCHI YASUNARI , ODAKA TOSHIYUKI , AMANO AKIO , EJIRI MASAKAZU , OBA SHINYA
IPC分类号： G10L15/10 , G10L15/00 , G10L15/24 , G10L15/28 , G10L3/00
摘要： PROBLEM TO BE SOLVED: To enable anyone to use a voice recognition system effectively by performing a voice recognition while using the acoustic model of the voice recognition system suited for the feature of a speaker estimated in accordance with a detected physical feature information of the speaker to compensating the degradation of a recognition rate to be caused by depending on feature of the voice of a user. SOLUTION: The feature of the user is extracted from a voice 100 in the personal information extracting part 310 of the voice of the user by using the voice 100 or measured results of a mat type scale 160 and/or a sheet position detecting meter 170 as input information. Moreover, when the measured information of the mat type scale 160 and/or the sheet potion detecting meter are used as the input information, the information are converted into information of a weight or a stature in a physical feature converting part 320 and these are converted into the feature of the voice of the user in a voice feature conversion part 330. Then, a speaker adaptation is executed in a speaker adaptation part 350 for acoustic model so that an acoustic model to be used in the voice recognition becomes the acoustic model suited for the user based on the personal information detected in this manner.

4. 发明专利

JPH0391263A SOLID STATE IMAGE ELEMENT 失效
公开(公告)号：JPH0391263A
公开(公告)日：1991-04-16
申请号：JP22735989
申请日：1989-09-04
申请人： HITACHI LTD
发明人： ONO HIDEYUKI , OBA SHINYA , ANDO HARUHISA , NAKAI MASAAKI
IPC分类号： H01L27/148 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To suppress the increase of dark currents to the minimum so as to enable the miniaturization of an element by forming a cavity only at the signal charge transfer part from a photodiode to a transfer channel. CONSTITUTION:Only the one part 4b of the substrate surface of a signal charge transfer path is made lower than the substrate surface 45 of a photodiode part and the substrate surface 44 of a vertical CCD. Hereby, a cavity part 46 to become the region, where dark currents occur principally, can be minimized with the channel of the signal charge transfer path being kept long. That is, the increase of dark currents can be suppressed to the minimum, and the miniaturization of the element can be realized.

5. 发明专利

JPH01154561A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH01154561A
公开(公告)日：1989-06-16
申请号：JP31192687
申请日：1987-12-11
申请人： HITACHI LTD
发明人： KOJIMA KOJI , OBA SHINYA , MATSUURA TATSUJI , AKIMOTO HAJIME
IPC分类号： H01L29/78 , H01L29/10
摘要： PURPOSE:To prevent channel charge from flowing out to one of source and drain electrodes while ensuring high speed operation of an element, by increasing or decreasing a threshold voltage of a field-effect transistor used as a switching element monotonously in a longitudinal direction of the channel. CONSTITUTION:On a p-type semiconductor substrate 9, there are formed highly doped N-type regions 5, 6 which are to be electrodes for transferring charges, and a channel region 7 is formed between the two electrodes. Concentration of the P-type impurities in the channel region 7 is increased monotonously from the electrode 5 towards the electrode 6, so that the bottom of a conduction band is inclined as shown in the diagram showing structure of energy bands. The channel region 7 is controlled by a voltage applied to a gate electrode 1 formed through a gate insulating film 8 on the surface of the region 7. The gate electrode 1 is electrically insulated from drain and source electrodes 2, 3 by an interlayer insulating film 4. During transition of the transistor from ON to OFF, carries left in the channel region under the gate electrode flow towards the electrode 3 according to the inclination of the energy level. Therefore, no channel charge flows out to the electrode 2.

6. 发明专利

JPH01103860A SOLID-STATE IMAGE SENSING DEVICE 失效
公开(公告)号：JPH01103860A
公开(公告)日：1989-04-20
申请号：JP15228688
申请日：1988-06-22
申请人： HITACHI LTD
发明人： AKIMOTO HAJIME , OBA SHINYA
IPC分类号： H01L27/00 , H01L27/14 , H01L27/146 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374
摘要： PURPOSE:To inhibit the generation of a leakage current in signal conductors by a method wherein MOS transistor switches are formed in a semiconductor provided on an insulator on a semiconductor substrate and another MOS transistor switches are formed in the substrate in series to these MOS transistor switches. CONSTITUTION:A signal charge is inputted from a wiring 24 connected to a vertical signal conductor 510 and when gates 20 and 23 are opened, the signal charge is outputted from a wiring 26 connected to a horizontal signal conductor 26. As a drain 22 of a MOS transistor switch 516 or 518 is separated from an Si substrate by a thick insulating film 13, its parasitic capacity is far smaller than that of a drain 19 of a MOS transistor switch 515 or 517 provided in a normal Si substrate. Accordingly, the capacity, which parasitizes the signal conductor 526 and the wire 26 at a time when the gates 20 and 23 are both closed, can be reduced.

7. 发明专利

JPS63256067A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS63256067A
公开(公告)日：1988-10-24
申请号：JP8982987
申请日：1987-04-14
申请人： HITACHI LTD
发明人： IMAIDE TAKUYA , NODA MASARU , OBA SHINYA , ANDO HARUHISA , TAKAHASHI KENJI
IPC分类号： H04N5/217 , H04N5/335 , H04N5/359 , H04N5/372 , H04N5/374 , H04N5/378
摘要： PURPOSE:To suppress smear caused in a difference circuit by adopting a clamp type for the difference circuit so as to clamp the latter half of a picture element thereby obtaining a difference between adjacent picture elements. CONSTITUTION:In receiving a clamp pulse CP with a high level, the difference circuit 7 clamps to a prescribed potential decided forcibly by a constant voltage source 76 to the input of an amplifier 74. Even after the clamp pulse CP goes to a low level, the input of the amplifier 74 keeps said constant voltage till the picture element is switched, and when the picture element is switched, the voltage is changed by the voltage difference between new and old picture elements. Then the input of the amplifier 74 holds the difference voltage between adjacent picture elements till the clamp pulse CP goes to a high level next. Thus, a correct waveform without smear is obtained at an output terminal 17.

8. 发明专利

JPS63100879A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS63100879A
公开(公告)日：1988-05-02
申请号：JP24524986
申请日：1986-10-17
申请人： HITACHI LTD
发明人： AKIMOTO HAJIME , OZAKI TOSHIBUMI , OBA SHINYA
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/357 , H04N5/359 , H04N5/363 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： PURPOSE:To suppress smear phenomenon and to decrease noise by providing a means amplifying an electric charge by an incident light into a voltage or a current and a detection means obtaining a difference of outputs of an ampli fier means when a signal charge is given and/or not to an input section of the amplifier means. CONSTITUTION:When a light is made incident in photodiodes 11, 21, 31, and 41, a signal charge is stored in each photodiode corresponding to the incident luminous quantity. The signal charge is converted into a signal voltage or a signal current sequentially by amplifier means 19, 29, 39 and 49 and the result is outputted as a video signal from a means 5 to apply the correlation double sampling method and an output amplifier 9 via a signal line 4. Thus, the deterio ration in the S/N due to leakage of noise charge in the signal path from the photodiodes 11, 21, 31 and 41 to the output amplifier is suppressed remarkably. The smear phenomenon caused by the leaked noise charge caused by the inci dent light is also suppressed considerably.

9. 发明专利

JPS6390165A OPTICAL SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS6390165A
公开(公告)日：1988-04-21
申请号：JP23457586
申请日：1986-10-03
申请人： HITACHI LTD
发明人： ONO HIDEYUKI , ANDO HARUHISA , AKIMOTO HAJIME , NAKAI MASAAKI , OBA SHINYA , KOIKE NORIO , OZAKI TOSHIBUMI
IPC分类号： H01L27/146 , H01L31/0216 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To shield a leakage light without reducing a sensitivity due to an aluminum film by determining the hole of a photodiode by a wiring aluminum film and shielding the aluminum film by a pure aluminum film of upper layer so as not to extend from the aluminum film. CONSTITUTION:The periphery of a drain 4 is shielded by aluminum wirings connected to the drain 4 in a picture element of an MOS solid state image sensing device so that a light is not incident directly to the drain 4. A pure aluminum film 21 is so provided on a wiring aluminum film 7 as not extend therefrom. Thus, a leakage light through the film 7 is shielded without deteriorating the hole of a photodiode 3 to reduce a smear phenomenon.

10. 发明专利

JPS6345856A SOLID-STATE IMAGE SENSOR 失效
公开(公告)号：JPS6345856A
公开(公告)日：1988-02-26
申请号：JP18844286
申请日：1986-08-13
申请人： HITACHI LTD
发明人： ONO HIDEYUKI , ANDO HARUHISA , AKIMOTO HAJIME , OBA SHINYA , NAKAI MASAAKI
IPC分类号： H01L27/14 , H01L27/148 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To reduce a smear phenomenon by a method wherein the thicknesses of interlayer insulating films are made thinner on the sides of the end parts of a light-shielding part than in the center of the light-shielding part. CONSTITUTION:The thicknesses of interlayer insulating films 14 and 15 between a light-shielding film 16 and a vertical CCD gate electrode 7 are formed thinner at the sides of the end parts of the light-shielding film than at the center of the light-shielding film 16. If the interlayer insulating films are formed in such a way, a smear phenomenon due to the leakage of light into the interior can be reduced because the leakage port of light becomes narrower. Moreover, by making thinner parts only of the interlayer insulating films, the increase in the parasitic capacitance between the CCD gate electrode 7 and the light- shielding film 16 and the deterioration of interlayer withstand voltage can be inhibited.

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