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1. 发明专利

DE1764560B1 未知
公开(公告)号：DE1764560B1
公开(公告)日：1971-11-25
申请号：DE1764560
申请日：1968-06-27
申请人： HITACHI LTD
发明人： MATSUSHITA MACHIKO , KOGA YASUSHI , NISHIMATSU SHIGERU , TOKUYAMA TAKASHI
IPC分类号： H01L29/78 , C23C16/40 , H01L21/316 , H01L23/29 , H01L29/00 , H01L29/51 , H01L1/10

2. 发明授权

US3682699A Method of vapor growth of a semiconductor crystal 失效
标题翻译：半导体晶体的蒸气生长方法
公开(公告)号：US3682699A
公开(公告)日：1972-08-08
申请号：US3682699D
申请日：1969-10-20
申请人： HITACHI LTD
发明人： KOGA YASUSHI , KOZUKA HIROTSUGU , TAUCHI SHOJI
IPC分类号： C30B25/02 , C23C16/44 , C23C16/458 , C30B23/00 , G12B11/02 , H01L21/205 , H03J1/02 , B01J17/28
CPC分类号： G12B11/02 , C30B23/00 , H03J1/02 , Y10S148/006
摘要： A METHOD OF VAPOR GROWTH OF A SEMICONDUCTOR CRYSTAL BY ALLOWING A REACTION GAS TO FLOW IN PARALLEL TO ONE PRINCIPAL SURFACE OF A SEMICONDUCTOR WAFER DISPOSED IN A REACTION TUBE UNDER REDUCED PRESSURE, THEREBY DEPOSITING A SEMICONDUCTOR CRYSTAL LAYER UNIFORMLY ON THE PRINCIPAL SURFACE OF SAID SEMICONDUCTOR WAFER.

3. 发明授权

US3668095A Method of manufacturing a metallic oxide film on a substrate 失效
标题翻译：在基材上制造金属氧化物膜的方法
公开(公告)号：US3668095A
公开(公告)日：1972-06-06
申请号：US3668095D
申请日：1970-03-26
申请人： HITACHI LTD
发明人： KATTO HISAO , KOBAYASHI KAZUNARI , KOGA YASUSHI , KOYAMA MACHIKO
IPC分类号： C23C16/507 , H01L23/29 , B01K1/00 , B32B15/04
CPC分类号： C23C16/507 , H01L23/291 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A method for manufacturing a thin, highly pure metallic oxide film by the use of glow discharge on a substrate including the steps of preparing a mixture gas of oxygen and a metallic halide with controlled pressure in an evacuated chamber into which a substrate is placed, applying a high alternating electrical field of a frequency higher than 1 KHz to the chamber to produce the glow discharge adjacent to the substrate, thereby causing the required chemical reaction for the formation of the metallic oxide.
摘要翻译：一种通过在衬底上使用辉光放电来制造薄的，高纯度的金属氧化物膜的方法，包括以下步骤：将氧和金属卤化物的混合气体以受控的压力制备在其中放置衬底的抽真空室中，施加频率高于1KHz的高交变电场到腔室以产生与衬底相邻的辉光放电，从而导致形成金属氧化物所需的化学反应。

4. 发明专利

DE3277353D1 PHOTODIODE 未知
公开(公告)号：DE3277353D1
公开(公告)日：1987-10-22
申请号：DE3277353
申请日：1982-10-01
申请人： HITACHI LTD
发明人： OUCHI HIROBUMI , MATSUDA HIROSHI , MORIOKA MAKOTO , KAWATA MASAHIKO , KURATA KAZUHIRO , KOGA YASUSHI
IPC分类号： H01L31/00 , H01L31/107 , H01L31/10
摘要： Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate (11), at least a first semiconductor layer (13) which exhibits a first conductivity type, a second semiconductor layer (14) which is disposed on said first semiconductor layer (13), which has a forbidden band gap greater than that of said first semiconductor layer (13) and which exhibits the first conductivity type, a p-n junction which is formed by a region (16) disposed in said second semiconductor layer (14) and exhibiting a second conductivity type and a third semiconductor layer (15) which is disposed on said second semiconductor layer (14), which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer (15) is usually made of a group III-V compound semiconductor of a quarternary system. A photosensitive detective semiconductor device of low dark current can thus be provided.

5. 发明专利

DE1953247A1 未知
公开(公告)号：DE1953247A1
公开(公告)日：1970-05-14
申请号：DE1953247
申请日：1969-10-22
申请人： HITACHI LTD
发明人： KOGA YASUSHI , KOZUKA HIROTSUGU , TAUCHI SHOJI
IPC分类号： C30B25/02 , C23C16/44 , C23C16/458 , C30B23/00 , G12B11/02 , H01L21/205 , H03J1/02 , B01J17/28

6. 发明专利

DE1939592A1 Aluminium chemical vapour deposition on silicon 未知
公开(公告)号：DE1939592A1
公开(公告)日：1970-02-26
申请号：DE1939592
申请日：1969-08-04
申请人： HITACHI LTD
发明人： KOZUKA HIROTSUGU , KOGA YASUSHI
IPC分类号： C23C16/40 , H01L21/316 , H01L23/29 , C23C11/08
摘要： Aluminium dioxide layer is applied to a silicon body in two stages: (i) heating of the silicon body to a temp. exceeding that at which an organic aluminium compound is thermally decomposed; (ii) organic aluminium compound in vapour form is led, together with a carrying gas, through a blow pipe, the outlet of which is at a short distance of the silicon body so that the vapour of the organic aluminium compound is thermally decomposed in the proximity of the silicon body and the aluminium oxide is deposited on this body.

7. 发明专利

JPS5857761A PHOTO SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5857761A
公开(公告)日：1983-04-06
申请号：JP15628381
申请日：1981-10-02
申请人： HITACHI LTD
发明人： OOUCHI HIROBUMI , MATSUDA HIROSHI , MORIOKA MAKOTO , KAWADA MASAHIKO , KURATA KAZUHIRO , KOGA YASUSHI
IPC分类号： H01L31/107 , H01L31/10
摘要： PURPOSE:To lower a dark current and stabilize interface by stacking the layer having a large forbidden energy band width Eg and a multi-atomic layer including the composition atoms thereof on the semiconductor layer having a small Eg and by covering it with a protection film. CONSTITUTION:On the epitaxial layer 12 on the n type InP 11, the In0.61Ga0.39 As0.83P0.17 13 having a smaller Eg is surrounded by the n type InP 14 having a larger Eg, and the incident light is absorbed by the layer 13. In addition, at the surface, the insulating film 17 is provided over the n type In0.9Ga0.1As0.2P0.8 15 having a large Eg and the characteristic at the interface is stabilized and a dark current is lowered. The p-n junction is isolated from the layer 13 and maintains the hard junction characteristic by the impurity concentration distribution and efficiently collects the photo exciting carrier. Moreover, since the depletion layer width can be made wide, the junction capacitance can be made small and the element can operate at a high speed.

8. 发明专利

JPS5824876A SAFETY DEVICE 失效
公开(公告)号：JPS5824876A
公开(公告)日：1983-02-14
申请号：JP12444882
申请日：1982-07-19
申请人： HITACHI LTD
发明人： SHIMADA JIYUICHI , FUKUZAWA TADASHI , MORIOKA MAKOTO , KUMADA AKIO , KURATA KAZUHIRO , KOGA YASUSHI , SEKO TAKESHI
IPC分类号： B60R21/00 , B60W30/00 , G01S17/88 , G01S17/93
摘要： PURPOSE:To achieve a highly sensitive detection by arranging a light transmitter with a light emitting diode as light source and a light receiver with a sensitivity to light emitted therefrom to receive light with the receiver as reflected from a target after it is irradiated thereto with a specified directivity by the transmitter. CONSTITUTION:An infrared light emitting diode 81 projects light in the direction determined by a projector once focused with a lens 82 as modulated light under a repeated pulse modulation of a 10% duty, 1musec, with a pulse oscillator 83 and a pulse amplifier 85. The light thus projected is reflected from a vehicle ahead and as the reflected light 86, it is converted into an electrical signal with an Si photodetector 89 via a condensor 88. Noise light components are removed from this electrical signal with a tuning circuit 90 adapted to only tune in the infrared light projected. Then, after amplified with an amplifier 91, it is converted into direct current with a rectifier circuit 92 and taken into a microcomputer 94 as digital signal through a digital-analog converter 93. Depending on CH1 and CH2 signals, an operation circuit 95 of an alarm is actuated as required to give a warning to an alarm 96.

9. 发明专利

JPS5857760A PHOTO SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5857760A
公开(公告)日：1983-04-06
申请号：JP15628281
申请日：1981-10-02
申请人： HITACHI LTD
发明人： OOUCHI HIROBUMI , MATSUDA HIROSHI , MORIOKA MAKOTO , KAWADA MASAHIKO , KURATA KAZUHIRO , KOGA YASUSHI
IPC分类号： H01L31/107 , H01L31/10
摘要： PURPOSE:To improve dark current, junction capacitance and photo-electric conversion efficiency by laminating semiconductor layer considering the forbidden energy band width and impurity concentration thickness. CONSTITUTION:The n-InP 12 in the thickness of 1.5mum and the In1-xGaxAsyPy-1 14 with the thickness of 1.3mum and narrow forbidden energy band width which will becomes the active region are stacked on the n -InP substrate 11. Here, it is intended to increase light sensitivity by selecting x and y in such a relation that 0.47>=x>=0.25, y=x(0.48043+0.00327x) . Moreover, as the window layer, the n- InP 14 with wide forbidden energy band width and thickness of 1.8mum and the n-In1-xGaxAsyP1-y 15 of 0.2mum are stacked, the surface is covered with the SiO2 and an aperture is opened to the layer 15, and the Cd is diffused to the layer 14, thereby the p layer 16 in the depth of 0.7mum, reflection preventing film 17', surface protection film 17 and electrodes 18, 19 are formed. According to this structure, the characteristic of layer interface is stabilized and a dark current is decreased. A high performance photo semiconductor device can be obtained by setting the impurity concentrations of layers 13 and 14 as follow, N14>=N13, N cm .

10. 发明专利

JPS54152405A INFRAREDDRAY TRANSMITTER 失效
公开(公告)号：JPS54152405A
公开(公告)日：1979-11-30
申请号：JP5992278
申请日：1978-05-22
申请人： HITACHI LTD , YAGI ANTENNA
发明人： KOYAMA SATOSHI , MORIFUJI MOTOYOSHI , TAKAHASHI AKIRA , KOGA YASUSHI , KURATA KAZUHIRO , MORIOKA MAKOTO
IPC分类号： H04J14/00 , H04B10/114 , H04B10/524 , H04J14/02
摘要： PURPOSE:To make it possible to send many different volumes of information by arraying several LEDs at narrow intervals and by sending photo signals from respective LEDs, superposed upon the same light flux, toward the space. CONSTITUTION:On the focus of reflecting mirror 1, several LEDs 2 are arrayed at narrow intervals and radiator 3 of them is directed against reflecting mirror 1 to reflect 1 infrared rays. Then, a photo signal from each LED2 is superposed upon the same light flux and sent out to the sapce. Thus, a large quantity of infrared rays are superposed and sent out by a single optical system, thereby making it possible to send many different volumes of information.

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