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1. 发明专利

JPS57190366A MANUFACTURE OF SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JPS57190366A
公开(公告)日：1982-11-22
申请号：JP7502881
申请日：1981-05-20
申请人： HITACHI LTD
发明人： KAGAMI TERUYUKI , KANZAWA RIYOUSAKU , YATSUNO KOUMEI
IPC分类号： H01L29/84
摘要： PURPOSE:To simplify a manufacturing process of a pressure sensitive Si diaphragm by a method wherein the front and rear surfaces of an N type Si substrate is directly diffused with high B concentration for the formation of a first and second doped layers whereof the first is covered with an epitaxially grown N type Si layer and the second is to serve as an etching resist. CONSTITUTION:B is diffused into the front and rear surfaces of a disk shaped Si substrate 9 for the formation of a P type first doped layer 10 and a second doped layer 11 and the layer 10 is covered with an N type Si layer 12 grown epitaxially and then with a heat oxidated film 13. The central part is provided with an opening wherethrough ions are implanted for the provision in the exposed layer 12 of a P type region 14 to serve as a distortion gage. The heat oxidated fiom 15 on the rear side layer 11 is applied a photoresist film 16 and the rear side lamination is provided with an opening 18 for the formation of a diaphragm. The remaining film 16 is used as a mask in a process of etching away the substrate 9 for the exposure of the layer 10 in the front surface lamination for the production of a desired diaphragm 19.

2. 发明专利

JPS5413263A ELECTRODE FORMING METHOD FOR SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS5413263A
公开(公告)日：1979-01-31
申请号：JP7788677
申请日：1977-07-01
申请人： HITACHI LTD
发明人： KANZAWA RIYOUSAKU
IPC分类号： H01L21/60 , H01L21/28
摘要： PURPOSE:To enable to manufacture small pad distance simply, by forming solder film with vacuum evaporation through the use of metallic mask after coating the IC element surface other than soldering film forming region with the plated resist such as photo resist.

3. 发明专利

JPS5273678A SEMICONDUCTOR DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPS5273678A
公开(公告)日：1977-06-20
申请号：JP14952275
申请日：1975-12-17
申请人： HITACHI LTD
发明人： KANZAWA RIYOUSAKU , MURAKAMI SUSUMU , YAGI HIDEYUKI
IPC分类号： H01L21/316 , H01L21/31
摘要： PURPOSE:To obtain a highly reliable protecting film by using a Ta film.

4. 发明专利

JPS6021528A PLASMA GAS-PHASE REACTOR 失效
公开(公告)号：JPS6021528A
公开(公告)日：1985-02-02
申请号：JP12772783
申请日：1983-07-15
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： KURITA SHINICHI , KANZAWA RIYOUSAKU , HIRAO MITSURU , YAGISHITA KENJI , KAMEI TATSUYA
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To form a thin film having uniform distribution of thickness on the surface of a sample by arranging a pipe having a plurality of through holes with the one end closed to introduce reaction gas into the container in the radius direction of a sample holding substrate having a rotating mechanism. CONSTITUTION:A reaction container 1 is formed cylindrically and a disc type sample holding substrate 2 and an electrode 3 facing thereto are provided at the inside of such container. The sample holding substrate 2 is uniformly heated by a resistance heating type heater 4 arrnged at the lower side of substrate 2 in the reaction container 1, and it is also rotated at a constant speed by the rotating mechanism 5. A reaction gas supply pipe 6 is guided between the substrate 2 and electrode 3 from the outside of reaction container 1 and is almost parallel to the substrate. The internal end in the reaction container is closed and a plurality of through holes 7 opening toward the substrate 2 with the interval which becomes dense to the edge from the area corresponding to the center of substrate 2 are provided.

5. 发明专利

JPS57147242A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57147242A
公开(公告)日：1982-09-11
申请号：JP3136081
申请日：1981-03-06
申请人： HITACHI LTD
发明人： ICHIKAWA NORIO , MINORIKAWA HITOSHI , TAKAHASHI MINORU , KOBAYASHI RIYOUICHI , KANZAWA RIYOUSAKU
IPC分类号： H01L21/316 , H01L21/225 , H01L29/84
摘要： PURPOSE:To remove ionic impurity from a semiconductor device by removing a thermally oxidized film becoming a mask in case of diffusing the impurity and the etching the surface of wafer. CONSTITUTION:A p type impurity layer 2 and a channel stopper 3 are formed on an n type substrate 1. Then, the film becoming the mask in case of diffusing the impurity is removed with fluoric acid, and the exposed surface of a wafer is etched with the fluoric acid. Subsequently, the surface of the wafer is covered with a passivation film which is made of a silicon oxidized film 7A, a PSG film 7B and a silicon oxidized film 7C. Accordingly, even if ionic impurity is mixed with the boundary between the thermally oxidized film and a substrate due to the diffusion, it can be removed by the etching after removing the thermally oxidized film.

6. 发明专利

JPS5792870A SEMICONDUCTOR STRAIN GAUGE 失效
公开(公告)号：JPS5792870A
公开(公告)日：1982-06-09
申请号：JP16807880
申请日：1980-12-01
申请人： HITACHI LTD
发明人： YAMADA KAZUJI , NISHIHARA MOTOHISA , KANZAWA RIYOUSAKU , MINORIKAWA HITOSHI , ITOU TATSU
IPC分类号： G01B7/16 , H01L29/84
摘要： PURPOSE:To improve the dielectric strength characteristic by a method wherein a specific resistivity of an n type substrate is regulated, so that an inversion voltage between two p type diffused resistance layers is made equal to a yield voltage of a p-n junction between the resistance layer and the substrate. CONSTITUTION:A voltage E1 is applied to p type resistance layers 7-5 of an n type substrate 2. If E1 is increased gradually, the voltage reaches the yield point finally. The lower the density of the substrate, the higher the yield voltage. On the other hand, a continuous electron layer is finally formed between electrode 12-13 by increasing of the voltage E1, so that an inversion layer in which positive holes 20 exist continuously is formed on the substrate 2 with an oxide film in between and a large leakage current is generated. In this case, contrary to the yield voltage, the lower the density of the substrate, the lower the inversion voltage. And the density of the substrate is inversely proportional to a specific resistivity of the substrate. Then if the specific resitivity of the substrate is specified in such a manner that the inversion voltage between the respective diffused resistance layers and the yield voltage of a p-n junction between the resistance layer and the substrate are made approximately equal, the inversion voltage and the yield voltage are balanced and the dielectric strength characteristic is in the optimum condition, so that it is improved significantly.

7. 发明专利

JPS53131766A SEMICONDUCTOR DEVICE ELECTRODE STRUCTURAL BODY AND PRODUCTION OF THE SAME 失效
公开(公告)号：JPS53131766A
公开(公告)日：1978-11-16
申请号：JP4591577
申请日：1977-04-22
申请人： HITACHI LTD
发明人： TAKAHASHI SHIGERU , HOSOKAWA YOSHIKAZU , KANZAWA RIYOUSAKU , SUGAWARA YOSHITAKA
IPC分类号： H01L21/60 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To obtain a metal film electrode structual body of a specified size by evaporating underlying metal films by using a metal mask of a hole diameter larger than the specified size and removing part thereof through photoetching.

8. 发明专利

JPS5931404A Pressure sensor circuit 失效
标题翻译：压力传感器电路
公开(公告)号：JPS5931404A
公开(公告)日：1984-02-20
申请号：JP14106782
申请日：1982-08-16
申请人： Hitachi Ltd
发明人： YAMADA KAZUJI , SATOU HIDEO , KATOU KAZUO , KAWAKAMI HIROJI , KANZAWA RIYOUSAKU , SASAYAMA TAKAO
IPC分类号： G01L9/04 , G01B7/16 , G01L9/00 , G01L9/06 , G01D3/04
CPC分类号： G01L9/0054 , G01L9/065 , Y10S323/907
摘要： PURPOSE:To perform precise temperature compensation regardless of the fluctuation of a source voltage, by using a constant current souce proportional to the absolute temperature, a constant current souce immue from the influence of temperature, and a constant current source proportional to the temperature characteristic of a gauge resistance. CONSTITUTION:The circuit consisting of transistors (TR) Q1 and Q2, resistances R3 and R4 whose temperature coefficients are nearly zero, and a constant current source 19 is used frequently as a constant current souce in general in the form of an integrated circuit. This circuit supplies a current IT proportional to absolute temperature T and a current IC which does not depend upon the temperature. The circuit consisting of a TRQ3, constant current source 20, amplifier 21, resistance R5 which is almost under no influence of temperature, and resistance R6 whose is nearly equal to a diffused resistance constituting a bridge 22 generates a constant current IR (SINK) nearly equal to the temperature coefficient of the gauge resistance. Then, a current IT+IC-IR is supplied to the bridge 22 by those circuits.
摘要翻译：目的：通过使用与绝对温度成比例的恒定电流来执行精确的温度补偿，无论电源电压是否波动，恒温电流均来自温度的影响，恒定电流源与温度特性成正比表阻。构成：通常以集成电路的形式，将晶体管（TR）Q1和Q2，温度系数接近零的电阻R3和R4以及恒定电流源19频繁地用作恒定电流源的电路。该电路提供与绝对温度T成比例的电流IT和不依赖于温度的电流IC。由TRQ3，恒流源20，放大器21，几乎不受温度影响的电阻R5和几乎等于构成桥22的扩散电阻的电阻R6组成的电路产生近似于恒定电流IR（SINK）等于表面电阻的温度系数。然后，这些电路向桥接器22提供电流IT + IC-IR。

9. 发明专利

JPS5852882A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JPS5852882A
公开(公告)日：1983-03-29
申请号：JP15055581
申请日：1981-09-25
申请人： HITACHI LTD
发明人： KAGAMI TERUYUKI , KANZAWA RIYOUSAKU , YATSUNO KOUMEI
IPC分类号： H01L29/84
摘要： PURPOSE:To stabilize pressure-electric output characteristics, and to improve the breakdown strength of the diaphragm of a semiconductor substrate by forming the first and second high-concentration diffusion layers of the end section of the diaphragm section at two stages and prescribing the contour of the end section of the diaphragm by the boundary line of the stepped sections of the first and second high-concentration diffusion layers. CONSTITUTION:A first boron high-concentration diffusion layer 11 is formed to an N type Si substrate 10 through a mask 20 made of silicon oxide, etc., and a second boron high-concentration diffusion layer 12 is shaped to the whole surface. An N type Si layer 13 is formed to the upper surface of the layer 12 through epitaxial growth, and a pressure sensitive element 14 is shaped into said N type Si layer 13. A KOH-alcohol group anisotropic etching liquid is worked to the back of the substrate 10 treated, and the thin diaphragm section 5 with approximately 25mum thickness is formed through etching. In this case, the size and position of an etching mask must be set preveiously so that the region of anisotropic etching collides with the high-concentration diffusion layer 11.

10. 发明专利

JPS57145099A ETCHING LIQUID FOR SILICON 失效
公开(公告)号：JPS57145099A
公开(公告)日：1982-09-07
申请号：JP2988381
申请日：1981-03-04
申请人： HITACHI LTD
发明人： KAGAMI TERUYUKI , KANZAWA RIYOUSAKU , YATSUNO KOUMEI
IPC分类号： C09K13/06 , C30B29/06 , C30B33/00 , C30B33/10
摘要： PURPOSE:To effect the flat and smooth etching of the (100) surface of silicon, by the use of a three-component etching liquid composed of KOH, H2O and C2H5OH wherein the composition of said liquid falls within a specific quadrilateral in a triangular diagram denoted by wt%. CONSTITUTION:The composition of the objective three-component etching liquid composed of KOH, H2O and C2H5OH falls within the quadrilateral ABCD in the triangular diagram denoted by wt%, wherein the points A, B, C and D are defined by the compositions (49% KOH, 50% H2O, 1% C2H5OH), (27% KOH, 72% H2O, 1% C2H5OH), (20% KOH, 55% H2O, 25% C2H5OH) and (28% KOH, 25% H2O, 47% C2H5OH), respectively. The etching liquid etches the (100) surface of silicon smoothly to afford a flat etched surface.

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