会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • THERMAL RECORDING HEAD OF THICK FILM TYPE THERMAL PRINTER
    • JPS61229572A
    • 1986-10-13
    • JP7088885
    • 1985-04-05
    • HITACHI LTD
    • ISHII YOSHIYUKI
    • B41J2/335H01C7/00H05K1/16H05K3/28
    • PURPOSE:To enable a protective glass layer having excellent abrasion resistance to be provided at low temperature, by a method wherein SiO2 having excellent abrasion resistance and a low melting point glass are bonded to each other at the time of sintering. CONSTITUTION:The head comprises electrodes 3 oppositely provided on a ceramic substrate 4, a resistor 2 provided between the electrodes to constitute a heating element, and a protective layer 1 covering the resistor 2 and the electrodes 3. In providing the protective layer for a thick film resistor in the thick film type thermal printer, for example, 100pts.wt. of low melting point glass particles and 15-40pts.wt. of SiO2 particles are mixed with each other, the mixture is kneaded with 3pts.wt. of ethyl cellulose dissolved in 30pts.wt. of alpha-terpineol, the resultant material is applied to the resistor of the thermal recording head by printing through a stainless steel screen, followed by drying and sintering at 790 deg.C to provide the protective layer. The glass protective layer thus obtained is not only excellent in abrasion resistance but stable in thermal efficiency initially and on a long-time basis due to the low-temperature forming thereof.
    • 4. 发明专利
    • STRUCTURE OF SEMICONDUCTOR ELEMENT
    • JPH0290556A
    • 1990-03-30
    • JP24107388
    • 1988-09-28
    • HITACHI LTD
    • ISHII YOSHIYUKI
    • H01L23/44
    • PURPOSE:To detect a pressure increase in the interior of a sealing body due to abnormal heat generation at the time of trouble of a semiconductor element, to issue an alarm and to prevent the failure of the element by a method wherein a structure is provided with a structure to change physically to an increase in an internal pressure and the change is detected. CONSTITUTION:A package 3, a metal cap 1 and the interior of a metallic bellows cap 2 hold a coolant 10. An A pin 6 is soldered to a conductor of the ceramic package 3 and this conductor is wired to an A terminal 4 in the package 3. At the time of normal operation of a semiconductor, an electrical continuity is obtained between the A terminal 4 and a B terminal 5 and when an element 7 generates heat abnormally and a pressure in the interior of a sealing body is increased, the cap 2 is stretched upward. Accordingly, as the contact of the cap with the A pin 6 is eliminated and a continuity between the A and E terminals 4 and 5 is eliminated, an alarm circuit at an abnormal time can be constituted by whether there is an electrical continuity between the A and B terminals 4 and 5 or not at the time of normal operation and the time of abnormal heat generation.
    • 5. 发明专利
    • TEMPERATURE ABNORMALITY DETECTION CIRCUIT FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    • JPH0661414A
    • 1994-03-04
    • JP20879392
    • 1992-08-05
    • HITACHI LTDHITACHI MICOM SYST KK
    • ISHII YOSHIYUKIKOBAYASHI KOJINISHIKAWA HIDEKI
    • G01K7/00H01L23/58
    • PURPOSE:To provide a temperature abnormality detection circuit for semiconductor integrated circuit devices which can easily detect the temperature abnormality of a semiconductor integrated circuit device and with which the temperature can be set with high accuracy. CONSTITUTION:The detection circuit is formed on the semiconductor chip of a semiconductor integrated circuit device, detects the abnormal temperature rise of the semiconductor chip, and outputs a temperature abnormality signal when the circuit detects an abnormal temperature. In addition, the detection circuit is constituted of a temperature detection circuit 11 which outputs the temperature state of the semiconductor chip, temperature setting circuit 12 which is set in its designing and manufacturing states, comparator circuit 13 which compares the outputs of the circuits 11 and 12 with each other, and correction circuit which corrects the accuracy of the detection circuit when the accuracy drops. When the temperature detected by means of the circuit 11 exceeds a set value, the output difference between the circuits 11 and 12 becomes larger due to a difference in changing factor between the outputs of the circuits 11 and 12 caused by the temperature change and the circuit 13 outputs an interrupt signal for the temperature abnormality signal.
    • 6. 发明专利
    • COOLING STRUCTURE OF SEMICONDUCTOR ELEMENT
    • JPS63284837A
    • 1988-11-22
    • JP11881187
    • 1987-05-18
    • HITACHI LTD
    • ISHII YOSHIYUKI
    • H01L23/44
    • PURPOSE:To simplify a process and to perform effective cooling, by sealing a fluorine group coolant in a package and concurrently performing airtight sealing of the package. CONSTITUTION:A fluorine group coolant is hermetically sealed on a reduced pressure state in a structural body formed by mounting a cap airtightly on a package. For example, a semiconductor element 1 is connected with wiring electrodes housed in an inner room 3A of the package 3, through a brazing material 2. The package 3 and the cap 5 are coupled airtightly through the brazing material to be formed unitedly. A fluorine group coolant 4 with a boiling point of 102-253 deg.C, comparatively high, is sealed on a reduced pressure state in the inner room 3A of the package 3. If the coolant with the boiling point of 102-253 deg.C is sealed in a container just at the boiling point, the sealed-in coolant is supercooled at a room temperature after its hermetical sealing process and so pressure in the container is reduced. Since the boiling point of the coolant is also lowered and hence said coolant is easily vaporized by heat generation in an integrated circuit element, effective cooling can be performed by the use of heat of evaporation.
    • 7. 发明专利
    • SEALING STRUCTURE FOR SEMICONDUCTOR PACKAGE
    • JPS62108546A
    • 1987-05-19
    • JP24706085
    • 1985-11-06
    • HITACHI LTD
    • ISHII YOSHIYUKI
    • H01L23/02H01L23/10
    • PURPOSE:To prevent a short circuit due to the movement of a scattered solder material by welding solder being generated and scattered by decompression during the cooling of a sealing body to a metallic layer when the metallic layer is directed upward and a cap for hermetic sealing is welded. CONSTITUTION:Structure in which a cap 1 consisting of ceramics such as alumina, a connecting metal 4 with a solder material and a metallic layer 6 welding solder chips flying-in during sealing and a base body 2 composed of a semiconductor element 3 and a connecting metal 4' with the solder material are connected by the solder material 5 is formed. When the cap 1 and the base body to which the semiconductor element 3 is fitted are set through the solder material 5 and heated, the solder material 5 is melted and the cap 1 and the base body 2 are welded. The inside of sealing is decompressed through cooling, and solder chips fly into sealing. Accordingly, the flying-in solder chips are welded to the electrode 6, thus preventing the short circuit of the semiconductor element 3.
    • 10. 发明专利
    • THERMAL HEAD
    • JPS54139558A
    • 1979-10-30
    • JP4646078
    • 1978-04-21
    • HITACHI LTD
    • HARA HIDEKAZUISHII YOSHIYUKIIWAMOTO HIDEO
    • B41J2/335
    • PURPOSE:To make effective use of the respective advantages that thin film system and thick film system possess by making heating element parts by the thin film system and common lead multilayer wiring parts and driver multilayer wiring parts by the thick film system. CONSTITUTION:In the thermal head provided with the heating element part consisting of a multiplicity of heating resistance elements and mulilayer wiring parts for high speed driving of the heating resistance elements by dividing them to blocks on a high resistance substrate; a thin film substrate 10 formed with heating resistance elements 8 and electrodes 9 by a thin film system, a thick film substrate 11 formed with the mount portions of separating diodes 2 on ceramics, common lead multilayer wiring part 3, common lead terminal part 4 on ceramics by a thick film system and a thick film substrate 12 formed with the mount portions of the separating diodes 2, driver multilayer wiring part 5, driver terminal part 6 by a thick film system on ceramics are disposed and bonded by means of adhesives on a heat sink 7 composed of metal of good heat conductivity as a substrate.