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1. 发明专利

GB2156585B LIGHT-EMITTING DEVICE ELECTRODE 未知
公开(公告)号：GB2156585B
公开(公告)日：1987-10-21
申请号：GB8502982
申请日：1985-02-06
申请人： HITACHI LTD
发明人： SAWAI MASAAKI , KOBAYASHI MASAMICHI , HAYASHI SHOJI , NAKA HIROSHI , ICHIKI MASAHIRO
IPC分类号： H01L33/38 , H01S5/02 , H01S5/042 , H01S5/227 , H01S5/40 , H01L21/44
摘要： A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-curcuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.

2. 发明专利

GB2156585A LIGHT-EMITTING DEVICE ELECTRODE 未知
公开(公告)号：GB2156585A
公开(公告)日：1985-10-09
申请号：GB8502982
申请日：1985-02-06
申请人： HITACHI LTD
发明人： SAWAI MASAAKI , KOBAYASHI MASAMICHI , HAYASHI SHOJI , NAKA HIROSHI , ICHIKI MASAHIRO
IPC分类号： H01L33/38 , H01S5/02 , H01S5/042 , H01S5/227 , H01S5/40 , H01L21/44
摘要： A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-curcuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.

3. 发明专利

DE3037307A1 未知
公开(公告)号：DE3037307A1
公开(公告)日：1981-04-23
申请号：DE3037307
申请日：1980-10-02
申请人： HITACHI LTD
发明人： TAKAHASHI TAKEO , KURATA KAZUHIRO , ONO YUICHI , ITO KAZUHIRO , MORIOKA MAKOTO , MORI MITSUHIRO , TAKEMURA GINRO , SAKAMOTO MAKOTO , ICHIKI MASAHIRO , YASUDA YOUICHI , OUCHI HIROBUMI
IPC分类号： G02B6/42 , H01L27/15 , H01L31/12 , H04B9/00
摘要： An optical semiconductor device includes a light emitting element disposed on a silicon sub-mount having a light receiving element formed in a surface region. By virtue of integral arrangement of the light emitting element and the light receiving element, a single lens can be used for both optical transmission and optical reception, whereby an optical communication system can be manufactured very inexpensively. Further, transmission and reception can be carried out simultaneously.

4. 发明专利

JPS60217685A LIGHT-EMITTING ELEMENT 失效
公开(公告)号：JPS60217685A
公开(公告)日：1985-10-31
申请号：JP7281984
申请日：1984-04-13
申请人： HITACHI LTD
发明人： SAWAI MASAAKI , KOBAYASHI MASAMICHI , HAYASHI SHIYOUJI , NAKA HIROSHI , ICHIKI MASAHIRO
IPC分类号： H01L27/15 , H01L21/301 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/227
摘要： PURPOSE:To reduce the rate of generation of a short circuit by a projecting electrode section by preventing the extension of an anode electrode section in the periphery of a laser chip, bevelling the corner sections of the anode electrode section and further keeping the anode electrode section away from the corners of the laser chip. CONSTITUTION:The main surface side of a substrate 4 except an electrode contact region in multilayer growth layers 2 is coated with an insulating film 12. An anode electrode 3 consisting of an Au group electrode is formed on the main surface side of the substrate 4. The anode electrode 3 extends in the peripheral section of a laser chip 1 corresponding to the end section of a resonator, but other peripheral sections are separated from the periphery of the laser chip 1 by size such as approximately 50mum. Four corners of the anode electrode 3 corresponding to the corner sections of the laser chip 1 consisting of a rectangle are bevelled. Consequently, when a wafer is divided, probability in which a broken section reaches to the anode electrode section 3 is reduced extremely even when the corner of the laser chip 1 taking the rectangule is broken. Accordingly, the electrode does not hang down due to the breaking of the corner section of the laser chip 1, and the rate of generation of a short circuit can be reduced.

5. 发明专利

JPS59159583A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：JPS59159583A
公开(公告)日：1984-09-10
申请号：JP3276483
申请日：1983-03-02
申请人： Hitachi Ltd
发明人： KOBAYASHI MASAMICHI , ICHIKI MASAHIRO
IPC分类号： H01L33/30 , H01L33/62 , H01S5/00 , H01S5/02 , H01S5/022
CPC分类号： H01S5/02276 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/32013 , H01L2224/45 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/48465 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01S5/0201 , H01S5/02212 , H01S5/02248 , H01S5/02272 , H01S5/0683 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE:To enable the automation of assembly by mounting a light emitting element on an insulation substrate whereon an Au film is formed and then leading out electrodes from the upper surface of said element and the surface of the Au film by wire bonding. CONSTITUTION:A metallic thin film 11 and the Au thin film 12 are formed on the substrate 10, and unnecessary parts are removed by patterning. Next, a metallic film 13 is formed at the part for mounting a laser diode element 16, and further a solder 15 is formed by a lift-off method. Successively, the substrate 10 is devided into individual pellets, and said element 16 is placed on the solder 15 and then hardened by fusing the solder by heating. Then, the Au wires 17 and 18 are connected by wire bonding. Thus, the soldering of an Au pedestal is unnecessitated, and accordingly automatic assembly becomes simple.
摘要翻译：目的：通过将发光元件安装在形成Au膜的绝缘基板上，然后通过引线接合从所述元件的上表面和Au膜的表面引出电极，从而实现组装自动化。构成：在基板10上形成金属薄膜11和Au薄膜12，通过图案化除去不必要的部分。接下来，在用于安装激光二极管元件16的部分处形成金属膜13，并且通过剥离方法形成焊料15。接下来，将基板10分离成单独的颗粒，并且将所述元件16放置在焊料15上，然后通过加热熔化焊料而硬化。然后，金线17和18通过引线接合连接。因此，不需要Au基座的焊接，因此自动组装变得简单。

6. 发明专利

JPS56112775A LIGHT EMITTING SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS56112775A
公开(公告)日：1981-09-05
申请号：JP1554780
申请日：1980-02-13
申请人： HITACHI LTD
发明人： SHIGE NORIYUKI , ICHIKI MASAHIRO , YASUDA YOUICHI
IPC分类号： H01L33/08 , H01L33/20 , H01L33/30
摘要： PURPOSE:To obtain the light emitting semiconductor element having high light output by setting the crystal mixture ratio gradient x-y at higher than 0.12 in the p-n junction of an n type layer of AlxGa1-xAs and a p type layer of AlyG1-yAs. CONSTITUTION:In the light emitting semiconductor element having a transparent n type (or p type) substrate 1 formed of AlzGa1-zAs mixed crystal, a p type layer 2 formed of AlyGa1-yAs and an n type layer 3 formed of AlxGa1-xAs, the crystal mixture ratio gradient x-y is set at equal to 0.12 or higher than that as (x-y>= 0.12). When it is set in this range, the light output and intensity thereof can be improved twice to three times as compared with the case of x-y=0.1.

7. 发明专利

JPH0470793B2 失效
公开(公告)号：JPH0470793B2
公开(公告)日：1992-11-11
申请号：JP3276483
申请日：1983-03-02
申请人： HITACHI LTD
发明人： KOBAYASHI MASAMICHI , ICHIKI MASAHIRO
IPC分类号： H01L33/30 , H01L33/62 , H01S5/00 , H01S5/02 , H01S5/022
摘要： PURPOSE:To enable the automation of assembly by mounting a light emitting element on an insulation substrate whereon an Au film is formed and then leading out electrodes from the upper surface of said element and the surface of the Au film by wire bonding. CONSTITUTION:A metallic thin film 11 and the Au thin film 12 are formed on the substrate 10, and unnecessary parts are removed by patterning. Next, a metallic film 13 is formed at the part for mounting a laser diode element 16, and further a solder 15 is formed by a lift-off method. Successively, the substrate 10 is devided into individual pellets, and said element 16 is placed on the solder 15 and then hardened by fusing the solder by heating. Then, the Au wires 17 and 18 are connected by wire bonding. Thus, the soldering of an Au pedestal is unnecessitated, and accordingly automatic assembly becomes simple.

8. 发明专利

JPS60148183A LIGHT-EMITTING ELECTRONIC DEVICE 失效
公开(公告)号：JPS60148183A
公开(公告)日：1985-08-05
申请号：JP342384
申请日：1984-01-13
申请人： HITACHI LTD
发明人： HANEDA MAKOTO , HIRAO MOTONAO , ICHIKI MASAHIRO , SEKO ICHIROU , NAKA HIROSHI
IPC分类号： H01L33/14 , H01L33/16 , H01L33/24 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/227
摘要： PURPOSE:To stabilize the flow of currents by bringing the width of a neck in the main surface of a substrate to 1.0mum and the thickness of an active layer to 0.15mum and keeping the position of the active layer within a predetermined range to the neck in a laser chip having buried hetero-structure. CONSTITUTION:In a wafer 16 consisting of a substrate 1, a buffer layer 2, an active layer 3, a clad layer 4 and a cap layer 5, the thickness of the active layer 3 is brought to 0.15mum and the thickness of other layers to 1-2mum. A mask 17 is formed on the main surface of the wafer 16, and forward mesa structure is shaped in the substrate 1 and the buffer layer 2 and reverse mesa structure 6 in the clad layer 4 and the cap layer 5 by etching the whole by an etching liquid. Necks 7 are formed on boundaries among both structure, the width of the necks is set to 0.9-1.5mum, and the positions of the central height of the active layers 3 are set within a range extending over height intruding to the clad layer 4 side by 0.5mum to the height of the necks 7 and intruding to the buffer layer 2 side by 0.2mum.

9. 发明专利

JPS56112769A MANUFACTURE OF LIGHT EMITTING DIODE 失效
公开(公告)号：JPS56112769A
公开(公告)日：1981-09-05
申请号：JP1553780
申请日：1980-02-13
申请人： HITACHI LTD
发明人： SHIGE NORIYUKI , ICHIKI MASAHIRO , YASUDA YOUICHI
IPC分类号： H01L21/208 , H01L33/14 , H01L33/20 , H01L33/30 , H01L33/62
摘要： PURPOSE:To obtain an infrared ray emitting element having high efficiency, high light output and stable electric characteristics by setting the carrier density of an n type GaAlAs layer making contact with a p type GaAlAs metal compound semiconductor layer as a dopant at 6X10 -1X10 atom.cm . CONSTITUTION:The light emitting diode is formed by forming a p type GaAlAs layer 2 and an n type GaAlAs layer 3 by a liquid phase epitaxial growth on a p type GaAlAs substrate 1 and then forming an n type contact part 4 and a p type contact part 5 thereat. When the layer 3 is formed, the absolute difference value ¦ND-NA¦ between the carrier density and hence the doner density and the acceptor density as a dopant is set in the range from 6X10 to 1X10 atom.cm . The dopant may include impurity elements such as Sn, Te, Se, Si or the like.

10. 发明专利

JPS6030120A MEASUREMENT OF GROWTH THICKNESS OF CRYSTAL 失效
公开(公告)号：JPS6030120A
公开(公告)日：1985-02-15
申请号：JP13754683
申请日：1983-07-29
申请人： HITACHI LTD , HITACHI IRUMA DENSHI KK
发明人： NAKAYAMA YOSHINORI , TSUJI SHINJI , HIRAO MOTONAO , NAKAMURA MICHIHARU , TSUCHIYA MASAAKI , ICHIKI MASAHIRO
IPC分类号： H01L21/66 , H01L21/20
摘要： PURPOSE:To minimize the damage of a crystal and facilitate an accurate measurement of a surface distribution of the growth thickness of the crystal by a method wherein a plurality of stepped regions are provided to evenly distributed position in a wafer for measurement and their areas are minimized. CONSTITUTION:In order to measure the growth thickness of a multi-layer epitaxial crystal for an InGaAsP/InP system semiconductor laser, an etching protection film, to which 12 holes are provided, is formed and, after a P-InGaAsP cap layer 4 is removed by a sulfuric acid system solution, P-InP cladding layer 3 is removed by a hydrochloric acid system solution and an InGaAsP undoped activated layer is exposed to form stepped parts. After the etching protection film is removed, the stepped parts are measured by a needle probe method and a layer thickneess distribution in a wafer surface of the P-InGaAsP cap layer plus the P-InP cladding layer is obtained.

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