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1. 发明专利

JPH06308511A LIQUID CRYSTAL DISPLAY SUBSTRATE 失效
公开(公告)号：JPH06308511A
公开(公告)日：1994-11-04
申请号：JP9826493
申请日：1993-04-26
申请人： HITACHI LTD
发明人： MATSUDA MASAAKI , HIROSHIMA MINORU , YANAI MASAHIRO , KOZAI KIYAO , HORII JUICHI , HASHIMOTO YUICHI
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368
摘要： PURPOSE:To improve display quality by preventing an increase in the resistance of signal bus lines. CONSTITUTION:The surface on the liquid crystal side of one liquid crystal display substrate of the transparent substrates arranged to face each other via a liquid crystal has the signal bus lines 2, scanning bus lines 10, plural pixel electrodes 4 and thin-film semiconductor elements corresponding to the respective pixel electrodes 4. The voltages applied to the signal lines 2 are applied to the pixel electrodes 4 via the thin-film semiconductor elements which are turned on by the signals from the scanning bus lines 10. The signal bus lines 2 and the pixel electrodes 4 constitute a first layer structure formed of ITO films. Semiconductor layers constituting the thin-film semiconductor elements and insulating films laminated on these semiconductor layers constitute a second layer structure formed across at least a part of the signal bus lines 2 and the pixel electrodes 4 and between these lines and electrodes. The scanning bus line 10 constitute a third layer structure formed to cover the insulating films constituting the semiconductor elements. The liquid crystal display substrate having such structure is formed by laminating conductive layers of the resistance lower than the resistance of the ITO films on these ITO films of the signal bus lines 2.

2. 发明专利

JPH06265937A PRODUCTION OF LIQUID CRYSTAL DISPLAY SUBSTRATE 失效
公开(公告)号：JPH06265937A
公开(公告)日：1994-09-22
申请号：JP5526093
申请日：1993-03-16
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： KOZAI KIYAO , MATSUDA MASAAKI , ORITSUKI RYOJI , HIROSHIMA MINORU , YANAI MASAHIRO , HORII JUICHI , HASHIMOTO YUICHI , ISODA TAKASHI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To decrease the man-hours for production by simultaneously forming a first wiring layer and a second wiring layer. CONSTITUTION:An Al layer and a Cr layer are successively formed over the entire area of the main surface of a glass substrate 1. These Cr layer and Al layer are then successively etched. Drain wirings 3 are eventually formed together with gate wirings 2 in the same process and are separated from each other in this stage in the intersected parts. An insulating layer 40A consisting of SiN and an a-Si layer 40B, then a Cr layer 40C are then successively formed over the entire area of the main surface of the glass substrate 1 and the Cr layer 40C, a-Si layer 40B and insulating layer 40A are successively etched. An ITO film is formed over the entire area of the main surface of the glass substrate 1 and is etched. The drain wirings 3 which are held separated thus in the intersected parts with the gate wirings 2 are eventually electrically connected from each other by the ITO formed in the regions where the drain wirings 3 are formed in this stage.

3. 发明专利

JPH06260450A DRY-ETCHING DEVICE 失效
公开(公告)号：JPH06260450A
公开(公告)日：1994-09-16
申请号：JP4382293
申请日：1993-03-04
申请人： HITACHI LTD
发明人： YAMAMOTO HIDEAKI , HORII JUICHI , WAKUI TAKAYUKI , KONISHI NOBUTAKE
IPC分类号： C23F4/00 , G02F1/136 , G02F1/1368 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To cut down the device cost for increasing the throughput by a method wherein an exhaust chamber is connected to exhaust ports provided on the periphries of respective opposite electrodes while gas leading-in ports are provided on respective electrodes for arranging homogenizing sheets between the groups of respective parallel flat plate electrode couples. CONSTITUTION:Upper electrodes UE 11-UE 14 as shower electrodes are arranged to jet an etchant gas Ga toward lower electrodes. Besides, exhaust ports opening to exhaust chamber PC are provided in the space between chamber wall EW and the peripheries of the lower electrodes LE 11-LE 14. Thus, the throughput can be increased while cutting down the device cost without widening the electrode area. Furthermore, partition plates UP1, UP2, UP3 are provided in an etching chamber. Through these procedures, the etchant gas flow and plasma discharge thereof between the groups of respective parallel flat electrode couples can be homogenized.

4. 发明专利

JPH06208121A MANUFACTURE OF THIN FILM DEVICE 失效
公开(公告)号：JPH06208121A
公开(公告)日：1994-07-26
申请号：JP166993
申请日：1993-01-08
申请人： HITACHI LTD
发明人： ORITSUKI RYOJI , MATSUMARU HARUO , HORII JUICHI , HASHIMOTO YUICHI , SAKUTA HIROKI
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To prevent the lowering of resistance of a signal line, and to form components of a part lower than the signal line securely. CONSTITUTION:A first transparent conductive film d1 made of transparent conductive film, a first conductive film g1 made of Cr film and a second conductive film g2 made of Al film are continuously provided by spattering. After the photographing, dry etching is performed to the second conductive film g2 selectively, and dry etching is performed to the first conductive film g1 selectively, and dry etching is performed to the first transparent conductive film d1 selectively to form a scanning signal line GL and a gate electrode GT.

5. 发明专利

JPH0713195A LIQUID CRYSTAL DISPLAY SUBSTRATE 失效
公开(公告)号：JPH0713195A
公开(公告)日：1995-01-17
申请号：JP14624093
申请日：1993-06-17
申请人： HITACHI LTD
发明人： ORITSUKI RYOJI , KOZAI KIYAO , HIROSHIMA MINORU , YANAI MASAHIRO , HORII JUICHI , HASHIMOTO YUICHI , MATSUDA MASAAKI
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/784
摘要： PURPOSE:To provide the constitution to simplify the man-hours for production. CONSTITUTION:This liquid crystal display substrate has pixel electrodes 80 to which voltages are impressed via thin-film semiconductor elements on gate bus lines 12. The extension parts of the pixel electrodes 80 are superposed on the extension parts of the other gate bus lines 12 adjacent to the gate bus lines 12, by which capacitors Cadd are constituted. The substrate has also protective films PAS formed by exposing the effective pixel regions of at least the pixel electrodes 80. The gate bus lines 12 consist of the successive laminates of conductive layers, insulating films and semiconductor layers of the same patterns. The semiconductor layers of the gate bus lines 12 are selectively removed with the protective films PAS as a mask between the respective thin- film semiconductor elements and capacitors Cadd.

6. 发明专利

JPH06235939A LIQUID CRYSTAL DISPLAY DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH06235939A
公开(公告)日：1994-08-23
申请号：JP2394293
申请日：1993-02-12
申请人： HITACHI LTD
发明人： WAKUI TAKAYUKI , ORITSUKI RYOJI , MATSUMARU HARUO , HORII JUICHI , TAKAHATA MASARU , KONISHI NOBUTAKE
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To reduce the number of processes and reduce the cost in a thin film transistor drive type liquid crystal display device. CONSTITUTION:A scanning signal line, a gate electrode 2, and a holding capacity electrode are formed into a laminated film made of a conductor having a transparent conducting material constituting a transparent picture element electrode as the lowest layer. Laminated films made of a conductor having a transparent conducting film 9 as the lowest layer are accumulated and processed in the lump to form a pattern constituted of the transparent picture element electrode, scanning signal line, gate electrode 2, holding capacity electrode, scanning signal line extracting electrode, and image signal line extracting electrode, then the laminated film other than the transparent conducting film 9 on the pattern constituted of the transparent picture element electrode, scanning signal line extracting electrode, and image signal line extracting electrode is removed in the lump in the package machining process. The number of photolithography processes can be reduced, the cost is reduced, and the reliability can be improved. The numerical aperture is increased, and a bright screen can be obtained.

7. 发明专利

JPH0756182A APPARATUS FOR PRODUCING LIQUID CRYSTAL DISPLAY ELEMENT 失效
公开(公告)号：JPH0756182A
公开(公告)日：1995-03-03
申请号：JP20615793
申请日：1993-08-20
申请人： HITACHI LTD
发明人： HASHIMOTO YUICHI , HIROSHIMA MINORU , YANAI MASAHIRO , ORITSUKI RYOJI , HORII JUICHI , MATSUDA MASAAKI , KOZAI KIYAO , ASHIZAWA KEIICHIRO
IPC分类号： C23F4/00 , G02F1/13 , G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/465
摘要： PURPOSE:To provide an apparatus for producing the LCD capable of executing dry etching of a large-sized or multiple-piece production substrate for the LCD and more particularly TFTLCD at high speed. CONSTITUTION:An electric field of sufficiently high intensity is generated between a pair of rectangular electrodes 1, 2 which are slightly longer than the size of the substrate 3 in a direction perpendicular to a substrate transporting direction, but are short in the length in the substrate transporting direction and are relatively narrow in area by using these electrodes 1, 2 and using a power source having the max. possible electric power in terms of a performance- to-cost ratio as a high-frequency power source to be used for plasma generation. Further, electric lines of force are concentrated into the electrodes, i.e., into the substrates by the static electric fields generated by a magnet 5. The shortage of the length of the electrodes in the substrate transporting direction as compared with the length in the transporting direction of one sheet of the substrate is overcome by successively etching the entire surface of the substrates while changing the place to be etched by transporting the substrate with a transporting system 4.

8. 发明专利

JPH06258667A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH06258667A
公开(公告)日：1994-09-16
申请号：JP4489593
申请日：1993-03-05
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： HIROSHIMA MINORU , ORITSUKI RYOJI , YANAI MASAHIRO , KOZAI KIYAO , HORII JUICHI , MATSUDA MASAAKI , ISODA TAKASHI , HASHIMOTO YUICHI
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368
摘要： PURPOSE:To prevent the generation of short circuiting between the electrodes of thin-film transistors(TFTs) by setting the pattern angle of the patterns of these TFTs at a specific value or below. CONSTITUTION:The two TFT1, TFT2 provided at respective pixels are respectively formed with the same size and have a gate electrode GT, a gate insulating film, an i type semiconductor, a pair of source electrode SD1 and drain electrode SD2. The angle theta of the patterns of the TFT1 and TFT2, i.e. the gate electrode GT, the source electrode SD1 and the drain electrode SD2 is so set as to be

9. 发明专利

JPH0888367A MANUFACTURE OF THIN FILM DEVICE 失效
公开(公告)号：JPH0888367A
公开(公告)日：1996-04-02
申请号：JP22450494
申请日：1994-09-20
申请人： HITACHI LTD
发明人： ORITSUKI RYOJI , KOZAI KIYAO , HIROSHIMA MINORU , YANAI MASAHIRO , MATSUDA MASAAKI , HORII JUICHI , HASHIMOTO YUICHI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L21/84 , H01L29/786
摘要： PURPOSE: To avoid the oxidation of a substrate which is caused by the atmosphere by a method wherein, after the substrate is put into film forming and processing facilities from the atmosphere, the substrate is not taken out into the atmosphere. CONSTITUTION: A substrate is transferred by a conveyance line 12 whose atmosphere is substituted by inert gas. An Al film is formed on the substrate by a sputtering apparatus 2 and the substrate is transferred by a conveyance line 13 which is in a depressurized state. After an SiN film, an a Si film and an n-type a-Si film are formed by a glow discharge method in a CVD apparatus 3, the substrate is transferred in inert gas again and resist is applied by a coating apparatus 4. Thus, without being exposed to the atmosphere, the substrate is transferred through an aligner 5, a development apparatus 6 and an etching apparatus 7 and the resist is removed by a resist peeling apparatus 8. Then the side surfaces of the Al wiring are inactivated by an anode formation apparatus 9 to complete a gate line and an a-Si pattern. After a sputtering process in an ITO sputtering apparatus 10, the substrate is transferred to a laser processing apparatus 11 without breaking a vacuum. A drain pattern is drawn by a laser beam with a wavelength suitable for removing ITO to complete a TFT.

10. 发明专利

JPH07135319A THIN FILM TRANSISTOR AND ITS FABRICATION 失效
公开(公告)号：JPH07135319A
公开(公告)日：1995-05-23
申请号：JP18202393
申请日：1993-06-28
申请人： KOKUSAI ELECTRIC CO LTD , HITACHI LTD
发明人： ADAKA SABURO , ORITSUKI RYOJI , HORII JUICHI , MURAMATSU FUMIO , TAKEDA TOMOHIKO , KAMEDA KENJI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786
摘要： PURPOSE:To prevent the characteristics from deteriorating while increasing the film deposition rate by constituting an active layer, i.e., an amorphous silicon layer, of a film deposited at low rate and a film deposited at high rate. CONSTITUTION:A Cr electrode is formed entirely on the surface of a glass substrate 1 and then a gate electrode is formed by wet etching. SiH4 and NH3 are fed into a plasma CVD chamber where silicon nitride 3 is deposited at high rate and then a vacuum state is sustained. Subsequently, the substrate 1 is transferred into another plasma CVD chamber into which SiH4 and H2 are fed in order to deposit first and second layers 9, 4 at low rate. The substrate 1 is further transferred into another plasma CVD chamber into which SiH4 and H2 are fed along with a doping gas of PH3 thus depositing an a-Si(n ) 5. This structure improve the interface characteristics with respect to the gate insulating film and prevents the characteristics from deteriorating while increasing the film deposition rate.

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