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1. 发明专利

JP2001005035A LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JP2001005035A
公开(公告)日：2001-01-12
申请号：JP17210599
申请日：1999-06-18
申请人： HITACHI LTD
发明人： TAKAHATA MASARU , KANEKO TOSHITERU , NOMURA HIDEJI
IPC分类号： G09F9/30 , G02F1/1343 , G02F1/136 , G02F1/1365 , G02F1/1368 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To improve adhesion property between a semiconductor film as a base layer and a metal layer of a drain wiring without increasing the number of production process so much. SOLUTION: After an a-Si semiconductor layer AS is formed on a gate insulating layer GI formed on an insulating substrate SUB1, a high melting point metal layer HTM is formed thereon. The multilayered film of the high melting point metal layer HTM and the semiconductor layer AS is processed in one process by dry etching. Then a molybdenum drain wiring DL is formed thereon.

2. 发明专利

JP2000275679A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2000275679A
公开(公告)日：2000-10-06
申请号：JP8368699
申请日：1999-03-26
申请人： HITACHI LTD
发明人： TAKAHATA MASARU , HARANO YUICHI , OCHIAI TAKAHIRO , KANEKO TOSHITERU
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To simplify a forming process in the case an aluminum film is used for gate electrodes, to reduce cost and to improve a voltage resistance characteristic. SOLUTION: This liquid crystal display device consists of one substrate formed with thin-film transistors(TFTs) having pixel electrodes, the gate electrodes 2 for impressing scanning signals, drain electrodes for impressing video signals and source electrodes connected to the pixel electrodes and another substrate having at least color filters. The gate electrodes 2 of the liquid crystal display device, constituted by sealing a liquid crystal layer between the one substrate and the other substrate, are formed of a laminated structure formed by laminating a high melting metal film 2B on the upper layer of the aluminum- neodymium alloy film 2A.

3. 发明专利

JPH08194230A LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH08194230A
公开(公告)日：1996-07-30
申请号：JP371195
申请日：1995-01-13
申请人： HITACHI LTD
发明人： NISHIMURA ETSUKO , TAKAHATA MASARU , KIYONO TOMOYUKI , KIZAWA KENICHI
IPC分类号： G02F1/1343
摘要： PURPOSE: To eliminate disconnection and short circuiting defects and to improve a yield by improving the adhesion of a stepped part with respect to a transparent conductive film. CONSTITUTION: A nearly randomly oriented polycrystalline indium tin oxide(ITO) film 101 having the ratio of the X-ray diffraction peak intensity of the (400) face to the (222) face in the range of 25 to 75% is used as the transparent conductive film of the liquid crystal display device. Since this film has a film structure densely packed with crystal grains of a uniform size, the interior of the crystal grains and grain boundaries are uniformly etched at the time of patterning the film by a wet etching method, by which a well etched end shape 103 of a forward taper is obtd. Then, the good adhesion of the upper layer film is assured in the case the other film bestrides the difference in level of the transparent conductive film. The penetration of an etchant in the transverse direction of the stepped part is prevented even when the transparent conductive film bestrides the difference in level of the other film and, therefore, the stepwise breakage from the etched ends of the pattern is lessened and the adhesion of the transparent conductive film itself is assured.

4. 发明专利

JPH06250211A LIQUID CRYSTAL DISPLAY SUBSTRATE AND ITS PRODUCTION 失效
公开(公告)号：JPH06250211A
公开(公告)日：1994-09-09
申请号：JP3337093
申请日：1993-02-23
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： ORITSUKI RYOJI , HIROSHIMA MINORU , YANAI MASAHIRO , MATSUDA MASAAKI , HORII JUICHI , HASHIMOTO YUICHI , KOZAI KIYAO , SUZUKI KENKICHI , TAKAHATA MASARU , ISODA TAKASHI
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To drastically reduce man-hours for the production by forming gate electrodes and their wiring layers out of a successive laminate including a gate layer and at least two layers, i.e., a gate insulating film and Si film and producing this laminate by etching using one mask. CONSTITUTION:The gate electrodes and wiring layer 12 connected to the gate electrodes of the liquid crystal display substrate constituted with drains 14 and sources 16A of TFTs by applying the voltage to the gate electrodes of TFTs at the time of applying voltages to pixel electrodes 16 are constituted of the successive laminate including the gate layer and at least two layers, i.e., the gate insulating film and the Si film and is formed by the etching using the one mask. Namely, the laminates structure of an Al layer, SiN layer a-Si layer and contact layer is formed successively from the glass substrate 10 side. This structure is etched by using the one mask to form the gate wirings 12. As a result, the constitution contg. the TFTs simultaneously with the gate wirings 12 is obtd. and the man-hours are decreased.

5. 发明专利

JPH04269791A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH04269791A
公开(公告)日：1992-09-25
申请号：JP5023791
申请日：1991-02-25
申请人： HITACHI LTD
发明人： TAKAHATA MASARU , KITAJIMA MASAAKI
IPC分类号： G02F1/133 , G09G3/36
摘要： PURPOSE:To obtain the liquid crystal display device which has superior display quality and reduced in cost by decreasing the number of signal-side drivers without decreasing the number of picture elements. CONSTITUTION:For example, optional gate voltage terminals among terminals VG1-VG480 as scanning-side lead-out electrodes are selected and one scanning line is selected. While this one scanning line is selected, a select signal is supplied to select signal terminals phi1-phi48 in order and while one select signal terminal phi1 is selected, a display signal for 40 columns is supplied to display signal terminals VD1-VD40 and written in a capacitor CL; and further respective liquid crystal parts LC are driven through driving TFTQs. After this operation is performed 48 times, display data are written in all the liquid crystal parts LC as a one-line display part.

6. 发明专利

JPH04186880A THIN FILM TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04186880A
公开(公告)日：1992-07-03
申请号：JP31416090
申请日：1990-11-21
申请人： HITACHI LTD
发明人： TAKAHATA MASARU , MIKAMI YOSHIAKI , NAGAE KEIJI
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786
摘要： PURPOSE:To achieve high image-quality liquid crystal display by laminating an a-Si film and an n a-Si film which turn into a high resistor vertically inserted between isolated source gates and drain gates and forming a source electrode and a drain electrode on these n Si films. CONSTITUTION:A gate insulation electrode 6, an active layer 5 induced by an a-Si film and an SiN film 8 are consecutively laminated and installed on a gate electrode 1 formed on a glass substrate 9. An a-Si film 7 which is isolated in the section of the SiN film 8 and serves as a high resistor vertically installed between source drains, is installed while an ohmic layer 4 is further installed, which is produced by an n a-Si layer 7. A source electrode 2 and a drain electrode 3 are formed on the ohmic layer 4 by these n a-Si layer.

7. 发明专利

JPH0468311A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH0468311A
公开(公告)日：1992-03-04
申请号：JP18119090
申请日：1990-07-09
申请人： HITACHI LTD
发明人： KUWABARA KAZUHIRO , TAKAHATA MASARU
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1368 , G09G3/36
摘要： PURPOSE:To obtain the liquid crystal display device with good display quality by turning off TFTs for respective picture elements except when image information is supplied to the TFT themselves. CONSTITUTION:Respective scanning lines 16(1) - 16(i) are divided into (n) picture element TFT group selection lines 16(x)-1 - 16(x)-n, TFT.Trxy for picture elements which are connected to the same rows on a display part 65 are divided into (m) groups of (m) TFT.TRs, and the gate electrodes of the Trxy in the same groups are connected in common by TFT group selection lines 16(x)-1 - 16(x)-n. Then when image information is supplied to the Trxy of the respective rows, a picture element TFT group selecting means turns on the TFT group selection lines 16(x)-1 - 16(x)-n in order to supply the image information to the TFTs in the respective groups and the supply of the image information to the respective rows is carried out repeatedly to all the rows. Therefore, each picture element TFT is placed in the OFF state except when the image information is supplied to the TFT, so an amount of charge corresponding to the image information is never discharged through the picture element TFTs and cross resistances. Consequently, the display quality is improved.

8. 发明专利

JPH03257427A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH03257427A
公开(公告)日：1991-11-15
申请号：JP5688090
申请日：1990-03-08
申请人： HITACHI LTD
发明人： TAKAHATA MASARU , OWADA JUNICHI
IPC分类号： G02F1/133 , G09G3/36
摘要： PURPOSE:To prevent the degradation in display quality when a multiple switch matrix system is adopted for a scanning side driving circuit by providing switching means for fixedly supplying any of non-selection potentials or selection potentials to respective scanning electrodes according to the potential of the other source/drain of respective scanning TFTs. CONSTITUTION:A scanning electrode group assignment signal VS turns on and the TFT-Q1 becomes conducting. An on voltage is supplied to the switching means 1 and the contact thereof is switched to an contact side (VDD side) when a scanning electrode selection signal VT turns on as well. The VDD is, therefore, supplied eventually fixedly to capacitors CG, i.e. the gate electrodes of the TFTs for respective picture elements. The off potential is supplied to the switching means 1 and the contact is switched to the (b) contact side when the scanning electrode assignment signal VS is on and the scanning electrode selection signal VT turns off. Zero volts are then fixedly supplied to the capacitors CG. This scanning electrode selection signal VT is the pulse signal to successively output the on voltage alternately by one pulse each while the scanning electrode group assignment signal VS outputs the on voltage by one pulse.

9. 发明专利

JPH02223913A ACTIVE MATRIX LIQUID CRYSTAL DISPLAY 失效
公开(公告)号：JPH02223913A
公开(公告)日：1990-09-06
申请号：JP4300089
申请日：1989-02-27
申请人： HITACHI LTD
发明人： TAKAHATA MASARU
IPC分类号： G02F1/133 , G02F1/136 , G02F1/1368 , G09F9/30 , G09G3/36
摘要： PURPOSE:To accomplish the display of half tone owing to contrivance for the constitution of a circuit by discharging a display signal impressed on the electrode of a liquid crystal terminal only via the off-resistance of a TFT both when a TFT Q1 is an on-state and a TFT Q2 is in an off-state and when the TFT Q1 is in the off-state and the TFT Q2 is the on-state. CONSTITUTION:As to the constitution of the circuit, the optional display signal VDT impressed on optional one dot is impressed on the drain of the TFT Q1 which is constituted in one dot and the source of the Q1 is connected to the drain of the TFT Q2. The source of the Q2 is connected to the electrode of the liquid crystal terminal and transfer gate TFT selection voltage VSC is impressed on the gate of the Q1, then the selection voltage VG of one line of a display part is impressed on the gate of the Q2. Therefore, sufficient effective voltage is impressed between the liquid crystal terminals even if the cross- resistance generated by the superposition of the scanning electrode and the signal electrode in the display part is not so high. Thus, the normal display of an image including the display of the half tone is obtained. A large area and high definition liquid crystal display is easily formed and the cost of the display is made low.

10. 发明专利

JPS62268161A THIN-FILM TRANSISTOR ELEMENT 失效
公开(公告)号：JPS62268161A
公开(公告)日：1987-11-20
申请号：JP11080786
申请日：1986-05-16
申请人： HITACHI LTD
发明人： TAKAHATA MASARU , OWADA JUNICHI , ONO KIKUO , HOSOKAWA YOSHIKAZU , KONISHI NOBUTAKE
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a thin-film transistor element having a large hydrogen plasma treatment effect by forming the removing sections of a semiconductor film at at least one position or more so that transistor elements are connected in parallel with the whole region or one part in a channel section. CONSTITUTION:Transistor structure in which semiconductors having narrow channel width W and long channel length L are connected in parallel is formed. Voltage is applied to an N polysilicon film 8 used as a gate electrode in the state in which potential difference V is applied between the source section, a source electrode 4, of carriers for injecting carriers into a transistor and the discharging section, a drain electrode 5, of carriers in the transistor, and the resistance of a semiconductor film 6 is controlled, and currents flowing between the source electrode 4 and the drain electrode 6 are controlled. A hydrogen plasma treatment effect is displayed sufficiently because of narrow channel width W, and sufficient currents are caused to flow between a source and a drain in the state in which the transistor is turned ON because of the large effective width W of a channel section. Accordingly, the effect of hydrogen plasma treatment can be expected, thus displaying the effects of the reduction of threshold voltage, the increase of field-effect mobility, etc.

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