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    • 10. 发明专利
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • JPH01124251A
    • 1989-05-17
    • JP28237287
    • 1987-11-09
    • HITACHI LTD
    • ISHIBASHI KOICHIROMINATO OSAMUHONJO SHIGERUSASAKI TOSHIOMASUHARA TOSHIAKI
    • H01L29/78H01L21/8234H01L27/02H01L27/06H01L27/088H03F1/42H03F1/52
    • PURPOSE:To enhance electrostatic breakdown strength sufficiently even when a current- limiting resistor connected to an input terminal of a protective element is not contained or when only a resistor with an extremely small value can be connected by a method wherein the current-limiting resistor is used between a first constant-voltage clamping element and a second constant-voltage clamping element. CONSTITUTION:When static electricity is impressed on a terminal 1, an electric current ID at an input node D flows to a grounding terminal 103 mainly through a protective resistor 2, a first constant-voltage clamping element 4 and a parasitic resistor 7. In this case, although a potential at a node E is clamped with reference to a node G, a potential at the node G is increased due to the resistor 7 and an electric current; as a result, it is not possible to suppress the potential to a sufficiently small voltage capable of protecting a gate insulating film. However, when a diode 102 is connected as a second constant-voltage clamping element, it is connected to a power-supply wiring part which is different from the MOS FET 4; as a result, it is possible to clamp a potential at a node F to a sufficiently small potential. In this case, a current- limiting resistor 101 functions so as to limit an electric current flowing through the diode 102 and a resistor 9 and to suppress an increase of the potential at the node F.